arXiv subjects

Haijun Zhang

Publications and source records attributed to Haijun Zhang.

At least 163 records · Page 9Linked to original sources

arXiv2017

Ultrafast Electronic Dynamics of a Weyl Semimetal MoTe$_2$ Revealed by Time and Angle Resolved Photoemission Spectroscopy

A Weyl semimetal is a new type of topological quantum phase with intriguing physics near the Weyl nodes. Although the equilibrium state of Weyl semimetals has been investigated, the ultrafast dynamics near the Weyl node in the nonequilibrium state is still missing. Here by performing time and angle resolved photoemission spectroscopy on type-II Weyl semimetal MoTe$_2$, we reveal the dispersion of the unoccupied states and identify the Weyl node at 70 meV above E$_F$. Moreover, by tracking the ultrafast relaxation dynamics near the Weyl node upon photo-excitation with energy, momentum and temporal resolution, two intrinsic recovery timescales are observed, a fast one of 430 fs and a slow one of 4.1 ps, which are associated with hot electron cooling by optical phonon cascade emission and anharmonic decay of hot optical phonons respectively. The electron population shows a metallic response, and the two temperature model fitting of the transient electronic temperature gives an electron-phonon coupling constant of $λ\langleΩ^2\rangle\simeq32$ $\textrm{meV}^2$. Our work provides important dynamic information for understanding the relaxation mechanism of a Weyl semimetal and for exploiting potential applications using ultrafast optical control.

cond-mat.mtrl-sci↗

arXiv2017

Strain-induced quantum topological phase transitions in Na3Bi

Strain can be used as an effective tool to tune the crystal structure of materials and hence to modify their electronic structures, including topological properties. Here, taking Na3Bi as a paradigmatic example, we demonstrated with first-principles calculations and k$\cdot$p models that the topological phase transitions can be induced by various types of strains. For instance, the Dirac semimetal phase of ambient Na3Bi can be tuned into a topological insulator (TI) phase by uniaxial strain along the h100i axis. Hydrostatic pressure can let the ambient structure transfer into a new thermodynamically stable phase with Fm-3m symmetry, coming with a perfect parabolic semimetal having a single contact point between the conduction and valence bands, exactly at $Γ$ point on the Fermi level like $α$-Sn. Furthermore, uniaxial strain in the <100> direction can tune the new parabolic semimetal phase into a Dirac semimetal, while shear strains in both the <100> and <111> directions can take the new parabolic semimetal phase into a TI. k$\cdot$p models are constructed to gain more insights into these quantum topological phase transitions. At last, we calculated surface states of Fm-3m Na3Bi without and with strains to verify these topological transitions.

cond-mat.mtrl-sci↗

arXiv2017

Fog Radio Access Networks: Mobility Management, Interference Mitigation and Resource Optimization

In order to make Internet connections ubiquitous and autonomous in our daily lives, maximizing the utilization of radio resources and social information is one of the major research topics in future mobile communication technologies. Fog radio access network (FRAN) is regarded as a promising paradigm for the fifth generation (5G) of mobile networks. FRAN integrates fog computing with RAN and makes full use of the edge of networks. FRAN would be different in networking, computing, storage and control as compared with conventional radio access networks (RAN) and the emerging cloud RAN. In this article, we provide a description of the FRAN architecture, and discuss how the distinctive characteristics of FRAN make it possible to efficiently alleviate the burden on the fronthaul, backhaul and backbone networks, as well as reduce content delivery latencies. We will focus on the mobility management, interference mitigation, and resource optimization in FRAN. Our simulation results show that the proposed FRAN architecture and the associated mobility and resource management mechanisms can reduce the signaling cost and increase the net utility for the RAN.

cs.IT↗

arXiv2017

Helicity dependent photocurrent in electrically gated (Bi,Sb)_2Te_3 thin films

Circularly polarized photons are known to generate a directional helicity-dependent photocurrent in three-dimensional topological insulators at room temperature. Surprisingly, the phenomenon is readily observed at photon energies that excite electrons to states far above the spin-momentum locked Dirac cone and the underlying mechanism for the helicity-dependent photocurrent is still not understood. We resolve the puzzle through a comprehensive study of the helicity-dependent photocurrent in (Bi,Sb)_2Te_3 thin films as a function of the incidence angle of the optical excitation, its wavelength, and the gate-tuned chemical potential. Our observations allow us to unambiguously identify the circular photo-galvanic effect as the dominant mechanism for the helicity-dependent photocurrent. Additionally, we use an analytical calculation to relate the directional nature of the photocurrent to asymmetric optical transitions between the topological surface states and bulk bands. The insights we obtain are important for engineering opto-spintronic devices that rely on optical steering of spin and charge currents.

cond-mat.mtrl-sci↗

arXiv2016

Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2

Weyl semimetal is a new quantum state of matter [1-12] hosting the condensed matter physics counterpart of relativisticWeyl fermion [13] originally introduced in high energy physics. The Weyl semimetal realized in the TaAs class features multiple Fermi arcs arising from topological surface states [10, 11, 14-16] and exhibits novel quantum phenomena, e.g., chiral anomaly induced negative mag-netoresistance [17-19] and possibly emergent supersymmetry [20]. Recently it was proposed theoretically that a new type (type-II) of Weyl fermion [21], which does not have counterpart in high energy physics due to the breaking of Lorentz invariance, can emerge as topologically-protected touching between electron and hole pockets. Here, we report direct spectroscopic evidence of topological Fermi arcs in the predicted type-II Weyl semimetal MoTe2 [22-24]. The topological surface states are confirmed by directly observing the surface states using bulk-and surface-sensitive angle-resolved photoemission spectroscopy (ARPES), and the quasi-particle interference (QPI) pattern between the two putative Fermi arcs in scanning tunneling microscopy (STM). Our work establishes MoTe2 as the first experimental realization of type-II Weyl semimetal, and opens up new opportunities for probing novel phenomena such as exotic magneto-transport [21] in type-II Weyl semimetals.

cond-mat.mes-hall↗

arXiv2016

Fronthauling for 5G LTE-U Ultra Dense Cloud Small Cell Networks

Ultra dense cloud small cell network (UDCSNet), which combines cloud computing and massive deployment of small cells, is a promising technology for the fifth-generation (5G) LTE-U mobile communications because it can accommodate the anticipated explosive growth of mobile users' data traffic. As a result, fronthauling becomes a challenging problem in 5G LTE-U UDCSNet. In this article, we present an overview of the challenges and requirements of the fronthaul technology in 5G \mbox{LTE-U} UDCSNets. We survey the advantages and challenges for various candidate fronthaul technologies such as optical fiber, millimeter-wave based unlicensed spectrum, Wi-Fi based unlicensed spectrum, sub 6GHz based licensed spectrum, and free-space optical based unlicensed spectrum.

cs.IT↗

arXiv2016

Ideal Weyl semimetals in the chalcopyrites CuTlSe2, AgTlTe2, AuTlTe2 and ZnPbAs2

Weyl semimetals are new states of matter which feature novel Fermi arcs and exotic transport phenomena. Based on first-principles calculations, we report that the chalcopyrites CuTlSe2, AgTlTe2, AuTlTe2 and ZnPbAs2 are ideal Weyl semimetals, having largely separated Weyl points (~ 0.05/A) and uncovered Fermi arcs that are amenable to experimental detections. We also construct a minimal effective model to capture the low-energy physics of this class of Weyl semimetals. Our discovery is a major step toward a perfect playground of intriguing Weyl semimetals and potential applications for low-power and high-speed electronics.

cond-mat.mes-hall↗

arXiv2016

Symmetry-protected ideal Weyl semimetal in HgTe-class materials

Ideal Weyl semimetals with all Weyl nodes exactly at the Fermi level and no coexisting trivial Fermi surfaces in the bulk, similar to graphene, could feature deep physics such as exotic transport phenomena induced by the chiral anomaly. Here, we show that HgTe and half-Heusler compounds, under a broad range of in-plane compressive strain, could be materials in nature realizing ideal Weyl semimetals with four pairs of Weyl nodes and topological surface Fermi arcs. Generically, we find that the HgTe-class materials with nontrivial band inversion and noncentrosymmetry provide a promising arena to realize ideal Weyl semimetals. Such ideal Weyl semimetals could further provide a unique platform to study emergent phenomena such as the interplay between ideal Weyl fermions and superconductivity in the half-Heusler compound LaPtBi.

cond-mat.mes-hall↗

arXiv2015

Classification of stable Dirac and Weyl semimetals with reflection and rotational symmetry

Three dimensional (3D) Dirac semimetal is a novel state of quantum matter, characterized by the gapless bulk four-fold degeneracy near Fermi energy. Soon after its discovery, the classification of stable 3D Dirac semimetals with inversion and rotational symmetry have been studied. However, only ten out of thirty-two point groups have both inversion and rotational symmetry, and we need a more complete classification of stable 3D Dirac semimetals. Here we classify stable 3D Dirac semimetals with reflection symmetry and rotational symmetry in the presence of time reversal symmetry, which belong to seventeen different point groups. These systems include the systems preserving inversion symmetry except $\mathrm{C_{3i}}$. They have two classes of reflection symmetry, with the mirror plane parallel to rotation axis and the mirror plane perpendicular to rotation axis. In both cases two types of Dirac semimetals are determined by four different reflection symmetries. The first type of Dirac semimetals will appear through accidental band crossing (ABC). The second type of Dirac semimetals have a Dirac point at a time reversal invariant momentum (TBC). We show that in both mirror parallel and perpendicular cases, $C_{2,3}$ symmetry can only protect stable Dirac points via TBC, while $C_{4,6}$ symmetry can have stable Dirac points as ABC or TBC. We further discuss that Weyl line nodes and Dirac semimetal can exist in Brillouin zone at the same time using $\mathrm{C_{4v}}$ symmetry as an example. Finally we classify Dirac line nodes and Weyl line nodes to show in which types of mirror plane they can exist.

cond-mat.mes-hall↗

arXiv2015

Self-Organization in Disaster Resilient Heterogeneous Small Cell Networks

Heterogeneous small cell networks with overlay femtocells and macrocell is a promising solution for future heterogeneous wireless cellular communications. However, great resilience is needed in heterogeneous small cells in case of accidents, attacks and natural disasters. In this article, we first describe the network architecture of disaster resilient heterogeneous small cell networks (DRHSCNs), where several self-organization inspired approaches are applied. Based on the proposed resilient heterogeneous small cell network architecture, self-configuring (power, physical cell ID and neighbor cell list self-configuration) and self-optimizing (coverage and capacity optimization and mobility robustness optimization) techniques are investigated in the DRHSCN. Simulation results show that self-configuration and self-optimization can effectively improve the performance of the deployment and operation of the small cell networks in disaster scenarios.

cs.NI↗

arXiv2015

Coexistence of Wi-Fi and Heterogeneous Small Cell Networks Sharing Unlicensed Spectrum

As two major players in terrestrial wireless communications, Wi-Fi systems and cellular networks have different origins and have largely evolved separately. Motivated by the exponentially increasing wireless data demand, cellular networks are evolving towards a heterogeneous and small cell network architecture, wherein small cells are expected to provide very high capacity. However, due to the limited licensed spectrum for cellular networks, any effort to achieve capacity growth through network densification will face the challenge of severe inter-cell interference. In view of this, recent standardization developments have started to consider the opportunities for cellular networks to use the unlicensed spectrum bands, including the 2.4 GHz and 5 GHz bands that are currently used by Wi-Fi, Zigbee and some other communication systems. In this article, we look into the coexistence of Wi-Fi and 4G cellular networks sharing the unlicensed spectrum. We introduce a network architecture where small cells use the same unlicensed spectrum that Wi-Fi systems operate in without affecting the performance of Wi-Fi systems. We present an almost blank subframe (ABS) scheme without priority to mitigate the co-channel interference from small cells to Wi-Fi systems, and propose an interference avoidance scheme based on small cells estimating the density of nearby Wi-Fi access points to facilitate their coexistence while sharing the same unlicensed spectrum. Simulation results show that the proposed network architecture and interference avoidance schemes can significantly increase the capacity of 4G heterogeneous cellular networks while maintaining the service quality of Wi-Fi systems.

cs.IT↗

arXiv2015

Cooperative Interference Mitigation and Handover Management for Heterogeneous Cloud Small Cell Networks

Heterogeneous small cell network has attracted much attention to satisfy users' explosive data traffic requirements. Heterogeneous cloud small cell network (HCSNet), which combines cloud computing and heterogeneous small cell network, will likely play an important role in 5G mobile communication networks. However, with massive deployment of small cells, co-channel interference and handover management are two important problems in HCSNet, especially for cell edge users. In this article, we examine the problems of cooperative interference mitigation and handover management in HCSNet. A network architecture is described to combine cloud radio access network with small cells. An effective coordinated multi-point (CoMP) clustering scheme using affinity propagation is adopted to mitigate cell edge users' interference. A low complexity handover management scheme is presented, and its signaling procedure is analyzed in HCSNet. Numerical results show that the proposed network architecture, CoMP clustering scheme and handover management scheme can significantly increase the capacity of HCSNet while maintaining users' quality of service.

cs.IT↗

arXiv2015

Pressure induced metallization with absence of structural transition in layered MoSe2

Layered transition-metal dichalcogenides have emerged as exciting material systems with atomically thin geometries and unique electronic properties. Pressure is a powerful tool for continuously tuning their crystal and electronic structures away from the pristine states. Here, we systematically investigated the pressurized behavior of MoSe2 up to ~ 60 GPa using multiple experimental techniques and ab -initio calculations. MoSe2 evolves from an anisotropic two-dimensional layered network to a three-dimensional structure without a structural transition, which is a complete contrast to MoS2. The role of the chalcogenide anions in stabilizing different layered patterns is underscored by our layer sliding calculations. MoSe2 possesses highly tunable transport properties under pressure, determined by the gradual narrowing of its band-gap followed by metallization. The continuous tuning of its electronic structure and band-gap in the range of visible light to infrared suggest possible energy-variable optoelectronics applications in pressurized transition-metal dichalcogenides.

cond-mat.mtrl-sci↗

arXiv2015

Disentangling the magnetoelectric and thermoelectric transport in topological insulator thin films

We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers, whereas the Seebeck coefficient is positive indicative of hole-type carriers. This sign anomaly is due to the distinct transport behaviors of the bulk and surface states: the surface Dirac fermions dominate magnetoelectric transport while the thermoelectric effect is mainly determined by the bulk states. These findings may inspire new ideas for designing topological insulator-based high efficiency thermoelectric devices.

cond-mat.mtrl-sci↗

arXiv2015

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon as the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism.Here we report the experimental observation of the QAH state in V-doped (Bi,Sb)2Te3 films with the zero-field longitudinal resistance down to 0.00013+-0.00007h/e2 (~3.35+-1.76 ohm), Hall conductance reaching 0.9998+-0.0006e2/h and the Hall angle becoming as high as 89.993+-0.004degree at T=25mK. Further advantage of this system comes from the fact that it is a hard ferromagnet with a large coercive field (Hc>1.0T) and a relative high Curie temperature. This realization of robust QAH state in hard FMTIs is a major step towards dissipationless electronic applications without external fields.

cond-mat.mtrl-sci↗

arXiv2014

Topological States in Ferromagnetic CdO/EuO Superlattices and Quantum Wells

Based on ab initio calculations, we demonstrate that the ferromagnetic CdO/EuO superlattice is a simple Weyl semimetal with two linear Weyl nodes in the Brillouin zone, and the corresponding CdO/EuO quantum well realizes the stichometric quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system.

cond-mat.mes-hall↗

arXiv2014

Generation and Electric Control of Spin-Coupled Valley Current in WSe2

The valley degree of freedom in layered transition-metal dichalcogenides (MX2) provides the opportunity to extend functionalities of novel spintronics and valleytronics devices. Due to spin splitting induced by spin-orbital coupling (SOC), the non-equilibrium charge carrier imbalance between two degenerate and inequivalent valleys to realize valley/spin polarization has been successfully demonstrated theoretically and supported by optical experiments. However, the generation of a valley/spin current by the valley polarization in MX2 remains elusive and a great challenge. Here, within an electric-double-layer transistor based on WSe2, we demonstrated a spin-coupled valley photocurrent whose direction and magnitude depend on the degree of circular polarization of the incident radiation and can be further greatly modulated with an external electric field. Such room temperature generation and electric control of valley/spin photocurrent provides a new property of electrons in MX2 systems, thereby enabling new degrees of control for quantum-confined spintronics devices.

cond-mat.mes-hall↗

arXiv2014

Quantum Spin Hall and Quantum Anomalous Hall States Realized in Junction Quantum Wells

Both quantum spin Hall and quantum anomalous Hall states are novel states of quantum matter with promising applications. We propose junction quantum wells comprising II-VI, III-V or IV semiconductors as a large class of new materials realizing the quantum spin Hall state. Especially, we find that the bulk band gap for the quantum spin Hall state can be as large as 0.1 eV. Further more, magnetic doping would induce the ferromagnetism in these junction quantum wells due to band edge singularities in the band-inversion regime and to realize the quantum anomalous Hall state.

cond-mat.mes-hall↗