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arXiv · 2004.04492

High-harmonic generation in GaAs beyond the perturbative regime

Peiyu Xia·Tomohiro Tamaya·Changsu Kim·Faming Lu·Teruto Kanai·Nobuhisa Ishii·Jiro Itatani·Hidefumi Akiyama·Takeo Kato
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Abstract

We experimentally study the field-intensity dependence of high-harmonic generation in bulk gallium arsenide in reflection geometry. We find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between the experiment and theory indicates that field-induced dynamic band modification is crucial in the nonperturbative regime. We consider the origin of the oscillatory behavior in terms of dynamical localization based on the Floquet subband picture.

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Peiyu Xia, Tomohiro Tamaya, Changsu Kim, Faming Lu, Teruto Kanai, Nobuhisa Ishii, Jiro Itatani, Hidefumi Akiyama, Takeo Kato. 2020-04-09. High-harmonic generation in GaAs beyond the perturbative regime. https://doi.org/10.1103/physrevb.104.l121202

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