arXiv subjects

Guolin Zheng

Publications and source records attributed to Guolin Zheng.

At least 19 recordsLinked to original sources

arXiv2025

Air-stable lithiation engineering of $\mathrm{MoS}_{2}$ for direct-bandgap multilayers

Due to its sizable direct bandgap and strong light-matter interactions, the preparation of monolayer $\mathrm{MoS}_{2}$ has attracted significant attention and intensive research efforts. However, multilayer $\mathrm{MoS}_{2}$ is largely overlooked because of its optically inactive indirect bandgap caused by interlayer coupling. It is highly desirable to modulate and decrease the interlayer coupling so that each layer in multilayer $\mathrm{MoS}_{2}$ can exhibit a monolayer-like direct-gap behavior. Here, we demonstrate the nanoprobe fabrication of $\mathrm{Li}_{x}\mathrm{MoS}_{2}$-based multilayers exhibiting a direct bandgap and strong photoluminescence emission from tightly bound excitons and trions. The fabrication is facilitated by our newly developed Li-ion platform, featuring tip-induced Li intercalation, air stability and rewritability. Raman characterizations reveal that controlled Li intercalation effectively transforms multilayer $\mathrm{MoS}_{2}$ into the stack of multiple monolayers, leading to a 26-fold enhancement of photoluminescence, compared to a monolayer. This intercalation result is different from existing observations of transforming $\mathrm{MoS}_{2}$ multilayers into metallic phases.

cond-mat.mes-hall↗

arXiv2025

High-Pressure Tuning of Electrical Transport in Freestanding Oxide Films

Electrical transport in oxide thin films under high pressure remains largely unexplored due to the lack of a universal experimental strategy. Here we develop an approach that enables high-pressure transport measurements in freestanding oxide films by enhancing their mechanical robustness and integrating them with nanoscale high-pressure devices. As a demonstration, we investigate the resistivity of perovskite SrIrO3 films under hydrostatic pressure and uncover a pressure-driven semimetal-insulator transition near 2.5 GPa, followed by an insulator-metal transition around 9 GPa. In the monolayer limit, SrIrO3 remains insulating and robust against pressure up to 5.5 GPa. The contrasting pressure-dependent phase diagrams of three- and two-dimensional iridates reveal a strong interplay between dimensionality and hydrostatic pressure in correlated oxides. Our work establishes a general platform for exploring pressure-driven phenomena in low-dimensional quantum materials.

cond-mat.mtrl-sci↗

arXiv2024

FePd2Te2: An Anisotropic Two-Dimensional Ferromagnet with One-Dimensional Fe Chains

Two-dimensional (2D) magnets have attracted significant attentions in recent years due to their importance in the research on both fundamental physics and spintronic applications. Here, we report the discovery of a new ternary compound FePd2Te2. It features a layered quasi-2D crystal structure with one-dimensional Fe zigzag chains extending along the b-axis in the cleavage plane. Single crystals of FePd2Te2 with centimeter-size could be grown. Density functional theory calculations, mechanical exfoliation and atomic force microscopy on these crystals reveal that they are 2D materialsthat can be thinned down to 5 nm. Magnetic characterization shows that FePd2Te2 is an easy-plane ferromagnet with Tc 183 K and strong in-plane uniaxial magnetic anisotropy. Magnetoresistance and anomalous Hall effect demonstrate that ferromagnetism could maintain in FePd2Te2 flakes with large coercivity. A crystal twinning effect is observed by scanning tunneling microscopy which makes the Fe chains right-angle bent in the cleavage plane and creates an intriguing spin texture. Our results show that FePd2Te2 is a correlated anisotropic 2D magnets that may attract multidisciplinary research interests.

cond-mat.mtrl-sci↗

arXiv2024

Room temperature magnetic phase transition in an electrically-tuned van der Waals ferromagnet

Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room-temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr1.2Te2 observed at room temperature (290 K). This magnetism was tuned via a protonic gate with an electron doping concentration up to 3.8 * 10^21 cm^-3. We observed non-monotonic evolutions in both coercivity and anomalous Hall resistivity. Under increased electron doping, the coercivities and anomalous Hall effects (AHEs) vanished, indicating a doping-induced magnetic phase transition. This occurred up to room temperature. DFT calculations showed the formation of an antiferromagnetic (AFM) phase caused by the intercalation of protons which induced significant electron doping in the Cr1.2Te2. The tunability of the magnetic properties and phase in room temperature magnetic vdW Cr1.2Te2 is a significant step towards practical spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Surface skyrmions and dual topological Hall effect in antiferromagnetic topological insulator EuCd$_2$As$_2$

In this work, we synthesized single crystal of EuCd$_2$As$_2$, which exhibits A-type antiferromagnetic (AFM) order with in-plane spin orientation below $T_N$ = 9.5~K.Optical spectroscopy and transport measurements suggest its topological insulator (TI) nature with an insulating gap around 0.1eV. Remarkably, a dual topological Hall resistivity that exhibits same magnitude but opposite signs in the positive to negative and negative to positive magnetic field hysteresis branches emerges below 20~K. With magnetic force microscopy (MFM) images and numerical simulations, we attribute the dual topological Hall effect to the Néel-type skyrmions stabilized by the interactions between topological surface states and magnetism, and the sign reversal in different hysteresis branches indicates potential coexistence of skyrmions and antiskyrmions. Our work uncovers a unique two-dimensional (2D) magnetism on the surface of intrinsic AFM TI, providing a promising platform for novel topological quantum states and AFM spintronic applications.

cond-mat.supr-con↗

arXiv2023

Imaging current control of magnetization in Fe$_3$GeTe$_2$ with a widefield nitrogen-vacancy microscope

Van der Waals (vdW) magnets are appealing candidates for realising spintronic devices that exploit current control of magnetization (e.g. switching or domain wall motion), but so far experimental demonstrations have been sparse, in part because of challenges associated with imaging the magnetization in these systems. Widefield nitrogen-vacancy (NV) microscopy allows rapid, quantitative magnetic imaging across entire vdW flakes, ideal for capturing changes in the micromagnetic structure due to an electric current. Here we use a widefield NV microscope to study the effect of current injection in thin flakes ($\sim10$nm) of the vdW ferromagnet Fe$_3$GeTe$_2$ (FGT). We first observe current-reduced coercivity on an individual domain level, where current injection in FGT causes substantial reduction in the magnetic field required to locally reverse the magnetisation. We then explore the possibility of current-induced domain-wall motion, and provide preliminary evidence for such a motion under relatively low current densities, suggesting the existence of strong current-induced torques in our devices. Our results illustrate the applicability of widefield NV microscopy to imaging spintronic phenomena in vdW magnets, highlight the possibility of efficient magnetization control by direct current injection without assistance from an adjacent conductor, and motivate further investigations of the effect of currents in FGT and other vdW magnets.

cond-mat.mes-hall↗

arXiv2022

Gate-tunable exchange bias effect in FePS3-Fe5GeTe2 van der Waals heterostructures

Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic coupling. However, to date, the electrical gate-controlled EB effect has yet to be realized in vdW heterostructures. Here, for the first time, we realized electrically-controllable EB effects in a vdW antiferromagnetic (AFM)-ferromagnetic (FM) heterostructure, FePS3-Fe5GeTe2. For pristine FePS3-Fe5GeTe2 heterostructures, sizable EB effects can be generated due to the strong interface coupling, which also depend on the thickness of the ferromagnetic layers. By applying a solid protonic gate, the EB effects can be electrically tuned largely by proton intercalations and deintercalations. The EB field reaches up to 23% of the coercive field and the blocking temperature exceeds 50 K at Vg= -3.15 V. The proton intercalations not only tune the average magnetic exchange coupling, but also change the AFM configurations and transform the heterointerface between an uncompensated AFM-FM interface and a compensated AFM-FM interface. These alterations result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step towards vdW heterostructure-based magnetic logic for future low-energy electronics.

cond-mat.mtrl-sci↗

arXiv2022

Electrically controlled superconductor-insulator transition and giant anomalous Hall effect in kagome metal CsV3Sb5 nanoflakes

The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV3Sb5 (A= K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we show that a protonic gate can largely modulate the effective disorders and carrier density in CsV3Sb5 nanoflakes, leading to significant modifications of SC, unusual charge density wave (CDW) and giant AHE. Notably, we observed a direct superconductor-insulator transition (SIT) driven by superconducting phase fluctuation due to the doping-enhanced disorders, in addition to a large suppression of CDW. Meanwhile, the carrier density modulation shifts the Fermi level across the CDW gap and gives rise to a nontrivial evolution of AHE, in line with the asymmetric density of states of CDW sub-bands near the saddle point. With the first-principles calculations, we suggest the extrinsic skew scattering of holes in the nearly flat bands with finite Berry curvature by multiple impurities accounts for the giant AHE. Our work uncovers a disorder-driven bosonic SIT, outlines a global picture of the giant AHE and reveals its correlation with the unconventional CDW in the AV3Sb5 family.

cond-mat.mtrl-sci↗

arXiv2021

Wav-BERT: Cooperative Acoustic and Linguistic Representation Learning for Low-Resource Speech Recognition

Unifying acoustic and linguistic representation learning has become increasingly crucial to transfer the knowledge learned on the abundance of high-resource language data for low-resource speech recognition. Existing approaches simply cascade pre-trained acoustic and language models to learn the transfer from speech to text. However, how to solve the representation discrepancy of speech and text is unexplored, which hinders the utilization of acoustic and linguistic information. Moreover, previous works simply replace the embedding layer of the pre-trained language model with the acoustic features, which may cause the catastrophic forgetting problem. In this work, we introduce Wav-BERT, a cooperative acoustic and linguistic representation learning method to fuse and utilize the contextual information of speech and text. Specifically, we unify a pre-trained acoustic model (wav2vec 2.0) and a language model (BERT) into an end-to-end trainable framework. A Representation Aggregation Module is designed to aggregate acoustic and linguistic representation, and an Embedding Attention Module is introduced to incorporate acoustic information into BERT, which can effectively facilitate the cooperation of two pre-trained models and thus boost the representation learning. Extensive experiments show that our Wav-BERT significantly outperforms the existing approaches and achieves state-of-the-art performance on low-resource speech recognition.

cs.CL↗

arXiv2021

Tailoring Dzyaloshinskii-Moriya interaction in a transition metal dichalcogenide by dual-intercalation

Dzyaloshinskii-Moriya interaction (DMI) is vital to form various chiral spin textures, novel behaviors of magnons and permits their potential applications in energy-efficient spintronic devices. Here, we realize a sizable bulk DMI in a transition metal dichalcogenide (TMD) 2H-TaS2 by intercalating Fe atoms, which form the chiral supercells with broken spatial inversion symmetry and also act as the source of magnetic orderings. Using a newly developed protonic gate technology, gate-controlled protons intercalation could further change the carrier density and intensely tune DMI via the Ruderman-Kittel-Kasuya-Yosida mechanism. The resultant giant topological Hall resistivity of 1.4 uohm.cm at -5.2V (about 460% of the zero-bias value) is larger than most of the known magnetic materials. Theoretical analysis indicates that such a large topological Hall effect originates from the two-dimensional Bloch-type chiral spin textures stabilized by DMI, while the large anomalous Hall effect comes from the gapped Dirac nodal lines by spin-orbit interaction. Dual-intercalation in 2HTaS2 provides a model system to reveal the nature of DMI in the large family of TMDs and a promising way of gate tuning of DMI, which further enables an electrical control of the chiral spin textures and related electromagnetic phenomena.

cond-mat.mes-hall↗

arXiv2021

Adversarial Meta Sampling for Multilingual Low-Resource Speech Recognition

Low-resource automatic speech recognition (ASR) is challenging, as the low-resource target language data cannot well train an ASR model. To solve this issue, meta-learning formulates ASR for each source language into many small ASR tasks and meta-learns a model initialization on all tasks from different source languages to access fast adaptation on unseen target languages. However, for different source languages, the quantity and difficulty vary greatly because of their different data scales and diverse phonological systems, which leads to task-quantity and task-difficulty imbalance issues and thus a failure of multilingual meta-learning ASR (MML-ASR). In this work, we solve this problem by developing a novel adversarial meta sampling (AMS) approach to improve MML-ASR. When sampling tasks in MML-ASR, AMS adaptively determines the task sampling probability for each source language. Specifically, for each source language, if the query loss is large, it means that its tasks are not well sampled to train ASR model in terms of its quantity and difficulty and thus should be sampled more frequently for extra learning. Inspired by this fact, we feed the historical task query loss of all source language domain into a network to learn a task sampling policy for adversarially increasing the current query loss of MML-ASR. Thus, the learnt task sampling policy can master the learning situation of each language and thus predicts good task sampling probability for each language for more effective learning. Finally, experiment results on two multilingual datasets show significant performance improvement when applying our AMS on MML-ASR, and also demonstrate the applicability of AMS to other low-resource speech tasks and transfer learning ASR approaches.

cs.CL↗

arXiv2020

Gate-controlled magnetic phase transition in a van der Waals magnet Fe$_5$GeTe$_2$

Magnetic van der Waals (vdW) materials, including ferromagnets (FM) and antiferromagnets (AFM), have given access to the investigation of magnetism in two-dimensional (2D) limit and attracted broad interests recently. However, most of them are semiconducting or insulating and the vdW itinerant magnets, especially vdW itinerant AFM, are very rare. Here, we studied the anomalous Hall effect of a vdW itinerant magnet Fe$_5$GeTe$_2$ (F5GT) with various thicknesses down to 6.8 nm (two unit cells). Despite the robust ferromagnetic ground state in thin-layer F5GT, however, we show that the electron doping implemented by a protonic gate can eventually induce a magnetic phase transition from FM to AFM. Realization of an antiferromagnetic phase in F5GT highlights its promising applications in high-temperature antiferromagnetic vdW devices and heterostructures.

cond-mat.mtrl-sci↗

arXiv2020

Determination of the spin orientation of helical electrons in monolayer WTe2

Monolayer WTe2 is predicted to be a quantum spin Hall insulator (QSHI) and electron transport along its edges has been experimentally observed. However, the 'smoking gun' of QSHI, spin momentum locking of the edge electrons, has not been experimentally demonstrated. We propose a model to establish the relationship between the anisotropic magnetoresistance (AMR) and spin orientation of the helical electrons in WTe2. Based on the predictions of the model, angular dependent magnetoresistance measurements were carried out. The experimental results fully supported the model and the spin orientation of the helical edge electrons was determined. Our results not only demonstrate that WTe2 is indeed a QSHI, but also suggest a convenient method to determine the spin orientation of other QSHIs.

cond-mat.mes-hall↗

arXiv2020

Gate-Tuned Interlayer Coupling in van der Waals Ferromagnet Fe$_3$GeTe$_2$ Nanoflakes

The weak interlayer coupling in van der Waals (vdW) magnets has confined their application to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer coupling in a vdW magnet Fe$_3$GeTe$_2$ (FGT) can be largely modulated by a protonic gate.With the increase of the protons intercalated among vdW layers,interlayer magnetic coupling increases.Because of the existence of antiferromagnetic layers in FGT nanoflakes, the increasing interlayer magnetic coupling induces exchange bias in protonated FGT nanoflakes. Most strikingly, a rarely seen zero-field cooled (ZFC) exchange bias with very large values (maximally up to 1.2 kOe) has been observed when higher positive voltages (Vg>4.36 V) are applied to the protonic gate, which clearly demonstrates that a strong interlayer coupling is realized by proton intercalation. Such strong interlayer coupling will enable a wider range of applications for vdW magnets.

cond-mat.mtrl-sci↗

arXiv2020

Imaging domain reversal in an ultrathin van der Waals ferromagnet

The recent isolation of two-dimensional van der Waals magnetic materials has uncovered rich physics that often differs from the magnetic behaviour of their bulk counterparts. However, the microscopic details of fundamental processes such as the initial magnetization or domain reversal, which govern the magnetic hysteresis, remain largely unknown in the ultrathin limit. Here we employ a widefield nitrogen-vacancy (NV) microscope to directly image these processes in few-layer flakes of magnetic semiconductor vanadium triiodide (VI$_3$). We observe complete and abrupt switching of most flakes at fields $H_c\approx0.5-1$ T (at 5 K) independent of thickness down to two atomic layers, with no intermediate partially-reversed state. The coercive field decreases as the temperature approaches the Curie temperature ($T_c\approx50$ K), however, the switching remains abrupt. We then image the initial magnetization process, which reveals thickness-dependent domain wall depinning fields well below $H_c$. These results point to ultrathin VI$_3$ being a nucleation-type hard ferromagnet, where the coercive field is set by the anisotropy-limited domain wall nucleation field. This work illustrates the power of widefield NV microscopy to investigate magnetization processes in van der Waals ferromagnets, which could be used to elucidate the origin of the hard ferromagnetic properties of other materials and explore field- and current-driven domain wall dynamics.

cond-mat.mes-hall↗

arXiv2019

Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures

Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological insulators, vdW heterostructures can be assembled (with no requirement for lattice matching) to provide otherwise unattainable device structures and functionalities. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in van der Waals heterostructured Fe3GeTe2/graphite/Fe3GeTe2 devices. Unlike conventional giant magnetoresistance (GMR) which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high, intermediate and low resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three resistance behavior was attributed to a spin momentum locking induced spin polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures.

cond-mat.mes-hall↗

arXiv2018

Thermal tuning of the carrier density in Dirac semimetal Cd3As2 nanoplates

The tunable carrier density plays a key role in the investigation of novel transport properties in three-dimensional topological semimetals. Here we demonstrate that the carrier density as well as the mobility of Dirac semimetal Cd3As2 nanoplates can be effectively tuned by the in-situ thermal treatment at 350 K for one hour, both showing a non-monotonic evolution with the thermal cycling treatments. The upward shift of Fermi level relative to the Dirac nodes blurs the surface Fermi-arc states, accompanying with an anomalous phase shift of oscillations of bulk states due to the change of topology of electrons. Meanwhile, the peaks of oscillations of bulk longitudinal magnetoresistivity shift at high fields due to their coupling to the oscillations of the surface Fermi-arc states. Our work provides a thermal control knob for manipulations of the quantum states through the carrier density in Dirac semimetal Cd3As2 at high temperature.

cond-mat.mes-hall↗

arXiv2018

de Haas-van Alphen study on three-dimensional topological semimetal pyrite PtBi2

We present the systematic de Haas-van Alphen (dHvA) quantum oscillations studies on the recently discovered topological Dirac semimetal pyrite PtBi2 single crystals. Remarkable dHvA oscillations were observed at field as low as 1.5 T. From the analyses of dHvA oscillations, we have extracted high quantum mobility, light effective mass and phase shift factor for Dirac fermions in pyrite PtBi2. From the angular dependence of dHvA oscillations, we have mapped out the topology of the Fermi surface and identified additional oscillation frequencies which were not probed by SdH oscillations.

cond-mat.mtrl-sci↗