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Hadas Shtrikman

Publications and source records attributed to Hadas Shtrikman.

51 records · Page 3Linked to original sources
arXiv2001

Temperature dependence of Fano line shapes in a weakly coupled single-electron transistor

We report the temperature dependence of the zero-bias conductance of a single-electron transistor in the regime of weak coupling between the quantum dot and the leads. The Fano line shape, convoluted with thermal broadening, provides a good fit to the observed asymmetric Coulomb charging peaks. However, the width of the peaks increases more rapidly than expected from the thermal broadening of the Fermi distribution in a temperature range for which Fano interference is unaffected. The intrinsic width of the resonance extracted from the fits increases approximately quadratically with temperature. Above about 600 mK the asymmetry of the peaks decreases, suggesting that phase coherence necessary for Fano interference is reduced with increasing temperature.

cond-mat.mes-hall↗
arXiv2001

Inverse melting of the vortex lattice

Inverse melting, in which a crystal reversibly transforms into a liquid or amorphous phase upon decreasing the temperature, is considered to be very rare in nature. The search for such an unusual equilibrium phenomenon is often hampered by the formation of nonequilibrium states which conceal the thermodynamic phase transition, or by intermediate phases, as was recently shown in a polymeric system. Here we report a first-order inverse melting of the magnetic flux line lattice in Bi2Sr2CaCu2O8 superconductor. At low temperatures, the material disorder causes significant pinning of the vortices, which prevents observation of their equilibrium properties. Using a newly introduced 'vortex dithering' technique we were able to equilibrate the vortex lattice. As a result, direct thermodynamic evidence of inverse melting transition is found, at which a disordered vortex phase transforms into an ordered lattice with increasing temperature. Paradoxically, the structurally ordered lattice has larger entropy than the disordered phase. This finding shows that the destruction of the ordered vortex lattice occurs along a unified first-order transition line that gradually changes its character from thermally-induced melting at high temperatures to a disorder-induced transition at low temperatures.

cond-mat.supr-con↗
arXiv2000

Phase Evolution in a Kondo Correlated System

The coherence and phase evolution of electrons in a mesoscopic system in the Kondo correlated regime were studied. The Kondo effect, in turn, is one of the most fundamental many-body effects where a localized spin interacts with conduction electrons in a conductor. Results were obtained by embedding a quantum dot (QD) in a double path electronic interferometer and measuring interference of electron waves. The Phase was found to evolve in a range twice as large as the theoretically predicted one. Moreover, the phase proved to be highly sensitive to the onset of Kondo correlation, thus serving as a new fingerprint of the Kondo effect.

cond-mat.mes-hall↗
arXiv1999

Fano Resonances in Electronic Transport through a Single Electron Transistor

We have observed asymmetric Fano resonances in the conductance of a single electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical of quantum dots, but the origin of the non-resonant path is unclear. A unique feature of this experimental system, compared to others that show Fano line shapes, is that changing the voltages on various gates allows one to alter the interference between the two paths.

cond-mat.mes-hall↗
arXiv1999

Unexpected Behavior of the Local Compressibility Near the B=0 Metal-Insulator Transition

We have measured the local electronic compressibility of a two-dimensional hole gas as it crosses the B=0 Metal-Insulator Transition. In the metallic phase, the compressibility follows the mean-field Hartree-Fock (HF) theory and is found to be spatially homogeneous. In the insulating phase it deviates by more than an order of magnitude from the HF predictions and is spatially inhomogeneous. The crossover density between the two types of behavior, agrees quantitatively with the transport critical density, suggesting that the system undergoes a thermodynamic change at the transition.

cond-mat.mes-hall↗
arXiv1999

From the magnetic-field-driven transitions to the zero-field transition in two-dimensions

For more than a decade it was widely accepted that two-dimensional electrons are insulating at zero temperature and at zero magnetic-field. Experimentally it was demonstrated that, when placed in a strong perpendicular magnetic field, the insulating phase turns into a quantum-Hall state. While this transition was in accordance with existing theoretical models (KLZ), the density driven metal-insulator transition at zero magnetic-field, recently observed in high-quality two-dimensional systems, was unforeseen and, despite considerable amount of effort, its origins are still unknown. In order to improve our understanding of the zero magnetic-field transition, we conducted a study of the insulator to quantum-Hall transition in low-density, two-dimensional, hole system in GaAs that exhibits the zero magnetic-field metal-insulator transition. We found that, in the low field insulating phase, upon increasing the carrier density towards the metal-insulator transition, the critical magnetic-field of the insulator to quantum-Hall transition decreases and converges to the zero magnetic-field metal-insulator transition. This implies a common origin for both the finite magnetic-field and the zero magnetic-field transitions.

cond-mat↗
arXiv1998

Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems

The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical density, p_0c. We also observe that the low-temperature conductivity of these systems depends linearly on the hole density, over a wide density range. The high-density linear conductivity extrapolates to zero at a density close to the critical density.

cond-mat.mes-hall↗
arXiv1998

From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor

We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. When an unpaired electron is localized within the transistor, the Kondo effect is observed. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a cross-over between the Kondo and mixed-valence regimes of the Anderson model.

cond-mat.mes-hall↗
arXiv1998

Possible new vortex matter phases in BSCCO

The vortex matter phase diagram of BSCCO crystals is analyzed by investigating vortex penetration through the surface barrier in the presence of a transport current. The strength of the effective surface barrier, its nonlinearity, and asymmetry are used to identify a possible new ordered phase above the first-order transition. This technique also allows sensitive determination of the depinning temperature. The solid phase below the first-order transition is apparently subdivided into two phases by a vertical line extending from the multicritical point.

cond-mat.supr-con↗
arXiv1997

Where does the transport current flow in Bi2Sr2CaCu2O8 crystals?

A new measurement technique for investigation of vortex dynamics is introduced. The distribution of the transport current across a crystal is derived by a sensitive measurement of the self-induced magnetic field of the transport current. We are able to clearly mark where the flow of the transport current is characterized by bulk pinning, surface barrier, or a uniform current distribution. One of the novel results is that in BSCCO crystals most of the vortex liquid phase is affected by surface barriers resulting in a thermally activated apparent resistivity. As a result the standard transport measurements in BSCCO do not probe the dynamics of vortices in the bulk, but rather measure surface barrier properties.

cond-mat.supr-con↗
arXiv1997

The Metallic-Like Conductivity of a Two-Dimensional Hole System

We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at low-density, to a metallic-like behavior at high-density, where the metallic behavior is characterized by a large drop in the resistivity as the temperature is lowered. These results are in agreement with recent experiments on Si-based two-dimensional systems by Kravchenko et al. and others. We show that, in the metallic region, the resistivity is dominated by an exponential temperature-dependence with a characteristic temperature which is proportional to the hole density, and appear to reach a constant value at lower temperatures.

cond-mat.mes-hall↗
arXiv1997

Kondo Physics in a Single Electron Transistor

The question of how localized electrons interact with delocalized electrons is central to many problems at the forefront of solid state physics. The simplest example is the Kondo phenomenon, which occurs when an impurity atom with an unpaired electron is placed in a metal, and the energy of the unpaired electron is far below the Fermi energy. At low temperatures a spin singlet state is formed between the unpaired localized electron and delocalized electrons at the Fermi energy. The confined droplet of electrons interacting with the leads of a single electron transistor (SET) is closely analogous to an impurity atom interacting with the delocalized electrons in a metal. (Meir, Wingreen and Lee, 1993) We report here measurements on a new generation of SETs that display all the aspects of the Kondo phenomenon: the spin singlet forms and causes an enhancement of the zero-bias conductance when the number of electrons on the artificial atom is odd but not when it is even. The singlet is altered by applying a voltage or magnetic field or by increasing the temperature, all in ways that agree with predictions. (Wingreen and Meir 1994)

cond-mat.str-el↗
arXiv1997

Observation of the logarithmic dispersion of high frequency edge excitations

We report phase sensitive measurements of microwave propagation through a high mobility two dimensional electron gas subjected to a perpendicular magnetic field. Two types of configurations were used, one that allows all wave vectors q, and one that selects only specific q values. The spectrum of edge excitations was studied over a broad frequency span, which allowed us to observe the logarithmic dispersion of edge magneto-plasmons.

cond-mat↗
arXiv1996

Inductive Probing of the Integer Quantum Hall Effect

We investigated the Integer Quantum Hall Effect (IQHE) using an inductive method. The following conclusions can be derived from our study: (i) when the Fermi energy is located between Landau levels the only extended states at the Fermi energy are located at the physical edges of the sample. (ii) the extended states located at the bulk of the sample below the Fermi energy are capable of carrying a substantial amount of Hall current, but cannot screen an external electrostatic potential.

cond-mat↗