arXiv subjects

Hideo Hosono

Publications and source records attributed to Hideo Hosono.

At least 73 records · Page 4Linked to original sources

arXiv2016

Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO$_3$

The high room temperature mobility and the electron effective mass in BaSnO$_3$ are investigated in depth by evaluation of the free carrier absorption observed in infrared spectra for epitaxial films with free electron concentrations from $8.3 \times 10^{18}$ to $7.3 \times 10^{20}$~cm$^{-3}$. Both the optical band gap widening by conduction band filling and the carrier scattering mechanisms in the low and high doping regimes are consistently described employing parameters solely based on the intrinsic physical properties of BaSnO$_3$. The results explain the current mobility limits in epitaxial films and demonstrate the potential of BaSnO$_3$ to outperform established wide band gap semiconductors also in the moderate doping regime.

cond-mat.mtrl-sci↗

arXiv2016

Enhanced critical-current in P-doped BaFe2As2 thin films on metal substrates arising from poorly aligned grain boundaries

Thin films of the iron-based superconductor BaFe2(As1-xPx)2 (Ba122:P) were fabricated on polycrystalline metal-tape substrates with two kinds of in-plane grain boundary alignments (well aligned (4 deg.) and poorly aligned (8 deg.)) by pulsed laser deposition. The poorly aligned substrate is not applicable to cuprate-coated conductors because the in-plane alignment >4 deg. results in exponential decay of the critical current density (Jc). The Ba122:P film exhibited higher Jc at 4 K when grown on the poorly aligned substrate than on the well-aligned substrate even though the crystallinity was poorer. It was revealed that the misorientation angles of the poorly aligned samples were less than 6 deg., which are less than the critical angle of an iron-based superconductor, cobalt-doped BaFe2As2 (~9 deg.), and the observed strong pinning in the Ba122:P is attributed to the high-density grain boundaries with the misorientation angles smaller than the critical angle. This result reveals a distinct advantage over cuprate-coated conductors because well-aligned metal-tape substrates are not necessary for practical applications of the iron-based superconductors.

cond-mat.supr-con↗

arXiv2016

Heavy Electron doping-induced antiferromagnetic phase as the parent for iron-oxypnictide superconductor LaFeAsO1-xHx

We perform transport measurements and band structure calculations of electron-doped LaFeAsO1-xHx over a wide range of x from 0.01 to 0.66. The T^2 and sqrt(T) dependency of the resistivity are observed at x ~ 0.17 and 0.41, respectively. The sign change of RH without opening of the spin-density-wave gap for 0.45 < x < 0.58 and T < TN as well as the calculated non-nested Fermi surface at x = 0.5 indicate the more localized nature of the AF2 as compared to spin density wave phase at non-doped sample. Considering the results from band calculations and the finite size of Hund' s rule coupling, the change of the normal conducting state with x is reasonably explained by a strong depression of the coherent scale owing to the increased effective Coulomb repulsion in the narrow anti-bonding 3dxy band that approaches the half-filled regime. The following transition from the paramagnet to AF2 is understood as the quenching or ordering of the less-screened spins with a large entropy at low temperature. These results suggest that the normal conducting properties over a wide doping range for the LaFeAsO1-xHx are strongly influenced by the local spins in the incoherent region. Thus, we conclude that the parent phase in LaFeAsO1-xHx is not the spin-density wave but the AF2, which may be primarily responsible for the singular superconducting properties of the 1111 type compared with other iron pnictides.

cond-mat.supr-con↗

arXiv2016

Semimetallic "Electride Bands" Derived from Interlayer Electrons in Quasi-Two-Dimensional Electride Y$_2$C

Two-dimensional (2D) electrides are a new concept material in which anionic electrons are confined in the interlayer space between positively charged layers. We have performed angle-resolved photoemission spectroscopy measurements on Y$_2$C, which is a possible 2D electride, in order to verify the formation of 2D electride states in Y$_2$C. We clearly observe the existence of semimetallic "electride bands" near the Fermi level, as predicted by ${ab}$ ${initio}$ calculations, conclusively demonstrating that Y$_2$C is a quasi-2D electride with electride bands derived from interlayer anionic electrons.

cond-mat.mtrl-sci↗

arXiv2016

Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe2As2

We propose a novel solid-phase epitaxy technique applicable to high annealing temperatures up to 1000 C without re-vaporization of alkali metal elements with high vapor pressures. This technique is demonstrated through the successful growth of high-quality KFe2As2 epitaxial films. The key factors are employing a custom-designed alumina vessel/cover and sealing it in a stainless tube with a large amount of atmospheric KFe2As2 powder in tightly closed sample spaces. This technique can also be effective for other materials composed of elements with very high vapor pressures, such as alkali metals, and can lead to the realization of spintronics devices in the future using KFe2As2.

cond-mat.mtrl-sci↗

arXiv2016

Electric field-induced superconducting transition of insulating FeSe thin film at 35 K

It is thought that strong electron correlation in an insulating parent phase would enhance a critical temperature (Tc) of superconductivity in a doped phase via enhancement of the binding energy of a Cooper pair as known in high-Tc cuprates. To induce a superconductor transition in an insulating phase, injection of a high density of carriers is needed (e.g., by impurity doping). An electric double-layer transistor (EDLT) with an ionic liquid gate insulator enables such a field-induced transition to be investigated and is expected to result in a high Tc because it is free from deterioration in structure and carrier transport that are in general caused by conventional carrier doping (e.g., chemical substitution). Here, for insulating epitaxial thin films (~10 nm thick) of FeSe, we report a high Tc of 35 K, which is four times higher than that of bulk FeSe, using an EDLT under application of a gate bias of +5.5 V. Hall effect measurements under the gate bias suggest that highly accumulated electron carrier in the channel, whose area density is estimated to be 1.4x10^15 cm-2 (the average volume density of 1.7x10^21 cm-3), is the origin of the high-Tc superconductivity. This result demonstrates that EDLTs are useful tools to explore the ultimate Tc for insulating parent materials.

cond-mat.supr-con↗

arXiv2015

Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains

In quasi-one-dimensional (quasi-1D) system, the charge density wave (CDW) transition temperature TCDW is usually lower than the mean-field-theory predicted TMF and a CDW fluctuation region exists between them. Here, we investigate the physical properties of PdTeI single crystal containing quasi-1D PdTe chains. Surprisingly, we find that the carrier concentration decreases gradually before the long-range CDW ordering state occurring at T1 ~ 110 K, reflecting the existence of strong CDW fluctuation with possible pseudogap state at T >> T1 because of dynamic charge separation of Pd ions (Pd3+ -> Pd2+ + Pd4+). Moreover, the sliding CDW state appears below T2 ~ 6 K. Combined such low T2 with the feature of multiple quasi-1D bands, PdTeI exhibits exotic crossover behavior from negative to huge positive magnetoresistance under magnetic field and field-induced localization. Thus, PdTeI provides a novel platform for studying the CDW fluctuation and the interplay between magnetic field and CDW state.

cond-mat.str-el↗

arXiv2015

Hydrogen-substituted superconductors SmFeAsO1-xHx misidentified as oxygen-deficient SmFeAsO1-x

We investigated the preferred electron dopants at the oxygen sites of 1111-type SmFeAsO by changing the atmospheres around the precursor with the composition of Sm:Fe:As:O = 1:1:1:1-x in high-pressure synthesis. Under H2O and H2 atmospheres, hydrogens derived from H2O or H2 molecules were introduced into the oxygen sites as a hydride ion, and SmFeAsO1-xHx was obtained. However, when the H2O and H2 sources were removed from the synthetic process, nearly stoichiometric SmFeAsO was obtained and the maximum amount of oxygen vacancies introduced remained x = 0.05(4). Density functional theory calculations indicated that substitution of hydrogen in the form of H- is more stable than the formation of an oxygen vacancy at the oxygen site of SmFeAsO. These results strongly imply that oxygen-deficient SmFeAsO1-x reported previously is SmFeAsO1-xHx with hydride ion incorporated unintentionally during high-pressure synthesis.

cond-mat.supr-con↗

arXiv2015

Ferromagnetic instability of interlayer floating electrons in quasi-two-dimensional electride Y$_2$C

Ab initio electronic structure calculations show that the recently identified quasi-two-dimensional electride Y$_2$C is a weak itinerant ferromagnet or at least close to a ferromagnetic instability. The ferromagnetism is induced by the electride electrons, which are loosely bound around interstitial sites and overlap with each other to form two-dimensional interlayer conduction bands. The semimetallicity and two-dimensionality of the band structure are the key to understanding this ferromagnetic instability.

cond-mat.mtrl-sci↗

arXiv2015

Intrinsic defects in photovoltaic perovskite variant Cs2SnI6

Note: This paper has been published in Physical Chemistry Chemical Physics, which can be viewed at the following URL: http://doi.org/10.1039/C5CP03102H Cs2SnI6, a rarely studied perovskite variant material, is recently gaining a lot of interest in the field of photovoltaics owing to its nontoxity, air-stability and promissing photovoltaic properties. In this work, we report intrinsic defects in Cs2SnI6 using first-principles density functional theory calculations. It is revealed that iodine vacancy and tin interstitial are the dominant defects that are responsible for the intrinsic n-type conduction in Cs2SnI6. Tin vacancy has a very high formation energy (>3.6 eV) due to the strong covalency in the Sn-I bonds and is hardly generated for p-type doping. All the dominant defects in Cs2SnI6 have deep transition levels in the band gap. It is suggested that the formation of the deep defects can be suppressed significantly by employing an I-rich synthesis condition, which is inevitable for photovoltaic and other semiconductor applications.

physics.comp-ph↗

arXiv2015

Ligand-Hole in SnI6 Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6

This paper has been published in Bulletin of the Chemical Society of Japan, which can be viewed at the following URL: http://doi.org/10.1246/bcsj.20150110 Cs2SnI6, a variant of perovskite CsSnI3, is expected for a photovoltaic material. Based on a simple ionic model, it is expected that Cs2SnI6 is composed of Cs+, I-, and Sn4+ ions and that the band gap is primarily made of occupied I- 5p6 valence band maximum (VBM) and unoccupied Sn4+ 5s conduction band minimum (CBM) similar to SnO2. In this work, we performed density functional theory (DFT) calculations and revealed that the real oxidation state of the Sn ion in Cs2SnI6 is +2 similar to CsSnI3. The +2 oxidation state of Sn originates from 2 ligand holes in the [SnI6]2- octahedron unit, where the ligand [I6] cluster has the apparent [I66-L+2]4- oxidation state, because the band gap is formed mainly by occupied I 5p VBM and unoccupied I 5p CBM. The +2 oxidation state of Sn and the band gap are originated from the intracluster hybridization and stabilized by the strong covalent interaction between Sn and I.

physics.chem-ph↗

arXiv2015

Exploration of new superconductors and functional materials and fabrication of superconducting tapes and wires of iron pnictides

This paper reviews the highlights of a 4-years-long research project supported by the Japanese Government to explore new superconducting materials and relevant functional materials. The project found several tens of new superconductors by examining ~1000 materials, each of which was chosen by Japanese team member experts with a background in solid state chemistry. This review summarizes the major achievements of the project in newly found superconducting materials, and the wire and tape fabrication of iron-based superconductors. It is a unique feature of this review to incorporate a list of ~700 unsuccessful materials examined for superconductivity in the project. In addition, described are new functional materials and functionalities discovered during the project.

cond-mat.supr-con↗

arXiv2015

Iron-Based Superconductors: current status of materials and pairing mechanism

Since the discovery of high Tc iron-based superconductors in early 2008, more than 15,000 papers have been published as a result of intensive research. This paper describes the current status of iron-based superconductors (IBSC) covering most up-to-date research progress along with the some background research, focusing on materials (bulk and thin film) and pairing mechanism.

cond-mat.supr-con↗

arXiv2015

Narrow Bandgap in beta-BaZn2As2 and Its Chemical Origins

Beta-BaZn2As2 is known to be a p-type semiconductor with the layered crystal structure similar to that of LaZnAsO, leading to the expectation that beta-BaZn2As2 and LaZnAsO have similar bandgaps; however, the bandgap of beta-BaZn2As2 (previously-reported value ~0.2 eV) is one order of magnitude smaller than that of LaZnAsO (1.5 eV). In this paper, the reliable bandgap value of beta-BaZn2As2 is determined to be 0.23 eV from the intrinsic region of the tem-perature dependence of electrical conductivity. The origins of this narrow bandgap are discussed based on the chemi-cal bonding nature probed by 6 keV hard X-ray photoemission spectroscopy, hybrid density functional calculations, and the ligand theory. One origin is the direct As-As hybridization between adjacent [ZnAs] layers, which leads to a secondary splitting of As 4p levels and raises the valence band maximum. The other is that the non-bonding Ba 5dx2-y2 orbitals form unexpectedly deep conduction band minimum (CBM) in beta-BaZn2As2 although the CBM of LaZnAsO is formed mainly of Zn 4s. These two origins provide a quantitative explanation for the bandgap difference between beta-BaZn2As2 and LaZnAsO.

physics.chem-ph↗

arXiv2015

n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route

Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure, but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In this work, carrier polarity conversion to n-type was achieved by isovalent ion substitution for polycrystalline SnS thin films on glass substrates. Substituting Pb2+ for Sn2+ converted the majority carrier from hole to electron, and the free electron density ranged from 1012 to 1015 cm-3 with the largest electron mobility of 7.0 cm2/(Vs). The n-type conduction was confirmed further by the position of the Fermi level (EF) based on photoemission spectroscopy and electrical characteristics of pn heterojunctions. Density functional theory calculations reveal that the Pb substitution invokes a geometrical size effect that enlarges the interlayer distance and subsequently reduces the formation energies of Sn and Pb interstitials, which work as electron donors.

cond-mat.mtrl-sci↗

arXiv2015

Superconductivity in Room Temperature Stable electride and high-pressure phases of alkali metals

S-band metals such as alkali and alkaline earth metals do not undergo a superconducting transition (SCT) at an ambient pressure, but their high-pressure phases do. In contrast, room temperature stable electride electride (C12A7:e-) in which anionic electrons in the crystallographic sub-nanometer-size cages have high s-character exhibits SCT at 0.2-0.4K at an ambient pressure. In this paper we report that crystal and electronic structure of C12A7:e- are close to those of the high pressure superconducting phase of alkali and alkaline earth metals and the SCT of both materials is induced when electron nature at Fermi energy (EF) switches from s- to sd-hybridized state.

cond-mat.supr-con↗

arXiv2015

Superconductivity at 52 K in hydrogen-substituted LaFeAsO1-xHx under high pressure

The 1111-type iron-based superconductor LnFeAsO1-xFx (Ln stands for lanthanide) is the first material with a Tc above 50 K, other than cuprate superconductors. Electron doping into LaFeAsO by H, rather than F, revealed a double-dome-shaped Tc-x diagram, with a first dome (SC1, 0.05 50 K observed in RE-1111 compounds (RE: Pr, Sm, and Gd) at ambient pressure is the merging of SC1 and SC2.

cond-mat.supr-con↗

arXiv2014

Emergence of magnetism and controlling factors of superconductivity in Li/Na-ammonia co-intercalated FeSe1-zTez

The discovery of superconductivity in alkali-ammonia co-intercalated FeSe has generated intensive interest because of their highest Tc (~ 45 K) among iron-chalcogenide superconductors with bulk form. Here, we report the phase diagrams of two series of Li/Na-ammonia co-intercalated FeSe1-zTez. When superconductivity is suppressed by Te doping, the magnetic ordering states are emergent. Moreover, a novel phase Lix(NH3)yFe2-δTe2 with possible antiferromagnetism is discovered. This strongly indicates the intimate relation between superconductivity and magnetism in these materials, like in other iron-based superconductors. On the other hand, comparative structure analysis with FeSe1-zTez suggests that although there is remarkable similarity in phase diagrams for both iron-chalcogenide and iron-pnictide superconductors, the different types of anions with different charges lead to the dissimilar controlling factors in superconductivity for both classes of materials. This opens up an opportunity to tune the superconductivity in iron-chalcogenide superconductors in more ways than just one.

cond-mat.supr-con↗