arXiv subjects

H. Q. Xu

Publications and source records attributed to H. Q. Xu.

At least 37 records · Page 2Linked to original sources

arXiv2023

Scattering description of edge states in Aharonov-Bohm triangle chains

Scattering theory has been suggested as a convenient method to identify topological phases of matter, in particular of disordered systems for which the Bloch band-theory approach is inapplicable. Here we examine this idea, employing as a benchmark a one-dimensional triangle chain whose versatility yields a scattering matrix that ``flows" in parameter space among several members of the topology classification scheme. Our results show that the reflection amplitudes (from both ends of a sufficiently long chain) do indicate the appearance of edge states in {\it all} (topological and non-topological) cases. For the topological cases, the transmission has a peak at the topological phase transition, which happens at the Fermi energy. A peak still exists as one moves into the non-topological `trivial' regions, in which another transmission peak may occur at nonzero energy, at which a relevant edge state appears in the isolated chain. For finite chains, the peak in the transmission strongly depends on their coupling of the leads, and {\it not} on the phase transition of the isolated chain. In any case, {\it the appearance of a peak in the transmission is not sufficient to conclude that the system undergoes a topological phase transition.}

cond-mat.mes-hall↗

arXiv2023

Topological phase transition in a narrow bandgap semiconductor nanolayer

Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite to achieve the topological phase transition in these nanostructures is application of a magnetic field, which could complicate the technology development towards topological quantum computing. Here we demonstrate that a topological phase transition can be achieved in a narrow bandgap semiconductor nanolayer under application of a perpendicular electric field. Based on full band structure calculations, it is shown that the topological phase transition occurs at an electric-field induced band inversion and is accompanied by a sharp change of the $\mathbb{Z}_{2}$ invariant at the critical field. We also demonstrate that the nontrivial topological phase is manifested by the quantum spin Hall edge states in a band-inverted nanolayer Hall-bar structure. We present the phase diagram of the nanolayer in the space of layer thickness and electric field strength, and discuss the optimal conditions to achieve a large topological bandgap in the electric-field induced topological phase of a semiconductor nanolayer.

cond-mat.mes-hall↗

arXiv2023

Strain effects in twisted spiral antimonene

van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures and a tremendous variation in their physical properties can be deduced from a tiny change in inter-layer spacing, twist angle, or in-plane strain. In this work, a kind of vdW layered material of spiral antimonene is constructed, and the strain effects in the material are studied. The spiral antimonene is grown on a germanium (Ge) substrate and is induced by a helical dislocation penetrating through few-atomic-layers of antimonene (\b{eta}-phase). The as-grown spiral is intrinsically strained and the lattice distortion is found to be pinned around the dislocation. Both spontaneous inter-layer twist and in-plane anisotropic strain are observed in scanning tunneling microscope (STM) measurements. The strain in the spiral antimonene can be significantly modified by STM tip interaction, leading to a variation in the surface electronic density of states (DOS) and a large modification in the work function of up to a few hundreds of milli-electron-volts (meV). Those strain effects are expected to have potential applications in building up novel piezoelectric devices.

cond-mat.mtrl-sci↗

arXiv2023

Spin-Orbit Interaction Enabled High-Fidelity Two-Qubit Gates

We study the implications of spin-orbit interaction (SOI) for two-qubit gates (TQGs) in semiconductor spin qubit platforms. SOI renders the exchange interaction governing qubit pairs anisotropic, posing a serious challenge for conventional TQGs derived for the isotropic Heisenberg exchange. Starting from microscopic level, we develop a concise computational Hamiltonian that captures the essence of SOI, and use it to derive properties of the rotating-frame time evolutions. Two key findings are made. First, for the controlled-phase/controlled-Z gate, we show and analytically prove the existence of ``SOI nodes'' where the fidelity can be optimally enhanced, with only slight modifications in terms of gate time and local phase corrections. Second, we discover and discuss novel two-qubit dynamics that are inaccessible without SOI -- the reflection gate and the direct controlled-not gate. The relevant conditions and achievable fidelities are studied for the direct controlled-not gate.

cond-mat.mes-hall↗

arXiv2023

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due to their unique properties including strong spin-orbit couplings, large Landé g-factors and the two dimensional nature. Here, we report an experimental study of proximity induced superconductivity in planar Josephson junction devices made from free-standing InAs nanosheets. The nanosheets are grown by molecular beam epitaxy and the Josephson junction devices are fabricated by directly contacting the nanosheets with superconductor Al electrodes. The fabricated devices are explored by low-temperature carrier transport measurements. The measurements show that the devices exhibit a gate-tunable supercurrent, multiple Andreev reflections, and a good quality superconductor-semiconductor interface. The superconducting characteristics of the Josephson junctions are investigated at different magnetic fields and temperatures, and are analyzed based on the Bardeen-Cooper-Schrieffer (BCS) theory. The measurements of ac Josephson effect are also conducted under microwave radiations with different radiation powers and frequencies, and integer Shapiro steps are observed. Our work demonstrates that InAs nanosheet based hybrid devices are desired systems for investigating forefront physics, such as the two-dimensional topological superconductivity.

cond-mat.mes-hall↗

arXiv2023

Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor

A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the few-electron regime by direct transport measurements and by charge-sensor detection measurements. The measurements of the charge stability diagram for a capacitively coupled, parallel double-QD formed from a QD in the TQD and the sensor QD show a visible capacitance coupling between the TQD and the sensor QD, indicating a good sensitivity of the charge sensor. The charge stability diagrams of the TQD are measured by the charge sensor and the global features seen in the measured charge stability diagrams are well reproduced by the simultaneous measurements of the direct transport current through the TQD and by the simulation made based on an effective capacitance network model. The complex charge stability diagrams of the TQD are measured in detail with the integrated charge sensor in an energetically degenerate region, where all the three QDs are on or nearly on resonance, and the formations of quadruple points and of all possible eight charge states are observed. In addition, the operation of the TQD as a quantum cellular automata is demonstrated and discussed.

cond-mat.mes-hall↗

arXiv2022

Electrically tunable spin-orbit interaction in an InAs nanosheet

We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the carrier density in the nanosheet and the potential difference across the nanosheet can be efficiently achieved with use of the dual gate. The quantum transport characteristics of the InAs nanosheet are investigated by magnetoconductance measurements at low temperatures. It is shown that the electron transport in the nanosheet can be tuned from the weak antilocalization to the weak localization and then back to the weak antilocalization regime with a voltage applied over the dual gate without a change in carrier density. The spin-orbit length extracted from the magnetoconductance measurements at a constant carrier density exhibits a peak value at which the SOI of the Rashba type is suppressed and the spin relaxation due to the presence of an SOI of the Dresselhaus type in the nanosheet can be revealed. Energy band diagram simulations have also been carried out for the device at the experimental conditions and the physical insights into the experimental observations have been discussed in light of the results of simulations.

cond-mat.mes-hall↗

arXiv2022

Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet

A thin, narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet is obtained via mechanical exfoliation and a Hall-bar device is fabricated from it on a heavily doped Si/SiO$_2$ substrate and studied at low temperatures. Gate transfer characteristic measurements show that the transport carriers in the nanosheet are of $n$-type. The carrier density, mobility, and mean free path in the nanosheet are determined by measurements of the Hall resistance and the longitudinal resistance of the Hall-bar device and it is found that the electron transport in the nanosheet is in a quasi-two-dimensional (2D), strongly disordered regime. Magnetotransport measurements for the device at magnetic fields applied perpendicular to the nanosheet plane show dominantly weak antilocalization (WAL) characteristics at low fields and a linear magnetoresistance (LMR) behavior at large fields. We attribute the WAL characteristics to strong spin-orbit interaction (SOI) and the LMR to the classical origin of strong disorder in the nanosheet. Low-field magnetoconductivity measurements are also performed and are analyzed based on the multi-channel Hikami-Larkin-Nagaoka theory with the LMR correction being taken into account. The phase coherence length, spin relaxation length, effective 2D conduction channel number and coefficient in the linear term due to the LMR in the nanosheet are extracted. It is found that the spin relaxation length in the Bi$_2$O$_2$Te nanosheet is several times smaller than it in its counterpart Bi$_2$O$_2$Se nanosheet and thus an ultra-strong SOI is present in the Bi$_2$O$_2$Te nanosheet. Our results reported in this study would greatly encourage further studies and applications of this emerging narrow-bandgap semiconductor 2D material.

cond-mat.mes-hall↗

arXiv2022

Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices

Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices are epitaxially grown, free-standing, zincblende crystals and are in micrometer lateral sizes. The hBN and graphite flakes are obtained by exfoliation. Each trilayer is made by successively stacking an InSb nanosheet on an hBN flake and on a graphite flake using a home-made alignment stacking/transfer setup. The fabricated single- and double-gate devices are characterized by electrical and/or magnetotransport measurements. In all these devices, the graphite and hBN flakes are employed as the bottom gates and the gate dielectrics. The measurements of a fabricated single bottom-gate field-effect device show that the InSb nanosheet in the device has an electron field-effect mobility of ~7300 cm$^2$V$^{-1}$s$^{-1}$ and a low gate hysteresis of ~0.05 V at 1.9 K. The measurements of a double-gate Hall-bar device show that both the top and the bottom gate exhibit strong capacitive couplings to the InSb nanosheet channel and can thus tune the nanosheet channel conduction effectively. The electron Hall mobility in the InSb nanosheet of the Hall-bar device is extracted to be larger than 1.1$\times$10$^4$ cm$^2$V$^{-1}$s$^{-1}$ at a sheet electron density of ~6.1$\times$10$^{11}$ cm$^{-2}$ and 1.9 K and, thus, the device exhibits well-defined Shubnikov-de Haas oscillations.

cond-mat.mes-hall↗

arXiv2022

Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet

A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding ~18000 cm$^2$V$^{-1}$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass m$^*$$\sim$0.028 m$_0$ and the quantum lifetime $τ$$\sim$0.046 ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.

cond-mat.mes-hall↗

arXiv2022

Surface-bulk coupling in a Bi$_2$Te$_3$ nanoplate grown by van der Waals epitaxy

We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator Bi$_2$Te$_3$ nanoplate. The nanoplate is grown via van der Waals epitaxy on a mica substrate and a top-gated Hall-bar device is fabricated from the nanoplate directly on the growth substrate. Top-gate voltage dependent measurements of the sheet resistance of the device reveal that the transport carriers in the nanoplate are of n-type and that, with decreasing top gate voltage, the carrier density in the nanoplate is decreased. However, the mobility is increased with decreasing top-gate voltage. This mobility increase with decreasing carrier density in the nanoplate is demonstrated to arise from a decrease in bulk-to-surface electron scattering rate. Low-field magnetotransport measurements are performed at low temperatures. The measured magnetoconductivity of the nanoplate shows typical weak anti-localization (WAL) characteristics. We analyze the measurements by taking surface-bulk inter-channel electron scattering into account and extract dephasing times $τ_ϕ$, diffusion coefficients $D$ of electrons at the top surface and in the bulk, and the surface-bulk scattering times $τ_{SB}$ as a function of top-gate voltage and temperature. It is found that the dephasing in the nanoplate arises dominantly from electron-electron scattering with small energy transfers. It is also found that the ratio of $τ_ϕ$/$τ_{SB}$ (a measure of the surface-bulk electron coherent coupling) is decreased with decreasing gate voltage or increasing temperature. We demonstrate that taking the surface-bulk coherent electron scattering in our Bi$_2$Te$_3$ nanoplate into account is essential to understand quantum transport measurements at low temperatures.

cond-mat.mes-hall↗

arXiv2021

A Study on Correcting the Effect of Polarization Crosstalk in Full-Disk Solar Photospheric Magnetic Fields Observations

Magnetography using magnetic sensitive lines is regarded traditionally as the main instrument for measuring the magnetic field of the whole Sun. Full polarized Stockes parameters ($I$, $Q$, $U$, $V$) observed can be used to deduce the magnetic field under specific theoretical model or inversion algorithms. Due to various reasons, there are often cross-talk effects among Stokes signals observed directly by magnetographs. Especially, the circular polarized signal $V$ usually affects the linear polarized ones $Q$ and $U$ seriously, which is one of the main errors of the value of the transverse magnetic field (parallel to the solar surface) that is related to $Q$ and $U$. The full-disk magnetograph onboard the Advanced Space based Solar Observatory (ASO-S/FMG) is designed to observe Stockes parameters to deduce the vector magnetic field. In this paper, the methods correcting the effects of cross-talk $V$ to $Q$ and $U$ are based on the assumption of perfectly symmetric Q and U and anti-symmetric Stokes V profiles and a new method to reduce the crosstalk effect under observation mode of FMG is developed. Through the test, it is found that the two methods have better effect in cross-talk removal in the sunspot region, and have better consistency. Addtionally, the developed methodcan be applied to remove the cross-talk effect using only one group of $Q$, $U$ and $V$ images observed at one wavelength position.

astro-ph.SR↗

arXiv2021

Topological charge and spin pumping in a semiconductor nanowire

The adiabatic topological pumping is proposed by periodically modulating a semiconductor nanowire double-quantum-dot chain. We demonstrate that the quantized charge transport can be achieved by a nontrivial modulation of the quantum-dot well and barrier potentials. When the quantum-dot well potential is replaced by a time-dependent staggered magnetic field, the topological spin pumping can be realized by periodically modulating the barrier potentials and magnetic field. We also demonstrate that in the presence of Rashba spin-orbit interaction, the double-quantum-dot chain can be used to implement the topological spin pumping. However, the pumped spin in this case can have a quantization axis other than the applied magnetic field direction. Moreover, we show that all the adiabatic topological pumping are manifested by the presence of gapless edge states traversing the band gap as a function of time.

cond-mat.mes-hall↗

arXiv2021

Topological states and interplay between spin-orbit and Zeeman interactions in a spinful Su-Schrieffer-Heeger nanowire

The interplay between the spin-orbit and Zeeman interactions acting on a spinful Su-Schrieffer-Heeger model is studied based on an InAs nanowire subjected to a periodic gate potential along the axial direction. It is shown that a nontrivial topological phase can be achieved by regulating the confining-potential configuration. In the absence of the Zeeman field, we prove that the topology of the chain is not affected by the Rashba spin-orbit interaction due to the persisting chiral symmetry. The energies of the edge modes can be manipulated by varying the magnitude and direction of the external magnetic field. Remarkably, the joint effect of the two spin-related interactions leads to novel edge states that appear in the gap formed by the anti-crossing of the bands of a finite spinful dimerized chain, and can be merged into the bulk states by tilting the magnetic-field direction.

cond-mat.mes-hall↗

arXiv2021

Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages

We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to detect the charge state transition in the other QD (target QD). We investigate the effect of the tunneling barrier asymmetry of the target QD on the detection visibility of charge state transition in the target QD. The charge stability diagrams of the target QD under different configurations of barrier-gate voltages are simultaneously measured via the direct signals of electron transport through the target QD and via the detection signals of charge state transition in the target QD from the sensor QD. We find that the complete Coulomb diamond boundaries of the target QD and the transport processes involving the excited states in the target QD can be observed in the transconductance signals of the sensor QD only when the tunneling barriers of the target QD are nearly symmetric. These phenomena are explained by analyzing the effect of the ratio of the two tunneling rates on the electron transport processes through the target QD. Our results imply that it is important to consider the symmetry of the tunneling couplings when constructing a charge sensor integrated QD device or qubit.

cond-mat.mes-hall↗

arXiv2021

A double quantum dot defined by top gates in a single crystalline InSb nanosheet

We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for developments of quantum computation and quantum simulation technologies.

cond-mat.mes-hall↗

arXiv2021

Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire

Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to the standard semiconductor chip fabrication technology. However, development of a highly tunable semiconductor multiple QD system still remains as a major challenge. Here, we demonstrate realization of a highly tunable linear quadruple QD (QQD) in a narrow bandgap semiconductor InAs nanowire with fine finger gate technique. The QQD is studied by electron transport measurements in the linear response regime. Characteristic two-dimensional charge stability diagrams containing four groups of resonant current lines of different slopes are found for the QQD. It is shown that these current lines can be individually assigned as arising from resonant electron transport through the energy levels of different QDs. Benefited from the excellent gate tunability, we also demonstrate tuning of the QQD to regimes where the energy levels of two QDs, three QDs and all the four QDs are energetically on resonance, respectively, with the fermi level of source and drain contacts. A capacitance network model is developed for the linear QQD and the simulated charge stability diagrams based on the model show good agreements with the experiments. Our work presents a solid experimental evidence that narrow bandgap semiconductor nanowires multiple QDs could be used as a versatile platform to achieve integrated qubits for quantum computing and to perform quantum simulations for complex many-body systems.

cond-mat.mes-hall↗

arXiv2020

Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet

A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices and topological quantum devices.

cond-mat.mes-hall↗