arXiv subjects

Guangchong Hu

Publications and source records attributed to Guangchong Hu.

6 recordsLinked to original sources

arXiv2025

Scalable Spin Qubit Architecture with Donor-Cluster Arrays in Silicon

Spin qubits in silicon donors offer a promising platform for quantum computing due to their long coherence times and semiconductor compatibility. However, scaling donor-based spin qubits in silicon is fundamentally challenged by frequency crowding, crosstalk, and the tight tolerances on donor placement in conventional single-donor architectures.To overcome this, we introduce a paradigm based on a two-dimensional array of phosphorus-donor clusters, in which multiple donors share a bound electron. The natural hyperfine distribution within each cluster enables individual addressability of the electron and nuclear spins, while tunable exchange interactions between clusters mediate local all-to-all connectivity. We present a universal control protocol achieving gate fidelities exceeding 99% for both intra-cluster and inter-cluster multi-qubit operations, with crosstalk effectively suppressed. The architecture natively supports efficient quantum error correction, including bias-tailored codes that exploit the intrinsic noise bias of spin qubits. Furthermore, its modular design is compatible with long-range coupling via electron shuttling for large-scale integration. This donor-cluster array architecture establishes a robust and hardware-efficient pathway towards scalable, fault-tolerant quantum computing in silicon.

quant-ph↗

arXiv2025

Demonstration of quantum error detection in a silicon quantum processor

Quantum error detection is essential in realizing large-scale universal quantum computation, especially for quantum error correction (QEC). However, key elements for FTQC have yet to be realized in silicon qubits. Here, we demonstrate quantum error detection on a donor-based silicon quantum processor comprising four-nuclear spin qubits and one electron spin as an auxiliary qubit. The entanglement capability of this system is validated through the establishment of two-qubit Bell state entanglement between the nuclear spins and the generation of a four-qubit Greenberger-Horne-Zeilinger (GHZ) state, achieving a GHZ state fidelity of 88.5(2.3)%. Furthermore, by executing a four-qubit error detection circuit with the stabilizers, we successfully detect arbitrary single-qubit errors. The encoded Bell state entanglement information is recovered by performing the Pauli-frame update (PFU) via postprocessing. Based on the detected errors, we identify strongly biased noise in our system. Our results mark a significant advance toward FTQC in silicon spin qubits.

quant-ph↗

arXiv2023

Noisy intermediate-scale quantum computers

Quantum computers have made extraordinary progress over the past decade, and significant milestones have been achieved along the path of pursuing universal fault-tolerant quantum computers. Quantum advantage, the tipping point heralding the quantum era, has been accomplished along with several waves of breakthroughs. Quantum hardware has become more integrated and architectural compared to its toddler days. The controlling precision of various physical systems is pushed beyond the fault-tolerant threshold. Meanwhile, quantum computation research has established a new norm by embracing industrialization and commercialization. The joint power of governments, private investors, and tech companies has significantly shaped a new vibrant environment that accelerates the development of this field, now at the beginning of the noisy intermediate-scale quantum era. Here, we first discuss the progress achieved in the field of quantum computation by reviewing the most important algorithms and advances in the most promising technical routes, and then summarizing the next-stage challenges. Furthermore, we illustrate our confidence that solid foundations have been built for the fault-tolerant quantum computer and our optimism that the emergence of quantum killer applications essential for human society shall happen in the future.

quant-ph↗

arXiv2022

Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor

Single rare-earth ions in solids show great potential for quantum applications, including single photon emission, quantum computing, and high-precision sensing. However, homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals. The spectral broadening creates a significant challenge for achieving entanglement generation and qubit operation with single rare-earth ions, so it is critical to investigate the broadening mechanisms. We report a spectral broadening study on a single Er$^{3+}$ ion in a Si nano-transistor. The Er-induced photoionisation rate is found to be an appropriate quantity to represent the optical transition probability for spectroscopic studies, and the single ion spectra display a Lorentzian lineshape at all optical powers in use. Spectral broadening is observed at relatively high optical powers and is caused by spectral diffusion on a fast time scale.

quant-ph↗

arXiv2021

Optical and Zeeman spectroscopy of individual Er ion pairs in silicon

We make the first study the optical energy level structure and interactions of pairs of single rare earth ions using a hybrid electro-optical detection method applied to Er-implanted silicon. Two examples of Er3+ pairs were identified in the optical spectrum by their characteristic energy level splitting patterns, and linear Zeeman spectra were used to characterise the sites. One pair is positively identified as two identical Er3+ ions in sites of at least C2 symmetry coupled via a large, 200 GHz Ising-like spin interaction and 1.5 GHz resonant optical interaction. Small non-Ising contributions to the spin interaction are attributed to distortion of the site measurable because of the high resolution of the single-ion measurement. The interactions are compared to previous measurements made using rare earth ensemble systems, and the application of this type of strongly coupled ion array to quantum computing is discussed.

quant-ph↗

arXiv2018

Single rare-earth ions as atomic-scale probes in ultra-scaled transistors

Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local electric field and strain. Here we study the spectral response of single erbium ions to applied electric field and strain in a silicon ultra-scaled transistor. Stark shifts induced by both the overall electric field and the local charge environment are observed. Further, changes in strain smaller than $3\times 10^{-6}$ are detected, which is around two orders of magnitude more sensitive than the standard techniques used in the semiconductor industry. These results open new possibilities for non-destructive 3D mapping of the local strain and electric field in the channel of ultra-scaled transistors, using the single erbium ions as ultra-sensitive atomic probes.

physics.app-ph↗