arXiv subjects

Gustavo M. Dalpian

Publications and source records attributed to Gustavo M. Dalpian.

23 records · Page 2Linked to original sources

arXiv2008

Barrierless procedure for substitutionally doping graphene sheets with boron atoms: ab initio calculations

Using ab initio methods, we propose a simple and effective way to substitutionally dope graphene sheets with Boron. The method consists of selectively exposing each side of the graphene sheet to different elements. We first expose one side of the membrane to Boron, while the other side is exposed to Nitrogen. Proceeding this way, the B atoms will be spontaneously incorporated into the graphene membrane, without any activation barrier. In a second step, the system should be exposed to a H-rich environment, that will remove the CN radical from the layer and form HCN, leading to a perfect substitutional doping.

cond-mat.mtrl-sci↗

arXiv2006

Pinned Magnetic Impurity Levels in Doped Quantum Dots

Spectroscopic data demonstrate that impurity D/A levels in doped semiconductor nanostructures are energetically pinned, resulting in variations in D/A binding energies with increasing quantum confinement. Using magnetic circular dichroism spectroscopy, the donor binding energies of Co2+ ions in colloidal ZnSe quantum dots have been measured as a function of quantum confinement and analyzed in conjunction with ab initio density functional theory calculations. The resulting experimental demonstration of pinned impurity levels in quantum dots has far-reaching implications for physical phenomena involving impurity-carrier interactions in doped semiconductor nanostructures, including in the emerging field of semiconductor spintronics where magnetic-dopant-carrier exchange interactions define the functionally relevant properties of diluted magnetic semiconductors.

cond-mat.mtrl-sci↗

arXiv2005

Electron-induced stabilization of ferromagnetism in GaGdN

Using {\it ab initio} band structure calculations and symmetry arguments, we show that the magnetic property of Ga$_{1-x}$Gd$_x$N is drastically different from TM-doped GaN. The coupling between Gd atoms in the alloy is antiferromagnetic, but the ferromagnetic phase can be stabilized by introducing electrons. Furthermore, we propose a model that may explain the recently observed colossal magnetic moments in this system, based on the polarization of donor electrons.

cond-mat.mtrl-sci↗

arXiv2005

Band structure model of magnetic coupling in semiconductors

We present a unified band structure model to explain magnetic ordering in Mn-doped semiconductors. This model is based on the $p$-$d$ and $d$-$d$ level repulsions between the Mn ions and host elements and can successfully explain magnetic ordering observed in all Mn doped II-VI and III-V semiconductors such as CdTe, GaAs, ZnO, and GaN. This model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.

cond-mat.mtrl-sci↗

arXiv2005

Transition from Ferromagnetism to Antiferromagnetism in Ga$_{1-x}$Mn$_x$N

Using density functional theory, we study the magnetic stability of the Ga$_{1-x}$Mn$_x$N alloy system. We show that unlike Ga$_{1-x}$Mn$_x$As, which shows only ferromagnetic (FM) phase, Ga$_{1-x}$Mn$_x$N can be stable in either FM or antiferromagnetic phases depending on the alloy concentration. The magnetic order can also be altered by applying pressure or with charge compensation. A unified model is used to explain these behaviors.

cond-mat.mtrl-sci↗