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arXiv · 1005.4325

The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge

Shengqiang Zhou·Danilo Bürger·Wolfgang Skorupa·Peter Oesterlin·Manfred Helm·Heidemarie Schmidt
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Abstract

In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10^18 to 2.1x10^20 cm^-3, the latter being the highest reported so far. Based on the magnetotransport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferromagnetism in magnetic Ge.

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Shengqiang Zhou, Danilo Bürger, Wolfgang Skorupa, Peter Oesterlin, Manfred Helm, Heidemarie Schmidt. 2010-05-24. The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge. https://doi.org/10.1063/1.3428770

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