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Hanghui Chen

Publications and source records attributed to Hanghui Chen.

At least 37 records · Page 2Linked to original sources

Coupled magnetic and structural phase transitions in the antiferromagnetic polar metal Pb2CoOsO6 under pressure

Pb$_2$CoOsO$_6$ is a newly synthesized polar metal in which inversion symmetry is broken by the magnetic frustration in an antiferromagnetic ordering of Co and Os sublattices. The coupled magnetic and structural transition occurs at 45 K at ambient pressure. Here we perform transport measurements and first-principles calculations to study the pressure effects on the magnetic/structural coupled transition of Pb$_2$CoOsO$_6$. Experimentally we monitor the resistivity anomaly at $T_N$ under various pressures up to 11 GPa in a cubic anvil cell apparatus. We find that $T_N$ determined from the resistivity anomaly first increases quickly with pressure in a large slope of $dT_N/dP$ = +6.8(8) K/GPa for $P < 4$ GPa, and then increases with a much reduced slope of 1.8(4) K/GPa above 4 GPa. Our first-principles calculations suggest that the observed discontinuity of $dT_N/dP$ around 4 GPa may be attributed to the vanishing of Os magnetic moment under pressure. Pressure substantially reduces the Os moment and completely suppresses it above a critical value, which relieves the magnetic frustration in the antiferromagnetic ordering of Pb$_2$CoOsO$_6$. The Co and Os polar distortions decrease with the increasing pressure and simultaneously vanish at the critical pressure. Therefore above the critical pressure a new centrosymmetric antiferromagnetic state emerges in Pb$_2$CoOsO$_6$, distinct from the one under ambient pressure, thus showing a discontinuity in $dT_N/dP$.

cond-mat.mtrl-sci↗

Linear magnetoresistance with a universal energy scale in a strong-coupling superconductor

The recent discovery of a nonsaturating linear magnetoresistance in several correlated electron systems near a quantum critical point has revealed an interesting interplay between the linear magnetoresistance and the zero-field linear-in-temperature resistivity. These studies suggest a possible role of quantum criticality on the observed linear magnetoresistance. Here, we report our discovery of a nonsaturating, linear magnetoresistance in Mo$_8$Ga$_{41}$, a nearly isotropic strong electron-phonon coupling superconductor with a linear-in-temperature resistivity from the transition temperature to $\sim$55 K. The growth of the resistivity in field is comparable to that in temperature, provided that both quantities are measured in the energy unit. Our datasets are remarkably similar to magnetoresistance data of the optimally doped La$_{2-x}$Sr$_x$CuO$_4$, despite the clearly different crystal and electronic structures, and the apparent absence of quantum critical physics in Mo$_8$Ga$_{41}$. A new empirical scaling formula is developed, which is able to capture the key features of the low-temperature magnetoresistance data of Mo$_8$Ga$_{41}$, as well as the data of La$_{2-x}$Sr$_x$CuO$_4$.

cond-mat.supr-con↗

A substantial hybridization between correlated Ni-d orbital and itinerant electrons in infinite-layer nickelates

The discovery of unconventional superconductivity in hole doped NdNiO2, similar to CaCuO2, has received enormous attention. However, different from CaCuO2, RNiO2 (R = Nd, La) has itinerant electrons in the rare-earth spacer layer. Previous studies show that the hybridization between Ni-dx2-y2 and rare-earth-d orbitals is very weak and thus RNiO2 is still a promising analog of CaCuO2. Here, we perform first-principles calculations to show that the hybridization between Ni-dx2-y2 orbital and itinerant electrons in RNiO2 is substantially stronger than previously thought. The dominant hybridization comes from an interstitial-s orbital rather than rare-earth-d orbitals, due to a large inter-cell hopping. Because of the hybridization, Ni local moment is screened by itinerant electrons and the critical U_Ni for long-range magnetic ordering is increased. Our work shows that the electronic structure of RNiO2 is distinct from CaCuO2, implying that the observed superconductivity in infinite-layer nickelates does not emerge from a doped Mott insulator.

cond-mat.str-el↗

Correlation-driven eightfold magnetic anisotropy in a two-dimensional oxide monolayer

Engineering magnetic anisotropy in two-dimensional systems has enormous scientific and technological implications. The uniaxial anisotropy universally exhibited by two-dimensional magnets has only two stable spin directions, demanding 180 degrees spin switching between states. We demonstrate a novel eightfold anisotropy in magnetic SrRuO3 monolayers by inducing a spin reorientation in (SrRuO3)1/(SrTiO3)N superlattices, in which the magnetic easy axis of Ru spins is transformed from uniaxial <001> direction (N = 1 and 2) to eightfold <111> directions (N = 3, 4 and 5). This eightfold anisotropy enables 71 and 109 degrees spin switching in SrRuO3 monolayers, analogous to 71 and 109 degrees polarization switching in ferroelectric BiFeO3. First-principle calculations reveal that increasing the SrTiO3 layer thickness induces an emergent correlation-driven orbital ordering, tuning spin-orbit interactions and reorienting the SrRuO3 monolayer easy axis. Our work demonstrates that correlation effects can be exploited to substantially change spin-orbit interactions, stabilizing unprecedented properties in two-dimensional magnets and opening rich opportunities for low-power, multi-state device applications.

cond-mat.mtrl-sci↗

Design of a multifunctional polar metal via first-principles high-throughput structure screening

Intrinsic polar metals are rare, especially in oxides, because free electrons screen electric fields in a metal and eliminate the internal dipoles that are needed to break inversion symmetry. Here we use first-principles high-throughput structure screening to predict a new polar metal in bulk and thin film forms. After screening more than 1000 different crystal structures, we find that ordered BiPbTi2O6 can crystallize in three polar and metallic structures, which can be transformed between via pressure or strain. In a heterostructure of layered BiPbTi2O6 and PbTiO3, multiple states with different relative orientations of BiPbTi2O6 polar displacements, and PbTiO3 polarization, can be stabilized. At room temperature, the interfacial coupling enables electric fields to first switch PbTiO3 polarization and subsequently drive 180° change of BiPbTi2O6 polar displacements. At low temperatures, the heterostructure provides a tunable tunnelling barrier and might be used in multi-state memory devices.

cond-mat.mtrl-sci↗

The complex non-collinear magnetic orderings in Ba2YOsO6: A new approach to tuning spin-lattice interactions and controlling magnetic orderings in frustrated complex oxides

Frustrated magnets are one class of fascinating materials that host many intriguing phases such as spin ice, spin liquid and complex long-range magnetic orderings at low temperatures. In this work we use first-principles calculations to find that in a wide range of magnetically frustrated oxides, at zero temperature a number of non-collinear magnetic orderings are more stable than the type-I collinear ordering that is observed at finite temperatures. The emergence of non-collinear orderings in those complex oxides is due to higher-order exchange interactions that originate from second-row and third-row transition metal elements. This implies a collinear-to-noncollinear spin transition at sufficiently low temperatures in those frustrated complex oxides. Furthermore, we find that in a particular oxide Ba$_2$YOsO$_6$, experimentally feasible uniaxial strain can tune the material between two different non-collinear magnetic orderings. Our work predicts new non-collinear magnetic orderings in frustrated complex oxides at very low temperatures and provides a mechanical route to tuning complex non-collinear magnetic orderings in those materials.

cond-mat.mtrl-sci↗

Coexistence of polar displacements and conduction in doped ferroelectrics: an ab initio comparative study

Polar metals are rare because free carriers in metals screen electrostatic potential and eliminate internal dipoles. Degenerate doped ferroelectrics may create an approximate polar metallic phase. We use first-principles calculations to investigate $n$-doped LiNbO$_3$-type oxides (LiNbO$_3$ as the prototype) and compare to widely studied perovskite oxides (BaTiO$_3$ as the prototype). In the rigid-band approximation, substantial polar displacements in $n$-doped LiNbO$_3$ persist even at 0.3 $e$/f.u. ($\simeq$ 10$^{21}$ cm$^{-3}$), while polar displacements in $n$-doped BaTiO$_3$ quickly get suppressed and completely vanish at 0.1 $e$/f.u. Furthermore, in $n$-doped LiNbO$_3$, Li-O displacements decay more slowly than Nb-O displacements, while in $n$-doped BaTiO$_3$, Ba-O and Ti-O displacements decay approximately at the same rate. Supercell calculations that use oxygen vacancies as electron donors support the main results from the rigid-band approximation and provide more detailed charge distributions. Substantial cation displacements are observed throughout LiNbO$_{3-δ}$($δ= 4.2\%$), while cation displacements in BaTiO$_{3-δ}$($δ= 4.2\%$) are almost completely suppressed. We find that conduction electrons in LiNbO$_{3-δ}$ are not as uniformly distributed as in BaTiO$_{3-δ}$, implying that the rigid-band approximation should be used with caution in simulating electron doped LiNbO$_3$-type oxides. Our work shows that polar distortions and conduction can coexist in a wide range of electron concentration in $n$-doped LiNbO$_3$, which is a practical approach to generating an approximate polar metallic phase. Combining doped ferroelectrics and doped semiconductors may create new functions for devices.

physics.comp-ph↗

Magnetically-driven orbital-selective insulator-metal transition in double perovskite oxides

Interaction-driven metal-insulator transitions or Mott transitions are widely observed in condensed-matter systems. In multi-orbital systems, many-body physics is richer in which an orbital-selective metal-insulator transition is an intriguing and unique phenomenon. Here we use first-principles calculations to show that a magnetic transition (from paramagnetic to long-range magnetically ordered) can simultaneously induce an orbital-selective insulator-metal transition in rock-salt ordered double perovskite oxides $A_2BB'$O$_6$ where $B$ is a non-magnetic ion (Y$^{3+}$ and Sc$^{3+}$) and $B'$ a magnetic ion with a $d^3$ electronic configuration (Ru$^{5+}$ and Os$^{5+}$). The orbital selectivity originates from geometrical frustration of a face-centered-cubic lattice on which the magnetic ions $B'$ reside. Including realistic structural distortions and spin-orbit interaction do not affect the transition. The predicted orbital-selective transition naturally explains the anomaly observed in the electric resistivity of Sr$_2$YRuO$_6$. Implications of other available experimental data are also discussed. Our work shows that by exploiting geometrical frustration on non-bipartite lattices, novel electronic/magnetic/orbital-coupled phase transitions can occur in correlated materials that are in the vicinity of metal-insulator phase boundary.

cond-mat.str-el↗

Pressure-induced enhancement of non-polar to polar transition temperature in metallic LiOsO$_3$

LiOsO$_3$ undergoes a continuous transition from a centrosymmetric $R\bar{3}c$ structure to a polar $R3c$ structure at $T_s=140$~K. By combining transport measurements and first-principles calculations, we find that $T_s$ is enhanced by applied pressure, and it reaches a value of $\sim$250~K at $\sim$6.5~GPa. The enhancement is due to the fact that the polar $R3c$ structure of LiOsO$_3$ has a smaller volume than the centrosymmetric $R\bar{3}c$ structure. Pressure generically favors the structure with the smallest volume, and therefore further stabilizes the polar $R3c$ structure over the $R\bar{3}c$ structure, leading to the increase in $T_s$.

cond-mat.mtrl-sci↗

Atomic layer control of metal-insulator behavior in oxide quantum wells integrated directly on silicon

We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 quantum wells integrated directly on Si(100). The quantum wells exhibit metallic transport described by Fermi-liquid behavior. Carriers arise from both charge transfer from the LaTiO3 to SrTiO3 and oxygen vacancies in the latter. By reducing the thickness of the quantum wells, an enhancement in carrier-carrier scattering is observed, and insulating transport emerges. Consistent with a Mott-driven transition in bulk rare-earth titanates, the insulating behavior is described by activated transport, and the onset of insulating transport occurs near 1 electron per Ti occupation within the SrTiO3 well. We also discuss the role that structure and gradients in strain may play in enhancing the carrier density. The manipulation of metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

cond-mat.mtrl-sci↗

Design of new Mott multiferroics via complete charge transfer: promising candidates for bulk photovoltaics

Optimal materials to induce bulk photovoltaic effects should lack inversion symmetry and have an optical gap matching the energies of visible radiation. Ferroelectric perovskite oxides such as BaTiO$_3$ and PbTiO$_3$ exhibit substantial polarization and stability, but have the disadvantage of excessively large band gaps. We use both density functional theory and dynamical mean field theory calculations to design a new class of Mott multiferroics--double perovskite oxides $A_2$VFeO$_6$ ($A$=Ba, Pb, etc). While neither perovskite $A$VO$_3$ nor $A$FeO$_3$ is ferroelectric, in the double perovskite $A_2$VFeO$_6$ a `complete' charge transfer from V to Fe leads to a non-bulk-like charge configuration--an empty V-$d$ shell and a half-filled Fe-$d$ shell, giving rise to a polarization comparable to that of ferroelectric $A$TiO$_3$. Different from nonmagnetic $A$TiO$_3$, the new double perovskite oxides have an antiferromagnetic ground state and around room temperatures, are paramagnetic Mott insulators. Most importantly, the V $d^0$ state significantly reduces the band gap of $A_2$VFeO$_6$, making it smaller than that of $A$TiO$_3$ and BiFeO$_3$ and rendering the new multiferroics a promising candidate to induce bulk photovoltaic effects.

cond-mat.mtrl-sci↗

Charge transfer driven emergent phenomena in oxide heterostructures

Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we review mechanisms and physical consequence of charge transfer across interfaces in oxide heterostructures. Both theoretical proposals and experimental measurements of various oxide heterostructures are discussed and compared. We also review the theoretical methods that are used to calculate charge transfer across oxide interfaces and discuss the success and challenges in theory. Finally, we present a summary and perspectives for future research.

cond-mat.str-el↗

Phase diagram of Sr$_{1-x}$Ba$_x$MnO$_3$ as a function of chemical doping, epitaxial strain and external pressure

We use \textit{ab initio} calculations to systematically study the phase diagram of multiferroic Sr$_{1-x}$Ba$_x$MnO$_3$ ($0 \leq x \leq 1$) as a function of chemical doping, epitaxial strain and external pressure. We find that by replacing Sr with Ba in cubic SrMnO$_3$ and imposing epitaxial strain, the material can be tuned to the vicinity of a first order transition between two multiferroic phases, one antiferromagnetic with a smaller polarization and one ferromagnetic with a larger polarization. A giant effective magneto-electric coupling and cross-field control (electric field control of magnetism or magnetic field control of polarization) can be achieved in the vicinity of the transition. The dependence of the theoretically computed transition point on the choice of exchange correlation functionals is determined and is found to be non-negligible. We also show that the perovskite structure of BaMnO$_3$ can be stabilized relative to its hexagonal polymorphs at pressures larger than 20 GPa.

cond-mat.mtrl-sci↗

Antisite defects at oxide interfaces

We use \textit{ab initio} calculations to estimate formation energies of cation (transition metal) antisite defects at oxide interfaces and to understand the basic physical effects that drive or suppress the formation of these defects. Antisite defects are found to be favored in systems with substantial charge transfer across the interface, while Jahn-Teller distortions and itinerant ferromagnetism can prevent antisite defects and help stabilize atomically sharp interfaces. Our results enable identification of classes of systems that may be more and less susceptible to the formation of antisite defects and motivate experimental studies and further theoretical calculations to elucidate the local structure and stability of oxide interface systems.

cond-mat.mtrl-sci↗

Spin-density functional theories and their $+U$ and $+J$ extensions: a comparative study of transition metals and transition metal oxides

Previous work on the physical content of exchange correlation functionals that depend on both charge and spin densities is extended to elemental transition metals and a wider range of perovskite transition metal oxides. A comparison of spectra and magnetic moments calculated using exchange correlation functionals depending on charge density only or on both charge and spin densities, as well as the $+U$ and $+J$ extensions of these methods confirms previous conclusions that the spin-dependent part of the exchange correlation functional provides an effective Hund's interaction acting on the transition metal $d$ orbitals. For the local spin density approximation and spin-dependent Perdew-Burke-Ernzerhof generalized gradient approximation, the effective Hund's exchange is found to be larger than 1 eV. The results indicate that at least as far as applications to transition metals and their oxides are concerned, $+U$, $+J$ and +dynamical mean field theory extensions of density functional theory should be based on exchange-correlation functionals of charge density only.

cond-mat.mtrl-sci↗

Charge transfer across transition metal oxide interfaces: emergent conductance and new electronic structure

We perform density functional theory plus dynamical mean field theory calculations to investi- gate internal charge transfer in an artificial superlattice composed of alternating layers of vanadate and manganite perovskite and Ruddlesden-Popper structure materials. We show that the elec- tronegativity difference between vanadium and manganese causes moderate charge transfer from VO2 to MnO2 layers in both perovskite and Ruddlesden-Popper based superlattices, leading to hole doping of the VO2 layer and electron doping of the MnO2 layer. Comparison of the perovskite and Ruddlesden-Popper based heterostructures provides insights into the role of the apical oxy- gen. Our first principles simulations demonstrate that the combination of internal charge transfer and quantum confinement provided by heterostructuring is a powerful approach to engineering electronic structure and tailoring correlation effects in transition metal oxides.

cond-mat.mtrl-sci↗

Dynamical control of orbital occupations via a ferroelectric-induced polar state in metallic manganites

The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering in metal oxides. Here, we show how to dynamically modulate the orbital populations on Mn atoms at ferroelectric/manganite interfaces by switching the ferroelectric polarization. The change in orbital occupation can be as large as 10\%, greatly exceeding that of bulk manganites. This flippable orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use {\it ab initio} theory, epitaxial thin film growth, and scanning transmission electron microscopy to verify the predicted interfacial polar state and concomitant orbital splittings.

cond-mat.mtrl-sci↗

Reversible modulation of orbital occupations via an interface-induced state in metallic manganites

The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering inmetal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroelectric polarization on the nanoscale. The change in orbital occupation can be as large as 10%, greatly exceeding that of bulk manganites. This reversible orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use epitaxial thin film growth and scanning transmission electron microscopy to verify this key interfacial polar distortion and discuss the potential of reversible control of orbital polarization via nanoscale ferroelectrics.

cond-mat.mtrl-sci↗