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arXiv · 2201.11472

Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor

Jiliang Yang·Jian Wang·Wenda Fan·Yangbo Zhang·Changkui Duan·Guangchong Hu·Gabriele G. de Boo·Brett C. Johnson·Jeffrey C. McCallum·Sven Rogge·Chunming Yin·Jiangfeng Du
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Abstract

Single rare-earth ions in solids show great potential for quantum applications, including single photon emission, quantum computing, and high-precision sensing. However, homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals. The spectral broadening creates a significant challenge for achieving entanglement generation and qubit operation with single rare-earth ions, so it is critical to investigate the broadening mechanisms. We report a spectral broadening study on a single Er$^{3+}$ ion in a Si nano-transistor. The Er-induced photoionisation rate is found to be an appropriate quantity to represent the optical transition probability for spectroscopic studies, and the single ion spectra display a Lorentzian lineshape at all optical powers in use. Spectral broadening is observed at relatively high optical powers and is caused by spectral diffusion on a fast time scale.

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Jiliang Yang, Jian Wang, Wenda Fan, Yangbo Zhang, Changkui Duan, Guangchong Hu, Gabriele G. de Boo, Brett C. Johnson, Jeffrey C. McCallum, Sven Rogge, Chunming Yin, Jiangfeng Du. 2022-01-27. Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor. https://doi.org/10.1103/physrevapplied.18.034018

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