arXiv subjects

Gustavo M. Dalpian

Publications and source records attributed to Gustavo M. Dalpian.

At least 19 recordsLinked to original sources

arXiv2026

Ni-O hybridization as a stabilizer for $s^{\pm}$ superconductivity in La$_3$Ni$_2$O$_7$: a DFT+RPA study

The superconducting gap symmetry of high-pressure bilayer nickelates remains under debate, with weak- and strong-coupling approaches yielding different pairing tendencies. In this work, we investigate how the weak-coupling treatment of electronic states away from the Fermi level influences magnetic fluctuations and superconductivity in La$_3$Ni$_2$O$_7$. We employ a full-spectrum model based on orthonormalized projections of Kohn-Sham states onto local Ni-$e_g$ orbitals, which preserves the density-functional band structure while redistributing spectral weight over a wide energy range. Compared to a low-energy description, this approach yields enhanced interlayer spin fluctuations and a commensurate magnetic instability. Within a spin-fluctuation framework, these features favor a sign-changing $s^\pm$ superconducting state, whereas low-energy models tend to stabilize $d$-wave pairing. Our results suggest that interlayer coupling in full-energy models may play an important role in shaping the predicted pairing symmetry of bilayer nickelates.

cond-mat.supr-con↗

arXiv2026

Identifying strong correlation using only the Kohn-Sham density of one-electron states

Strongly correlated systems have long been a central and highly non-trivial topic in condensed matter physics. At the non-interacting level, strong correlation can be associated with powerful (near) degeneracies between occupied and unoccupied states, which leads to a high density of states near the Fermi level in metallic configurations. Such regimes are commonly treated with beyond-density functional theory (DFT) approaches, such as DFT+U or DFT+DMFT while maintaining symmetric configurations. Here, we explore the hypothesis that symmetry breaking in the Kohn-Sham (KS) non-interacting system can qualitatively account for the energetic effects of strong correlation in the corresponding interacting system within standard DFT. By lifting near-degeneracies around the Fermi level, symmetry breaking diminishes the potential correlation effects, reducing the need for an explicit treatment of electron correlation, transforming an otherwise strongly correlated symmetric configuration into a normally correlated one, thus avoiding the need for interacting methods beyond DFT. This naturally connects nonmagnetic to magnetic states. We apply this idea to both strongly and normally correlated metals and observe that spin symmetry breaking leads to a pronounced reduction of the density of states at the Fermi level and a significant lowering of the total energy in strongly correlated cases. To describe the degree of correlation that the interacting system would have relative to the KS state, we introduce a correlation parameter ($Γ$), defined as the ratio between the Kohn-Sham density of one-electron states at the Fermi level and that of a corresponding uniform electron gas. This parameter distinguishes strongly correlated systems, which would require explicit treatment, from normally correlated ones, which do not.

cond-mat.str-el↗

arXiv2026

Intrinsic Instabilities and Mechanical Anisotropy in Halide Perovskite Monolayers

Halide perovskites have been extensively studied owing to their excellent optoelectronic properties and their unique lattice characteristics, that are very soft and anharmonic. Recent studies indicate the importance of a deep understanding of their surfaces and, in the limit, the properties of low-dimensional structures based on these materials. To investigate the structural and electronic properties of halide perovskite monolayers (i.e., perovskenes), this work uses first-principles simulations. We have studied three different stoichiometries (ABX3, ABX4, and A2BX4) and structural phases for iodide, bromide, and chloride perovskite monolayers. Their thermodynamic behavior was evaluated through the construction of phase diagrams, highlighting the instability of the ABX4 stoichiometry, which was further supported by its mechanical instability. Structurally, the covalent characteristics of the Pb--X bond, in contrast to the Cs--X bonds, induce a strong anisotropy in the Young's modulus and Poisson's ratio along different crystallographic directions, and also account for the lower stiffness observed in the phases where the octahedra are not aligned. The electronic properties are somewhat similar to those of their 3D counterparts, but with a slightly larger band gap; in the monolayers, the band gap increases with halogen electronegativity (I, Br, Cl) and octahedral tilting. Moreover, the non-symmetric ABX3 stoichiometry exhibited a spin splitting due to the internal dipole moment in these layers. Overall, our work lays the groundwork for a deeper understanding of low-dimensional structures based on halide perovskites.

cond-mat.mtrl-sci↗

arXiv2023

Exploring chemical compound space with a graph-based recommender system

With the availability of extensive databases of inorganic materials, data-driven approaches leveraging machine learning have gained prominence in materials science research. In this study, we propose an innovative adaptation of data-driven concepts to the mapping and exploration of chemical compound space. Recommender systems, widely utilized for suggesting items to users, employ techniques such as collaborative filtering, which rely on bipartite graphs composed of users, items, and their interactions. Building upon the Open Quantum Materials Database (OQMD), we constructed a bipartite graph where elements from the periodic table and sites within crystal structures are treated as separate entities. The relationships between them, defined by the presence of ions at specific sites and weighted according to the thermodynamic stability of the respective compounds, allowed us to generate an embedding space that contains vector representations for each ion and each site. Through the correlation of ion-site occupancy with their respective distances within the embedding space, we explored new ion-site occupancies, facilitating the discovery of novel stable compounds. Moreover, the graph's embedding space enabled a comprehensive examination of chemical similarities among elements, and a detailed analysis of local geometries of sites. To demonstrate the effectiveness and robustness of our method, we conducted a historical evaluation using different versions of the OQMD and recommended new compounds with Kagome lattices, showcasing the applicability of our approach to practical materials design.

cond-mat.mtrl-sci↗

arXiv2022

Perspective on first-principles studies of 2D materials

The successful exfoliation of graphene from graphite has brought significant attention to predicting new two-dimensional (2D) materials that can be realized experimentally. As a consequence, first-principles studies of novel 2D materials become a routine, with thousands of papers published every year. What makes these studies interesting is that they predict new materials which have not been realized yet but should be a panacea for topological insulators, next-generation battery materials, novel solar cell materials, etc. There is no doubt that some of the proposed materials can provide a specific solution and their properties/performance can be confirmed experimentally, at the same time there are many false predictions because of the computational errors or the Lego-land approach to study 2D materials. To reduce the gap between theoretical and experimental works, we perform a systematic review of computational and Lego-land factors that should be minimized in future theoretical works.

cond-mat.mtrl-sci↗

arXiv2022

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm ZnGa_2O_4$ may be suitable for these applications, standing out as an alternative to $\rm Ga_2O_3$. The simple face centered cubic spinel structure of $\rm ZnGa_2O_4$ results in isotropic electronic and optical properties, in contrast to the large anisotropic properties of the $β$-monoclinic $\rm Ga_2O_3$. In addition, $\rm ZnGa_2O_4$ has shown, on average, better thermal dissipation and potential for $n$- and $p$-type conductivity. Here we use density functional theory and hybrid functional calculations to investigate the electronic, optical, and point defect properties of $\rm ZnGa_2O_4$, focusing on the possibility for $n$- and p-type conductivity. We find that the cation antisite $\rm Ga_{Zn}$ is the lowest energy donor defect that can lead to unintentional $n$-type conductivity. The stability of self-trapped holes (small hole polarons) and the high formation energy of acceptor defects make it difficult to achieve $p$-type conductivity. However, with excess of Zn, forming $\rm Zn_{(1+2x)}Ga_{2(1-x)}O_4$ alloys display an intermediate valence band, facilitating $p$-type conductivity. Due to the localized nature of this intermediate valence band, $p$-type conductivity by polaron hopping is expected, explaining the low mobility and low hole density observed in recent experiments.

cond-mat.mtrl-sci↗

arXiv2022

Machine Learning Study of the Magnetic Ordering in 2D Materials

Magnetic materials have been applied in a large variety of technologies, from data storage to quantum devices. The development of 2D materials has opened new arenas for magnetic compounds, even when classical theories discourage their examination. Here we propose a machine-learning-based strategy to predict and understand magnetic ordering in 2D materials. This strategy couples the prediction of the existence of magnetism in 2D materials using random forest and the SHAP method with material maps defined by atomic features predicting the magnetic ordering (ferromagnetic or antiferromagnetic). While the random forest model predicts magnetism with an accuracy of 86%, the material maps obtained by the SISSO method have an accuracy of about 90% in predicting the magnetic ordering. Our model indicates that 3d transition metals, halides, and structural clusters with regular transition metals sublattices have a positive contribution in the total weight deciding the existence of magnetism in 2D compounds. This behavior is associated with the competition between crystal field and exchange splitting. The machine learning model also indicates that the atomic SOC is a determinant feature for the identification of the patterns separating ferro- from antiferro-magnetic order. The proposed strategy is used to identify novel 2D magnetic compounds which, together with the fundamental trends in the chemical and structural space, paves novel routes for experimental exploration.

cond-mat.mtrl-sci↗

arXiv2022

High throughput inverse design and Bayesian optimization of functionalities: spin splitting in two-dimensional compounds

The development of spintronic devices demands the existence of materials with some kind of spin splitting (SS). In this Data Descriptor, we build a database of ab initio calculated SS in 2D materials. More than that, we propose a workflow for materials design integrating an inverse design approach and a Bayesian inference optimization. We use the prediction of SS prototypes for spintronic applications as an illustrative example of the proposed workflow. The prediction process starts with the establishment of the design principles (the physical mechanism behind the target properties), that are used as filters for materials screening, and followed by density functional theory (DFT) calculations. Applying this process to the C2DB database, we identify and classify 358 2D materials according to SS type at the valence and/or conduction bands. The Bayesian optimization captures trends that are used for the rationalized design of 2D materials with the ideal conditions of band gap and SS for potential spintronics applications. Our workflow can be applied to any other material property.

cond-mat.mtrl-sci↗

arXiv2021

Intrinsic doping limitations in inorganic lead halide perovskites

Inorganic Halide perovskites (HP's) of the CsPbX3 (X=I, Br, Cl) type have reached prominence in photovoltaic solar cell efficiencies. Peculiarly, they have shown, however, an asymmetry in their ability to be doped by holes rather than by electrons. Indeed, both structural defect-induced doping as well as extrinsic impurity-induced doping strangely result in a unipolar doping (dominantly p-type) with low free carriers concentration. This raises the question whether such doping limitations presents just a temporary setback due to insufficient optimization of the doping process, or perhaps this represents an intrinsic, physically-mandated bottleneck. In this paper we study three fundamental Design Principles (DP's) for ideal doping, applying them via density functional doping theory to these HP's, thus identifying the violated DP that explains the doping limitations and asymmetry in these HP's. Here, the target DP are: (i) requires that the thermodynamic transition level induced by the dopants must ideally be energetically shallow both for donors (n-type) or acceptors (p-type); DP-(ii) requires that the 'Fermi level pinning energies' for electrons and holes (being the limiting values of the Fermi level before a structural defect that compensate the doping forms spontaneously) should ideally be located inside the conduction band for n-type doping and inside the valence band for p-type doping. DP-(iii) requires that the doping-induced equilibrium Fermi energy shifts towards the conduction band for n-type doping (shift towards the valence band, for p-type doping) to be sufficiently large. We find that, even though in HP's based on Br and Cl there are numerous shallow level dopants that satisfy DP-(i), in contrast DP-(ii) is satisfied only for holes and DP-(iii) fail for both holes and electrons, being the ultimate bottleneck for the n-type doping in Iodine HP's.

cond-mat.mtrl-sci↗

arXiv2021

The different shapes of spin textures as a journey through Brillouin zone chiral and polar symmetries

Crystallographic space group symmetry (CPGS) such as polar and nonpolar crystal classes have long been known to classify compounds that have spin-orbit-induced spin splitting. While taking a journey through the Brillouin Zone (BZ) from one k-point to another for a fixed CPGS, it is expected that the wavevector point group symmetry (WPGS) can change, and consequently a qualitative change in the texture of the spin polarization (the expectation value of spin operator $\vec{S}^{nk_{0}}$ in Bloch state $u(n,k)$ and the wavevector $k_0$). However, the nature of the spin texture (ST) change is generally unsuspected. In this work, we determine a full classification of the linear-in-$k$ spin texture patterns based on the polarity and chirality reflected in the WPGS at $k_0$. The spin-polarization vector $\vec{S}^{nk_{0}}$ controlling the ST is bound to be parallel to the rotation axis and perpendicular to the mirror planes and hence, symmetry operation types in WPGSs impose symmetry restriction to the ST. For instance, the ST is always parallel to the wavevector $k$ in non-polar chiral WPGSs since they contain only rotational symmetries. Some consequences of the ST classification based on the symmetry operations in the WPGS include the observation of ST patterns that are unexpected according to the symmetry of the crystal. For example, it is usually established that spin-momentum locking effect requires the crystal inversion symmetry breaking by an asymmetric electric potential. However, we find that polar WPGS can have this effect even in compounds without electric dipoles or external electric fields. We use the determined relation between WPGS and ST as a design principle to select compounds with multiple ST near band edges at different $k$-valleys. Based on high-throughput calculations for 1481 compounds, we find 37 previously fabricated materials with different ST near band edges.

cond-mat.mtrl-sci↗

arXiv2020

Tuning Hydrogen Adsorption and Electronic Properties from Graphene to Fluorographone

Graphene functionalization by hydrogen and fluorine has been proposed as a route to modulate its reactivity and electronic properties. However, until now, proposed systems present degradation and limited hydrogen adsorption capacity. In this study, combining first-principles calculations based on density functional theory (DFT) and reactive molecular dynamics, we analyze the tuning of hydrogen adsorption and electronic properties in fluorinated and hydrogenated monolayer graphenes. Our results indicate that fluorine adsorption promotes stronger carbon$-$hydrogen bonds. By changing the concentration of fluorine and hydrogen, charge density transfer and electronic properties such as the band gap and spin-splitting can be tailored, increasing their potential applicability for electronic and spintronic devices. Despite fluorine not affecting the total H incorporation, the $\textit{ab initio}$ molecular dynamics results suggest that 3% fluorinated graphene increases hydrogen anchoring, indicating the hydrogenated and fluorinated graphenes potential for hydrogen storage and related applications.

cond-mat.mtrl-sci↗

arXiv2020

The polymorphous nature of cubic halide perovskites

It has been long known that numerous halide and oxide perovskites can have non-ideal octahedra, showing tilting, rotation, and metal atom displacements. It has also been known that compounds that have at low temperatures a single structural motif ("monomorphous structures") could become disordered at higher temperatures, resulting in non-ideal octahedra as an entropy effect. What is shown here is that in many cubic halide perovskites and some oxides compounds a distribution of different low-symmetry octahedra ("polymorphous networks") emerge already from the minimization of the systems internal energy, i.e., they represent the intrinsic, preferred low temperature pattern of chemical bonding. Thermal disorder effects build up at elevated temperatures on top of such low temperature polymorphous networks. Compared with the monomorphous counterparts, the polymorphous networks have lower predicted total energies (enhanced stability), larger band gaps and dielectric constants now dominated by the ionic part, and agrees much more closely with the observed pair distribution functions. The nominal cubic perovskites (Pm-3m) structure deduced from X-Ray diffraction is actually a macroscopically averaged, high symmetry configuration, which should not be used to model electronic properties, given that the latter reflect a low symmetry local configuration.

cond-mat.mtrl-sci↗

arXiv2019

Realization of predicted exotic materials: The burden of proof

Trove of exotic topoloid structures has recently been predicted by searching for compounds whose calculated band structure crossing points fulfill specific symmetry requirements. Discovery of exciting physical phenomena by experimental studies of such predicted compounds is just around the corner. Yet, the examination of some of these assumed high-symmetry structures suggests that not always will assembly of atoms in a configuration that yields exotic topological properties be protected against energy-lowering symmetry breaking modes. Indeed, although bulk topological characteristics lead to protected surface/edge states, nothing protects bulk states from structural instability. The burden of proof for theoretical predictions of exciting physical phenomena should include some compelling hints that such phenomena can live in thermodynamically stable (or near stable) compounds. Herein, we illustrate how the use of the calculated total (electron + ion) energies of candidate structures can remove false-positive predicted topoloids from the list of likely realizable compounds, to the benefit of the much-cherished iterative process of theory-experiment materials discovery.

cond-mat.mtrl-sci↗

arXiv2019

Anti-doping in Insulators and Semiconductors having Intermediate Bands with Trapped Carriers

Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were sporadically recorded in different materials without noting the mechanism: electron doping was observed to cause a portion of the lowest unoccupied band to merge into the valance band, leading to a decrease in conductivity. This behavior we dub as 'anti-doping' was seen in rare-earth nickel oxides SmNiO3, cobalt oxides SrCoO2.5, Li-ion battery materials and even MgO with metal vacancies. We describe the physical origin of anti-doping as well as its inverse problem, the 'design principles' that would enable intelligent search of materials. We find that electron anti-doping is expected in materials having pre-existing trapped holes and is caused by annihilation of such 'hole polarons' via electron doping. This may offer an unconventional way of controlling conductivity.

cond-mat.mtrl-sci↗

arXiv2019

Zeeman-type spin splitting in non-magnetic three-dimensional compounds: Materials prediction and electrical control

Despite its potential for device application, the non-magnetic Zeeman effect has only been predicted and observed in two-dimensional compounds. We demonstrate that non-centrosymmetric three-dimensional compounds can also exhibit a Zeeman-type spin splitting, allowing the splitting control by changing the growth direction of slabs formed by these compounds. We determine the required conditions for this effect: $i$) non-centrosymmetric including polar and non-polar point groups, $ii$) valence band maximum or conduction band minimum in a generic $k$-point, i.e., non-time-reversal-invariant momentum, and $iii$) zero magnetic moment. Using these conditions as filters, we perform a material screening to systematically search for these systems in the aflow-ICSD database. We find 20 material candidates featuring the Zeeman-type effect. We also found that the spin-splitting in confined systems can be controlled by an external electric field, which in turns can induce a metal-insulator transition. We believe that the Zeeman-type effect in three-dimensional compounds can potentially be used for spin-filtering devices.

cond-mat.mtrl-sci↗

arXiv2018

Formation and composition-dependent properties of alloys of cubic halide perovskites

Distinct shortcomings of individual halide perovskites for solar applications, such as restricted range of band gaps, propensity of ABX3 to decompose into AX+BX2, or oxidation of 2ABX3 into A2BX6 have led to the need to consider alloys of individual perovskites. This creates a non-trivial material-selection problem, spanning a continuum of three sets of compositions (one for each sub lattice), and requiring control of phase-separation or ordering in each alloyed subfield. Not surprisingly, material and structure choices were made thus far mostly via trial-and-error explorations. We use ideas from solid state theory of semiconductor alloys to analyze the behaviors of the (FA,Cs)(Pb,Sn)I3 alloys system. Density functional calculations utilizing specially constructed supercells (SQS) are used to calculate the composition dependence of band gaps, energy of decomposition and alloy mixing enthalpies. A number of trends are observed for A-site as well as for B-site alloys. To understand the physical reasons that control these trends we decompose the alloy properties into distinct physical terms: (i) the energies associated with removing the octahedral deformations (tilting, rotations, B site displacements), (ii) the energies of compressing the larger component and expanding the smaller one to the alloy volume, (iii) the charge transfer energies associated with placing the alloyed units onto a common lattice, and finally, (iv) structural relaxation of all bonds within the cells., This analysis clarifies the origin of the observed trends in bang gaps, decomposition energies and mixing enthalpies. Unlike a number of previous calculations we find that the a proper description of alloy physics requires that even the pure, non-alloyed end-point compounds be allowed to develop local environment dependent octahedral deformation that lowers significantly the total energy and raises their band gaps.

cond-mat.mtrl-sci↗

arXiv2017

Changes in charge density vs changes in formal oxidation states: The case of Sn halide perovskites and their ordered vacancy analogues

Shifting the Fermi energy in solids by doping, defect formation or gating generally results in changes in the charge density distribution, which reflect the ability of the bonding pattern in solids to adjust to such external perturbations. In the ionic limit, such changes are described by the formal oxidation states (FOS) whereby a single atom type is presumed to absorb the full burden of the perturbation (change in charge) of the whole compound. In this picture, when the solar absorber CsSnI3 loses 50 % of its Sn atoms thereby forming the ordered vacancy compound Cs2SnI6, the Sn is said to change from Sn2+ to Sn4+. In reality, the charge redistribution is more complex. To understand the electronic properties of these two groups and to gauge the trends in s-electron charge on the nucleus, we studied the 113/216 compound pairs CsSnCl3/Cs2SnCl6; CsSnBr3/Cs2SnBr6, and CsSnI3/Cs2SnI6. We have calculated the electronic structure of these three compound pairs, complementing them by CsSnF3/Cs2SnF6 in the hypothetical cubic structure for completing the chemical trends. These materials were also synthesized by chemical routes and characterized by X-ray diffraction, Mossbauer spectroscopy and K-edge X-ray Absorption Spectroscopy. We find that in going from 113 to 216 there is a decrease in the s charge on Sn, in agreement with the FOS picture. However, at the same time, we observe an increase of the p charge via downshift of the otherwise unoccupied p level, an effect that tends to replenish much of the lost s charge. This effect is theoretically explained as a self-regulating response [H. Raebiger, S. Lany, and A. Zunger, Nature 453, 763 (2008)] whereby the system re-hybridizes to minimize the effect of the charge perturbation created by vacancy formation. Our work clarifies the relation between FOS and charge transfer that can be applied to a wide variety of materials.

cond-mat.mtrl-sci↗

arXiv2015

Resistive Switching in Nanodevices

Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains unknown. We show that the different resistive states are due to different spontaneously charged states, characterized by different `band bending' solutions of Poisson's equation. For an insulator with mainly donor type defects, the low-resistivity state is characterized by a negatively charged insulator due to convex band bending, and the high-resistivity state by a positively charged insulator due to concave band bending; vice versa for insulators with mainly acceptor type defects. These multiple solutions coexist only for nanoscale devices and for bias voltages limited by the switching threshold values, where the system charge spontaneously changes and the system switches to another resistive state. We outline the general principles how this functionality depends on material properties and defect abundance of the insulator `storage medium', and propose a new magnetic memristor device with increased storage capacity.

cond-mat.mtrl-sci↗