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arXiv · 0808.1222

Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers

Konstantin V. Emtsev·Aaron Bostwick·Karsten Horn·Johannes Jobst·Gary L. Kellogg·Lothar Ley·Jessica L. McChesney·Taisuke Ohta·Sergey A. Reshanov·Eli Rotenberg·Andreas K. Schmid·Daniel Waldmann·Heiko B. Weber·Thomas Seyller
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Abstract

We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis.

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Konstantin V. Emtsev, Aaron Bostwick, Karsten Horn, Johannes Jobst, Gary L. Kellogg, Lothar Ley, Jessica L. McChesney, Taisuke Ohta, Sergey A. Reshanov, Eli Rotenberg, Andreas K. Schmid, Daniel Waldmann, Heiko B. Weber, Thomas Seyller. 2008-08-08. Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers. https://arxiv.org/abs/0808.1222

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