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Hideo Hosono

Publications and source records attributed to Hideo Hosono.

At least 109 records · Page 6Linked to original sources

Superconductivity induced by hydrogen anion substitution in 1111-type iron arsenides

Hydrogen is the simplest bipolar element and its valence state can be controlled from +1 to -1. We synthesized the 1111-type CaFeAsH and LnFeAsO1-xHx (Ln = lanthanide) with the ZrCuSiAs type structure by a high-pressure synthesis method. The position and valence state of the substituted H were determined by neutron diffraction and density functional theory calculations. The close similarity in the structural and electrical properties of CaFeAsH and CaFeAsF indicated the formation of the hydride ion (H-), which is isovalent with the fluoride ion (F-), in the 1111-type iron arsenides. When some of the O2- ions in LnFeAsO are replaced by H-, superconductivity is induced by electron doping to the FeAs-layer to maintain charge neutrality. Since the substitution limit of hydrogen in LnFeAsO (x~0.5) is much higher than that of fluorine (x~0.2), the hydrogen substitution technique provides an effective pathway for high-density electron-doping, making it possible to draw the complete electronic phase diagram of LnFeAsO. The x-T diagrams of LnFeAsO1-xHx (Ln = La, Ce, Sm, Gd) have a wide superconducting (SC) region spanning the range x = 0.04 to 0.4, which is far from the parent antiferromagnetic region near x = 0.0. For Ln=La, another SC dome region was found in the range x = ~ 0.2 to ~0.5 with a maximum Tc = 36 K, in addition to a conventional SC dome located at x ~0.08 with maximum Tc = 29 K. Density functional theory calculations performed for LaFeAsO1-xHx indicated that the newly observed Tc is correlated with the appearance of degeneration of the Fe 3d bands (dxy, dyz and dzx), which is caused not only by regularization of the tetrahedral shape of FeAs4 due to chemical pressure effects but also by selective band occupation with doped electrons. In this article, we review the recent progress of superconductivity in iron (oxy)arsenides and related compounds induced by hydrogen substitution.

cond-mat.supr-con↗

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2 epitaxial film with a high critical current density over 1 MA/cm2

The mixed-state Hall effect was examined in a Ba(Fe1-xCox)2As2 epitaxial film with a high critical current density. The transverse resistivity ρxy and the longitudinal resistivity ρxx follow power law scaling ρxy = Aρxxβ. In the temperature-sweep with a fixed field (T sweep), all of the β values are independent of magnetic field up to 9 T, and are lower than 2.0 (around 1.8). In contrast, the β values in the magnetic-field sweep with a fixed temperature (H sweep) change from 1.8 to 2.0 as the temperature increases from 13 to 16 K even in the T/H region that overlaps with the T sweep measurements. These results indicate that the vortices introduced at low temperatures are trapped by strong pinning centers, but a portion of the vortices introduced at high temperatures are not strongly trapped by the pinning centers. The sign of ρxy is negative, and a sign reversal is not detected. These distinct scaling behaviors, which sharply contrast cuprates and MgB2, are explained by high-density c-axis pinning centers in the Ba(Fe1-xCox)2As2 epitaxial film and are consistent with a wider vortex liquid phase.

cond-mat.supr-con↗

Superconducting Properties and Phase Diagram of Indirectly Electron-Doped (Sr1-xLax)Fe2As2 Epitaxial Films Grown by Pulsed Laser Deposition

A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions. The maximum critical temperature was 20.8 K, which is almost the same as that of directly electron-doped Sr(Fe1-xCox)2As2. Its electronic phase diagram is much similar to that of Sr(Fe1-xCox)2As2, indicating that the difference in the electron doping sites does not influence the superconducting properties of 122-type SrFe2As2.

cond-mat.supr-con↗

Tc Maximum in Solid Solution of Pyrite IrSe2-RhSe2 Induced by Destabilization of Anion Dimers

We have established a well-defined dome shape Tc curve in Ir0.94-xRhxSe2 superconductors. The maximum Tconset of 9.6K was obtained at x=0.36, at which the Se-Se separation in the dimer anion is the longest. Simultaneously, the destabilization of Se-Se dimers accompanied by partial elec-tron-transfer from the Ir/Rh to the chalcogenide ions result-ed in the emergence of optimal Tc.

cond-mat.supr-con↗

Superconductivity in defective pyrite-type iridium chalcogenides IrxCh2 (Ch = Se and Te)

We report superconductivity in defective pyrite-type iridium chalcogenides IrxCh2. Maximum values of Tc of 6.4 K for Ir0.91Se2 and 4.7 K for Ir0.93Te2 were observed. It was found that Ir0.75Ch2 is close to the boundary between metallic and insulating states and IrxCh2 systems undergo nonmetal to metal transitions as x increases. On the basis of density functional theory calculations and the observed large variation in the Ch-Ch distance with x, we suggest that Ir0.75Ch2 is the parent compound for the present superconductors.

cond-mat.supr-con↗

Ferroelectricity Driven by Twisting of Silicate Tetrahedral Chains

Conventional perovskite-type ferroelectrics are based on octahedral units of oxygen, and often comprise toxic Pb to achieve robust ferroelectricity. Here, we report the ferroelectricity in a silicate-based compound, Bi2SiO5 (BSO), induced by a structural instability of the corresponding silicate tetrahedral chains. A low-energy phonon mode condenses at ~ 673 K to induce the proper ferroelectric phase transition. Polarization switching was observed in a BSO single crystal with a coercive field of 30 kV/cm and a spontaneous polarization of 0.3 microC/cm2 along a direction normal to the cleavage plane. The in-plane polarization was estimated by first principles calculations to be 23 microC/cm2. The present findings provide a new guideline for designing ferroelectric materials based on SiO4 tetrahedral units, which is ubiquitously found in natural minerals.

cond-mat.mtrl-sci↗

Two-dome structure in electron-doped iron arsenide superconductors

Iron arsenide superconductors based on the material LaFeAsO1-xFx are characterized by a two-dimensional Fermi surface (FS) consisting of hole and electron pockets yielding structural and antiferromagnetic transitions at x = 0. Electron doping by substituting O2- with F- suppresses these transitions and gives rise to superconductivity with a maximum Tc = 26 K at x = 0.1. However, the over-doped region cannot be accessed due to the poor solubility of F- above x = 0.2. Here we overcome this problem by doping LaFeAsO with hydrogen. We report the phase diagram of LaFeAsO1-xHx (x < 0.53) and, in addition to the conventional superconducting dome seen in LaFeAsO1-xFx, we find a second dome in the range 0.21 < x < 0.53, with a maximum Tc of 36 K at x = 0.3. Density functional theory calculations reveal that the three Fe 3d bands (xy, yz, zx) become degenerate at x = 0.36, whereas the FS nesting is weakened monotonically with x. These results imply that the band degeneracy has an important role to induce high Tc.

cond-mat.supr-con↗

Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe1--xCox)2As2 (AE = alkaline earth)

This paper reports comprehensive results on thin-film growth of 122-type iron-pnictide superconductors, AE(Fe1-xCox)2As2 (AE = Ca, Sr, and Ba, AEFe2As2:Co) by a pulsed laser deposition method using a neodymium-doped yttrium aluminum garnet laser as an excitation source. The most critical parameter to produce the SrFe2As2:Co and BaFe2As2:Co phases is the substrate temperature (Ts). It is difficult to produce highly-pure CaFe2As2:Co phase thin film at any Ts. For BaFe2As2:Co epitaxial films, controlling Ts at 800-850 °C and growth rate to 2.8-3.3 Å/s produced high-quality films with good crystallinity, flat surfaces, and high critical current densities > 1 MA/cm2, which were obtained for film thicknesses from 100 to 500 nm. The doping concentration x was optimized for Ba(Fe1-xCox)2As2 epitaxial films, leading to the highest critical temperature of 25.5 K in the epitaxial films with the nominal x = 0.075.

cond-mat.supr-con↗

Identical effects of indirect and direct electron doping of superconducting BaFe2As2 thin films

Electron doping of a 122-type iron pnictide BaFe2As2 by substituting the Ba site with an aliovalent ion (indirect doping), which had been unsuccessful by conventional solid-state synthesis methods, was achieved by a non-equilibrium film growth process. The substitution with La was substantiated by a systematic shrinkage of the c-axis lattice parameter due to the smaller ionic radius of La3+ than that of Ba2+. A negative Hall coefficient indicated that the majority carriers were electrons, as is consistent with this aliovalent ion doping. The La substitution suppressed an antiferromagnetic transition and induced bulk superconductivity at a maximum onset critical temperature (Tc) of 22.4 K. The electronic phase diagram for (Ba1-xLax)Fe2As2 was built, which revealed that the indirect electron doping at the Ba site with La [(Ba1-xLax)Fe2As2] exhibits almost the same Tc - doping level relation as that of the direct electron-doping at the Fe site with Co [Ba(Fe1-xCox)2As2]. This finding clarified that Tc in 122-type compounds is not affected by a crystallographic doping site, which is in sharp contrast to the 1111-type compounds, REFeAsO (RE = rare earth). It is tentatively attributed to the differences in their dimensionality of electronic structures and electron pairing symmetries.

cond-mat.supr-con↗

Enhanced anisotropic spin fluctuations below tetragonal-to-orthorhombic transition in LaFeAs(O_{1-x}F_x) probed by ^{75}As and ^{139}La NMR

$^{75}$As and $^{139}$La NMR results of LaFeAs(O$_{1-x}$F$_x$) ($x$=0, 0.025, and 0.04) were reported. Upon F-doping, the tetragonal-to-orthorhombic structural phase transition temperature $T_S$, antiferromagnetic transition temperature $T_N$ and internal magnetic field $μ_0H_{\rm int}$ are gradually reduced for $x<0.04$. However, at $x=0.04$, $T_N$ is abruptly suppressed to be 30 K along with a tiny $μ_0H_{\rm int}$, which is distinct from the continuous disappearance of the ordered phases in the Ba122 systems of Ba(Fe,Co)$_2$As$_2$ and BaFe$_2$(As,P)$_2$. The anisotropy of the spin-lattice relaxation rate $T_1^{-1}$, $(T_1)^{-1}_{H\parallel ab}/(T_1)^{-1}_{H\parallel c}$, in the paramagnetic phase of $x = 0$ and 0.025 is constant ($\sim 1.5$), but increases abruptly below $T_S$ due to the enhancement of $(T_1)^{-1}_{H\parallel ab}$ by the slowing down of magnetic fluctuations. This indicates that the tetragonal-to-orthorhombic structural distortion enhances the anisotropy in the spin space via magnetoelastic coupling and/or spin-orbit interaction.

cond-mat.str-el↗

Ultralow-dissipative conductivity by Dirac fermions in BaFe$_2$As$_2$

We report on the anomalous behavior of the complex conductivity of BaFe$_{2}$As$_{2}$, which is related to the Dirac cone, in the terahertz (THz)-frequency region. Above the spin-density-wave (SDW) transition temperature, the conductivity spectra follow the Drude model. In the SDW state, the imaginary part of the complex conductivity, $σ_2$, is suppressed in comparison to that expected according to the Drude model. The real part, $σ_1$, exhibits nearly Drude-like behavior. This behavior (i.e., almost no changes in $σ_1$ and the depression of $σ_2$) can be regarded as the addition of extra conductivity without any dissipations in the Drude-type conductivity. The origin of this ultralow-dissipative conductivity is found to be due to conductivity contribution from quasiparticles within the Dirac cone. In other words, we are able to observe the dynamics of Dirac fermions through the conductivity spectra of BaFe$_2$As$_2$, clearly and directly.

cond-mat.supr-con↗

Unusually large enhancement of thermopower in an electric field induced two-dimensional electron gas

Two-dimensionally confined electrons showing unusually large thermopower (S) have attracted attention as a potential approach for developing high performance thermoelectric materials. However, enhanced S has never been observed in electric field induced two-dimensional electron gas (2DEG). Here we demonstrate electric field modulation of S for a field effect transistor (FET) fabricated on a SrTiO3 crystal using a water-infiltrated nanoporous glass as the gate insulator. An electric field application confined carrier electrons up to ~2E15 /cm^2 in an extremely thin (~2 nm) 2DEG. Unusually large enhancement of |S| was observed when the sheet carrier concentration exceeded 2.5E14 /cm^2, and it modulated from ~600 (~2E15 /cm^2) to ~950 μV/K (~8E14 /cm^2), which were approximately five times larger than those of the bulk, clearly demonstrating that an electric field induced 2DEG provides unusually large enhancement of |S|.

cond-mat.mtrl-sci↗

Thin Film Growth and Device Fabrication of Iron-Based Superconductors

Iron-based superconductors have received much attention as a new family of high-temperature superconductors owing to their unique properties and distinct differences from cuprates and conventional superconductors. This paper reviews progress in thin film research on iron-based superconductors since their discovery for each of five material systems with an emphasis on growth, physical properties, device fabrication, and relevant bulk material properties.

cond-mat.supr-con↗

La2Sb, a layered superconductor with metal-metal bonds

We found La2Sb with a layered structure composed of alternate stacking of La square nets and LaSb layers exhibits bulk superconductivity with a critical temperature of 5.3 K. This suggests that the presence of the square net with strong La-La metal bonding is essential for the emergence of superconductivity.

cond-mat.supr-con↗

LaCo2B2: A Co-based layered superconductor with a ThCr2Si2-type structure

LaCo2B2 with a ThCr2Si2-type structure composed of alternately stacked La and CoB layers exhibits metallic electrical conductivity and Pauli paramagnetic behavior down to 2K. Bulk superconductivity with a Tc of ~4K emerges upon substitution with dopant elements; i.e., isovalent substitution to form (La1-xYx)Co2B2, or aliovalent substitution to form La(Co1-xFex)2B2. Highly covalent bonding between Co 3d and B 2p levels in the CoB layers, which is caused by the B 2p level being shallower than the Fermi level, removes magnetic ordering from Co 3d electrons even in the undoped samples.

cond-mat.supr-con↗

Hydrogen in layered iron arsenide: indirect electron doping to induce superconductivity

Utilizing the high stability of calcium and rare earth hydrides, CaFeAsF1-xHx (x = 0.0-1.0) and SmFeAsO1-xHx (x = 0.0-0.47) have been first synthesized using high pressure to form hydrogen-substituted 1111 type iron-arsenide superconductors. Neutron diffraction and density functional calculations have demonstrated that the hydrogens are incorporated as H- ions occupying F- sites in the blocking layer of CaFeAsF. The resulting CaFeAsF1-xHx is non-superconducting, whereas SmFeAsO1-xHx is a superconductor, with an optimal Tc = 55 K at x 0.2. It was found that up to 40% of the O2- ions can be replaced by H- ions, with electrons being supplied into the FeAs-layer to maintain neutrality (O2- = H-+ e-). When x exceeded 0.2, Tc was reduced corresponding to an electron over-doped region.

cond-mat.supr-con↗

Advantageous grain boundaries in iron pnictide superconductors

High critical temperature superconductors have zero power consumption and could be used to produce ideal electric power lines. The principal obstacle in fabricating superconducting wires and tapes is grain boundaries-the misalignment of crystalline orientations at grain boundaries, which is unavoidable for polycrystals, largely deteriorates critical current density. Here, we report that High critical temperature iron pnictide superconductors have advantages over cuprates with respect to these grain boundary issues. The transport properties through well-defined bicrystal grain boundary junctions with various misorientation angles (thetaGB) were systematically investigated for cobalt-doped BaFe2As2 (BaFe2As2:Co) epitaxial films fabricated on bicrystal substrates. The critical current density through bicrystal grain boundary (JcBGB) remained high (> 1 MA/cm2) and nearly constant up to a critical angle thetac of ~9o, which is substantially larger than the thetac of ~5o for YBCO. Even at thetaGB > thetac, the decay of JcBGB was much smaller than that of YBCO.

cond-mat.supr-con↗

Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm2 on MgO-buffered metal-tape flexible substrates

High critical current densities (Jc) > 1 MA/cm2 were realized in cobalt-doped BaFe2As2 (BaFe2As2:Co) films on flexible metal substrates with biaxially-textured MgO base-layers fabricated by an ion-beam assisted deposition technique. The BaFe2As2:Co films showed small in-plane crystalline misorientations (delta fai BaFe2As2:Co) of ~3o regardless of doubly larger misorientaions of the MgO base-layers (delta fai MgO = 7.3o), and exhibited high self-field Jc up to 3.5 MA/cm2 at 2 K. These values are comparable to that on MgO single crystals and the highest Jc among iron pnictide superconducting tapes and wires ever reported. High in-field Jc suggests the existence of c-axis correlated vortex pinning centers.

cond-mat.supr-con↗