arXiv subjects

H. Kohlstedt

Publications and source records attributed to H. Kohlstedt.

27 records · Page 2Linked to original sources

arXiv2007

Low-T_c Josephson junctions with tailored barrier

Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb based superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson tunnel junctions with a thickness step in the metallic ferromagnetic \Ni_{0.6}\Cu_{0.4} interlayer were fabricated. The step was defined by optical lithography and controlled etching. The step height is on the scale of a few angstroms. Experimentally determined junction parameters by current-voltage characteristics and Fraunhofer pattern indicate an uniform F-layer thickness and the same interface transparencies for etched and non-etched F-layers. This technique could be used to tailor low-T_c Josephson junctions having controlled critical current densities at defined parts of the junction area, as needed for tunable resonators, magnetic-field driven electronics or phase modulated devices.

cond-mat.supr-con↗

arXiv2006

Depolarizing-Field Effect in Strained Nanoscale Ferroelectric Capacitors and Tunnel Junctions

The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodynamic theory. It is predicted that, in heterostructures involving strained epitaxial films and metal electrodes, the homogeneous polarization state may remain stable against transformations into the paraelectric phase and into polydomain states down to the nanoscale. This result supports the possibility of depolarizing-field-related resistive switching in ferroelectric tunnel junctions with dissimilar electrodes. The resistance on/off ratio in such junctions is shown to be governed by the difference between the reciprocal capacitances of screening space charges in the electrodes.

cond-mat.mtrl-sci↗

arXiv2006

0-pi Josephson tunnel junctions with ferromagnetic barrier

We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critical currents of 0 and pi parts. The ground state of our 330 microns (1.3 lambda_J) long junction corresponds to a spontaneous vortex of supercurrent pinned at the 0-pi step and carrying ~6.7% of the magnetic flux quantum Phi_0. The dependence of the critical current on the applied magnetic field shows a clear minimum in the vicinity of zero field.

cond-mat.supr-con↗

arXiv2006

High quality ferromagnetic 0 and pi Josephson tunnel junctions

We fabricated high quality $\Nb/\Al_2Ø_3/\Ni_{0.6}\Cu_{0.4}/\Nb$ superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Depending on the thickness of the ferromagnetic $\Ni_{0.6}\Cu_{0.4}$ layer and on the ambient temperature, the junctions were in the 0 or $π$ ground state. All junctions have homogeneous interfaces showing almost perfect Fraunhofer patterns. The $\Al_2Ø_3$ tunnel barrier allows to achieve rather low damping, which is desired for many experiments especially in the quantum domain. The McCumber parameter $β_c$ increases exponentially with decreasing temperature and reaches $β_c\approx700$ at $T=2.1 {\rm K}$. The critical current density in the $π$ state was up to $5\:\rm{A/cm^2}$ at $T=2.1 {\rm K}$, resulting in a Josephson penetration depth $λ_J$ as low as $160\:\rm{μm}$. Experimentally determined junction parameters are well described by theory taking into account spin-flip scattering in the $\Ni_{0.6}\Cu_{0.4}$ layer and different transparencies of the interfaces.

cond-mat.supr-con↗

arXiv2005

Fabrication of high quality ferromagnetic Josephson junctions

We present ferromagnetic Nb/Al2O3/Ni60Cu40/Nb Josephson junctions (SIFS) with an ultrathin Al2O3 tunnel barrier. The junction fabrication was optimized regarding junction insulation and homogeneity of current transport. Using ion-beam-etching and anodic oxidation we defined and insulated the junction mesas. The additional 2 nm thin Cu layer below the ferromagnetic NiCu (SINFS) lowered interface roughness and ensured very homogeneous current transport. A high yield of junctional devices with jc spreads less than 2% was obtained.

cond-mat.supr-con↗

arXiv2005

Theoretical current-voltage characteristics of ferroelectric tunnel junctions

We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroelectric materials on the tunnel current is described. The calculations show that the lattice strains of piezoelectric origin modify the current-voltage relationship owing to strain-induced changes of the barrier thickness, electron effective mass, and position of the conduction-band edge. Remarkably, the conductance minimum becomes shifted from zero voltage due to the piezoelectric effect, and a strain-related resistive switching takes place after the polarization reversal in a ferroelectric barrier. Second, we analyze the influence of the internal electric field arising due to imperfect screening of polarization charges by electrons in metal electrodes. It is shown that, for asymmetric FTJs, this depolarizing-field effect also leads to a considerable change of the barrier resistance after the polarization reversal. However, the symmetry of the resulting current-voltage loop is different from that characteristic of the strain-related resistive switching. The crossover from one to another type of the hysteretic curve, which accompanies the increase of FTJ asymmetry, is described taking into account both the strain and depolarizing-field effects. It is noted that asymmetric FTJs with dissimilar top and bottom electrodes are preferable for the non-volatile memory applications because of a larger resistance on/off ratio.

cond-mat.mtrl-sci↗

arXiv2005

Simulation of quantum dead-layers in ferroelectric tunnel junctions

In this letter, we simulate electronic transport through a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We show that quantum effects such as Friedel oscillations lead to deviations from the Thomas-Fermi screening model. As a consequence, we predict a bistable resistive switching effect, depending on the polarization state of the ferroelectric tunnel barrier.

cond-mat.other↗

arXiv2004

Polarization states of polydomain epitaxial Pb(Zr1-xTix)O3 thin films and their dielectric properties

Ferroelectric and dielectric properties of polydomain (twinned) single-crystal Pb(Zr1-xTix)O3 thin films are described with the aid of a nonlinear thermodynamic theory, which has been developed recently for epitaxial ferroelectric films with dense laminar domain structures. For Pb(Zr1-xTix)O3 (PZT) films with compositions x = 0.9, 0.8, 0.7, 0.6, 0.5, and 0.4, the "misfit strain-temperature" phase diagrams are calculated and compared with each other. It is found that the equilibrium diagrams of PZT films with x > 0.7 are similar to the diagram of PbTiO3 films. They consist of only four different stability ranges, which correspond to the paraelectric phase, single-domain tetragonal ferroelectric phase, and two pseudo-tetragonal domain patterns. In contrast, at x = 0.4, 0.5, and 0.6, the equilibrium diagram displays a rich variety of stable polarization states, involving at least one monoclinic polydomain state. Using the developed phase diagrams, the mean out-of-plane polarization of a poled PZT film is calculated as a function of the misfit strain and composition. Theoretical results are compared with the measured remanent polarizations of PZT films grown on SrTiO3. Dependence of the out-of-plane dielectric response of PZT films on the misfit strain in the heterostructure is also reported.

cond-mat.mtrl-sci↗

arXiv2001

Ultrathin epitaxial ferroelectric films grown on compressive substrates: Competition between the surface and strain effects

The mean-field Landau-type theory is used to analyze the polarization properties of epitaxial ferroelectric thin films grown on dissimilar cubic substrates, which induce biaxial compressive stress in the film plane. The intrinsic effect of the film surfaces on the spontaneous polarization is taken into account via the concept of the extrapolation length. The theory simultaneously allows for the influence of the misfit strain imposed on the film lattice by a thick substrate. Numerical calculations are performed for PbTiO3 and BaTiO3 films under an assumption of the polarization reduction in surface layers. The film mean polarization is calculated as a function of film thickness, temperature, and misfit strain. It is shown that the negative intrinsic size effect is reduced in epitaxial films due to the in-plane compression of the film lattice. At room temperature, strong reduction of the mean polarization may take place only in ultrathin films (thickness ~ 1 nm). Theoretical predictions are compared with the available experimental data on polarization properties of BaTiO3 films grown on SrRuO3 coated SrTiO3.

cond-mat.mtrl-sci↗