arXiv subjects

Hartmut G. Roskos

Publications and source records attributed to Hartmut G. Roskos.

At least 19 recordsLinked to original sources

arXiv2026

Active Electronic Terahertz Imaging for Industrial Applications: From Hardware to the Paradigm Shift by Artificial Intelligence

Imaging with terahertz (THz) radiation (0.3-10 THz) benefits from a unique combination of attributes: penetration through dry, non-polar packaging materials; variations of dielectric functions to provide contrast; the existence of spectral fingerprint resonances for some classes of materials; non-ionizing photon energies that are safe for use around humans; and - viewed from the low-frequency side - an extension of the capabilities of microwave radar to higher frequencies and thus to substantially better spatial resolution, at wavelengths which still permit direct measurement of the complex-valued radiation field. This review concentrates on active THz imaging with electronic sources combined with power detectors or coherent receivers - the system class most likely to deliver fast (ideally real-time), cost-effective and deployable solutions for a wide range of industrial applications such as quality control, non-destructive testing, security screening and ranging for situational awareness. Such systems should be deployable on robotic and emerging autonomous platforms. We review the state of the art of compact semiconductor detector arrays, of imaging modalities ranging from focused-beam raster and frequency-modulated continuous-wave architectures to coherent Fourier-plane acquisition, and of augmentation techniques such as compressive sensing. Particular attention is paid to the growing role of artificial intelligence: from convolutional neural networks and physics-informed deep learning for phase retrieval and image reconstruction, to agentic frameworks for autonomous system design. The bottlenecks of THz imaging - acquisition speed, resolution, contrast and cost - are re-examined in the light of these innovations, and a reference-anchored technology roadmap is derived which projects an order-of-magnitude reduction in the measurement requirements of THz imaging.

physics.optics↗

arXiv2026

Improving terahertz-detection sensitivity of 8x8 FET arrays through liquid-nitrogen cooling in a compact low-noise cryostat

We show that the sensitivity of antenna-coupled field-effect transistors (FETs) to terahertz (THz) radiation improves continuously with decreasing temperature. The noise-equivalent power (NEP) of 540 GHz patch-antenna-coupled FETs decreases as temperature reduces to 20 K. We project NEP values approaching 1 to 2 pW/sqrt(Hz) under efficient power coupling conditions (e.g., using a superstrate Si-lens), which is comparable to superconducting niobium transition-edge sensors (TESs) at 4 K. Building on these findings, a compact, low-noise, liquid-nitrogen-cooled (77 K) FET-based direct (incoherent) THz-power sensing system} for spectroscopy applications was realized. Here, an 8x8 pixel-binned detector array fabricated in a commercial 65-nm Si-CMOS process, was optimized for operation in the 2.85 to 3.4 THz band. Characterization was performed in the focal plane of a 2.85-THz quantum-cascade laser delivering approx. 2~mW of THz power. A linear dynamic range exceeding 67 dB was achieved without saturation (for 1~Hz-detection bandwidth). The system provides a -3 dB readout bandwidth of 5 MHz, exceeding that of conventional thermal detectors (typically 1 kHz). Combined with its broad temperature operability 20 K to 300 K and compact design, the system is particularly well suited for space- and payload-constrained platforms such as balloon- and satellite-based missions, where deep cryogenic cooling is impractical.

physics.app-ph↗

arXiv2025

2D hydrodynamic simulation of TeraFETs beyond the gradual-channel approximation for transient, large-signal or ultrahigh-frequency simulations

In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs, graphene, etc.) -- has matured and led to a practically applied detector technology. This has been supported by the development of powerful device simulation tools which take into account relevant collective carrier dynamics and mixing processes in various approximations. These tools mostly model carrier transport in 1D and they are usually geared towards continuous-wave illumination of the device and small-signal response. Depending on their implementation, it may not be possible readily to simulate large-signal and pulsed operation. Another approximation which may lead to unsatisfactory results is the 1D restriction to calculate only the longitudinal electric field components. Especially at the edges of the gate electrode, solving of the 2D Poisson equation promises better results. This contribution introduces a stable way to solve the 2D Poisson equation self-consistently with the hydrodynamic transport equations including the numerically challenging convection term. We employ a well-balanced approximate Harten-Lax-van-Leer-Contact Riemann solver. The approach is well suited for a future treatment of transient and large-signal cases. The 2D treatment also generically extends the model beyond the gradual-channel approximation and allows to calculate the FET's response at high THz frequencies where the gate-to-channel potential acquires a non-local character. Model calculations are performed for the exemplary case of a 65-nm Si CMOS TeraFET in the isothermal approximation.

physics.comp-ph↗

arXiv2024

Reconstruction of partially occluded objects with a physics-driven self-training neural network

This study proposes a novel approach utilizing a physics-informed deep learning (DL) algorithm to reconstruct occluded objects in a terahertz (THz) holographic system. Taking the angular spectrum theory as prior knowledge, we generate a dataset consisting of a series of diffraction patterns that contain information about the objects. This dataset, combined with unlabeled data measured from experiments, are used for the self-training of a physics-informed neural network (NN). During the training process, the neural network iteratively predicts the outcomes of the unlabeled data and reincorporates these results back into the training set. This recursive strategy not only reduces noise but also minimizes mutual interference during object reconstruction, demonstrating its effectiveness even in data-scarce situations. The method has been validated with both simulated and experimental data, showcasing its significant potential to advance the field of terahertz three-dimensional (3D) imaging. Additionally, it sets a new benchmark for rapid, reference-free, and cost-effective power detection.

physics.optics↗

arXiv2024

8x8 Patch-Antenna-Coupled TeraFET Detector Array for Terahertz Quantum-Cascade-Laser Applications

Monolithically integrated, antenna-coupled field-effect transistors (TeraFETs) are rapid and sensitive detectors for the terahertz range (0.3-10~THz) that can operate at room temperature. We conducted experimental characterizations of a single patch-antenna coupled TeraFET optimized for 3.4~THz operation and its integration into an 8x8 multi-element detector configuration. In this configuration, the entire TeraFET array operates as a unified detector element, combining the output signals of all detector elements. Both detectors were realized using a mature commercial Si-CMOS 65-nm process node. Our experimental characterization employed single-mode Quantum-Cascade Lasers (QCLs) emitting at 2.85~THz and 3.4~THz. The 8x8 multi-element detector yields two major improvements for sensitive power detection experiments. First, the larger detector area simplifies alignment and enhances signal stability. Second, the reduced detector impedance enabled the implementation of a TeraFET+QCL system capable of providing a -3~dB modulation bandwidth up to 21~MHz, which is currently limited primarily by the chosen readout circuitry. Finally, we validate the system's performance by providing high resolution gas spectroscopy data for methanol vapor around 3.4~THz, where a detection limit of 1.6e-5 absorbance, or 2.6e11~molecules/cm^3 was estimated under optimal coupling conditions.

physics.ins-det↗

arXiv2024

Hybrid Multi-Head Physics-informed Neural Network for Depth Estimation in Terahertz Imaging

Terahertz (THz) imaging is one of the hotspots in the field of optics, where the depth information retrieval is a key factor to restore the three-dimensional appearance of objects. Impressive results for depth extraction in visible and infrared wave range have been demonstrated through deep learning (DL). Among them, most DL methods are merely data-driven, lacking relevant physical priors, which thus request for a large amount of experimental data to train the DL models.However, large training data acquirement in the THz domain is challenging due to the requirements of environmental and system stability, as well as the time-consuming data acquisition process. To overcome this limitation, this paper incorporates a complete physical model representing the THz image formation process into traditional DL networks to retrieve the depth information of objects. The most significant advantage is the ability to use it without pre-training, thereby eliminating the need for tens of thousands of labeled data. Through experiments validation, we demonstrate that by providing diffraction patterns of planar objects with their upper and lower halves individually masked, the proposed physics-informed neural network (NN) can automatically optimize and, ultimately, reconstruct the depth of the object through interaction between the NN and a physical model. The obtained results represent the initial steps towards achieving fast holographic THz imaging using reference-free beams and low-cost power detection.

physics.optics↗

arXiv2024

Si Superstrate Lenses on Patch-Antenna-Coupled TeraFETs: NEP Optimization and Frequency Fine-Tuning

This paper presents a study on performance optimization and resonant frequency modification of terahertz detectors by the use of hyper-hemispherical silicon superstrate lenses. The detectors are patch-TeraFETs, i.e., field-effect transistors with monolithically integrated patch antennas fabricated with a commercial 65-nm CMOS foundry process and designed for an operation frequency of 580 GHz. We demonstrate a strong improvement of the optical noise-equivalent power optical NEP, referenced against the total radiation power) reaching a value of 16 pW/Hz^(1/2). We show, furthermore, that the resonance frequency can be efficiently fine-tuned by the choice of the material and the thickness of a dielectric layer placed between the transistor and the superstrate lens. The resonance frequency can be shifted by more than 15 % of the center frequency (up to 100 GHz for the 580 GHz devices). The design of the on-chip optics can be employed for post-fabrication tailoring of the detector's resonance frequency to target specific spectral positions.

physics.optics↗

arXiv2024

Modeling of antenna-coupled Si MOSFETs in the Terahertz Frequency Range

We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two models -- the TSMC RF foundry model and our own ADS-HDM -- to simulate the Si CMOS TeraFET performance and compare their predictions with respective experimental data. Both models are implemented in the commercial circuit simulation software Keysight Advanced Design System (ADS). We find that the compact model TSMC RF is capable to predict the detector responsivity and its dependence on frequency and gate voltage with good accuracy up to the highest frequency of 1.2 THz covered in this study. This frequency is well beyond the tool's intended operation range for 5G communications and 110-GHz millimeter wave applications. We demonstrate that our self-developed physics-based ADS-HDM tool, which relies on an extended one-dimensional hydrodynamic transport model and can be adapted readily to other material technologies, has high predictive qualities comparable to those of the foundry model. We use the ADS-HDM to discuss the contribution of diffusive and plasmonic effects to the THz response of Si CMOS TeraFETs, finding that these effects, while becoming more significant with rising frequency, are never dominant. Finally, we estimate that the electrical NEP (perfect power coupling conditions) is on the order of 5 pW/$\sqrt{\rm{Hz}}$ at room-temperature.

physics.app-ph↗

arXiv2024

High-power even- and odd mode emission from linear arrays of resonant-tunneling-diode (RTD) oscillators in the 0.4- to 0.8-THz frequency range

Resonant tunneling diode (RTD) oscillators possess the highest oscillation frequency among all electronic THz emitters. However, the emitted power from RTDs remains limited. Here, we propose linear RTD-oscillator arrays capable of supporting coherent emission from both odd and even coupled modes. Both modes exhibit constructive interference in the far field, enabling high power emission. Experimental demonstrations of coherent emission from 11-RTD-oscillator linear arrays are presented. The odd mode oscillates at approximately 450 GHz, emitting about 0.5 mW, while the even mode oscillates at around 750 GHz, emitting about 1 mW. Moreover, certain RTD-oscillator arrays demonstrate dual-band oscillation under different biases, allowing for controllable switching between two coupled modes. In addition, during bias sweeping in both directions, a notable hysteresis feature is observed in the switching bias for the odd and even modes. Our linear RTD-oscillator array represents a significant step forward in the realization of high-power large RTD-oscillator arrays and enables large-scale applications of RTD devices.

physics.optics↗

arXiv2024

Terahertz detection with graphene FETs: photothermoelectric and resistive self-mixing contributions to the detector response

Field-effect transistors coupled to integrated antennas (TeraFETs) are photodetectors being actively developed for the THz frequency range ($\sim$ 100 GHz - 10 THz). Among them, Graphene TeraFETs (G-TeraFETs) have demonstrated distinctive photoresponse features compared to those made from elementary semiconductors. For instance, previous studies have shown that G-TeraFETs exhibit a THz response that comprises two components: the resistive self-mixing (RSM) and photothermoelectric effect (PTE). The RSM and PTE arise from carrier density oscillations and carrier heating, respectively. In this work, we confirm that the photoresponse can be considered a combination of RSM and PTE, with PTE being the dominant rectification mechanism at higher frequencies. For our CVD G-TeraFETs with asymmetric antenna coupling, the PTE response dominates over the RSM at frequencies above 100 GHz. We find that relative contribution of RSM and PTE to the photoresponse is strongly frequency dependent. Electromagnetic wave simulations show that this behavior is due to the relative change in the total dissipated power between the gated and ungated channel regions of the G-TeraFET as the frequency increases. The simulations also indicate that the channel length over which the PTE contributes to the photoresponse below the gate electrode is approximately the same as the electronic cooling length. Finally, we identify a PTE contribution that can be attributed to the contact doping effect in graphene close to the metal contacts. Our detectors achieve a minimum optical noise-equivalent power of 101 (114) pW/$\sqrt{Hz}$ for asymmetric (symmetric) THz antenna coupling conditions at 400 GHz. This work demonstrates how the PTE response can be used to optimize the THz responsivity of G-TeraFETs.

cond-mat.mes-hall↗

arXiv2024

Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors

Frequency-selective or even frequency-tunable Terahertz (THz) photodevices are critical components for many technological applications that require nanoscale manipulation, control and confinement of light. Within this context, gate-tunable phototransistors based on plasmonic resonances are often regarded as the most promising devices for frequency-selective detection of THz fields. The exploitation of constructive interference of plasma waves in such detectors not only promises frequency selectivity, but also a pronounced sensitivity enhancement at the target frequencies. However, clear signatures of plasmon-assisted resonances in THz detectors have been only revealed at cryogenic temperatures so far, and remain unobserved at application-relevant room-temperature conditions. In this work, we demonstrate the sought-after room-temperature resonant detection of THz radiation in short-channel gated photodetectors made from high-quality single-layer graphene. The survival of this intriguing resonant regime at room-temperature ultimately relies on the weak intrinsic electron-phonon scattering in graphene, which avoids the damping of the plasma oscillations.

cond-mat.mes-hall↗

arXiv2023

Interdigitated Terahertz Metamaterial Sensors: Design with the Dielectric Perturbation Theory

Designing terahertz sensors with high sensitivity to detect nanoscale thin films and single biomolecule presents a significant challenge, and addressing these obstacles is crucial for unlocking their full potential in scientific research and advanced applications. This work presents a strategy for the design optimization of metamaterial sensors employed in the detection of small amounts of dielectric materials. The sensors usually utilize the shift of the resonance frequency as an indicator of the presence of the analyte. The amount of shifting depends on intrinsic properties (electric field distribution, quality factor, and mode volume) of the bare cavity, as well as the overlap volume of its high-electric-field zone(s) and the analyte. Guided by the simplified dielectric perturbation theory, interdigitated electric split-ring resonators (ID-eSRR) are devised to significantly enhance the detection sensitivity for thin-film analytes compared to eSRRs without interdigitated fingers in the SRR gap region. The fingers of the ID-eSRR metamaterial sensor redistribute the electric field, creating strongly localized field enhancements that substantially boost the interaction with the analyte. Additionally, the periodic change of the orientation of the inherent anti-phase electric field in the interdigitated structure reduces radiation loss, leading to a higher Q-factor. Experiments with e-beam-fabricated ID-eSRR sensors operating at around 300 GHz demonstrate a remarkable frequency shift of 33.5 GHz upon deposition of a SiO2 layer with a thickness of 150 nm as an analyte simulant. The figure of merit (FOM) improves by over 50 times compared to structures without interdigitated fingers. This rational design option opens a promising avenue for highly sensitive detection of thin films and trace biomolecules.

physics.optics↗

arXiv2023

Ultrafast gap dynamics upon photodoping the Mott-insulating phase of a two-dimensional organic charge-transfer salt

We investigate experimentally the ultrafast changes in the spectral response of the Mott insulator $κ$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Cl ($κ$-Cl) upon photodoping with intense excitation at 1.6 eV and probing with continuum pulses simultaneously covering both the terahertz and infrared (IR) ranges (from 0 to 0.6 eV). A quantitative analysis of the differential reflectivity using a multi-band Lorentzian model provide absolute changes in spectral weights and objective global time constants for the relaxation vs. temperature. The transient conductivity spectra deduced from the analysis suggest that the transient photoinduced spectral weight is dominated by a progressive closure of the Mott gap with increasing excitation density, i.e. due to changes in the inter-Hubbard-band absorption by the remaining singly occupied states. We critically examine this scenario compared to that proposed previously, whereby the low-energy spectral weight is attributed to a Drude-like response of photoexcited doublons/holons. We also consider the observed slowing down of the relaxation rate with increasing excitation density, and temperature dependence of the initial doublon/holon density in terms of the phonon-mediated gap recombination model.

cond-mat.str-el↗

arXiv2023

Colossal magnetoresistance in EuZn$_2$P$_2$ and its electronic and magnetic structure

We investigate single crystals of the trigonal antiferromagnet EuZn$_2$P$_2$ ($P\overline{3}m1$) by means of electrical transport, magnetization measurements, X-ray magnetic scattering, optical reflectivity, angle-resolved photoemission spectroscopy (ARPES) and ab-initio band structure calculations (DFT+U). We find that the electrical resistivity of EuZn$_2$P$_2$ increases strongly upon cooling and can be suppressed in magnetic fields by several orders of magnitude (CMR effect). Resonant magnetic scattering reveals a magnetic ordering vector of $q = (0\, 0\, \frac{1}{2})$, corresponding to an $A$-type antiferromagnetic (AFM) order, below $T_{\rm N} = 23.7\,\rm K$. We find that the moments are canted out of the $a-a$ plane by an angle of about $40^{\circ}\pm 10^{\circ}$ degrees and aligned along the [100] in the $a-a$ plane. We observe nearly isotropic magnetization behavior for low fields and low temperatures which is consistent with the magnetic scattering results. The magnetization measurements show a deviation from the Curie-Weiss behavior below $\approx 150\,\rm K$, the temperature below which also the field dependence of the material's resistivity starts to increase. An analysis of the infrared reflectivity spectrum at $T=295\,\rm K$ allows us to resolve the main phonon bands and intra-/interband transitions, and estimate indirect and direct band gaps of $E_i^{\mathrm{opt}}=0.09\,\rm{eV}$ and $E_d^{\mathrm{opt}}=0.33\,\rm{eV}$, respectively, which are in good agreement with the theoretically predicted ones. The experimental band structure obtained by ARPES is nearly $T$-independent above and below $T_{\rm N}$. The comparison of the theoretical and experimental data shows a weak intermixing of the Eu 4$f$ states close to the $Γ$ point with the bands formed by the phosphorous 3$p$ orbitals leading to an induction of a small magnetic moment at the P sites.

cond-mat.str-el↗

arXiv2023

Collective modes in the charge-density wave state of K$_{0.3}$MoO$_3$: The role of long-range Coulomb interactions revisited

We re-examine the effect of long-range Coulomb interactions on the collective amplitude and phase modes in the incommensurate charge-density-wave ground state of quasi-one-dimensional conductors. Using an effective action approach we show that the longitudinal acoustic phonon protects the gapless linear dispersion of the lowest phase mode in the presence of long-range Coulomb interactions. Moreover, in Gaussian approximation, amplitude fluctuations are not affected by long-range Coulomb interactions. We also calculate the collective mode dispersions at finite temperatures and compare our results with the measured energies of amplitude and phase modes in K$_{0.3}$MoO$_3$. With the exception of the lowest phase mode, the temperature dependence of the measured mode energies can be quantitatively described within a multi-phonon Fröhlich model for generic electron-phonon interactions neglecting long-range Coulomb interactions.

cond-mat.str-el↗

arXiv2023

Strong coupling of plasmonic bright and dark modes with two eigenmodes of a photonic crystal cavity

Dark modes represent a class of forbidden transitions or transitions with weak dipole moments between energy states. Due to their low transition probability, it is difficult to realize their interaction with light, let alone achieve the strong interaction of the modes with the photons in a cavity. However, by mutual coupling with a bright mode, the strong interaction of dark modes with photons is possible. This type of mediated interaction is widely investigated in the metamaterials community and is known under the term electromagnetically induced transparency (EIT). Here, we report strong coupling between a plasmonic dark mode of an EIT-like metamaterial with the photons of a 1D photonic crystal cavity in the terahertz frequency range. The coupling between the dark mode and the cavity photons is mediated by a plasmonic bright mode, which is proven by the observation of a frequency splitting which depends on the strength of the inductive interaction between the plasmon bright and dark modes of the EIT-like metamaterial. In addition, since the plasmonic dark mode strongly couples with the cavity dark mode, we observes four polariton modes. The frequency splitting by interaction of the four modes (plasmonic bright and dark mode and the two eigenmodes of the photonic cavity) can be reproduced in the framework of a model of four coupled harmonic oscillators.

physics.optics↗

arXiv2023

600-GHz Fourier Imaging Based on Heterodyne Detection at the 2nd Sub-harmonic

Fourier imaging is an indirect imaging method which records the diffraction pattern of the object scene coherently in the focal plane of the imaging system and reconstructs the image using computational resources. The spatial resolution, which can be reached, depends on one hand on the wavelength of the radiation, but also on the capability to measure - in the focal plane - Fourier components with high spatial wave-vectors. This leads to a conflicting situation at THz frequencies, because choosing a shorter wavelength for better resolution usually comes at the cost of less radiation power, concomitant with a loss of dynamic range, which limits the detection of higher Fourier components. Here, aiming at maintaining a high dynamic range and limiting the system costs, we adopt heterodyne detection at the 2nd sub-harmonic, working with continuous-wave (CW) radiation for object illumination at 600 GHz and local-oscillator (LO) radiation at 300 GHz. The detector is a single-pixel broad-band Si CMOS TeraFET equipped with substrate lenses on both the front- and backside for separate in-coupling of the waves. The entire scene is illuminated by the object wave, and the Fourier spectrum is recorded by raster scanning of the single detector unit through the focal plane. With only 56 uW of power of the 600-GHz radiation, a dynamic range of 60 dB is reached, sufficient to detect the entire accessible Fourier space spectrum in the test measurements. A lateral spatial resolution of better than 0.5 mm, at the diffraction limit, is reached.

physics.optics↗

arXiv2023

Combined investigation of collective amplitude and phase modes in a quasi-one-dimensional charge-density-wave system over a wide spectral range

We investigate experimentally both the amplitude and phase channels of the collective modes in the quasi-1D charge-density-wave (CDW) system, K0.3MoO3, by combining (i) optical impulsive-Raman pump-probe and (ii) terahertz time-domain spectroscopy (THz-TDS), with high resolution and a detailed analysis of the full complex-valued spectra in both cases. This allows an unequivocal assignment of the observed bands to CDW modes across the THz range up to 9 THz. We revise and extend a time-dependent Ginzburg-Landau model to account for the observed temperature dependence of the modes, where the combination of both amplitude and phase modes allows one to robustly determine the bare-phonon and electron-phonon coupling parameters. While the coupling is indeed strongest for the lowest-energy phonon, dropping sharply for the immediately subsequent phonons, it grows back significantly for the higher-energy phonons, demonstrating their important role in driving the CDW formation. We also include a reassessment of our previous analysis of the lowest-lying phase modes, whereby assuming weaker electronic damping for the phase channel results in a qualitative picture more consistent with quantum-mechanical treatments of the collective modes, with a strongly coupled amplitudon and phason as the lowest modes.

cond-mat.str-el↗