arXiv subjects

Håkan Rensmo

Publications and source records attributed to Håkan Rensmo.

6 recordsLinked to original sources

arXiv2026

Resolving the energy alignment between methylammonium lead iodide and C60: an in-situ photoelectron spectroscopy study

Understanding and controlling the energy level alignment at interfaces between lead halide perovskites and electron transport layers is crucial for optimizing perovskite-based devices such as solar cells. In this work, we investigated the energy level alignment of C60 on in-situ cleaved MAPbI3 single crystals in multiple repeat experiments using photoelectron spectroscopy aiming to resolve inconsistencies reported in earlier studies. Our results show that both materials remain chemically stable upon interface formation, in contrast to the strong reactions typically seen when metals are evaporated on perovskite surfaces. By analyzing the Pb 4f and C 1s binding energies in detail, we determined that C60 consistently exhibits a downward energy shift toward MAPbI3, which works against efficient charge extraction. The magnitude of this shift, however, varies between different sample positions, highlighting that small variations in sample surfaces can lead to significant differences in energetic alignment. At higher C60 coverages of more than 5 monolayers, a constant HOMO-valence band offset of 0.52 eV was obtained. These findings underscore the decisive role of surface chemistry on interfacial energetics, explain performance variability in perovskite devices, and demonstrate the need to control and accurately measure surface properties. Furthermore, the observed energetic alignment can explain why further interface modification by charge blocking layers or surface passivation is needed for optimized device efficiencies.

cond-mat.mtrl-sci↗

arXiv2024

Charge Transport and Defects in Sulfur-Deficient Chalcogenide Perovskite BaZrS$_3$

Exploring the conduction mechanism in the chalcogenide perovskite BaZrS$_3$ is of significant interest due to its potential suitability as a top absorber layer in silicon-based tandem solar cells and other optoelectronic applications. Theoretical and experimental studies anticipate native ambipolar doping in BaZrS$_3$, although experimental validation remains limited. This study reveals a transition from highly insulating behavior to n-type conductivity in BaZrS$_3$ through annealing in an S-poor environment. BaZrS$_3$ thin films are synthesized $\textit{via}$ a two step process: co-sputtering of Ba-Zr followed by sulfurization at 600 $^{\circ}$C, and subsequent annealing in high vacuum. UV-Vis measurement reveal a red-shift in the absorption edge concurrent with sample color darkening after annealing. The increase in defect density with vacuum annealing, coupled with low activation energy and n-type character of defects, strongly suggests that sulfur vacancies (V$_{\mathrm{S}}$) are responsible, in agreement with theoretical predictions. The shift of the Fermi level towards conduction band minimum, quantified by Hard X-ray Photoelectron Spectroscopy (Ga K$α$, 9.25 keV), further corroborates the induced n-type of conductivity in annealed samples. Our findings indicate that vacuum annealing induces V$_{\mathrm{S}}$ defects that dominate the charge transport, thereby making BaZrS$_3$ an n-type semiconductor under S-poor conditions. This study offers crucial insights into understanding the defect properties of BaZrS$_3$, facilitating further improvements for its use in solar cell applications.

cond-mat.mtrl-sci↗

arXiv2023

Experimentally observed defect tolerance in the electronic structure of lead bromide perovskites

Point defect tolerance in materials, which extends operational lifetime, is essential for societal sustainability, and the creation of a framework to design such properties is a grand challenge in the material sciences. Using three prototypical lead bromide perovskites in single crystal form and high-resolution synchrotron-based X-ray spectroscopy, we reveal the unexpectedly pivotal role of the A-cation in mediating the influence of photoinduced defects. Organic A-cation hydrogen bonding facilitates chemical flexing of the lead-bromide bond that mitigates the self-doping effect of bromide vacancies. The contribution of partially ionic lead-bromide bonding to the electronic band edges, where the bonding becomes more ionic upon the formation of defects, mitigates re-hybridization of the electronic structure upon degradation. These findings reveal two new general design principles for defect tolerance in materials. Our findings uncover the foundations of defect tolerance in halide perovskites and have implications for defect calculations, all beam-based measurements of photophysical properties and perovskite solar cell technology.

cond-mat.mtrl-sci↗

arXiv2021

A-site Cation Influence on the Conduction Band of Lead Bromide Perovskites

Hot carrier solar cells hold promise for exceeding the Shockley-Queisser limit. Slow hot carrier cooling is one of the most intriguing properties of lead halide perovskites and distinguishes this class of materials from competing materials used in solar cells. Here we use the element selectivity of high-resolution X-ray spectroscopy to uncover a previously hidden feature in the conduction band states, the σ-π energy separation, and find that it is strongly influenced by the strength of electronic coupling between the A-cation and bromide-lead sublattice. Our finding provides an alternative mechanism to the commonly discussed polaronic screening and hot phonon bottleneck carrier cooling mechanisms. Our work emphasizes the optoelectronic role of the A-cation, provides a comprehensive view of A-cation effects in the electronic and crystal structures, and outlines a broadly applicable spectroscopic approach for assessing the impact of chemical alterations of the A-cation on halide and potentially non-halide perovskite electronic structure.

cond-mat.mtrl-sci↗

arXiv2021

Electronic Coupling between the Unoccupied States of the Organic and Inorganic Sub-Lattices of Methylammonium Lead Iodide a Hybrid Organic-Inorganic Perovskite Single Crystal

Organic-inorganic halide perovskites have been intensively re-investigated due to their applications, yet the opto-electronic function of the organic cation remains unclear. Through organic-selective resonant Auger electron spectroscopy measurements on well-defined single crystal surfaces, we find evidence for electronic coupling in the unoccupied states between the organic and inorganic sub-lattices of the prototypical hybrid perovskite, which is contrary to the notion based on previous studies that the organic cation is electronically inert. The coupling is relevant for electron dynamics in the material and for understanding opto-electronic functionality.

cond-mat.mtrl-sci↗

arXiv2017

Maximising and Stabilising Luminescence in Metal Halide Perovskite Device Structures

Metal halide perovskites are attracting tremendous interest for a variety of optoelectronic applications. The ability to tune the perovskite bandgap by tweaking the chemical compositions opens up new applications as coloured emitters and as components of tandem photovoltaics. Nevertheless, non-radiative losses are still limiting performance, with luminescence yields in state-of-the-art perovskite solar cells still far from 100% under solar illumination conditions. Furthermore, in mixed halide perovskite systems designed for continuous bandgap tunability (bandgaps ~1.7-1.9 eV), photo-induced ion segregation leads to bandgap instabilities. Here, we substantially mitigate both non-radiative losses and photo-induced ion migration in perovskite structures by decorating the surfaces and grain boundaries with passivating potassium-halide interlayers. We demonstrate external photo-luminescence quantum yields of 66%, translating to internal yields exceeding 95%. The high luminescence yields are achieved while maintaining high mobilities over 40 cm2V-1s-1, giving the elusive combination of both high luminescence and excellent charge transport. We find that the external luminescence yield when interfaced with electrodes in a solar cell device stack, a quantity that must be maximized to approach the efficiency limits, remains as high as 15%, indicating very clean interfaces. We also demonstrate the inhibition of photo-induced ion migration processes across a wide range of mixed halide perovskite bandgaps that otherwise show bandgap instabilities. We validate these results in full operating solar cells, highlighting the importance of stabilising luminescence in device structures. Our work represents a critical breakthrough in the construction of tunable halide perovskite films and interfaces that can approach the efficiency limits in tandem solar cells and coloured LEDs.

cond-mat.mtrl-sci↗