arXiv subjects

Heiko B. Weber

Publications and source records attributed to Heiko B. Weber.

26 records · Page 2Linked to original sources

arXiv2016

Light-field driven currents in graphene

Ultrafast electron dynamics in solids under strong optical fields has recently found particular attention. In dielectrics and semiconductors, various light-field-driven effects have been explored, such as high-harmonic generation, sub-optical-cycle interband population transfer and nonperturbative increase of transient polarizability. In contrast, much less is known about field-driven electron dynamics in metals because charge carriers screen an external electric field in ordinary metals. Here we show that atomically thin monolayer Graphene offers unique opportunities to study light-field-driven processes in a metal. With a comparably modest field strength of up to 0.3 V/Å, we drive combined interband and intraband electron dynamics, leading to a light-field-waveform controlled residual conduction current after the laser pulse is gone. We identify the underlying pivotal physical mechanism as electron quantum-path interference taking place on the 1-femtosecond ($10^{-15}$ second) timescale. The process can be categorized as Landau-Zener-Stückelberg interferometry. These fully coherent electron dynamics in graphene take place on a hitherto unexplored timescale faster than electron-electron scattering (tens of femtoseconds) and electron-phonon scattering (hundreds of femtoseconds). These results broaden the scope of light-field control of electrons in solids to an entirely new and eminently important material class -- metals -- promising wide ramifications for band structure tomography and light-field-driven electronics.

physics.optics↗

arXiv2013

The detection of Kondo effect in the resistivity of graphene: artifacts and strategies

We discuss the difficulties to discover Kondo effect in the resistivity of graphene. Similarly to the Kondo effect, electron-electron interaction effects and weak localization appear as logarithmic corrections to the resistance. In order to disentangle these contributions, a refined analysis of the magnetoconductance and the magnetoresistance is introduced. We present numerical simulations which display the discrimination of both effects. Further, we present experimental data of magnetotransport. When magnetic molecules are added to graphene, a logarithmic correction to the conductance occurs, which apparently suggests Kondo physics. Our thorough evaluation scheme, however, reveals that this interpretation is not conclusive: the data can equally be explained by electron-electron interaction corrections in an inhomogeneous sample. Our evaluation scheme paves the way for a more refined search for the Kondo effect in graphene.

cond-mat.mes-hall↗

arXiv2012

Experimental Evidence for Quantum Interference and Vibrationally Induced Decoherence in Single-Molecule Junctions

We analyze quantum interference and decoherence effects in single-molecule junctions both experimentally and theoretically by means of the mechanically controlled break junction technique and density-functional theory. We consider the case where interference is provided by overlapping quasi-degenerate states. Decoherence mechanisms arising from the electronic-vibrational coupling strongly affect the electrical current flowing through a single-molecule contact and can be controlled by temperature variation. Our findings underline the all-important relevance of vibrations for understanding charge transport through molecular junctions.

cond-mat.mes-hall↗

arXiv2012

Manifestation of electron-electron interaction in the magnetoresistance of graphene

We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization the observed temperature-dependent parabolic magnetoresistivity (MR) is a manifestation of the electron-electron interaction (EEI). We can consistently describe the data with a model for diffusive (magneto)transport that also includes magnetic-field dependent effects originating from ballistic time scales. We find an excellent agreement between the experimentally observed temperature dependence of MR and the theory of EEI in the diffusive regime. We can further assign a temperature-driven crossover to the reduction of the multiplet modes contributing to EEI from 7 to 3 due to intervalley scattering. In addition, we find a temperature independent ballistic contribution to the MR in classically strong magnetic fields.

cond-mat.mes-hall↗

arXiv2011

Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide

We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic temperature operation. Depending on implantation dose and temperature we operate in two gating regimes. In the first, the gating mechanism is similar to a MOSFET, the second is based on a tuned space charge region of the silicon carbide semiconductor. We present a detailed model that describes the two gating regimes and the transition in between.

cond-mat.mtrl-sci↗

arXiv2010

Resonant vibrations, peak broadening and noise in single molecule contacts: beyond the resonant tunnelling picture

We carry out experiments on single-molecule junctions at low temperatures, using the mechanically controlled break junction technique. Analyzing the results received with more than ten different molecules the nature of the first peak in the differential conductance spectra is elucidated. We observe an electronic transition with a vibronic fine structure, which is most frequently smeared out and forms a broad peak. In the usual parameter range we find strong indications that additionally fluctuations become active even at low temperatures. We conclude that the electrical field feeds instabilities, which are triggered by the onset of current. This is underscored by noise measurements that show strong anomalies at the onset of charge transport.

cond-mat.mes-hall↗

arXiv2009

How Graphene-like is Epitaxial Graphene? \\Quantum Oscillations and Quantum Hall Effect

We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size and a Shubnikov-de Haas effect with a Landau level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially, and the graphene-like quantum Hall effect occurs. This proves that epitaxial graphene is ruled by the same pseudo-relativistic physics observed previously in exfoliated graphene.

cond-mat.mes-hall↗

arXiv2008

Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers

We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis.

cond-mat.mtrl-sci↗