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Hartmut G. Roskos

Publications and source records attributed to Hartmut G. Roskos.

23 records · Page 2Linked to original sources

Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization

We investigate ultrafast harmonic generation (HG) in Si:B, driven by intense pump pulses with fields reaching ~100 kV/cm and a carrier frequency of 300 GHz, at 4 K and 300 K, both experimentally and theoretically. We report several novel findings concerning the nonlinear charge carrier dynamics in intense sub-THz fields. (i) Harmonics of order up to n=9 are observed at room temperature, while at low temperature we can resolve harmonics reaching even n=13. The susceptibility per charge carrier at moderate field strength is as high as for charge carriers in graphene, considered to be one of the materials with the strongest sub-THz nonlinear response. (ii) For T=300 K, where the charge carriers bound to acceptors are fully thermally ionized into the valence subbands, the susceptibility values decrease with increasing field strength. Simulations incorporating multi-valence-band Monte-Carlo and finite-difference-time-domain (FDTD) propagation show that here, the HG process becomes increasingly dominated by energy-dependent scattering rates over the contribution from band non-parabolicity, due to the onset of optical-phonon emission, which ultimately leads to the saturation at high fields. (iii) At T=4 K, where the majority of charges are bound to acceptors, we observe a drastic rise of the HG yields for internal pump fields of 30 kV/cm, as one reaches the threshold for tunnel ionization. We disentangle the HG contributions in this case into contributions from the initial 'generational'- and subsequent band-nonlinearities, and show that scattering seriously degrades any coherent recollision during the subsequent oscillation of the holes.

physics.optics↗

Amplitude/Phase Retrieval for Terahertz Holography with Supervised and Unsupervised Physics-Informed Deep Learning

Recently, digital holographic imaging techniques (including methods with heterodyne detection) have found increased attention in the terahertz (THz) frequency range. However, holographic techniques rely on the use of a reference beam in order to obtain phase information. This letter investigates the potential of reference-free THz holographic imaging and proposes novel supervised and unsupervised deep learning (DL) methods for amplitude and phase recovery. The calculations incorporate Fresnel diffraction as prior knowledge. We first show that our unsupervised dual network can predict amplitude and phase simultaneously, thus overcoming the limitation of previous studies which could only predict phase objects. This is demonstrated with synthetic 2D image data as well as with measured 2D THz diffraction images. The advantage of unsupervised DL is that it can be used directly without labeling by human experts. We then address supervised DL -- a concept of general applicability. We introduce training with a database set of 2D images taken in the visible spectra range and modified by us numerically to emulate THz images. With this approach, we avoid the prohibitively time-consuming collection of a large number of THz-frequency images. The results obtained with both approaches represent the first steps towards fast holographic THz imaging with reference-beam-free low-cost power detection.

physics.optics↗

Enhancement of the Monolayer WS2 Exciton Photoluminescence with a 2D-Material/Air/GaP In-Plane Microcavity

Light-matter interaction with two-dimensional materials gained significant attention in recent years leading to the reporting of weak and strong coupling regimes, and effective nano-laser operation with various structures. Particularly, future applications involving monolayer materials in waveguide-coupled on-chip integrated circuitry and valleytronic nanophotonics require controlling, directing and optimizing photoluminescence. In this context, photoluminescence enhancement from monolayer transition-metal dichalcogenides on patterned semiconducting substrates becomes attractive. It is demonstrated in our work using focussed-ion-beam-etched GaP and monolayer WS2 suspended on hexagonal-BN buffer sheets. We present a unique optical microcavity approach capable of both efficient in-plane and out-of-plane confinement of light, which results in a WS2 photoluminescence enhancement by a factor of 10 compared to the unstructured substrate at room temperature. The key concept is the combination of interference effects in both the horizontal direction using a bull's-eye-shaped circular Bragg grating and in vertical direction by means of a multiple reflection model with optimized etch depth of circular air-GaP structures for maximum constructive interference effects of the applied pump and expected emission light.

physics.app-ph↗

Ultrafast dynamic conductivity and scattering rate saturation of photoexcited charge carriers in silicon investigated with a midinfrared continuum probe

We employ ultra-broadband terahertz-midinfrared probe pulses to characterize the optical response of photoinduced charge-carrier plasmas in high-resistivity silicon in a reflection geometry, over a wide range of excitation densities (10^{15}-10^{19} cm^{-3}) at room temperature. In contrast to conventional terahertz spectroscopy studies, this enables one to directly cover the frequency range encompassing the resultant plasma frequencies. The intensity reflection spectra of the thermalized plasma, measured using sum-frequency (up-conversion) detection of the probe pulses, can be modeled well by a standard Drude model with a density-dependent momentum scattering time of approx. 200 fs at low densities, reaching approx. 20 fs for densities of approx. 10^{19} cm^{-3}, where the increase of the scattering rate saturates. This behavior can be reproduced well with theoretical results based on the generalized Drude approach for the electron-hole scattering rate, where the saturation occurs due to phase-space restrictions as the plasma becomes degenerate. We also study the initial sub-picosecond temporal development of the Drude response, and discuss the observed rise in the scattering time in terms of initial charge-carrier relaxation, as well as the optical response of the photoexcited sample as predicted by finite-difference time-domain simulations.

cond-mat.mtrl-sci↗

Determination of the Carrier-Envelope Phase of Few-Cycle Laser Pulses with Terahertz-Emission Spectroscopy

The availability of few-cycle optical pulses opens a window to physical phenomena occurring on the attosecond time scale. In order to take full advantage of such pulses, it is crucial to measure and stabilise their carrier-envelope (CE) phase, i.e., the phase difference between the carrier wave and the envelope function. We introduce a novel approach to determine the CE phase by down-conversion of the laser light to the terahertz (THz) frequency range via plasma generation in ambient air, an isotropic medium where optical rectification (down-conversion) in the forward direction is only possible if the inversion symmetry is broken by electrical or optical means. We show that few-cycle pulses directly produce a spatial charge asymmetry in the plasma. The asymmetry, associated with THz emission, depends on the CE phase, which allows for a determination of the phase by measurement of the amplitude and polarity of the THz pulse.

physics.optics↗