arXiv subjects

Harshad Surdi

Publications and source records attributed to Harshad Surdi.

10 recordsLinked to original sources

arXiv2026

Diamond Diode for Extreme Venus Environments

A diamond Schottky PIN diode (SPIND) with the highest reported current density to date of ~116 kA/cm2 is demonstrated carrying a total current of ~1.3 A through a 50 micron wide pseudo-vertical diode structure. The diamond SPIND also provides a maximum power handling capacity of 1.85 MW/cm2 and a low specific on-resistance Ron,S of 0.05 mOhm-cm2 at a forward bias of ~16 V. The diamond SPIN diode also shows excellent rectification characteristics with a current on-off ratio of ~6e12. An analytical model including thermionic emission and space charge limited current is presented together with Silvaco ATLAS TCAD simulations, to accurately reproduce the experimental J-V characteristics using multiple single trap levels and other physical models emulating a real device. Theoretical analysis from the analytical models in conjunction with ATLAS simulations shows that further improvement in the device turn on voltage and Ron,S can be achieved by reducing the defect density and contact resistance in order to approach the ultimate performance in the Mott-Gurney space charge limited current regime

cond-mat.mtrl-sci↗

arXiv2021

Excess Noise in High-Current Diamond Diodes -- Physical Mechanisms and Implications for Reliability Assessment

We report results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by generation - recombination noise, which reveals itself either as Lorentzian spectral features or as a 1/f noise spectrum (f is the frequency). The generation - recombination bulges are characteristic for diamond diodes with lower turn-on voltages. The noise spectral density dependence on forward current, I, reveals three distinctive regions in all examined devices - it scales as I^2 at the low (I<10 uA) and high (I>10 mA) currents, and, rather unusually, remain nearly constant at the intermediate current range. The characteristic trap time constants, extracted from the noise data, reveal a uniquely strong dependence on current. Interestingly, the performance of the diamond diodes improves with increasing temperature. The obtained results are important for development of noise spectroscopy-based approaches for device reliability assessment for the high-power diamond electronics.

physics.app-ph↗

arXiv2017

A Superconducting Phase Shifter and Traveling Wave Kinetic Inductance Parametric Amplifier for W-Band Astronomy

The W-Band ($75-110\; \mathrm{GHz}$) sky contains a plethora of information about star formation, galaxy evolution and the cosmic microwave background. We have designed and fabricated a dual-purpose superconducting circuit to facilitate the next generation of astronomical observations in this regime by providing proof-of-concept for both a millimeter-wave low-loss phase shifter, which can operate as an on-chip Fourier transform spectrometer (FTS) and a traveling wave kinetic inductance parametric amplifier (TKIP). Superconducting transmission lines have a propagation speed that depends on the inductance in the line which is a combination of geometric inductance and kinetic inductance in the superconductor. The kinetic inductance has a non-linear component with a characteristic current, $I_*$, and can be modulated by applying a DC current, changing the propagation speed and effective path length. Our test circuit is designed to measure the path length difference or phase shift, $Δϕ$, between two symmetric transmission lines when one line is biased with a DC current. To provide a measurement of $Δϕ$, a key parameter for optimizing a high gain W-Band TKIP, and modulate signal path length in FTS operation, our $3.6 \times 2.5\; \mathrm{cm}$ chip employs a pair of $503\; \mathrm{mm}$ long NbTiN inverted microstrip lines coupled to circular waveguide ports through radial probes. For a line of width $3\; \mathrm{μm}$ and film thickness $20\; \mathrm{nm}$, we predict $Δϕ\approx1767\; \mathrm{rad}$ at $90\; \mathrm{GHz}$ when biased at close to $I_*$. We have fabricated a prototype with $200\; \mathrm{nm}$ thick Nb film and the same line length and width. The predicted phase shift for our prototype is $Δϕ\approx30\; \mathrm{rad}$ at $90\; \mathrm{GHz}$ when biased at close to $I_*$ for Nb.

astro-ph.IM↗

arXiv2016

Polarization Sensitive Multi-Chroic MKIDs

We report on the development of scalable prototype microwave kinetic inductance detector (MKID) arrays tailored for future multi-kilo-pixel experiments that are designed to simultaneously characterize the polarization properties of both the cosmic microwave background (CMB) and Galactic dust emission. These modular arrays are composed of horn-coupled, polarization-sensitive MKIDs, and each pixel has four detectors: two polarizations in two spectral bands between 125 and 280 GHz. A horn is used to feed each array element, and a planar orthomode transducer, composed of two waveguide probe pairs, separates the incoming light into two linear polarizations. Diplexers composed of resonant-stub band-pass filters separate the radiation into 125 to 170 GHz and 190 to 280 GHz pass bands. The millimeter-wave power is ultimately coupled to a hybrid co-planar waveguide microwave kinetic inductance detector using a novel, broadband circuit developed by our collaboration. Electromagnetic simulations show the expected absorption efficiency of the detector is approximately 90%. Array fabrication will begin in the summer of 2016.

astro-ph.IM↗

arXiv2015

Single and multiband THz Metamaterial Polarizers

We report single and multiband linear polarizers for terahertz (THz) frequencies using cut-wire metamaterials (MM). The MMs are designed by finite element method, fabricated by electron beam lithography, and characterized by THz time-domain spectroscopy. The MM unit cells consist of single or multiple length cut-wire pads of gold on semi-insulating Gallium Arsenide for single or multiple band polarizers. The dependence of the resonance frequency of the single band polarizer on the length of the cut-wires is explained based a transmission line model.

physics.optics↗

arXiv2014

A Broadband Dipolar Resonance in THz Metamaterials

We demonstrate a THz metamaterial with broadband dipole resonance originating due to the hybridization of LC resonances. The structure optimized by finite element method simulations is fabricated by electron beam lithography and characterized by terahertz time-domain spectroscopy. Numerically, we found that when two LC metamaterial resonators are brought together, an electric dipole resonance arises in addition to the LC resonances. We observed a strong dependence of the width of these resonances on the separation between the resonators. This dependence can be explained based on series and parallel RLC circuit analogies. The broadband dipole resonance appears when both the resonators are fused together. The metamaterial has a stopband with FWHM of 0.47 THz centered at 1.12 THz. The experimentally measured band features are in reasonable agreement with the simulated ones. The experimental power extinction ratio of THz in the stopbands is found to be 15 dB.

physics.optics↗

arXiv2014

Carbon Irradiated SI-GaAs for Photoconductive THz Detection

We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from ~1012 /cm2 to ~1015 /cm2 the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, resulting in strongly improved THz pulse detection compared with normal SI-GaAs.

cond-mat.mtrl-sci↗

arXiv2013

Highly Efficient and Electrically Robust Carbon Irradiated SI-GaAs Based Photoconductive THz Emitters

We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs substrate with Carbon-ions up to 2 micron deep, we have created lot of defects and decreased the life time of photo-excited carriers inside the substrate. Depending on the irradiation dose we find 1 to 2 orders of magnitude decrease in total current flowing in the substrate, resulting in subsequent decrease of heat dissipation in the antenna. This has resulted in increasing maximum cut-off of the applied voltage across Photo-Conductive Emitter (PCE) electrodes to operate the device without thermal breakdown from ~35 V to > 150 V for the 25 micron electrode gaps. At optimum operating conditions, carbon irradiated (10^14 ions/cm^2) PCEs give THz pulses with power about 100 times higher in comparison to the usual PCEs on SI-GaAs and electrical to THz power conversion efficiency has improved by a factor of ~ 800.

cond-mat.mtrl-sci↗

arXiv2013

Physical, optical and nonlinear properties of InS single crystal

Indium Sulphide (InS) single crystals are successfully grown by In flux. Single crystal X-ray diffraction shows orthorhombic structure of Pnnm space group. Ellipsometry measurements performed on the (010) oriented crystal exhibit low anisotropy in the 300-1000 nm wavelength range and consequently negligible THz emission is observed. Optical band gap of $2.09 eV$ is deduced from linear optical measurements. Nonlinear optical properties are studied by single beam Z-scan measurements at 800 nm, where two-photon absorption is present. Nonlinear refractive index and absorption coefficient are estimated to be $η_2$ = $2.3 10^{-11} cm^2/W$ and $β$= $62.4 cm/ GW$, respectively for excitation intensity of $0.32 GW/cm^2$. The origin of nonlinearity in InS crystal is accounted to be due to the third-order anharmonic motion of the bound electrons.

cond-mat.mtrl-sci↗

arXiv2013

Improved Efficiency of Photoconductive THz Emitters by Increasing the Effective Contact Length of Electrodes

We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We partially etch out 500 nm thick layer of SI-GaAs in grating like pattern with various periods before the contact deposition. By depositing the electrodes on the patterned surface, the electrodes follow the contour of the grating period. This increases the effective contact length of the electrodes per unit area of the active regions on the PCE. The maxima of the electric field amplitude of the THz pulses emitted from the patterned surface are enhanced by up to more than a factor 2 as compared to an un-patterned surface. We attribute this increase to the increase of the effective contact length of the electrode due to surface patterning.

cond-mat.mes-hall↗