arXiv subjects

H. L. Stormer

Publications and source records attributed to H. L. Stormer.

At least 37 records · Page 2Linked to original sources

arXiv2005

Evidence for Skyrmion crystallization from NMR relaxation experiments

A resistively detected NMR technique was used to probe the two-dimensional electron gas in a GaAs/AlGaAs quantum well. The spin-lattice relaxation rate $(1/T_{1})$ was extracted at near complete filling of the first Landau level by electrons. The nuclear spin of $^{75}$As is found to relax much more efficiently with $T\to 0$ and when a well developed quantum Hall state with $R_{xx}\simeq 0$ occurs. The data show a remarkable correlation between the nuclear spin relaxation and localization. This suggests that the magnetic ground state near complete filling of the first Landau level may contain a lattice of topological spin texture, i.e. a Skyrmion crystal.

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arXiv2004

Competition Between Fractional Quantum Hall Liquid, Bubble and Wigner Crystal Phases in the Third Landau Level

Magnetotransport measurements were performed in a ultra-high mobility GaAs/AlGaAs quantum well of density $\sim 3.0 \times 10^{11}$ $cm^{-2}$. The temperature dependence of the magnetoresistance $R_{xx}$ was studied in detail in the vicinity of $ν={9/2}$. In particular, we discovered new minima in $R_{xx}$ at filling factor $ν\simeq 4{1/5}$ and $4{4/5}$, but only at intermediate temperatures $80\lesssim T\lesssim 120$ mK. We interpret these as evidence for a fractional quantum Hall liquid forming in the N=2 Landau level and competing with bubble and Wigner crystal phases favored at lower temperatures. Our data suggest that a magnetically driven insulator-insulator quantum phase transition occurs between the bubble and Wigner crystal phases at T=0.

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arXiv2004

Tilt Induced Localization and Delocalization in the Second Landau Level

We have investigated the behavior of electronic phases of the second Landau level under tilted magnetic fields. The fractional quantum Hall liquids at $ν=$2+1/5 and 2+4/5 and the solid phases at $ν=$2.30, 2.44, 2.57, and 2.70 are quickly destroyed with tilt. This behavior can be interpreted as a tilt driven localization of the 2+1/5 and 2+4/5 fractional quantum Hall liquids and a delocalization through melting of solid phases in the top Landau level, respectively. The evolution towards the classical Hall gas of the solid phases is suggestive of antiferromagnetic ordering.

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arXiv2004

Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures

We determine the density-dependent electron mass, m*, in two-dimensional (2D) electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov deHaas measurements. Using very high quality transistors with tunable electron densities we measure m* in single, high mobility specimens over a wide range of r_s (6 to 0.8). Toward low-densities we observe a rapid increase of m* by as much as 40%. For 2>r_s>0.8 the mass values fall ~10% below the band mass of GaAs. Numerical calculations are in qualitative agreement with our data but differ considerably in detail.

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arXiv2004

Electron correlation in the second Landau level; a competition between many, nearly degenerate quantum phases

At a very low temperature of 9mK, electrons in the 2nd Landau level of an extremely high mobility two-dimensional electron system exhibit a very complex electronic behavior. With varying filling factor, quantum liquids of different origins compete with several insulating phases leading to an irregular pattern in the transport parameters. We observe a fully developed $ν=2+2/5$ state separated from the even-denominator $ν=2+1/2$ state by an insulating phase and a $ν=2+2/7$ and $ν=2+1/5$ state surrounded by such phases. A developing plateau at $ν=2+3/8$ points to the existence of other even-denominator states.

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arXiv2003

Electron Scattering in AlGaN/GaN Structures

We present data on mobility lifetime, $τ_t$, quantum lifetime, $τ_q$, and cyclotron resonance lifetime, $τ_{CR}$, of a sequence of high-mobility two-dimensional electron gases in the AlGaN/GaN system, covering a density range of $\sim1-4.5\times10^{12}$cm$^{-2}$. We observe a large discrepancy between $τ_q$ and $τ_{CR}$ ($τ_q\simτ_{CR}$/6) and explain it as the result of density fluctuations of only a few percent. Therefore, only $τ_{CR}$ --and not $τ_q$ -- is a reliable measure of the time between electron scattering events in these specimens. The ratio $τ_t / τ_{CR}$ increases with increasing density in this series of samples, but scattering over this density range remains predominantly in the large-angle scattering regime.

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arXiv2003

Non-parabolicity of the conduction band of wurtzite GaN

Using cyclotron resonance, we measure the effective mass, $m$*, of electrons in AlGaN/GaN heterostructures with densities, $n_{2D}\sim 1-6\times10^{12}$cm$^{-2}$. From our extensive data, we extrapolate a band edge mass of $(0.208\pm0.002) m_e$. By comparing our $m$* data with the results of a multi-band \textbf{k.p} calculation we infer that the effect of remote bands is essential in explaining the observed conduction band non-parabolicity (NP). Our calculation of polaron mass corrections -- including finite width and screening - suggests those to be negligible. It implies that the behavior of $m*(n_{2D})$ can be understood solely in terms of NP. Finally, using our NP and polaron corrections, we are able to reduce the large scatter in the published band edge mass values.

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arXiv2003

Large Splitting of the Cyclotron Resonance Line in AlGaN/GaN Heterostructures

Cyclotron-resonance (CR) measurements on two-dimensional (2D) electrons in AlGaN/GaN heterojunctions reveal large splittings (up to 2 meV) of the CR line for all investigated densities, $n_{2D}$, from 1 to $4\times 10^{12}cm^{-2}$ over wide ranges of magnetic field. The features resemble a level anti-crossing and imply a strong interaction with an unknown excitation of the solid. The critical energy of the splitting varies from 5 to 12 meV and as $\sqrt{n_{2D}}$. The phenomenon resembles data from AlGaAs/GaAs whose origin remains unresolved. It highlights a lack of basic understanding of a very elementary resonance in solids.

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arXiv2003

Transition from an electron solid to the sequence of fractional quantum Hall states at very low Landau level filling factor

At low Landau level filling of a two-dimensional electron system, typically associated with the formation of an electron crystal, we observe local minima in Rxx at filling factors nu=2/11, 3/17, 3/19, 2/13, 1/7, 2/15, 2/17, and 1/9. Each of these developing fractional quantum Hall (FQHE) states appears only above a filling factor-specific temperature. This can be interpreted as the melting of an electron crystal and subsequent FQHE liquid formation. The observed sequence of FQHE states follow the series of composite fermion states emanating from nu=1/6 and nu=1/8.

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arXiv2003

Fractional Quantum Hall Effect of Composite Fermions

In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do not fit into the standard series of integral quantum Hall effects (IQHE) of composite fermions (CF) at nu=p/(2mp +/- 1). They rather can be regarded as the FQHE of CFs attesting to residual interactions between these composite particles. In tilted magnetic fields the nu=4/11 state remains unchanged, strongly suggesting it to be spin-polarized. The weak nu=7/11 state vanishes quickly with tilt.

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arXiv2003

Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System

We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the density dependence as well as the polarization dependence of the spin susceptibility. It can account for the anomalous g-factors reported recently in GaAs electron and hole systems. The paramagnetic spin susceptibility increases with decreasing density as expected from theoretical calculations.

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arXiv2002

Density Induced Interchange of Anisotropy Axes at Half-Filled High Landau Levels

We observe density induced 90$^{\circ}$ rotations of the anisotropy axes in transport measurements at half-filled high Landau levels in the two dimensional electron system, where stripe states are proposed ($ν$=9/2, 11/2, etc). Using a field effect transistor, we find the transition density to be $2.9\times10^{11}$cm$^{-2}$ at $ν$=9/2. Hysteresis is observed in the vicinity of the transition. We construct a phase boundary in the filling factor-magnetic field plane in the regime $4.4<ν<4.6$. An in-plane magnetic field applied along either anisotropy axis always stabilizes the low density orientation of the stripes.

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arXiv2001

Experimental Evidence for a Spin-Polarized Ground State in the ν=5/2 Fractional Quantum Hall Effect

We study the ν=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6 \times 10^{11} cm^{-2} with a peak mobility μ= 5.5 \times 10^6 cm^2/Vs. The ν=5/2 state shows a strong minimum in diagonal resistance and a developing Hall plateau at magnetic fields as high as 12.6T. The strength of the energy gap varies smoothly with B-field. We interpret these observations as strong evidence for a spin-polarized ground state at ν=5/2.

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arXiv2001

Highly Anisotropic Transport in the Integer Quantum Hall Effect

At very large tilt of the magnetic (B) field with respect to the plane of a two-dimensional electron system the transport in the integer quantum Hall regime at $ν$ = 4, 6, and 8 becomes strongly anisotropic. At these filling factors the usual {\em deep minima} in the magneto-resistance occur for the current flowing {\em perpendicular} to the in-plane B field direction but develop into {\em strong maxima} for the current flowing {\em parallel} to the in-plane B field. The origin of this anisotropy is unknown but resembles the recently observed anisotropy at half-filled Landau levels.

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arXiv2000

Reorientation of Anisotropy in a Square Well Quantum Hall Sample

We have measured magnetotransport at half-filled high Landau levels in a quantum well with two occupied electric subbands. We find resistivities that are {\em isotropic} in perpendicular magnetic field but become strongly {\em anisotropic} at $ν$ = 9/2 and 11/2 on tilting the field. The anisotropy appears at an in-plane field, $B_{ip} \sim$ 2.5T, with the easy-current direction {\em parallel} to $B_{ip}$ but rotates by 90$^{\circ}$ at $B_{ip} \sim$ 10T and points now in the same direction as in single-subband samples. This complex behavior is in quantitative agreement with theoretical calculations based on a unidirectional charge density wave state model.

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arXiv1999

Tunneling between the Edges of Two Lateral Quantum Hall Systems

The edge of a two-dimensional electron system (2DES) in a magnetic field consists of one-dimensional (1D) edge-channels that arise from the confining electric field at the edge of the specimen$^{1-3}$. The crossed electric and magnetic fields, E x B, cause electrons to drift parallel to the sample boundary creating a chiral current that travels along the edge in only one direction. Remarkably, in an ideal 2DES in the quantum Hall regime all current flows along the edge$^{4-6}$. Quantization of the Hall resistance, $R_{xy}= h/Ne^{2}$, arises from occupation of N 1D edge channels, each contributing a conductance of $e^{2}/h^{7-11}$. To explore this unusual one-dimensional property of an otherwise two-dimensional system, we have studied tunneling between the edges of 2DESs in the regime of integer quantum Hall effect (QHE). In the presence of an atomically precise, high-quality tunnel barrier, the resultant interaction between the edge states leads to the formation of new energy gaps and an intriguing dispersion relation for electrons traveling along the barrier. The absence of tunneling features due to the electron spin and the persistence of a conductance peak at zero bias are not consistent with a model of weakly interacting edge states.

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arXiv1999

Effective Mass of the Four Flux Composite Fermion at $ν= 1/4$

We have measured the effective mass ($m^*$) of the four flux composite fermion at Landau level filling factor $ν= 1/4$ ($^4$CF), using the activation energy gaps at the fractional quantum Hall effect (FQHE) states $ν$ = 2/7, 3/11, and 4/15 and the temperature dependence of the Shubnikov-de Haas (SdH) oscillations around $ν= 1/4$. We find that the energy gaps show a linear dependence on the effective magnetic field $B_{eff}$ ($\equiv B-B_{ν=1/4}$), and from this linear dependence we obtain $m^* = 1.0 m_e$ and a disorder broadening $Γ\sim$ 1 K for a sample of density $n = 0.87 \times 10^{11}$ /cm$^2$. The $m^*$ deduced from the temperature dependence of the SdH effect shows large differences for $ν> 1/4$ and $ν< 1/4$. For $ν> 1/4$, $m^* \sim 1.0 m_e$. It scales as $\sqrt{B_ν}$ with the mass derived from the data around $ν=1/2$ and shows an increase in $m^*$ as $ν\to 1/4$, resembling the findings around $ν=1/2$. For $ν< 1/4$, $m^*$ increases rapidly with increasing $B_{eff}$ and can be described by $m^*/m_e = -3.3 + 5.7 \times B_{eff}$. This anomalous dependence on $B_{eff}$ is precursory to the formation of the insulating phase at still lower filling.

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arXiv1999

Hysteresis and Spikes in the Quantum Hall Effect

We observe sharp peaks and strong hysteresis in the electronic transport of a two-dimensional electron gas (2DEG) in the region of the integral quantum Hall effect. The peaks decay on time scales ranging from several minutes to more than an hour. Momentary grounding of some of the contacts can vastly modify the strength of the peaks. All these features disappear under application of a negative bias voltage to the backside of the specimen. We conclude, that a conduction channel parallel to the high mobility 2DEG is the origin for the peaks and their hysteretic behavior.

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