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Guangqiang Wang

Publications and source records attributed to Guangqiang Wang.

7 recordsLinked to original sources

GigaBrain-0.7: Scaling Embodied Foundation Models to Emergent Capabilities with a Three-System Architecture

Vision-language-action (VLA) models have become a dominant paradigm for generalist embodied agents, demonstrating strong complex and long-horizon task completion in structured settings. Yet it remains an open question whether current VLA systems can benefit from more effective architectural design, scale to substantially larger and more heterogeneous data regimes, and achieve broader generalization across tasks and embodiments. To this end, we present GigaBrain-0.7, an embodied foundation model with substantially improved generalization across diverse robot embodiments. Specifically, GigaBrain-0.7 unifies understanding, prediction, and action through a three-system architecture, scales pretraining to over 37,000 hours of heterogeneous embodied data, and introduces one-stage alignment training that jointly optimizes vision-language understanding and multi-embodiment action generation. Compared with the preceding GigaBrain-0 series and prior state-of-the-art models including $π_{0.5}$, GigaBrain-0.7 achieves substantial improvements in foundation zero-shot capabilities, language-conditioned instruction following, and post-training task success rates. In particular, on our in-house Maker H01 platform and mainstream robot embodiments, GigaBrain-0.7 demonstrates strong task adaptability and completion ability across both home and industrial scenarios. All training code and pretrained model weights will be released.

cs.RO

Field-induced Metal-Insulator Transition in $β$-EuP$_3$

Metal-insulator transition (MIT) is one of the most conspicuous phenomena in correlated electron systems. However such transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with the charge gap. In this paper we present the observation of a magnetic-field-driven MIT in a magnetic semiconductor $β$-EuP$_3$. Concomitantly, we found a colossal magnetoresistance (CMR) in an extreme way: the resistance drops billionfold at 2 kelvins in a magnetic field less than 3 teslas. We ascribe this striking MIT as a field-driven transition from an antiferromagnetic and paramagnetic insulator to a spin-polarized topological semimetal, in which the spin configuration of $\mathrm{Eu^{2+}}$ cations and spin-orbital coupling (SOC) play a crucial role. As a phosphorene-bearing compound whose electrical properties can be controlled by the application of field, $β$-EuP$_3$ may serve as a tantalizing material in the basic research and even future electronics.

cond-mat.str-el

Enhanced Anomalous Hall Effect in Magnetic Topological Semimetal Co$_3$Sn$_{2-x}$In$_x$S$_2$

We study the anomalous Hall Effect (AHE) of single-crystalline Co$_3$Sn$_{2-x}$In$_x$S$_2$ over a large range of indium concentration x from 0 to 1. Their magnetization reduces progressively with increasing x while their ground state evolves from a ferromagnetic Weyl semimetal into a nonmagnetic insulator. Remarkably, after systematically scaling the AHE, we find that their intrinsic anomalous Hall conductivity (AHC) features an unexpected maximum at around x = 0.15. The change of the intrinsic AHC corresponds with the doping evolution of Berry curvature and the maximum arises from the magnetic topological nodal-ring gap. Our experimental results show a larger AHC in a fundamental nodal-ring gap than that of Weyl nodes.

cond-mat.mtrl-sci

Highly Mobile Carriers in a Candidate of Quasi-Two-Dimensional Topological Semimetal AuTe$_2$Br

We report the crystal and electronic structures of a non-centrosymmetric quasi-two-dimensional (2D), candidate of topological semimetal AuTe2Br. The Fermi surface of this layered compound consists of 2D-like, topological trivial electron and non-trivial hole pockets which host a Dirac cone along the kz direction. Our transport measurements on the single crystals show highly anisotropic, compensated low-density electrons and holes, both of which exhibit ultrahigh mobility at a level of 10^5cm^2V^-1s^-1 at low temperature. The highly mobile, compensated carriers lead a non-saturated, parabolic magnetoresistance as large as 3*10^5 in single-crystalline AuTe2Br in a magnetic field up to 58 T.

cond-mat.mtrl-sci

Crystal growth and quantum oscillations in the topological chiral semimetal CoSi

We survey the electrical transport properties of the single-crystalline, topological chiral semimetal CoSi which was grown via different methods. High-quality CoSi single crystals were found in the growth from tellurium solution. The sample's high carrier mobility enables us to observe, for the first time, quantum oscillations (QOs) in its thermoelectrical signals. Our analysis of QOs reveals two spherical Fermi surfaces around the R point in the Brillouin zone corner. The extracted Berry phases of these electron orbits are consistent with the -2 chiral charge as reported in DFT calculations. Detailed analysis on the QOs reveals that the spin-orbit coupling induced band-splitting is less than 2 meV near the Fermi level, one order of magnitude smaller than our DFT calculation result. We also report the phonon-drag induced large Nernst effect in CoSi at intermediate temperatures.

cond-mat.mtrl-sci

A New Magnetic Topological Quantum Material Candidate by Design

Magnetism, when combined with an unconventional electronic band structure, can give rise to forefront electronic properties such as the quantum anomalous Hall effect, axion electrodynamics, and Majorana fermions. Here we report the characterization of high-quality crystals of EuSn$_2$P$_2$, a new quantum material specifically designed to engender unconventional electronic states plus magnetism. EuSn$_2$P$_2$ has a layered, Bi$_2$Te$_3$-type structure. Ferromagnetic interactions dominate the Curie-Weiss susceptibility, but a transition to antiferromagnetic ordering occurs near 30 K. Neutron diffraction reveals that this is due to two-dimensional ferromagnetic spin alignment within individual Eu layers and antiferromagnetic alignment between layers - this magnetic state surrounds the Sn-P layers at low temperatures. The bulk electrical resistivity is sensitive to the magnetism. Electronic structure calculations reveal that EuSn$_2$P$_2$ might be a strong topological insulator, which can be a new magnetic topological quantum material (MTQM) candidate. The calculations show that surface states should be present, and they are indeed observed by ARPES measurements.

cond-mat.mtrl-sci

Atomic-scale visualization of quasiparticle interference on a type-II Weyl semimetal surface

We combine quasiparticle interference simulation (theory) and atomic resolution scanning tunneling spectro-microscopy (experiment) to visualize the interference patterns on a type-II Weyl semimetal Mo$_{x}$W$_{1-x}$Te$_2$ for the first time. Our simulation based on first-principles band topology theoretically reveals the surface electron scattering behavior. We identify the topological Fermi arc states and reveal the scattering properties of the surface states in Mo$_{0.66}$W$_{0.34}$Te$_2$. In addition, our result reveals an experimental signature of the topology via the interconnectivity of bulk and surface states, which is essential for understanding the unusual nature of this material.

cond-mat.mes-hall