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arXiv · 1909.04296

Highly Mobile Carriers in a Candidate of Quasi-Two-Dimensional Topological Semimetal AuTe$_2$Br

Zeji Wang·Shuyu Cheng·Tay-Rong Chang·Wenlong Ma·Xitong Xu·Huibin Zhou·Guangqiang Wang·Xin Gui·Haipeng Zhu·Zhen Zhu·Hao Zheng·Jinfeng Jia·Junfeng Wang·Weiwei Xie·Shuang Jia
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Abstract

We report the crystal and electronic structures of a non-centrosymmetric quasi-two-dimensional (2D), candidate of topological semimetal AuTe2Br. The Fermi surface of this layered compound consists of 2D-like, topological trivial electron and non-trivial hole pockets which host a Dirac cone along the kz direction. Our transport measurements on the single crystals show highly anisotropic, compensated low-density electrons and holes, both of which exhibit ultrahigh mobility at a level of 10^5cm^2V^-1s^-1 at low temperature. The highly mobile, compensated carriers lead a non-saturated, parabolic magnetoresistance as large as 3*10^5 in single-crystalline AuTe2Br in a magnetic field up to 58 T.

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Zeji Wang, Shuyu Cheng, Tay-Rong Chang, Wenlong Ma, Xitong Xu, Huibin Zhou, Guangqiang Wang, Xin Gui, Haipeng Zhu, Zhen Zhu, Hao Zheng, Jinfeng Jia, Junfeng Wang, Weiwei Xie, Shuang Jia. 2019-09-10. Highly Mobile Carriers in a Candidate of Quasi-Two-Dimensional Topological Semimetal AuTe$_2$Br. https://doi.org/10.1063/1.5121751

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