arXiv subjects

H. Y. Hwang

Publications and source records attributed to H. Y. Hwang.

51 records · Page 3Linked to original sources

arXiv2008

Negative Differential Resistance Induced by Mn Substitution at SrRuO3/Nb:SrTiO3 Schottky Interfaces

We observed a strong modulation in the current-voltage characteristics of SrRuO$_3$/Nb:SrTiO$_3$ Schottky junctions by Mn substitution in SrRuO$_3$, which induces a metal-insulator transition in bulk. The temperature dependence of the junction ideality factor indicates an increased spatial inhomogeneity of the interface potential with substitution. Furthermore, negative differential resistance was observed at low temperatures, indicating the formation of a resonant state by Mn substitution. By spatially varying the position of the Mn dopants across the interface with single unit cell control, we can isolate the origin of this resonant state to the interface SrRuO$_3$ layer. These results demonstrate a conceptually different approach to controlling interface states by utilizing the highly sensitive response of conducting perovskites to impurities.

cond-mat.str-el↗

arXiv2008

Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped SrTiO3

We have investigated the extreme quantum limit of photogenerated electrons in quantum paraelectric SrTiO3. This regime is distinct from conventional semiconductors, due to the large electron effective mass and large lattice dielectric constant. At low temperature, the magnetoresistance and Hall resistivity saturate at high magnetic field, deviating from conventional behavior. As a result, the Hall coefficient vanishes on the scale of the ratio of the Landau level splitting to the thermal energy, indicating the essential role of lowest Landau level occupancy, as limited by thermal broadening.

cond-mat.str-el↗

arXiv2007

Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface

We have investigated the transport properties of LaVO_3/SrTiO_3 Mott insulator/band insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_2/LaO/TiO_2 polar discontinuity is conducting, exhibiting a LaVO_3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO_2/SrO/TiO_2 interface, formed by inserting a single layer of bulk metallic SrVO_3 or SrO, drives the interface insulating. The (110) heterointerface is also insulating, indicating interface conduction arising from electronic reconstructions.

cond-mat.str-el↗

arXiv2007

Temperature Dependent Polarity Reversal in Au/Nb:SrTiO3 Schottky Junctions

We have observed temperature-dependent reversal of the rectifying polarity in Au/Nb:SrTiO3 Schottky junctions. By simulating current-voltage characteristics we have found that the permittivity of SrTiO3 near the interface exhibits temperature dependence opposite to that observed in the bulk, significantly reducing the barrier width. At low temperature, tunneling current dominates the junction transport due both to such barrier narrowing and to suppressed thermal excitations. The present results demonstrate that novel junction properties can be induced by the interface permittivity.

cond-mat.str-el↗

arXiv2007

Optically tuned dimensionality crossover in photocarrier-doped SrTiO$_3$: onset of weak localization

We report magnetotransport properties of photogenerated electrons in undoped SrTiO$_3$ single crystals under ultraviolet illumination down to 2 K. By tuning the light intensity, the steady state carrier density can be controlled, while tuning the wavelength controls the effective electronic thickness by modulating the optical penetration depth. At short wavelengths, when the sheet conductance is close to the two-dimensional Mott minimum conductivity we have observed critical behavior characteristic of weak localization. Negative magnetoresistance at low magnetic field is highly anisotropic, indicating quasi-two-dimensional electronic transport. The high mobility of photogenerated electrons in SrTiO$_3$ allows continuous tuning of the effective electronic dimensionality by photoexcitation.

cond-mat.str-el↗

arXiv2007

Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers

We have studied the electronic structure of multilayers composed of a band insulator LaAlO$_3$ (LAO) and a Mott insulator LaVO$_3$ (LVO) by means of hard x-ray photoemission spectroscopy, which has a probing depth as large as $\sim 60 Å$. The Mott-Hubbard gap of LVO remained open at the interface, indicating that the interface is insulating unlike the LaTiO$_3$/SrTiO$_3$ multilayers. We found that the valence of V in LVO were partially converted from V$^{3+}$ to V$^{4+}$ only at the interface on the top side of the LVO layer and that the amount of V$^{4+}$ increased with LVO layer thickness. We suggest that the electronic reconstruction to eliminate the polarity catastrophe inherent in the polar heterostructure is the origin of the highly asymmetric valence change at the LVO/LAO interfaces.

cond-mat.str-el↗

arXiv2007

Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions

Internal photoemission spectroscopy was used to determine the Schottky barrier height in rectifying SrRuO3/Nb-doped SrTiO3 junctions for 0.01 wt % and 0.5 wt % Nb concentrations. Good agreement was obtained with the barrier height deduced from capacitance-voltage measurements, provided that a model of the nonlinear permittivity of SrTiO3 was incorporated in extrapolating the built-in potential, particularly for high Nb concentrations. Given the generic polarizability of perovskites under internal/external electric fields, internal photoemission provides a valuable independent probe of the interface electronic structure.

cond-mat.str-el↗

arXiv2007

Nanometer scale electronic reconstruction at the interface between LaVO3 and LaVO4

Electrons at interfaces, driven to minimize their free energy, are distributed differently than in bulk. This can be dramatic at interfaces involving heterovalent compounds. Here we profile an abrupt interface between V 3d2 LaVO3 and V 3d0 LaVO4 using electron energy loss spectroscopy. Although no bulk phase of LaVOx with a V 3d1 configuration exists, we find a nanometer-wide region of V 3d1 at the LaVO3/LaVO4 interface, rather than a mixture of V 3d0 and V 3d2. The two-dimensional sheet of 3d1 electrons is a prototypical electronic reconstruction at an interface between competing ground states.

cond-mat.str-el↗

arXiv2006

Interface Magnetoresistance in Manganite-Titanate Heterojunctions

We have found that the current- voltage characteristics of La0.7Sr0.3MnO3(-delta)/Nb:SrTiO3 rectifying junctions are quantitatively well-described by (thermally-assisted) tunneling with an effectively temperature-independent Schottky barrier under no magnetic field, while those of the oxygen deficient junction remarkably deviate from such a simple behavior as magnetic field is applied. These results indicate a new form of magnetoresistance arising from magnetic field changes of the interface band diagram via the strong electron-spin coupling in manganites.

cond-mat.str-el↗

arXiv2006

Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

We used x-ray photoemission spectroscopy to investigate the electronic structure of the Mott insulator LaVO3 embedded in LaAlO3. By limiting the upper layer of LaAlO3 to 3 unit cells, the underlying LaVO3 could be probed. The V 2p core-level spectra had both V3+ and V4+ components, and above 2 unit cell thick LaVO3, the structures exhibited spectra similar to bulk samples. The atomically flat surfaces enabled study of the emission angle dependence, which indicates the V4+ is localized to the topmost layer. These results demonstrate the potential for probing interface electronic structure in oxide ultrathin films by surface spectroscopy.

cond-mat.mtrl-sci↗

arXiv2006

Lattice polarization effects on electron-gas charge densities in ionic superlattices

The atomic-level control achievable in artificially-structured oxide superlattices provides a unique opportunity to explore interface phases of matter including high-density 2D electron gases. Electronic-structure calculations show that the charge distribution of the 2D gas is strongly modulated by electron-phonon interactions with significant ionic polarization. Anharmonic finite-temperature effects must be included to reproduce experiment. Density functional perturbation theory is used to parameterize a simple model introduced to represent these effects and predict temperature dependencies.

cond-mat.mtrl-sci↗

arXiv2004

Magnetocapacitance and exponential magnetoresistance in manganite-titanate heterojunctions

We present a rectifying manganite-titanate heterojunction exhibiting a magnetic field tunable depletion layer. This creates a large positive magnetocapacitance, a direct measure of the field-induced reduction of the effective depletion width across the junction. Furthermore, the reduction of the junction barrier shifts the forward bias characteristics, giving exponentially-enhanced differential magnetoresistance, occurring despite the absence of a spin filter. These results provide a unique probe of a Mott insulator/band insulator interface, and further suggest new electronic devices incorporating the magnetic field sensitivity of these strongly correlated electron materials.

cond-mat.str-el↗

arXiv1999

Magnon Damping by magnon-phonon coupling in Manganese Perovskites

Inelastic neutron scattering was used to systematically investigate the spin-wave excitations (magnons) in ferromagnetic manganese perovskites. In spite of the large differences in the Curie temperatures ($T_C$s) of different manganites, their low-temperature spin waves were found to have very similar dispersions with the zone boundary magnon softening. From the wavevector dependence of the magnon lifetime effects and its correlation with the dispersions of the optical phonon modes, we argue that a strong magneto-elastic coupling is responsible for the observed low temperature anomalous spin dynamical behavior of the manganites.

cond-mat.str-el↗

arXiv1997

Softening and Broadening of the Zone Boundary Magnons in Pr0.63Sr0.37MnO3

We have studied the spin dynamics in Pr$_{0.63}$Sr$_{0.37}$MnO$_3$ above and below the Curie temperature $T_C=301$ K. Three distinct new features have been observed: a softening of the magnon dispersion at the zone boundary for $T<T_C$, significant broadening of the zone boundary magnons as $T\to T_C$, and no evidence for residual spin-wave like excitations just above $T_C$. The results are inconsistent with double exchange models that have been successfully applied to higher $T_C$ samples, indicating an evolution of the spin system with decreasing $T_C$.

cond-mat.str-el↗

arXiv1997

Evolution of the low-frequency spin dynamics in ferromagnetic manganites

Elastic and inelastic neutron scattering was used to study two ferromagnetic manganites A$_{1-x}$B$_{x}$MnO$_3$ (x $\approx$ 0.3) with $T_c$=197.9 K and 300.9 K. The spin dynamical behavior of these is similar at low temperatures, but drastically different at temperatures around $T_c$. While the formation of spin clusters of size ($\sim20$ Å) dominates the spin dynamics of the 197.9 K sample close to $T_c$, the paramagnetic to ferromagnetic transition for the 300.9 K sample is more conventional. These results, combined with seemingly inconsistent earlier reports, reveal clear systematics in the spin dynamics of the manganites.

cond-mat.str-el↗