Charge Transport and Defects in Sulfur-Deficient Chalcogenide Perovskite BaZrS$_3$

Garima Aggarwal; Adeem Saeed Mirza; Stefania Riva; Corrado Comparotto; Robert J. W. Frost; Soham Mukherjee; Monica Morales-Masis; Håkan Rensmo; Jonathan Staaf Scragg

arXiv · 2405.17327

Charge Transport and Defects in Sulfur-Deficient Chalcogenide Perovskite BaZrS$_3$

Garima Aggarwal·Adeem Saeed Mirza·Stefania Riva·Corrado Comparotto·Robert J. W. Frost·Soham Mukherjee·Monica Morales-Masis·Håkan Rensmo·Jonathan Staaf Scragg

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Abstract

Exploring the conduction mechanism in the chalcogenide perovskite BaZrS$_3$ is of significant interest due to its potential suitability as a top absorber layer in silicon-based tandem solar cells and other optoelectronic applications. Theoretical and experimental studies anticipate native ambipolar doping in BaZrS$_3$, although experimental validation remains limited. This study reveals a transition from highly insulating behavior to n-type conductivity in BaZrS$_3$ through annealing in an S-poor environment. BaZrS$_3$ thin films are synthesized $\textit{via}$ a two step process: co-sputtering of Ba-Zr followed by sulfurization at 600 $^{\circ}$C, and subsequent annealing in high vacuum. UV-Vis measurement reveal a red-shift in the absorption edge concurrent with sample color darkening after annealing. The increase in defect density with vacuum annealing, coupled with low activation energy and n-type character of defects, strongly suggests that sulfur vacancies (V$_{\mathrm{S}}$) are responsible, in agreement with theoretical predictions. The shift of the Fermi level towards conduction band minimum, quantified by Hard X-ray Photoelectron Spectroscopy (Ga K$\alpha$, 9.25 keV), further corroborates the induced n-type of conductivity in annealed samples. Our findings indicate that vacuum annealing induces V$_{\mathrm{S}}$ defects that dominate the charge transport, thereby making BaZrS$_3$ an n-type semiconductor under S-poor conditions. This study offers crucial insights into understanding the defect properties of BaZrS$_3$, facilitating further improvements for its use in solar cell applications.

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Garima Aggarwal, Adeem Saeed Mirza, Stefania Riva, Corrado Comparotto, Robert J. W. Frost, Soham Mukherjee, Monica Morales-Masis, Håkan Rensmo, Jonathan Staaf Scragg. 2024-05-27. Charge Transport and Defects in Sulfur-Deficient Chalcogenide Perovskite BaZrS$_3$. https://arxiv.org/abs/2405.17327

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