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Guoping Guo

Publications and source records attributed to Guoping Guo.

At least 37 records · Page 2Linked to original sources

Generic detection-based error-mitigation using quantum autoencoders

Efficient error-mitigation techniques demanding minimal resources is key to quantum information processing. We propose a generic protocol to mitigate quantum errors using detection-based quantum autoencoders. In our protocol, the quantum data are compressed into a latent subspace while leaving errors outside, the latter of which is then removed by a measurement and post-selection. Compared to previously developed methods, our protocol on the one hand requires no extra qubits, and on the other hand has a near-optimal denoising power, in which under reasonable requirements all errors detected outside of the latent subspace can be removed, while those inside the subspace cannot be removed by any means. Our detection-based quantum autoencoders are therefore particularly useful for near-term quantum devices in which controllable qubits are limited while noise reduction is important.

quant-ph↗

Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models

Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evolutionary strategy (MES) and dual-model modeling (BSIM3v3 and EKV2.6). Both methods are based on the principle of kink effect. The first method considers impact ionization and substrate current induced body effect (SCBE), and the other considers the change of the freeze-out substrate potential. By applying the above two methods, kink can be corrected to improve the agreement between simulation data and measurement data, and obtain more accurate model parameters. These two methods can be used in further work for cryogenic device modeling and circuit design.

physics.app-ph↗

Characterization and Modeling of Native MOSFETs Down to 4.2 K

The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on the standard threshold voltage (SVT) and low threshold voltage (LVT) MOSFETs. In this paper, we characterize native MOSFETs within the temperature range from 300K to 4.2K. The cryogenic Vth increases up to ~0.25V (W/L=10um/10um) and the improved subthreshold swing (SS)~14.30mV/dec@4.2K. The off-state current (Ioff) and the gate-induced drain leakage (GIDL) effect are ameliorated greatly. The step-up effect caused by the substrate charge and the transconductance peak effect caused by the energy quantization in different sub-bands are also discussed. Based on the EKV model, we modified the mobility calculation equations and proposed a compact model of large size native MOSFETs suitable for the range of 300K to 4.2K. The mobility-related parameters are extracted via a machine learning approach and the temperature dependences of the scattering mechanisms are analyzed. This work is beneficial to both the research on cryogenic MOSFETs modeling and the design of cryogenic CMOS circuits for quantum chips.

physics.app-ph↗

A quantum circuit simulator and its applications on Sunway TaihuLight supercomputer

Classical simulation of quantum computation is vital for verifying quantum devices and assessing quantum algorithms. We present a new quantum circuit simulator developed on the Sunway TaihuLight supercomputer. Compared with other simulators, the present one is distinguished in two aspects. First, our simulator is more versatile. The simulator consists of three mutually independent parts to compute the full, partial and single amplitudes of a quantum state with different methods. It has the function of emulating the effect of noise and support more kinds of quantum operations. Second, our simulator is of high efficiency. The simulator is designed in a two-level parallel structure to be implemented efficiently on the distributed many-core Sunway TaihuLight supercomputer. Random quantum circuits can be simulated with 40, 75 and 200 qubits on the full, partial and single amplitude, respectively. As illustrative applications of the simulator, we present a quantum fast Poisson solver and an algorithm for quantum arithmetic of evaluating transcendental functions. Our simulator is expected to have broader applications in developing quantum algorithms in various fields.

quant-ph↗

A simultaneous feedback and feed-forward control and its application to realize a random walk on the Bloch sphere in a superconducting Xmon-qubit system

Measurement-based feedback control is central in quantum computing and precise quantum control. Here we realize a fast and flexible field-programmable-gate-array-based feedback control in a superconducting Xmon qubit system. The latency of room-temperature electronics is custom optimized to be as short as 140 ns. Projective measurement of a signal qubit produces a feedback tag to actuate a conditional pulse gate to the qubit. In a feed-forward process, the measurement-based feedback tag is brought to a different target qubit for a conditional control. In a two-qubit experiment, the feedback and feed-forward controls are simultaneously actuated in consecutive steps. A quantum number is then generated by the signal qubit, and a random walk of the target qubit is correspondingly triggered and realized on the Bloch sphere. Our experiment provides a conceptually simple and intuitive benchmark for the feedback control in a multi-qubit system. The feedback system can be further scaled up for more complex feedback control experiments.

quant-ph↗

Experimental realization of nonadiabatic geometric gates with a superconducting Xmon qubit

Geometric phases are only dependent on evolution paths but independent of evolution details so that they own some intrinsic noise-resilience features. Based on different geometric phases, various quantum gates have been proposed, such as nonadiabatic geometric gates based on nonadiabatic Abelian geometric phases and nonadiabatic holonomic gates based on nonadiabatic non-Abelian geometric phases. Up to now, nonadiabatic holonomic one-qubit gates have been experimentally demonstrated with the supercondunting transmon, where three lowest levels with cascaded configuration are all applied in the operation. However, the second excited states of transmons have relatively short coherence time, which results in a lessened fidelity of quantum gates. Here, we experimentally realize Abelian-geometric-phase-based nonadiabatic geometric one-qubit gates with a superconducting Xmon qubit. The realization is performed on two lowest levels of an Xmon qubit and thus avoids the influence from the short coherence time of the second excited state. The experimental result indicates that the average fidelities of single-qubit gates can be up to 99.6% and 99.7% characterized by quantum process tomography and randomized benchmarking, respectively.

quant-ph↗

Characterization of 0.18μm CMOS Ring Oscillator at Liquid Helium Temperature

This paper presents low power dissipation, low phase noise ring oscillators (ROs) based on Semiconductor Manufacturing International Corporation (SMIC) 0.18μm CMOS technology at liquid helium temperature (LHT). First, the characterization and modelling of CMOS at LHT are presented. The temperature-dependent device parameters are revised and the model then shows good agreement with the measurement results. The ring oscillator is then designed with energy efficiency optimization by application of forward body biasing (FBB). FBB is proposed to compensate for the threshold voltage (VTH) shift to preserve the benefits of the enhancement of the carrier mobility at 4.2K. The delay per stage (τp), the static current (ISTAT), the dynamic current (IDYN), the power dissipation (P) and the phase noise (L(foff)) are analyzed at both 298 K and 4.2 K, with and without FBB. The performance of the designed RO in terms of speed (τp=179ps), static current (23.55nA/stage), power dissipation (2.13μW) and phase noise (-177.57dBc/Hz@1MHz) can be achieved at 4.2K with the supply voltage (VDD) reduced to 0.9V.

physics.app-ph↗

Cryogenic low power CMOS analog buffer at 4.2K

A novel power-efficient analog buffer at liquid helium temperature is proposed. The proposed circuit is based on an input stage consisting of two complementary differential pairs to achieve rail-to-rail level tracking. Results of simulation based on SMIC 0.18um CMOS technology show the high driving capability and low quiescent power consumption at cryogenic temperature. Operating at single 1.4 V supply, the circuit could achieve a slew-rate of +51 V/us and -93 V/us for 10 pF capacitive load. The static power of the circuit is only 79uW.

physics.app-ph↗

Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets

We implement the molecular beam epitaxy method to embed the black-phosphorus-like bismuth nanosheets into the bulk ferromagnet Cr$_2$Te$_3$. As a typical surfactant, bismuth lowers the surface tensions and mediates the layer-by-layer growth of Cr$_2$Te$_3$. Meanwhile, the bismuth atoms precipitate into black-phosphorus-like nanosheets with the lateral size of several tens of nanometers. In Cr$_2$Te$_3$ embedded with Bi-nanosheets, we observe simultaneously a large topological Hall effect together with the magnetic susceptibility plateau and magnetoresistivity anomaly. As a control experiment, none of these signals is observed in the pristine Cr$_2$Te$_3$ samples. Therefore, the Bi-nanosheets serve as seeds of topological Hall effect induced by non-coplanar magnetic textures planted into Cr$_2$Te$_3$. Our experiments demonstrate a new method to generates a large topological Hall effect by planting strong spin-orbit couplings into the traditional ferromagnet, which may have potential applications in spintronics.

cond-mat.mtrl-sci↗

Cryogenic Characerization and Modeling of Standard CMOS down to Liquid Helium Temperature for Quantum Computing

Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias conditions at temperatures ranging from 300K down to 4.2K. We extracted their fundamental physical parameters and developed a compact model based on BSIM3V3. In addition to their I-V characteristics, threshold voltage(Vth) values, on/off current ratio, transconductance of the MOS transistors, and resistors on chips are measured at temperatures from 300K down to 4.2K. A simple subcircuit was built to correct the kink effect. This work provides experimental evidence for implementation of cryogenic CMOS technology, a valid industrial tape-out process model, and romotes the application of integrated circuits in cryogenic environments, including quantum measurement and control systems for quantum chips at very low temperatures.

physics.app-ph↗

Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature

Previous cryogenic electronics studies are most above 4.2K. In this paper we present the cryogenic characterization of a 0.18μm standard bulk CMOS technology(1.8V and 5V) at sub-kelvin temperature around 270mK. PMOS and NMOS devices with different width to length ratios(W/L) are tested and characterized under various bias conditions at temperatures from 300K to 270mK. It is shown that the 0.18μm standard bulk CMOS technology is still working at sub-kelvin temperature. The kink effect and current overshoot phenomenon are observed at sub-kelvin temperature. Especially, current overshoot phenomenon in PMOS devices at sub-kelvin temperature is shown for the first time. The transfer characteristics of large and thin-oxide devices at sub-kelvin temperature are modeled using the simplified EKV model. This work facilitates the CMOS circuits design and the integration of CMOS circuits with silicon-based quantum chips at extremely low temperatures.

physics.app-ph↗

Experimental realization of a fast controlled-Z gate via a shortcut-to-adiabaticity

For a frequency-tunable two-qubit system, a controlled-Z (CZ) gate can be realized by adiabatically driving the qubit system through an avoided level crossing between an auxiliary state and computational levels. Here, we theoretically propose a fast CZ gate using a shortcut-to-adiabaticity (STA). Experimentally, the STA CZ gate is implemented with a 52 ns control pulse for two coupled superconducting Xmon qubits. Measured fidelity of the STA CZ gate is higher than 96.0%, in both quantum process tomography and randomized benchmarking. The protocol allows a flexible design of the evolution time and control waveform. We suggest that this `fast adiabatic' CZ gate can be directly applied to other multi-qubit quantum systems.

quant-ph↗

Single-shot realization of nonadiabatic holonomic gates with a superconducting Xmon qutrit

Nonadiabatic holonomic quantum computation has received increasing attention due to its robustness against control errors as well as high-speed realization. The original protocol of nonadiabatic holonomic one-qubit gates has been experimentally demonstrated with superconducting transmon qutrit. However, the original protocol requires two noncommuting gates to realize an arbitrary one-qubit gate, which doubles the exposure time of gates to error sources and therefore makes the gates vulnerable to environment-induced decoherence. Single-shot protocol was subsequently proposed to realize an arbitrary one-qubit nonadiabatic holonomic gate. In this paper, we experimentally realize the single-shot protocol of nonadiabatic holonomic single qubit gates with a superconducting Xmon qutrit, where all the Clifford element gates are realized by a single-shot implementation. Characterized by quantum process tomography and randomized benchmarking, the single-shot gates reach a fidelity larger than 99%.

quant-ph↗

Quantum plasmonic N00N state in a silver nanowire and its use for quantum sensing

The control of quantum states of light at the nanoscale has become possible in recent years with the use of plasmonics. Here, many types of nanophotonic devices and applications have been suggested that take advantage of quantum optical effects, despite the inherent presence of loss. A key example is quantum plasmonic sensing, which provides sensitivity beyond the classical limit using entangled N00N states and their generalizations in a compact system operating below the diffraction limit. In this work, we experimentally demonstrate the excitation and propagation of a two-plasmon entangled N00N state (N=2) in a silver nanowire, and assess the performance of our system for carrying out quantum sensing. Polarization entangled photon pairs are converted into plasmons in the silver nanowire, which propagate over a distance of 5 um and re-convert back into photons. A full analysis of the plasmonic system finds that the high-quality entanglement is preserved throughout. We measure the characteristic super-resolution phase oscillations of the entangled state via coincidence measurements. We also identify various sources of loss in our setup and show how they can be mitigated, in principle, in order to reach super-sensitivity that goes beyond the classical sensing limit. Our results show that polarization entanglement can be preserved in a plasmonic nanowire and that sensing with a quantum advantage is possible with moderate loss present.

physics.optics↗

Experimental demonstration of work fluctuations along a shortcut to adiabaticity with a superconducting Xmon qubit

In a `shortcut-to-adiabaticity' (STA) protocol, the counter-diabatic Hamiltonian, which suppresses the non-adiabatic transition of a reference `adiabatic' trajectory, induces a quantum uncertainty of the work cost in the framework of quantum thermodynamics. Following a theory derived recently [Funo et al 2017 Phys. Rev. Lett. 118 100602], we perform an experimental measurement of the STA work statistics in a high-quality superconducting Xmon qubit. Through the frozen-Hamiltonian and frozen-population techniques, we experimentally realize the two-point measurement of the work distribution for given initial eigenstates. Our experimental statistics verify (i) the conservation of the average STA work and (ii) the equality between the STA excess of work fluctuations and the quantum geometric tensor.

quant-ph↗

The experimental realization of high-fidelity `shortcut-to-adiabaticity' quantum gates in a superconducting Xmon qubit

Based on a `shortcut-to-adiabaticity' (STA) scheme, we theoretically design and experimentally realize a set of high-fidelity single-qubit quantum gates in a superconducting Xmon qubit system. Through a precise microwave control, the qubit is driven to follow a fast `adiabatic' trajectory with the assistance of a counter-diabatic field and the correction of derivative removal by adiabatic gates. The experimental measurements of quantum process tomography and interleaved randomized benchmarking show that the process fidelities of our STA quantum gates are higher than 94.9% and the gate fidelities are higher than 99.8%, very close to the state-of-art gate fidelity of 99.9%. An alternate of high-fidelity quantum gates is successfully achieved under the STA protocol.

quant-ph↗

Perfectly Conducting Graphene Electronic Waveguide with Curved Channels

We theoretically investigate the electronic transport properties of curved graphene waveguides by employing non-equilibrium Green's function techniques. We systematically study the dependence of the confined waveguide modes on the potential difference, the width of waveguide and side barrier. Through two-terminal electronic transport calculations, we show that the conductance of confined waveguide modes is rather robust against the bending degree of waveguide, in consistent with the band insensitivity to the side barrier. This finding of the perfectly conducting channels strongly suggests the possibility of applying the graphene waveguide in the design of low-power nanoelectronics.

cond-mat.mes-hall↗

Coupling graphene nanomechanical motion to a single-electron transistor

Graphene-based electromechanical resonators have attracted much interest recently because of the outstanding mechanical and electrical properties of graphene and their various applications. However, the coupling between mechanical motion and charge transport has not been explored in graphene. Here, we studied the mechanical properties of a suspended 50-nm-wide graphene nanoribbon, which also acts as a single-electron transistor (SET) at low temperature. Using the SET as a sensitive detector, we found that the resonance frequency could be tuned from 82 MHz to 100 MHz and the quality factor exceeded 30000. The strong charge-mechanical coupling was demonstrated by observing the SET induced ~140 kHz resonance frequency shifts and mechanical damping. We also found that the SET can enhance the nonlinearity of the resonator. Our SET-coupled graphene mechanical resonator could approach an ultra-sensitive mass resolution of ~0.55*10^(-21) g and a force sensitivity of ~1.9*10^(-19) N/(Hz)^(1/2), and can be further improved. These properties indicate that our device is a good platform both for fundamental physical studies and potential applications.

cond-mat.mes-hall↗