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arXiv · 2410.00768

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Zhenzhen Kong·Zonghu Li·Yuchen Zhou·Gang Cao·Hai-Ou Li·Jiale Su·Yiwen Zhang·Jinbiao Liu·Guo-Ping Guo·Junfeng Li·Jun Luo·Chao Zhao·Tianchun Ye·Guilei Wang
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Abstract

Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as the primary material platform for spin hole qubits.A low disorder material environment is essential for this process. In this work, we fabricated a Ge/SiGe heterojunction with a 60 nm buried quantum well layer on a Si substrate using reduced pressure chemical vapor deposition technology. At a temperature of 16 mK, when the carrier density is 1.87*10^11/cm2, we obtained a mobility as high as 308.64*10^4cm2/Vs. Concurrently, double quantum dot and planar germanium coupling with microwave cavities were also successfully achieved.This fully demonstrates that this structure can be used for the preparation of higher-performance hole spin qubits.

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Zhenzhen Kong, Zonghu Li, Yuchen Zhou, Gang Cao, Hai-Ou Li, Jiale Su, Yiwen Zhang, Jinbiao Liu, Guo-Ping Guo, Junfeng Li, Jun Luo, Chao Zhao, Tianchun Ye, Guilei Wang. 2024-10-01. High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits. https://arxiv.org/abs/2410.00768

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