arXiv subjects

Hidefumi Akiyama

Publications and source records attributed to Hidefumi Akiyama.

At least 19 recordsLinked to original sources

arXiv2026

Fast and wide-range wavelength tuning of a III-V/Si3N4 external-cavity laser via two-step pulsed heating

Fast and wide-range wavelength switching is desirable for optical communications and photonic systems that are frequency-agile. However, thermo-optic (TO)-tuned integrated lasers often have limited switching times and tuning rates. This study demonstrates a hybrid-integrated III-V/Si3N4 external-cavity laser (ECL), combining a dual-microring Vernier filter with thermal pumping to give wide-range and fast wavelength control. The ECL provides single-mode static lasing wavelength tuning in the 1486-1614 nm range. Impulsive thermal pumping that is applied through microheaters with shorter duration and higher amplitude accelerates the switching time. A simple first-order thermal fit reproduces the measurements well, indicating that the TO-tuning dynamics are highly predictable. Consequently, two-step pulse thermal pumping is applied to the on-chip microheaters to exploit the initial quasi-linear heating transient and sustain the target wavelength at a subsequent equilibrium. The results show that 101 and 104 nm red- and blue-shift switches are achieved with quasi-linear tuning rates of 8.91 and 9.68 nm/us, respectively. This approach provides a practical route toward fast wavelength switching in TO-tuned ECLs, potentially extending their applicability within frequency-agile systems, such as wavelength-division multiplexed transceivers.

physics.optics↗

arXiv2026

Signature of inverse orbital Hall effect in silicon studied using time-resolved terahertz polarimetry

We investigated the anomalous Hall conductivity induced in silicon by circularly polarized light at room temperature using near-infrared (NIR) pump-terahertz (THz) probe spectroscopy. The time-resolved detection scheme eliminates the large nonlinear current generated by the field-induced circular photogalvanic effect, allowing exclusive observation of a long-lived anomalous Hall conductivity of photocarriers that depends on the helicity of NIR light. The magnitude of this conductivity is comparable to that of GaAs despite silicon's much weaker spin-orbit coupling, and its robustness against NIR photon energy rules out a spin-polarization-based origin, which occurs only in the vicinity of the bandgap. These results suggest the emergence of the inverse orbital Hall effect, paving the way for silicon-based orbitronics.

cond-mat.mes-hall↗

arXiv2026

Few-picosecond pulse generation featuring ultrafast spectral dynamics in gain-switched surface-grating DFB lasers via impulsive optical pumping

To investigate the physics of picosecond gain-switching dynamics in single-mode lasers under femtosecond optical pumping at room temperature, we designed and fabricated first-order surface-grating GaAs distributed-feedback (DFB) lasers with five systematically varied grating periods (120-124 nm), corresponding to lasing wavelengths of 825.7-849.5 nm (1.502-1.459 eV). The 124-nm-period device, closest to the quantum-well gain peak among the investigated devices, exhibited the highest output power and spectral bandwidth. Among all devices, the 122-nm-period DFB laser (838.2 nm, 1.480 eV) generated the shortest pulses, despite lasing at a higher photon energy and lower output power than the device closest to the gain peak. All devices exhibited characteristic down-chirp behavior that increased with excitation power. The shortest pulses had a chirped pulse width of 6.6 ps and a chirp rate of 0.13 meV/ps, whereas spectrally resolved measurements revealed a minimum pulse width of 3.8 ps (2.3 ps after deconvolution of the detection time resolution) near the central photon energy of the pulse spectrum. Numerical simulations revealed temporally and spatially resolved dynamics of photons, carriers, gain, and refractive index, reproducing the experimental results qualitatively and quantitatively. Furthermore, a mechanism for generating the shortest pulses at photon energies above the gain peak was identified and attributed to higher differential gain, saturation gain, and a higher transparency carrier density in the high-energy region of the gain spectrum. These experimental and theoretical results elucidate the intrinsic dynamics of picosecond pulse generation in gain-switched DFB lasers and provide design guidance for short-pulse generation and computational tools applicable to both optical and electrical pumping.

physics.optics↗

arXiv2025

Light-induced inverse spin Hall effect and field-induced circular photogalvanic effect in GaAs revealed by two-dimensional terahertz Fourier analysis

The electromotive force transverse to a bias field under irradiation of circularly polarized light, namely the photovoltaic Hall response or light-induced anomalous Hall effect, has attracted considerable attention to investigate the topologically nontrivial states in Floquet engineering and the inverse spin Hall effect of spin-polarized carriers in spintronics. However, taking into account inversion symmetry breaking by the bias field, the circularly polarized light can excite photocarriers with asymmetric momentum distribution, which generates injection current transverse to the bias field. Therefore, the field-induced circular photogalvanic effect (FI-CPGE) should also emerge in the very same experimental configuration for light-induced anomalous Hall effect but has been overlooked in literature. In this work, using terahertz pulses as a bias field for a semiconductor GaAs, we conduct two-dimensional Fourier analysis and demonstrate that FI-CPGE can play a major role in the photovoltaic Hall response. Counterintuitively, FI-CPGE is significantly enhanced when the photocarriers are excited near the bandgap with small density of states and low group velocity, which can be explained by a three-level resonant nonlinear interaction near the band degeneracy point. We also clarified that FI-CPGE would be further largely detected in the contact-type measurement using electrodes because of the absence of a filtering effect inherent to terahertz pulses. This work provides a comprehensive, generalized view of the photovoltaic Hall response in biased materials, paving a new avenue for detecting topological monopoles in momentum space hidden in equilibrium using third-order nonlinear responses.

cond-mat.mtrl-sci↗

arXiv2025

Robust asynchronous optical sampling terahertz spectroscopy using commercially available free-running lasers

This study presents asynchronous optical sampling (ASOPS) terahertz spectroscopy using commercially available Ti:Sapphire lasers without stabilizing repetition frequency. Our postprocessing algorithm using the multiplied repetition frequency difference as the calibration signal successfully corrected the jitter, thereby allowing broadband (2.5 THz) spectroscopy with a high spectral resolution (82 MHz). The robustness of the jitter correction based on the free-running laser setup and broadband electric circuits was rigorously examined under varying temperatures, thereby demonstrating reliable long-term operations over 60 h. This study expands the applicability of the ASOPS terahertz time-domain spectroscopy.

physics.optics↗

arXiv2024

Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection

We report the first observation of the spin Hall conductivity spectrum in GaAs at room temperature. Our terahertz polarimetry with a precision of several $μ$rads resolves the Faraday rotation of terahertz pulses arising from the inverse spin Hall effect of optically injected spin-polarized electrons. The obtained spin Hall conductivity spectrum exhibits an excellent quantitative agreement with theory, demonstrating a crossover in the dominant origin from impurity scattering in the DC regime to the intrinsic Berry-curvature mechanism in the terahertz regime. Our spectroscopic technique opens a new pathway to analyze anomalous transports related to spin, valley, or orbital degrees of freedom.

cond-mat.mtrl-sci↗

arXiv2023

Shear-Strain Controlled High-Harmonic Generation in Graphene

We propose a novel method for controlling the high-harmonic generation (HHG) with a high dynamic range in single-layer graphene. We find that, by utilizing shear strain, a significant enhancement or quenching of HHG is possible over a range of several orders of magnitude. This feature is made possible by the resonance mechanism at a van Hove singularity. Therein, the shear strain controls the configurations of the two Dirac cones, resulting in changes in the energy and dipole moment at the saddle point of the band dispersion. Our findings provide a way for modulating or switching light by using a nano-optomechanical device composed of single-layer graphene.

cond-mat.mes-hall↗

arXiv2021

Unidirectional output from a quantum-dot single-photon source hybrid integrated on silicon

We report a quantum-dot single-photon source (QD SPS) hybrid integrated on a silicon waveguide embedding a photonic crystal mirror, which reflects photons and enables efficient unidirectional output from the waveguide. The silicon waveguide is constituted of a subwavelength grating so as to maintain the high efficiency even under the presence of stacking misalignment accompanied by hybrid integration processes. Experimentally, we assembled the hybrid photonic structure by transfer printing, and demonstrated single-photon generation from a QD and its unidirectional output from the waveguide. These results point out a promising approach toward scalable integration of SPSs on silicon quantum photonics platforms.

physics.optics↗

arXiv2020

High-harmonic generation in GaAs beyond the perturbative regime

We experimentally study the field-intensity dependence of high-harmonic generation in bulk gallium arsenide in reflection geometry. We find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between the experiment and theory indicates that field-induced dynamic band modification is crucial in the nonperturbative regime. We consider the origin of the oscillatory behavior in terms of dynamical localization based on the Floquet subband picture.

cond-mat.mes-hall↗

arXiv2019

In-situ wavelength tuning of quantum-dot single-photon sources integrated on a CMOS silicon chip

Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs pose a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a new hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in-situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from the dissimilar sources. Here, we demonstrate in-situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in-situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology.

physics.app-ph↗

arXiv2019

"Visible" 5d orbital states in a pleochroic oxychloride

Transition metal compounds sometimes exhibit beautiful colors. We report here on a new oxychloride Ca3ReO5Cl2 which shows unusually distinct pleochroism; that is, the material exhibits different colors depending on viewing directions. This ple-ochroism is a consequence of the fact that a complex crystal field splitting of the 5d orbitals of the Re6+ ion in a square-pyramidal coordination of low-symmetry occurs accidentally in the energy range of the visible light spectrum. Since the rele-vant d-d transitions possess characteristic polarization dependences according to the optical selection rule, the orbital states are "visible" in Ca3ReO5Cl2.

cond-mat.str-el↗

arXiv2018

Quantum-dot single-photon source on a CMOS silicon photonic chip integrated using transfer printing

Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs), because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for quantum photonic information processing (or the so-called silicon quantum photonics) provides a promising pathway for large-scale quantum applications. For the development of scalable silicon quantum PICs, a major challenge is integrating on-silicon quantum light sources that deterministically emit single photons. In this regard, the use of epitaxial InAs/GaAs quantum dots (QDs) is a very promising approach, because of their capability of deterministic single-photon emission with high purity and indistinguishability. However, the required hybrid integration is inherently difficult and often lacks the compatibility with CMOS processes. Here, we demonstrate a QD single-photon source (SPS) integrated on a glass-clad silicon photonic waveguide processed by a CMOS foundry. Hybrid integration is performed using transfer printing, which enables us to integrate heterogeneous optical components in a simple pick-and-place manner and thus assemble them after the entire CMOS process is completed. We observe single-photon emission from the integrated QD and its efficient coupling into the silicon waveguide. Our transfer-printing-based approach is fully compatible with CMOS back-end processes, and thus will open the possibility for realizing large-scale quantum PICs that leverage CMOS technology.

physics.app-ph↗

arXiv2018

Nonequilibrium theory of the conversion-efficiency limit of solar cells including thermalization and extraction of carriers

The ideal solar cell conversion efficiency limit known as the Shockley-Queisser (SQ) limit, which is based on a detailed balance between absorption and radiation, has long been a target for solar cell researchers. While the theory for this limit uses several assumptions, the requirements in real devices have not been discussed fully. Given the current situation in which research-level cell efficiencies are approaching the SQ limit, a quantitative argument with regard to these requirements is worthwhile in terms of understanding of the remaining loss mechanisms in current devices and the device characteristics of solar cells that are operating outside the detailed balance conditions. Here we examine two basic assumptions: (1) that the photo-generated carriers lose their kinetic energy via phonon emission in a moment (fast thermalization), and (2) that the photo-generated carriers are extracted into carrier reservoirs in a moment (fast extraction). Using a model that accounts for the carrier relaxation and extraction dynamics, we reformulate the nonequilibrium theory for solar cells in a manner that covers both the equilibrium and nonequilibrium regimes. Using a simple planar solar cell as an example, we address the parameter regime in terms of the carrier extraction time and then consider where the conventional SQ theory applies and what could happen outside the applicable range.

physics.app-ph↗

arXiv2006

Determination and Spectroscopy of Quantum Yields in Bio/Chemiluminescence via Novel Light-Collection-Efficiency Calibration: Reexamination of The Aqueous Luminol Chemiluminescence Standard

We have developed a luminescence-measurement system for liquid bio/chemiluminescence that can obtain quantitative luminescence spectra as the absolute total number of luminescence photons at each wavelength or photon energy and quantum yields. Calibration of light-collection efficiency in the system is performed with a reference double-plate cell. This method is applicable to sample cells of any kind suitable for measurement, which is a great advantage over previous techniques in practical experiments. Using this system, the quantum yield of aqueous luminol chemiluminescence was obtained as 1.23-+0.20%, which is in good agreement with previously reported values.

q-bio.QM↗

arXiv2005

Room-temperature excitonic absorption in quantum wires

We measured absorption spectra of T-shaped quantum wires at room temperature using waveguide-transmission spectroscopy. Strong and narrow room-temperature one-dimensional-exciton absorption peak was observed, which shows peak modal absorption coefficient of 160 cm$^{-1}$ per 20 wires with $Γ$-factor of $4.3\times10^{-3}$, width of 7.2 meV, and strong polarization anisotropy.

cond-mat.mes-hall↗

arXiv2005

Evolution of excitons via biexcitons to an electron-hole plasma without level crossing between band edge and exciton in a quantum wire

A recent single quantum wire is of sufficient quality to reveal new details of the photoluminescence (PL) evolution with increasing electron--hole (e--h) pair density. At a pair density of 3.6 $\times$ 10$^{3}$ cm$^{-1}$, the PL is characteristic of biexcitons shifted below the exciton peak by the 2.8-meV biexciton binding. At the pair density of 1.2 $\times$ 10$^{5}$ cm$^{-1}$, the biexciton peak broadens without energy shift to an e--h plasma. At all pair densities up to 30 K, neither the exciton peak nor the one-dimensional (1D) continuum edge shows any shift. In contrast to prevailing theories, the low-energy edge of the plasma PL line never crosses the exciton peak and never makes contact with the 1D e--h continuum.

cond-mat.mes-hall↗

arXiv2005

Strong photo-absorption by a single quantum wire in waveguide-transmission spectroscopy

We measured the absorption spectrum of a single T-shaped, 14x6 nm lateral-sized quantum wire embedded in an optical waveguide using waveguide-transmission spectroscopy at 5 K. In spite of its small volume, the one-dimensional-exciton ground state shows a large absorption coefficient of 80 /cm, or a 98 % absorption probability for a single pass of the 500-um-long waveguide.

cond-mat.other↗

arXiv2004

Intersubband electronic Raman scattering in narrow GaAs single quantum wells dominated by single-particle excitations

We measured resonant Raman scattering by intersubband electronic excitations in GaAs/AlAs single quantum wells (QWs) with well widths ranging from 8.5 to 18 nm. In narrow (less than 10 nm) QWs with sufficiently high electron concentrations, only single-particle excitations (SPEs) were observed in intersubband Raman scattering, which was confirmed by the well-width dependence of Raman spectra. We found characteristic variations in Raman shift and line shape for SPEs with incident photon energy in the narrow QWs.

cond-mat.other↗