arXiv subjects

Guodong Yu

Publications and source records attributed to Guodong Yu.

25 records · Page 2Linked to original sources

arXiv2020

Pressure and electric field dependence of quasicrystalline electronic states in 30$^{\circ}$ twisted bilayer graphene

30$^{\circ}$ twisted bilayer graphene demonstrates the quasicrystalline electronic states with 12-fold symmetry. These states are however far away from the Fermi level, which makes conventional Dirac fermion behavior dominating the low energy spectrum in this system. By using tight-binding approximation, we study the effect of external pressure and electric field on the quasicrystalline electronic states. Our results show that by applying the pressure perpendicular to graphene plane one can push the quasicrystalline electronic states towards the Fermi level. Then, the electron or hole doping of the order of $\sim$ $4\times10^{14}$ $cm^{-2}$ is sufficient for the coincidence of the Fermi level with these quasicrystalline states. Moreover, our study indicates that applying the electric field perpendicular to the graphene plane can destroy the 12-fold symmetry of these states and break the energy degeneracy of the 12-wave states, and it is easier to reach this in the conduction band than in the valence band. Importantly, the application of the pressure can recover the 12-fold symmetry of these states to some extent against the electric field. We propose a hybridization picture which can explain all these phenomena.

cond-mat.mtrl-sci↗

arXiv2019

Interplay between in-plane and flexural phonons in electronic transport of two-dimensional semiconductors

Out-of-plane vibrations are considered as the dominant factor limiting the intrinsic carrier mobility of suspended two-dimensional materials at low carrier concentrations. Anharmonic coupling between in-plane and flexural phonon modes is usually excluded from the consideration. Here we present a theory for the electron-phonon scattering, in which the anharmonic coupling between acoustic phonons is systematically taken into account. Our theory is applied to the typical group V two-dimensional semiconductors: hexagonal phosphorus, arsenic, and antimony. We find that the role of the flexural modes is essentially suppressed by their coupling with in-plane modes. At dopings lower than 10$^{12}$ cm$^{-2}$ the mobility reduction does not exceed 30\%, being almost independent of the concentration. Our findings suggest that compared to in-plane phonons, flexural phonons are considerably less important in the electronic transport of two-dimensional semiconductors, even at low carrier concentrations.

cond-mat.mtrl-sci↗

arXiv2019

Dodecagonal bilayer graphene quasicrystal and its approximants

Dodecagonal bilayer graphene quasicrystal has 12-fold rotational order but lacks translational symmetry which prevents the application of band theory. In this paper, we study the electronic and optical properties of graphene quasicrystal with large-scale tight-binding calculations involving more than ten million atoms. We propose a series of periodic approximants which reproduce accurately the properties of quasicrystal within a finite unit cell. By utilizing the band-unfolding method on the smallest approximant with only 2702 atoms, the effective band structure of graphene quasicrystal is derived. Novel features, such as the emergence of new Dirac points (especially the mirrored ones), the band gap at M point and the Fermi velocity are all in agreement with recent experiments. The properties of quasicrystal states are identified in the Landau level spectrum and optical excitations. Importantly, our results show that the lattice mismatch is the dominant factor determining the accuracy of layered approximants. The proposed approximants can be used directly for other layered materials in honeycomb lattice, and the design principles can be applied for any quasi-periodic incommensurate structures.

cond-mat.mes-hall↗

arXiv2018

Computationally-driven, high throughput identification of CaTe and Li$_\textrm{3}$Sb as promising candidates for high mobility $p$-type transparent conducting materials

High-performance $p$-type transparent conducting materials (TCMs) must exhibit a rare combination of properties including high mobility, transparency and $p$-type dopability. The development of high-mobility/conductivity $p$-type TCMs is necessary for many applications such as solar cells, or transparent electronic devices. Oxides have been traditionally considered as the most promising chemical space to dig out novel $p$-type TCMs. However, non-oxides might perform better than traditional $p$-type TCMs (oxides) in terms of mobility. We report on a high-throughput (HT) computational search for non-oxide $p$-type TCMs from a large dataset of more than 30,000 compounds which identified CaTe and Li$_\textrm{3}$Sb as very good candidates for high-mobility $p$-type TCMs. From our calculations, both compounds are expected to be $p$-type dopable: intrinsically for Li$_\textrm{3}$Sb while CaTe would require extrinsic doping. Using electron-phonon computations, we estimate hole mobilities at room-temperature to be about 20 and 70 cm$^2$/Vs for CaTe and Li$_\textrm{3}$Sb, respectively. The computed hole mobility for Li$_\textrm{3}$Sb is quite exceptional and comparable with the electron mobility in the best $n$-type TCMs.

cond-mat.mtrl-sci↗

arXiv2018

Tunable Half-Metallicity and Edge Magnetism of H-saturated InSe Nanoribbons

We report on a theoretical study of electronic and magnetic properties of hydrogen-saturated InSe nanoribbons (H-ZISNs). Based on hybrid-functional first-principles calculations, we find that H-ZISNs exhibit tunable half-metallicity and short-range ferromagnetic order. We first show that p-type doping turns narrow H-ZISNs from semimetal to half-metal with spin-polarization along In-terminated edge. This behavior is further analyzed in terms of a two-band tight-binding model, which provides a tractable description of the H-ZISN electronic structure, and serves as a starting point for the determination of magnetic interactions. The dominant exchange interaction determined within the Heisenberg model is found to be ferromagnetic independently of the ribbon width and charge doping. Short-range stability of magnetic order is assessed in terms of the zero-field spin correlation length, which is found to be about 1 nm at liquid nitrogen temperatures. Finally, by calculating spin-dependent transport properties, we find a doping regime in which strongly spin-selective electrical conductivities can be observed. Our findings suggest that H-ZISNs are appealing candidates for the realization of spintronic effects at the nanoscale.

physics.comp-ph↗

arXiv2018

Electronic and mechanical properties of few-layer borophene

We report first principle calculations of electronic and mechanical properties of few-layer borophene with the inclusion of interlayer van der Waals (vdW) interaction. The anisotropic metallic behaviors are preserved from monolayer to few-layer structures. The energy splitting of bilayer borophene at $Γ$ point near the Fermi level is about 1.7 eV, much larger than the values (0.5--1 eV) of other layered semiconductors, indicating much stronger vdW interactions in metallic layered borophene. In particular, the critical strains are enhanced by increasing the number of layers, leading to much more flexibility than that of monolayer structure. On the one hand, because of the buckled atomic structures, the out-of-plane negative Poisson's ratios are preserved as the layer-number increases. On the other hand, we find that the in-plane negative Poisson's ratios disappear in layered borophene, which is very different from puckered black phosphorus. The negative Poisson's ratio will recover if we enlarge the interlayer distance to 6.3 $\mboxÅ$, indicating that the physical origin behind the change of Poisson's ratios is the strong interlayer vdW interactions in layered borophene.

cond-mat.mtrl-sci↗

arXiv2013

Observation of Kondo Effect in a Quadruple Quantum Dots

We investigate the Kondo effect in a quadruple quantum dot device of coupled-double quantum dots (DQDs), which simultaneously contains intra-DQDs and inter-DQDs coupling. A variety of novel behaviors are observed. The differential conductance dI/dV is measured in the upper DQDs as a function of source drain bias. It is found to exhibit multiple peaks, including a zero-bias peak, where the number of peaks exceeds five. Alternatively, tuning the lower DQDs yielded regions of four peaks. In addition, a Kondo-effect switcher is demonstrated, using the lower DQDs as the controller.

cond-mat.mes-hall↗