arXiv subjects

Hai-Ou Li

Publications and source records attributed to Hai-Ou Li.

At least 19 recordsLinked to original sources

arXiv2026

Phonon-assisted transport and hole-phonon coupling in GaAs double quantum dots

Hole-phonon interactions play an important role in transport and decoherence processes in semiconductor quantum dots. Here we investigate hole-phonon coupling in a gate-defined GaAs double quantum dot integrated with a quantum point contact charge sensor. Under finite source-drain bias, pronounced oscillatory stripe patterns appear near specific charge transition regions in the charge stability diagram. We attribute these oscillations to phonon emission during inelastic interdot tunneling. A theoretical model including piezoelectric hole-phonon coupling reproduces the observed patterns. Furthermore, our analysis shows that the oscillations emerge only in particular charge configurations. Our results provide direct insight into phonon-assisted transport and coherent hole-phonon interactions in semiconductor quantum dots.

cond-mat.mes-hall↗

arXiv2026

On-chip Parametric Amplification in a Double Quantum Dots Circuit

In microwave-based quantum circuits, including double quantum dots (DQDs), superconducting qubits and spin qubits, parametric amplifiers are indispensable in achieving high-fidelity qubit readouts. Despite its importance, the application of parametric amplifiers is hampered by several challenges, such as high insertion losses, constrained tunability, and a pronounced vulnerability to magnetic fields. Here, we demonstrate an on-site single-atom parametric amplifier (SAPA) within a reconfigurable quantum circuit, which consists of a superconducting microwave cavity and two GaAs gate-defined DQDs. Leveraging the inherent nonlinearity of the DQD, a parametric gain exceeding 11 dB is achieved. This gain contributes to enhance the qubit readout, as evidenced by exceeding two times improvement in the signal-to-noise ratio (SNR) when employing the DQD-based amplifier for reading out another DQD. Our work not only presents a versatile experimental platform with enhanced readout capabilities in quantum computing, but also introduces alternative choices of parametric amplifiers for a variety of microwave-based quantum circuits.

quant-ph↗

arXiv2026

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures

Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate interface-state trapping using Hall-bar field-effect transistors fabricated on strained Ge/SiGe heterostructures. Combining transport measurements with long-term stabilization and Schrödinger-Poisson modelling, we reconstruct the gradual filling process of interface states at cryogenic condition. Using the calculated valence band profiles, we further evaluate the tunneling current density between the quantum well and the semiconductor-oxide interface. Our calculation demonstrates that the total tunneling current is consistent with a crossover from trap-assisted-tunneling-dominated transport to Fowler-Nordheim-tunneling-dominated transport under different gate bias regimes. These results refine the conventional Fowler-Nordheim-based picture of interface trapping in strained Ge/SiGe heterostructures and provide guidelines for improving Ge-based quantum device performance by improving barrier crystalline qualities and reducing dislocation-related trap densities.

cond-mat.mes-hall↗

arXiv2024

Revealing spin-flip two-level systems using ultra-thin film superconducting resonators

Material disorders are one of the major sources of noise and loss in solid-state quantum devices, whose behaviors are often modeled as two-level systems (TLSs) formed by charge tunneling between neighboring sites. However, the role of their spins in tunneling and its impact on device performance remain highly unexplored. In this work, employing ultra-thin TiN superconducting resonators, we reveal anomalous TLS behaviors by demonstrating an unexpected increase in resonant frequency at low magnetic fields. Furthermore, a spin-flip TLS model is proposed, in which an effective spin-orbit coupling is generated by inhomogeneous local magnetic fields from defect spins. This mechanism mixes charge tunnelings and spin flips, quantitatively reproducing the observed frequency-field relationship and its temperature dependence. This work deepens the understanding of spin-dependent TLS behaviors, offering the possibility of magnetically engineering noise and loss in solid-state quantum devices.

cond-mat.mes-hall↗

arXiv2024

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as the primary material platform for spin hole qubits.A low disorder material environment is essential for this process. In this work, we fabricated a Ge/SiGe heterojunction with a 60 nm buried quantum well layer on a Si substrate using reduced pressure chemical vapor deposition technology. At a temperature of 16 mK, when the carrier density is 1.87*10^11/cm2, we obtained a mobility as high as 308.64*10^4cm2/Vs. Concurrently, double quantum dot and planar germanium coupling with microwave cavities were also successfully achieved.This fully demonstrates that this structure can be used for the preparation of higher-performance hole spin qubits.

cond-mat.mes-hall↗

arXiv2024

Highly tunable 2D silicon quantum dot array with coupling beyond nearest neighbors

Scaling up quantum dots to two-dimensional (2D) arrays is a crucial step for advancing semiconductor quantum computation. However, maintaining excellent tunability of quantum dot parameters, including both nearest-neighbor and next-nearest-neighbor couplings, during 2D scaling is challenging, particularly for silicon quantum dots due to their relatively small size. Here, we present a highly controllable and interconnected 2D quantum dot array in planar silicon, demonstrating independent control over electron fillings and the tunnel couplings of nearest-neighbor dots. More importantly, we also demonstrate the wide tuning of tunnel couplings between next-nearest-neighbor dots,which plays a crucial role in 2D quantum dot arrays. This excellent tunability enables us to alter the coupling configuration of the array as needed. These results open up the possibility of utilizing silicon quantum dot arrays as versatile platforms for quantum computing and quantum simulation.

cond-mat.mes-hall↗

arXiv2024

Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot

Electron spin qubits in silicon are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit Controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with a fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise.

cond-mat.mes-hall↗

arXiv2024

A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots

To realize large-scale quantum information processes, an ideal scheme for two-qubit operations should enable diverse operations with given hardware and physical interaction. However, for spin qubits in semiconductor quantum dots, the common two-qubit operations, including CPhase gates, SWAP gates, and CROT gates, are realized with distinct parameter regions and control waveforms, posing challenges for their simultaneous implementation. Here, taking advantage of the inherent Heisenberg interaction between spin qubits, we propose and verify a fast composite two-qubit gate scheme to extend the available two-qubit gate types as well as reduce the requirements for device properties. Apart from the formerly proposed CPhase (controlled-phase) gates and SWAP gates, theoretical results indicate that the iSWAP-family gate and Fermionic simulation (fSim) gate set are additionally available for spin qubits. Meanwhile, our gate scheme limits the parameter requirements of all essential two-qubit gates to a common J~ΔE_Z region, facilitate the simultaneous realization of them. Furthermore, we present the preliminary experimental demonstration of the composite gate scheme, observing excellent match between the measured and simulated results. With this versatile composite gate scheme, broad-spectrum two-qubit operations allow us to efficiently utilize the hardware and the underlying physics resources, helping accelerate and broaden the scope of the upcoming noise intermediate-scale quantum (NISQ) computing.

cond-mat.mes-hall↗

arXiv2023

Ultrafast switchable spin-orbit coupling for silicon spin qubits via spin valves

Recent experimental breakthroughs, particularly for single-qubit and two-qubit gates exceeding the error correction threshold, highlight silicon spin qubits as leading candidates for fault-tolerant quantum computation. In the existing architecture, intrinsic or synthetic spin-orbit coupling (SOC) is critical in various aspects, including electrical control, addressability, scalability, etc. However, the high-fidelity SWAP operation and quantum state transfer (QST) between spin qubits, crucial for qubit-qubit connectivity, require the switchable nature of SOC which is rarely considered. Here, we propose a flexible architecture based on spin valves by electrically changing its magnetization orientation within sub-nanoseconds to generate ultrafast switchable SOC. Based on the switchable SOC architecture, both SWAP operation of neighbor spin qubits and resonant QST between distant spins can be realized with fidelity exceeding 99% while considering the realistic experimental parameters. Benefiting from the compatible processes with the modern semiconductor industry and experimental advances in spin valves and spin qubits, our results pave the way for future construction of silicon-based quantum chips.

cond-mat.mes-hall↗

arXiv2023

Coupling of hole double quantum dot in planar germanium to a microwave cavity

In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approach for achieving long-range coupling and scaling up of qubits. Here, we demonstrate the coupling between holes in a planar germanium double quantum dot (DQD) and photons in a microwave cavity. Specifically, a real-time calibrated virtual gate method is developed to characterize this hybrid system, which in turn allows us to determine the typical parameters sequentially through single-parameter fitting instead of conventional multi-parameter fitting with additional uncertainty, and gives the hole-photon coupling rate of $g_0/2π$ = 21.7 MHz. This work is a step toward further research on hole-photon interactions and long-range qubit coupling in planar germanium. The experimental method developed in this work contributes to the more accurate and efficient characterization of hybrid cavity-QED systems.

cond-mat.mes-hall↗

arXiv2023

A SWAP Gate for Spin Qubits in Silicon

With one- and two-qubit gate fidelities approaching the fault-tolerance threshold for spin qubits in silicon, how to scale up the architecture and make large arrays of spin qubits become the more pressing challenges. In a scaled-up structure, qubit-to-qubit connectivity has crucial impact on gate counts of quantum error correction and general quantum algorithms. In our toolbox of quantum gates for spin qubits, SWAP gate is quite versatile: it can help solve the connectivity problem by realizing both short- and long-range spin state transfer, and act as a basic two-qubit gate, which can reduce quantum circuit depth when combined with other two-qubit gates. However, for spin qubits in silicon quantum dots, high fidelity SWAP gates have not been demonstrated due to the requirements of large circuit bandwidth and a highly adjustable ratio between the strength of the exchange coupling J and the Zeeman energy difference Delta E_z. Here we demonstrate a fast SWAP gate with a duration of ~25 ns based on quantum dots in isotopically enriched silicon, with a highly adjustable ratio between J and Delta E_z, for over two orders of magnitude in our device. We are also able to calibrate the single-qubit local phases during the SWAP gate by incorporating single-qubit gates in our circuit. By independently reading out the qubits, we probe the anti-correlations between the two spins, estimate the operation fidelity and analyze the dominant error sources for our SWAP gate. These results pave the way for high fidelity SWAP gates, and processes based on them, such as quantum communication on chip and quantum simulation by engineering the Heisenberg Hamiltonian in silicon.

cond-mat.mes-hall↗

arXiv2023

Single spin qubit geometric gate in a silicon quantum dot

Preserving qubit coherence and maintaining high-fidelity qubit control under complex noise environment is an enduring challenge for scalable quantum computing. Here we demonstrate an addressable fault-tolerant single spin qubit with an average control fidelity of 99.12% via randomized benchmarking on a silicon quantum dot device with an integrated micromagnet. Its dephasing time T2* is 1.025 us and can be enlarged to 264 us by using the Hahn echo technique, reflecting strong low-frequency noise in our system. To break through the noise limitation, we introduce geometric quantum computing to obtain high control fidelity by exploiting its noise-resilient feature. However, the control fidelities of the geometric quantum gates are lower than 99%. According to our simulation, the noise-resilient feature of geometric quantum gates is masked by the heating effect. With further optimization to alleviate the heating effect, geometric quantum computing can be a potential approach to reproducibly achieving high-fidelity qubit control in a complex noise environment.

cond-mat.mes-hall↗

arXiv2023

Correcting on-chip distortion of control pulses with silicon spin qubits

Pulse distortion, as one of the coherent error sources, hinders the characterization and control of qubits. In the semiconductor quantum dot system, the distortions on measurement pulses and control pulses disturb the experimental results, while no effective calibration procedure has yet been reported. Here, we demonstrate two different calibration methods to calibrate and correct the distortion using the two-qubit system as a detector. The two calibration methods have different correction accuracy and complexity. One is the coarse predistortion (CPD) method, with which the distortion is partly relieved. The other method is the all predistortion (APD) method, with which we measure the transfer function and significantly improve the exchange oscillation homogeneity. The two methods use the exchange oscillation homogeneity as the metric and are appropriate for any qubit that oscillates with a diabatic pulse. With the APD procedure, an arbitrary control waveform can be accurately delivered to the device, which is essential for characterizing qubits and improving gate fidelity.

cond-mat.mes-hall↗

arXiv2023

Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots

High-fidelity singlet-triplet state readout is essential for large-scale quantum computing. However, the widely used threshold method of comparing a mean value with the fixed threshold will limit the judgment accuracy, especially for the relaxed triplet state, under the restriction of relaxation time and signal-to-noise ratio. Here, we achieve an enhanced latching readout based on Pauli spin blockade in a Si-MOS double quantum dot device and demonstrate an average singlet-triplet state readout fidelity of 97.59% by the threshold method. We reveal the inherent deficiency of the threshold method for the relaxed triplet state classification and introduce machine learning as a relaxation-independent readout method to reduce the misjudgment. The readout fidelity for classifying the simulated single-shot traces can be improved to 99.67% by machine learning method, better than the threshold method of 97.54% which is consistent with the experimental result. This work indicates that machine learning method can be a strong potential candidate for alleviating the restrictions of stably achieving high-fidelity and high-accuracy singlet-triplet state readout in large-scale quantum computing.

cond-mat.mes-hall↗

arXiv2023

Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots

The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process is sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. Then, we analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage we ensure the accuracy of the extrapolated probability. Then, we prove that the efficiency and robustness of this method is 60 times larger than that of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout up to 0.7 K/1.5T in the future.

cond-mat.mes-hall↗

arXiv2023

Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit

Hole spin qubits based on germanium (Ge) have strong tunable spin orbit interaction (SOI) and ultrafast qubit operation speed. Here we report that the Rabi frequency (f_Rabi) of a hole spin qubit in a Ge hut wire (HW) double quantum dot (DQD) is electrically tuned through the detuning energy and middle gate voltage (V_M). f_Rabi gradually decreases with increasing detuning energy; on the contrary, f_Rabi is positively correlated with V_M. We attribute our results to the change of electric field on SOI and the contribution of the excited state in quantum dots to f_Rabi. We further demonstrate an ultrafast f_Rabi exceeding 1.2 GHz, which evidences the strong SOI in our device. The discovery of an ultrafast and electrically tunable f_Rabi in a hole spin qubit has potential applications in semiconductor quantum computing.

cond-mat.mes-hall↗

arXiv2023

Flopping-mode spin qubit in a Si-MOS quantum dot

Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, flopping-mode EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.

cond-mat.mes-hall↗

arXiv2023

Full tunability and quantum coherent dynamics of a driven multilevel system

Tunability of an artificial quantum system is crucial to its capability to process quantum information. However, tunability usually poses significant demand on the design and fabrication of a device. In this work, we demonstrate that Floquet engineering based on longitudinal driving provides distinct possibilities in enhancing the tunability of a quantum system without needing additional resources. In particular, we study a multilevel model based on gate-defined double quantum dots, where coherent interference occurs when the system is driven longitudinally. We develop an effective model to describe the driven dynamics of this multilevel system, and show that it is highly tunable via the driving field. We then illustrate the versatility and rich physics of a driven multilevel system by exploring phenomena such as driving modulation of resonances, adiabatic state transfer, and dark state. In the context of qubit control, we propose noise-resistant quantum gates based on adiabatic passage. The theoretical consideration we present here is rather general, and is in principle valid for other multilevel quantum systems.

cond-mat.mes-hall↗