arXiv subjects

Heidemarie Schmidt

Publications and source records attributed to Heidemarie Schmidt.

18 recordsLinked to original sources

arXiv2024

Evaluating the transport properties of interface-type, analog memristors

Interface-type, analog memristors have quite a reputation for real-time applications in edge sensorics, edge computing, and neuromorphic computing. The n-type conducting BiFeO3 (BFO) is such an interface-type, analog memristor which is also nonlinear and can therefore not only store, but also process data in the same memristor cell without data transfer between the data storage unit and the data processing unit. Here we present a physical memristor model which describes the hysteretic current-voltage curves of the BFO memristor in the small and large current-voltage range. Extracted internal state variables are reconfigured by the ion drift in the two write branches and are determining the electron transport in the two read branches. Simulation of electronic circuits with the BFO interface-type, analog memristors was not possible so far because previous physical memristor models have not captured the full range of internal state variables. We show quantitative agreement between modeled and experimental current-voltage curves exemplarily of three different BFO memristors in the small and large current-voltage ranges. Extracted dynamic and static internal state variables in the two full write branches and in the two full read branches, respectively, can be used for simulating electronic circuits with BFO memristors, e.g. in edge sensorics, edge computing, and neuromorphic computing.

cond-mat.dis-nn↗

arXiv2024

Prospects for non-linear memristors as so-far missing core hardware element for transferless data computing and storage

We like and need Information and Communications Technologies (ICT) for data processing. This is measureable in the exponential growth of data processed by ICT, e.g. ICT for cryptocurrency mining and search engines. So far, the energy demand for computing technology has increased by a factor of 1.38 every ten years due to the exponentially increasing use of ICT systems as computing devices. The energy consumption of ICT systems is expected to rise from 1500 TWh (8% of global electricity consumption) in 2010 to 5700 TWh (14% of global electricity consumption) in 2030. A large part of this energy is required for the continuous data transfer between the separated memory and processor units which constitute the main components of ICT computing devices in von-Neumann architecture. This at the same time massively slows down the computing power of ICT systems in the von-Neumann architecture. In addition, due to the increasing complexity of AI compute algorithms, since 2010 the AI training compute time demand for computing technology increases tenfold every year, for example in the period from 2010 to 2020 from 1x10^{-6} to 1x10^{+4} Petaflops/Day. It has been theoretically predicted that ICT systems in the neuromorphic computer architecture will circumvent all of this through the use of merged memory and processor units. However, the core hardware element for this has not yet been realized so far. In this work we discuss the prespectives for non-linear resistive switches as the core hardware element for merged memory and processor units in neuromorphic computers.

cs.ET↗

arXiv2023

Power-balanced Memristive Cryptographic Implementation Against Side Channel Attacks

Memristors, as emerging nano-devices, offer promising performance and exhibit rich electrical dynamic behavior. Having already found success in applications such as neuromorphic and in-memory computing, researchers are now exploring their potential for cryptographic implementations. In this study, we present a novel power-balanced hiding strategy utilizing memristor groups to conceal power consumption in cryptographic logic circuits. Our approach ensures consistent power costs of all 16 logic gates in Complementary-Resistive-Switching-with-Reading (CRS-R) logic family during writing and reading cycles regardless of Logic Input Variable (LIV) values. By constructing hiding groups, we enable an effective power balance in each gate hiding group. Furthermore, experimental validation of our strategy includes the implementation of a cryptographic construction, xor4SBox, using NOR gates. The circuit construction without the hiding strategy and with the hiding strategy undergo T-test analysis, confirming the significant improvement achieved with our approach. Our work presents a substantial advancement in power-balanced hiding methods, offering enhanced security and efficiency in logic circuits.

cs.CR↗

arXiv2022

Heavily doped zinc oxide with plasma frequencies in the telecommunication wavelength range

We demonstrate heavy and hyper doping of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser-annealing process enables dopant activation close to or beyond the solid-solubility limit of Ga in ZnO. We achieved heavily doped ZnO:Ga with free-carrier concentrations of ~10^21 cm^(-3), resulting in a plasma wavelength of 1.02 um, which is substantially shorter than the telecommunication wavelength of 1.55 um. Thus, our approach enables the control of the plasma frequency of ZnO from the far infrared down to 1.02 um, providing a promising plasmonic material for applications in this regime.

physics.app-ph↗

arXiv2020

Synchronous single-photon detection with self-resetting GHz-gated superconducting NbN nanowires

We demonstrate a GHz-gated operation of resonator-coupled superconducting nanowire single-photon detectors suitable for synchronous applications. In comparison with conventional dc-biased nanowire detectors, this method prevents the detector from latching and can suppress dark counts and background noise. Using a gating frequency of 3.8 GHz and a fast, synchronized laser diode, we show that the detector's operation point follows the oscillating current and its detection efficiency depends on the relative frequency and phase of the bias and modulated optical signal. The obtained experimental results are in good agreement with simulations, showing that the duty cycle of a gated detector can be adjusted in a wide range in case of a pronounced saturation of the current-dependent detection efficiency. This operation mode could be suitable for applications such as quantum key distribution and time-of-flight laser ranging.

physics.ins-det↗

arXiv2019

Nanowire single-photon detectors made of atomic layer-deposited niobium nitride

We demonstrate and characterize first superconducting nanowire single-photon detectors (SNSPDs) made from atomic layer-deposited (ALD) NbN layers. To assess the suitability of these films as a detector material, transport properties of bare films and bridges of different dimensions and thicknesses are investigated. Similar ratios of the measured critical current to the depairing current are obtained for micro-bridges made from ALD and sputtered NbN films. Furthermore, we characterized the single-photon response for 5 and 10 nm-thick nanowire detectors. A 100 nm-wide straight nanowire with a length of 5 $μ$m exhibits saturated count-rate dependencies on bias current and a cut-off wavelength in the near-infrared range. The ALD technique could open up the possibility to fabricate NbN-based detectors on the wafer scale and to conformally cover also non-planar surfaces for novel device concepts.

physics.ins-det↗

arXiv2012

Substrate effect on the resistive switching in BiFeO3 thin films

BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors.

cond-mat.mtrl-sci↗

arXiv2011

Control of rectifying and resistive switching behavior in BiFeO3 thin films

BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ~4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention.

cond-mat.mtrl-sci↗

arXiv2011

Reduced leakage current in BiFeO3 thin films with rectifying contacts

BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops.

cond-mat.mtrl-sci↗

arXiv2011

Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude. The resistive switching is understood by the electric field - induced carriers trapping and detrapping, which changes the depletion layer thickness at the Au/BiFeO3 interface.

cond-mat.mtrl-sci↗

arXiv2011

Decisive role of oxygen vacancy in ferroelectric vs. ferromagnetic Mn-doped BaTiO3 thin films

Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Compared to undoped BaTiO3, Mn-doped BaTiO3 reveals a low leakage current, increased dielectric loss, and a decreased dielectric constant. Ferromagnetism is seen on Mn-doped BaTiO3 thin films prepared under low oxygen partial pressure and is attributed to the formation of bound magnetic polarons (BMPs). This BMP formation is enhanced by oxygen vacancies. The present work confirms a theoretical work from C. Ederer and N. Spaldin on ferroelectric perovskites [Nature Mat. 3, 849 (2004)] which shows that the existence of ferroelectricity is incompatible with the existence of a spontaneous magnetization in Mn-doped BaTiO3 thin films.

cond-mat.mtrl-sci↗

arXiv2010

The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge

In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10^18 to 2.1x10^20 cm^-3, the latter being the highest reported so far. Based on the magnetotransport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferromagnetism in magnetic Ge.

cond-mat.mtrl-sci↗

arXiv2010

Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism

We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two orders of magnitude from 10$^{18}$ to over 10$^{20}$ cm$^{-3}$. Likely due to the high hole concentration, we observe that the longitudinal and Hall resistances exhibit the same hysteresis as the magnetization, which is usually considered as a sign of carrier-mediated ferromagnetism.

cond-mat.mtrl-sci↗

arXiv2009

Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix

Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the inter-particle interaction through the Mn-diluted Ge matrix.

cond-mat.mtrl-sci↗

arXiv2009

Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations

Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usually, the reported AHE (1) is observable at temperatures above 10 K, (2) exhibits no hysteresis, and (3) changes the sign of slope. We observed a similar Hall resistance in Mn implanted Ge with the Mn concentration as low as 0.004%. We show that the puzzling AHE features can be explained by considering a two-band-like conduction in Ge:Mn.

cond-mat.mtrl-sci↗

arXiv2009

Spin-dependent transport in nanocomposite C:Co films

The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 degC. Two major effects are reported: (i) a large anomalous Hall effect amounting to 2 μohm cm, and (ii) a negative magnetoresistance. Both the field-dependent resistivity and Hall resistivity curves coincide with the rescaled magnetization curves, a finding that is consistent with spin-dependent transport. These findings suggest that C:Co nanocomposites are promising candidates for carbon-based Hall sensors and spintronic devices.

cond-mat.mtrl-sci↗

arXiv2008

Ferromagnetic, structurally disordered ZnO implanted with Co ions

We present superparamagnetic clusters of structurally highly disordered Co-Zn-O created by high fluence Co ion implantation into ZnO (0001) single crystals at low temperatures. This secondary phase cannot be detected by common x-ray diffraction but is observed by high-resolution transmission electron microscopy. In contrast to many other secondary phases in a ZnO matrix it induces low-field anomalous Hall effect and thus is a candidate for magneto-electronics applications.

cond-mat.mtrl-sci↗

arXiv2008

Room temperature ferromagnetism in carbon-implanted ZnO

Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.

cond-mat.mtrl-sci↗