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H. Mei

Publications and source records attributed to H. Mei.

At least 19 recordsLinked to original sources

High Multiplicity Trigger for Long-Lived Particles in CMS detector

Searches for long-lived particles (LLPs) at the CMS experiment often involve unconventional event topologies that are difficult to efficiently select using standard trigger strategies. To improve sensitivity to such signatures during LHC Run~3 operation, a dedicated High Multiplicity Trigger (HMT) has been developed and deployed in the CMS trigger system. The trigger targets events containing unusually large numbers of hits in the CMS cathode strip chamber (CSC) muon detectors, a characteristic signature of several LLP scenarios involving displaced decays in the muon system. The HMT implementation, trigger logic, rate dependence with pileup, and operational stability are described. Optimized hit multiplicity thresholds are used to maintain acceptable trigger rates under high-luminosity and high-pileup conditions while preserving high efficiency across a broad range of LLP lifetimes and kinematic regimes. The trigger performance is evaluated using both simulated event samples and proton-proton collision data collected during Run~3 of the LHC. The HMT substantially extends the CMS sensitivity to non-standard signatures associated with LLP decays and provides a flexible platform for future searches for physics beyond the Standard Model.

hep-ex

Search for millicharged particles in proton-proton collisions at $\sqrt{s} = 13.6$ TeV

We report on a search for elementary particles with charges much smaller than the electron charge using a data sample of proton-proton collisions provided by the CERN Large Hadron Collider in 2023--24, corresponding to an integrated luminosity of 124.7~fb$^{-1}$ at a center-of-mass energy of 13.6~TeV. The analysis presented uses the completed Run 3 milliQan bar detector to set the most stringent constraints to date for particles with charges $\leq0.24~\rm{e}$ and masses $\geq0.45~\rm{GeV}$.

hep-ex

Metasurface-enhanced mid-infrared spectrochemical imaging of tissues

Label-free and nondestructive mid-infrared vibrational hyperspectral imaging is emerging as an important ex-vivo tissue analysis tool, providing spatially resolved biochemical information critical to understanding physiological and pathological processes. However, the chemically complex and spatially heterogeneous composition of tissue specimens and the inherently weak interaction of infrared light with biomolecules limit the analytical performance of infrared absorption spectroscopy. Here, we introduce an advanced mid-infrared spectrochemical tissue imaging modality using metasurfaces that support strong surface-localized electromagnetic fields to capture quantitative molecular maps of large-area murine brain-tissue sections. Our approach leverages polarization-multiplexed multi-resonance plasmonic metasurfaces to simultaneously detect many different functional biomolecules. The resulting surface-enhanced mid-infrared spectral imaging (SE-MIRSI) method eliminates the non-specific effects of bulk tissue morphology on the quantitative analysis of fingerprint spectra and improves the chemical selectivity. We show that the metasurface enhancement increases the retrieval of amide I and II absorption bands associated with secondary structures of proteins. Moreover, we demonstrate that plasmonic metasurfaces enhance the chemical contrast in infrared images and enable the detection of ultrathin tissue regions that are not otherwise visible to conventional mid-infrared spectral imaging. While we tested our approach on murine brain tissue sections, this chemical imaging method is well-suited for any tissue type, which significantly broadens the potential impacts of our method for both translational research and clinical histopathology.

physics.optics

The interplay of single-particle and collective motions in the low-lying states of $^{21}_\Lambda$Ne with quadrupole-octupole correlations

The beyond mean-field approach for low-lying hypernuclear states is extended by mixing the configurations associated with both single-particle and quadrupole-octupole collective excitations within the generator coordinate method based on a covariant density functional theory. The method is demonstrated in the application to the low-lying states of $^{21}_\Lambda$Ne, where the configurations with the $\Lambda$ hyperon occupying the first ($\Lambda_s$) and second ($\Lambda_p$) lowest-energy states are considered. The results indicate that the positive-parity states are dominated by the $\alpha+^{12}$C+$\alpha+\Lambda_s$ structure. In contrast, the low-lying negative-parity states are dominated by a strong admixture of $\alpha+^{16}$O+$\Lambda_s$ structure and $\alpha+^{12}$C+$\alpha+\Lambda_p$ structure due to the inclusion of octupole correlations. As a result, the low-lying negative-parity states become much lower than what is expected from the previous studies without the mixing, and the electric multipole transition strengths are significantly quenched.

nucl-th

Evidence of cluster dipole states in germanium detectors operating at temperatures below 10 K

By studying charge trapping in germanium (Ge) detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two planar detectors with different impurity levels and types are used in this study. When drifting the localized charge carriers created by $\alpha$ particles from the top surface across a detector under a lower bias voltage, significant charge trapping is observed when compared to operating at a higher bias voltage. The amount of charge trapping shows a strong dependence on the type of charge carriers. Electrons are trapped more than holes in a p-type detector while holes are trapped more than electrons in a n-type detector. When both electrons and holes are drifted simultaneously using the widespread charge carriers created by $\gamma$ rays inside the detector, the amount of charge trapping shows no dependence on the polarity of bias voltage.

physics.ins-det

Development of Planar P-type Point Contact Germanium Detectors for Low-Mass Dark Matter Searches

The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $\sim$0.7 eV requires internal amplification of charge signal. This can be achieved through high electric field which accelerates charge carriers to generate more charge carriers. The minimum electric field required to generate internal charge amplification is derived for different temperatures. A point contact Ge detector provides extremely high electric field in proximity to the point contact. We show the development of a planar point contact detector and its performance. The field distribution is calculated for this planar point contact detector. We demonstrate the required electric field can be achieved with a point contact detector.

physics.ins-det

Implication of the Temperature-Dependent Charge Barrier Height of Amorphous Germanium Contact Detector in Searching for Rare Event Physics

The exploration of germanium (Ge) detectors with amorphous Ge (a-Ge) contacts has drawn attention to the searches for rare-event physics such as dark matter and neutrinoless double-beta decay. The charge barrier height (CBH) of the a-Ge contacts deposited on the detector surface is crucial to suppress the leakage current of the detector in order to achieve la ow-energy detection threshold and high-energy resolution. The temperature-dependent CBH of a-Ge contacts for three Ge detectors is analyzed to study the bulk leakage current (BLC) characteristics. The detectors were fabricated at the University of South Dakota using homegrown crystals. The CBH is determined from the BLC when the detectors are operated in the reverse bias mode with a guard-ring structure, which separates the BLC from the surface leakage current (SLC). The results show that CBH is temperature dependent. The direct relation of the CBH variation to temperature is related to the barrier inhomogeneities created on the interface of a-Ge and crystalline Ge. The inhomogeneities that occur at the interface were analyzed using the Gaussian distribution model for three detectors. The CBH of a-Ge contact is projected to zero temperature. The implication of the CBH at zero temperature is discussed for Ge detectors with a-Ge contacts in searching for rare-event physics.

physics.ins-det

Correcting thermal-emission-induced detector saturation in infrared reflection or transmission spectroscopy

We found that temperature-dependent infrared spectroscopy measurements (i.e., reflectance or transmittance) using a Fourier-transform spectrometer can have substantial errors, especially for elevated sample temperatures and collection using an objective lens (e.g., using an infrared microscope). These errors arise as a result of partial detector saturation due to thermal emission from the measured sample reaching the detector, resulting in nonphysical apparent reduction of reflectance or transmittance with increasing sample temperature. Here, we demonstrate that these temperature-dependent errors can be corrected by implementing several levels of optical attenuation that enable "convergence testing" of the measured reflectance or transmittance as the thermal-emission signal is reduced, or by applying correction factors that can be inferred by looking at the spectral regions where the sample is not expected to have a substantial temperature dependence.

physics.optics

Characterization of High-Purity Germanium Detectors with Amorphous Germanium Contacts in Cryogenic Liquids

For the first time, planar high-purity germanium detectors with thin amorphous germanium contacts were successfully operated directly in liquid nitrogen and liquid argon in a cryostat at the Max-Planck-Institut fuer Physics in Munich. The detectors were fabricated at the Lawrence Berkeley National Laboratory and the University of South Dakota, using crystals grown at the University of South Dakota. They survived long-distance transportation and multiple thermal cycles in both cryogenic liquids and showed reasonable leakage currents and spectroscopic performance. Also discussed are the pros and cons of using thin amorphous semiconductor materials as an alternative contact technology in large-scale germanium experiments searching for physics beyond the Standard Model.

physics.ins-det

Investigation of the Electrical Conduction Mechanisms in P-type Amorphous Germanium (a-Ge) Used as a-Ge Contacts for Ge Detectors

Electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature-dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $2.13^{-0.05}_{+0.07} A^\circ$ to $5.07^{-0.83}_{+2.58}A^\circ$, depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.

physics.ins-det

Characterization of High-Purity Germanium (Ge) Crystals for Developing Novel Ge Detectors

High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the carrier concentration, the Hall mobility, and the electrical resistivity. The reported values have a strong dependence on the size of the ohmic contacts and the geometry of the samples used in conducting the Hall Effect measurements. We conduct a systematic study using four samples cut from the same location in a HPGe crystal made into different sized ohmic contacts or different geometries to study the variation of the measured parameters from the Hall Effect system. The results are compared to the C-V measurements provided by the Ge detector made from the same crystal. We report the systematic errors involved with the Hall Effect system and find a reliable technique that minimizes the systematic error to be only a few percent from the Hall Effect measurements.

physics.ins-det

The Impact of the Charge Barrier Height on Germanium (Ge) Detectors with Amorphous-Ge Contacts for Light Dark Matter Searches

Germanium (Ge) detectors with ability of measuring a single electron-hole (e-h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts to achieve the sensitivity of measuring a single e-h pair, which requires extremely low leakage current. Three Ge detectors with a-Ge contacts are used to study the charge barrier height for blocking electrons and holes. Using the measured bulk leakage current and the D$\ddot{o}$hler-Brodsky model, we obtain the values for charge barrier height and the density of localized energy states near the Fermi energy level for the top and bottom contacts, respectively. We predict that the bulk leakage current is extremely small and can be neglected at helium temperature ($\sim$4 K). Thus, Ge detectors with a-Ge contacts possess the potential to measure a single e-h pair for detecting LDM particles.

physics.ins-det

Impact of Charge Trapping on the Energy Resolution of Ge Detectors for Rare-Event Physics Searches

Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trapping length is derived from the Shockley-Ramo theorem. Furthermore, we develop a model that correlates the energy resolution with the charge collection efficiency. This model is then applied to the experimental data. As a result, charge collection efficiency and charge trapping length are determined accordingly. Utilizing the Lax model (further developed by CDMS collaborators), the absolute impurity levels are determined for nine detectors. The knowledge of these parameters when combined with other traits such as the Fano factor serve as a reliable indicator of the intrinsic nature of charge trapping within the crystals. We demonstrate that electron trapping is more severe than hole trapping in a p-type detector and the charge collection efficiency depends on the absolute impurity level of the Ge crystal when an adequate bias voltage is applied to the detector. Negligible charge trapping is found when the absolute impurity level is less than 1.0$\times$10$^{11}/$cm$^{3}$ for collecting electrons and 2.0$\times$10$^{11}/$cm$^{3}$ for collecting holes.

physics.ins-det

Beyond mean-field approach for pear-shaped hypernuclei

We develop both relativistic mean field and beyond approaches for hypernuclei with possible quadrupole-octupole deformation or pear-like shapes based on relativistic point-coupling energy density functionals. The symmetries broken in the mean-field states are recovered with parity, particle-number, and angular momentum projections. We take $^{21}_\Lambda$Ne as an example to illustrate the method, where the $\Lambda$ hyperon is put on one of the two lowest-energy orbits (labeled as $\Lambda_s, \Lambda_p$), respectively. We find that the $\Lambda$ hyperon in both cases disfavors the formation of a reflection-asymmetric molecular-like $^{16}$O$+\alpha$ structure in $^{20}$Ne, which is consistent with the Nilsson diagram for the hyperon in $(\beta_2, \beta_3)$ deformation plane. In particular, we show that the negative-parity states with the configuration $^{20}$Ne($K^\pi=0^-)\otimes \Lambda_s$ are close in energy to those with the configuration $^{20}$Ne($K^\pi=0^+)\otimes \Lambda_p$, even though they have very different structures. The $\Lambda_s$ ($\Lambda_p$) becomes more and more concentrated around the bottom (top) of the "pear" with the increase of octupole deformation.

nucl-th

Fabrication and Characterization of High-Purity Germanium Detectors with Amorphous Germanium Contacts

Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless double-beta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We verify that the quality of the grown crystals is sufficient for use in large detectors by fabricating and characterizing smaller HPGe detectors made from those crystals. We report the results from eight detectors fabricated over six months using crystals grown at USD. Amorphous germanium (a-Ge) contacts are used for blocking both electrons and holes. Two types of geometry were used to fabricate HPGe detectors. As a result, the fabrication process of small planar detectors at USD is discussed in great detail. The impact of the procedure and geometry on the detector performance was analyzed for eight detectors. We characterized the detectors by measuring the leakage current, capacitance, and energy resolution at 662 keV with a Cs-137 source. Four detectors show good performance, which indicates that crystals grown at USD are suitable for making HPGe detectors.

physics.ins-det

Investigation of Amorphous Germanium Contact Properties with Planar Detectors Made from Home-Grown Germanium Crystals

The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota (USD). In the fabrication process, a HPGe crystal slice cut from a USD-grown crystal was coated with a high resistivity thin film of amorphous Ge (a-Ge) followed by depositing a thin layer of aluminum on top of the a-Ge film to define the physical area of the contacts. We investigated the detector performance including the $I$-$V$ characteristics, $C$-$V$ characteristics and spectroscopy measurements for a few detectors. The results document the good quality of the USD-grown crystals and electrical contacts.

physics.ins-det

Relativistic Mean-Field and Beyond Approaches for Deformed Hypernuclei

We report the recent progress in relativistic mean-field (RMF) and beyond approaches for the low-energy structure of deformed hypernuclei. We show that the $\Lambda$ hyperon with orbital angular momentum $\ell=0$ (or $\ell>1$) generally reduces (enhances) nuclear quadrupole collectivity. The beyond mean-field studies of hypernuclear low-lying states demonstrate that there is generally a large configuration mixing between the two components $[^{A-1}Z (I^+) \otimes \Lambda p_{1/2}]^J$ and $[^{A-1}Z (I\pm2 ^+) \otimes \Lambda p_{3/2}]^J$ in the hypernuclear $1/2^-_1, 3/2^-_1$ states. The mixing weight increases as the collective correlation of nuclear core becomes stronger. Finally, we show how the energies of hypernuclear low-lying states are sensitive to parameters in the effective $N \Lambda $ interaction, the uncertainty of which has a large impact on the predicted maximal mass of neutron stars.

nucl-th

Disappearance of nuclear deformation in hypernuclei: a perspective from a beyond-mean-field study

The previous mean-field calculation [Myaing Thi Win and K. Hagino, Phys. Rev. C{\bf 78}, 054311 (2008)] has shown that the oblate deformation in $^{28,30,32}$Si disappears when a $\Lambda$ particle is added to these nuclei. We here investigate this phenomenon by taking into account the effects beyond the mean-field approximation. To this end, we employ the microscopic particle-rotor model based on the covariant density functional theory. We show that the deformation of $^{30}$Si does not completely disappear, even though it is somewhat reduced, after a $\Lambda$ particle is added if the beyond-mean-field effect is taken into account. We also discuss the impurity effect of $\Lambda$ particle on the electric quadrupole transition, and show that an addition of a $\Lambda$ particle leads to a reduction in the $B(E2)$ value, as a consequence of the reduction in the deformation parameter.

nucl-th