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Hongjun Xiang

Publications and source records attributed to Hongjun Xiang.

At least 37 records · Page 2Linked to original sources

Efficient E(3)-equivariant framework for universal charge density prediction

Electronic structure is ubiquitously obtained via density functional theory (DFT), where the charge density plays a central role. This work presents EdenGNN (Equivariant Density Graph Neural Network), a machine learning (ML) charge density model for electronic structure. Current universal ML charge density models are hampered by prohibitive computational costs. Furthermore, despite being trained on projector augmented-wave (PAW) based DFT datasets, they predict only the pseudo charge density, which is insufficient to reconstruct the electronic structure. In contrast, EdenGNN overcomes these limitations. It additionally predicts the augmentation occupancies, enabling electronic structure calculations with PAW accuracy. Critically, by employing a basis-expansion formulation with fully trainable radial basis functions and a $Δ$-learning strategy to capture charge transfer, it is over an order of magnitude faster. Trained on the Materials Project database, our universal model, EdenGNN-Uni, accurately predicts the band structures for the majority of materials across a vast chemical space. These findings establish the ML charge density model as a scalable \textit{ab initio} method for large-scale electronic structure calculations and high-throughput screening.

cond-mat.mtrl-sci↗

Topological-transition-driven Giant Enhancement of Second-harmonic Generation in Ferroelectric Bismuth Monolayer

The interplay between band topology and light in condensed materials could unlock intriguing nonlinear optical phenomena, enabling modern photonic technologies such as quantum light sources and sub-wavelength topological lasers. Here, we unveil that a buckling-tuned topological transition in ferroelectric bismuth monolayer unleashes a giant second-harmonic generation. Using first-principles calculations, we surprisingly find that ferroelectric bismuth monolayer with a buckling parameter, $Δh$, has a large susceptibility $χ^{(2)}$ on the order of $10^{7}$ $\mathrm{pm}^2/\mathrm{V}$, exceeding monolayer MoS$_2$ by about two orders of magnitude. When $Δh$ is engineered to the critical window where Dirac electrons emerge, a low-frequency resonance appears, boosting $χ^{(2)}$ by an additional order of magnitude. We show that this enhancement is localized on the Dirac cones and dominated by intraband modification contributions. Based on an extended Dirac model, we establish that this enhancement physically originates from the ultralight effective masses $m^{*}$ of Dirac electrons through scaling with the Fermi velocity $v_F$ and band gap $E_g$. Our findings provide a general paradigm for achieving exceptional second-harmonic generation via engineering topological criticality, and could serve as an experimental signature of Dirac electrons in topological materials.

cond-mat.mtrl-sci↗

ABACUS: An Electronic Structure Analysis Package for the AI Era

ABACUS (Atomic-orbital Based Ab-initio Computation at USTC) is an open-source software for first-principles electronic structure calculations and molecular dynamics simulations. It mainly features density functional theory (DFT) and molecular dynamics functions and is compatible with both plane-wave basis sets and numerical atomic orbital basis sets. ABACUS serves as a platform that facilitates the integration of various electronic structure methods, such as Kohn-Sham DFT, stochastic DFT, orbital-free DFT, and real-time time-dependent DFT, etc. In addition, with the aid of high-performance computing, ABACUS is designed to perform efficiently and provide massive amounts of first-principles data for generating general-purpose machine learning potentials, such as DPA models. Furthermore, ABACUS serves as an electronic structure platform that interfaces with several AI-assisted algorithms and packages, such as DeePKS-kit, DeePMD, DP-GEN, DeepH, DeePTB, HamGNN, etc.

cond-mat.mtrl-sci↗

Design and theory of switchable linear magnetoelectricity by ferroelectricity in Type-I multiferroics

We present a comprehensive theoretical investigation of magnetoelectric (ME) coupling mechanisms in 19 altermagnetic and 4 ferrimagnetic Type-I multiferroics using electronic band structure calculations with spin-orbit coupling, a first-principles ME response framework, and spin-space-group theory analysis. We formulate a universal scheme for realizing nonvolatile ME coupling in Type-I multiferroics, where two distinct pathways emerge, each dictated by spin-space symmetry. The first pathway is associated with switching of the spin splitting or the now familiar spin-momentum locking in reciprocal space, characteristic of some altermagnetic mul-tiferroics that exhibit coexisting antiferromagnetism and ferroelectricity. The second pathway involves real-space magnetization switching via electric polarization reversal, characterized by switchable components of the linear ME tensor, despite the traditionally weak coupling in Type-I systems due to the independent origins of magnetism and ferroelectricity. We demonstrate that these two intrinsic ME coupling mechanisms are mutually exclusive and propose thermodynami-cally stable compounds for experimentation. Our findings establish general design principles for controlling robust nonvolatile ME effects in multiferroic materials.

cond-mat.mtrl-sci↗

Fractional Quantum Multiferroics from Coupling of Fractional Quantum Ferroelectricity and Altermagnetism

Multiferroics, which combine ferroelectric and magnetic order, offer a transformative platform for next-generation electronic devices. However, the intrinsic competition between the mechanisms driving ferroelectricity and magnetism in single-phase materials severely limits their performance, typically resulting in weak magnetoelectric coupling at room temperature. Here, we propose a solution to this long-standing challenge through the novel concept of fractional quantum multiferroics (FQMF), where strong magnetoelectric coupling is naturally realized by coupling fractional quantum ferroelectricity (FQFE) with altermagnetism (AM). Symmetry analysis shows that reversing the FQFE polarization necessarily inverts the AM spin splitting under parity-time ($\mathcal{PT}$) or time-reversal ($\mathcal{T}τ$) operations. A minimal tight-binding model reproduces this effect, demonstrating electrically driven spin control without rotating the Néel vector. First-principles calculations further identify a broad family of candidate materials in two and three dimensions including bulk MnTe, Cr$_2$S$_3$, Mn$_4$Bi$_3$NO$_{15}$ and two-dimensional AB$_2$ bilayers such as MnX$_2$ (X=Cl, Br, I), CoCl$_2$, CoBr$_2$, and FeI$_2$. Notably, MnTe exhibits a high Néel temperature ($\sim$300 K) and a large electrically switchable spin splitting ($\sim$0.8 eV), demonstrating room-temperature magnetoelectric performance that surpasses that of conventional multiferroics. To further showcase the technological potential, we propose an electric-field-controlled FQMF tunnel junction based on MnTe that achieves tunneling magnetoresistance exceeding 300\%. This work establishes FQMF as a distinct and promising route to achieving room-temperature strong magnetoelectric coupling, opening a new avenue for voltage-controlled spintronics.

cond-mat.mtrl-sci↗

Hidden integer quantum ferroelectricity in chiral Tellurium

Ferroelectricity is a cornerstone of functional materials research, enabling diverse technologies from non-volatile memory to optoelectronics. Recently, type-I integer quantum ferroelectricity (IQFE), unconstrained by symmetry, has been proposed and experimentally demonstrated; however, as it arises from ionic displacements of an integer lattice vector, the initial and final states are macroscopically indistinguishable, rendering the physical properties unchanged. Here, we propose for the first time the nontrivial counterpart (i.e., type-II IQFE) where the polarization difference between the initial and final states is quantized but the macroscopical properties differ. We further demonstrate the existence of type-II IQFE in bulk chiral tellurium. In few-layer tellurium, the total polarization remains nearly quantized, composed of a bulk-inherited quantum component and a small surface-induced contribution. Molecular dynamics simulations reveal surface-initiated, layer-by-layer switching driven by reduced energy barriers, explaining why ferroelectricity was observed experimentally in few-layer tellurium, but not in bulk tellurium yet. Interestingly, the chirality of the initial and final states in bulk tellurium is opposite, suggesting a novel way to control structural chirality with electric field in chiral photonics and nonvolatile ferroelectric memory devices.

cond-mat.mtrl-sci↗

General First-Principles Approach to Crystals in Finite Magnetic Fields

We introduce a general first-principles methodology for computing electronic structure in a finite uniform magnetic field which allows for an arbitrary rational magnetic flux and nonlocal pseudopotentials, at a comparable time complexity of conventional plane-wave pseudopotential approaches in zero-field conditions. The versatility of this method is demonstrated through comprehensive applications to both molecular and crystalline systems, including calculations of magnetizabilities, magnetically induced currents, and magnetic energy bands. Furthermore, we provide rigorous proofs of two properties for crystals in uniform magnetic fields: the "strong translational symmetry" and "magnetic bands shift" phenomena.

cond-mat.mtrl-sci↗

Defect-Charge-Driven 90° Switching in HfO2

Hafnium dioxide (HfO2) is a CMOS-compatible ferroelectric showing both 180° and 90° switching, yet the microscopic nature of the 90° pathway remains unresolved. We show that the 90° rotation pathway, negligible in pristine HfO2, becomes dominant under E// [111] when induced by charged oxygen vacancies. This pathway is more fatigue-resistant than the 180° reversal pathway, while delivering the same polarization change along [111] (2Pr=60 μC/cm^2 ). This charge-driven switching arises from two factors: the crystal geometry of HfO2 and the intrinsic nature of rotational pathways, the latter suggesting a possible general tendency for defect charge to bias rotation over reversal in ferroelectrics. Together these findings reveal a pathway-level origin of fatigue resistance and establish defect charge as a general control parameter for polarization dynamics.

cond-mat.mtrl-sci↗

Recent Advances in Unconventional Ferroelectrics and Multiferroics

Emerging ferroic materials may pave a new way to next-generation nanoelectronic and spintronic devices due to their interesting physical properties. Here, we systematically review unconventional ferroelectric systems, from Hf-based and elementary ferroelectrics to stacking ferroelectricity, polar metallicity, fractional quantum ferroelectricity, wurtzite-type ferroelectricity, and freestanding membranes ferroelectricity. Moreover, multiferroic materials are reviewed, particularly the interplay between novel magnetic states and ferroelectricity, as well as ferrovalley-ferroelectric coupling. Finally, we conclude by discussing current challenges and future opportunities in this field.

cond-mat.mtrl-sci↗

Piezomagnetism-driven magnetoelectric coupling in altermagnetic multiferroic K3Cr2F7

Ferroelectric control of altermagnetism in momentum space has been studied widely, while the control of magnetism in real space of altermagnets are still rare. We present a design rule to identify multiferroicity in n=2 Ruddlesden-Popper halides. Our results show that a Jahn-Teller distortion can cooperate with oxygen octahedral rotations to break inversion symmetry, which we demonstrate in K3Cr2F7 and cation-ordered KAg2Cu2Cl7, and leads to a ferrielectric-to-ferroelectric phase transition in K3Cr2F7. Altermagnetic spin order in the ferrielectric phase of K3Cr2F7 transforms into a conventional antiferromagnetic order in the ferroelectric phase, at which strain/pressure engineered sizable changes of weak ferromagnetism can occur. Our study is not only conducive to realize strong magnetoelectric coupling in multiferroics, but also reveals more functionalities in altermagnetic materials.

cond-mat.mtrl-sci↗

Moiré-Induced Magnetoelectricity in Twisted Bilayer NiI2

Twisted magnetic van der Waals (vdW) materials offer a promising route for multiferroic engineering, yet modeling large-scale moiré superlattices remains challenging. Leveraging a newly developed SpinGNN++ framework that effectively handles spin-lattice coupled systems, we develop a comprehensive interatomic machine learning (ML) potential and apply it to twisted bilayer NiI2 (TBN). Structural relaxation introduces moiré-periodic "bumps" that modulate the interlayer spacing by about 0.55~Å and in-plane ionic shifts up to 0.48~Å. Concurrently, our ML potential, which faithfully captures all key spin interactions, produces reliable magnetic configurations; combined with the generalized KNB mechanism, it yields accurate spin-driven polarization. For twist angles 1.89^{\circ} \leq θ\leq 2.45^{\circ}, both mechanisms become prominent, yielding rich polarization textures that combine ionic out-of-plane dipoles with purely electronic in-plane domains. In the rigid (unrelaxed) bilayer, skyrmions are absent; lattice relaxation is essential for generating polar-magnetic topologies. In contrast, near θ \approx 60^{\circ}, stacking-dependent ferroelectric displacements dominate, giving rise to polar meron-antimeron networks. These results reveal cooperative ionic and spin-driven ferroelectricity in TBN, positioning twisted vdW magnets as adaptable platforms for tunable multiferroic devices.

cond-mat.mtrl-sci↗

Symmetry Analysis of Magnetoelectric Coupling Effect in All Point Groups

Symmetry analysis provides crucial insights into the magnetoelectric coupling effect in type-II multiferroics. In this Letter, we comprehensively investigate couplings between electric polarization and inhomogeneous magnetization across all 32 crystallographic point groups using a phenomenological Landau theory. Our theory successfully explains the ferroelectric polarizations in all known type-II multiferroics characterized by incommensurate magnetic orders. In addition, we predict 12 promising type-II multiferroic candidates with the highest magnetic transition temperature of 84 K through systematic screening of MAGNDATA database. Furthermore, we find that the collinear spin-sinusoidal texture emerges as a previously unrecognized source of ferroelectric polarization. We also demonstrate that topological ferroelectric vortex states can be induced by ferromagnetic vortex configurations in uniaxial point groups, opening a route to realizing coexisting multiple-vortex states in multiferroics.

cond-mat.mtrl-sci↗

Generation of Pure Spin Current with Insulating Antiferromagnetic Materials

The generation of pure spin currents is critical for low-dissipation spintronic applications, yet existing methods relying on spin-orbit coupling or ferromagnetic interfaces face challenges in material compatibility and operational robustness. We propose a paradigm-shifting approach to generate symmetry-protected pure spin currents by applying mechanical stress on insulating antiferromagnetic materials, i.e., the pure piezospintronic effect. We first classify magnetic point groups enabling pure piezospintronic effects. A novel first-principles method is developed to compute the spin dipole moments and coefficients of the piezospintronic effect. Integrating these methodologies with high-throughput screening, we identify FeOOH, Cr2O3 and NaMnX (X=As, Bi, P, Sb) with significant pure piezospintronic effects. Interestingly, we reveal that the ionic displacement contribution dominates the piezospintronic effect, in contrast to the piezoelectric effect. Our study not only provides first-principles approach for investigating spin dipole moment related phenomena (e.g., ferrotoroidicity, fractional quantum spin dipole moment, piezospintronics), but also provide promising piezospintronic materials for experimental verification and industrial applications.

cond-mat.mtrl-sci↗

Efficient construction of effective Hamiltonians with a hybrid machine learning method

The effective Hamiltonian method is a powerful tool for simulating large-scale systems across a wide range of temperatures. However, previous methods for constructing effective Hamiltonian models suffer from key limitations: some require to manually predefine interaction terms limited flexibility in capturing complex systems, while others lack efficiency in selecting optimal interactions. In this work, we introduce the Lasso-GA Hybrid Method (LGHM), a novel approach that combines Lasso regression and genetic algorithms to rapidly construct effective Hamiltonian models. Such method is broadly applicable to both magnetic systems (e.g., spin Hamiltonians) and atomic displacement models. To verify the reliability and usefulness of LGHM, we take monolayer CrI_3 and Fe_3 GaTe_2 as examples. In both cases, LGHM not only successfully identifies key interaction terms with high fitting accuracy, but also reproduces experimental magnetic ground states and Curie temperatures with further Monte Carlo simulations. Notable, our analysis of monolayer Fe_3 GaTe_2 reveals that the single-ion anisotropy and Heisenberg interaction lead to an out-of-plane ferromagnetic ground state, while the fourth-order interactions contribute significantly to the high Curie temperature. Our method is general so it can be applied to construct other effective Hamiltonian models.

physics.comp-ph↗

A Universal Spin-Orbit-Coupled Hamiltonian Model for Accelerated Quantum Material Discovery

The accurate modeling of spin-orbit coupling (SOC) effects in diverse complex systems remains a significant challenge due to the high computational demands of density functional theory (DFT) and the limited transferability of existing machine-learning frameworks. This study addresses these limitations by introducing Uni-HamGNN, a universal SOC Hamiltonian graph neural network that is applicable across the periodic table. By decomposing the SOC Hamiltonian into spin-independent and SOC correction terms, our approach preserves SU(2) symmetry while significantly reducing parameter requirements. Based on this decomposition, we propose a delta-learning strategy to separately fit the two components, thereby addressing the training difficulties caused by magnitude discrepancies between them and enabling efficient training. The model achieves remarkable accuracy (mean absolute error of 0.0025 meV for the SOC-related component) and demonstrates broad applicability through high-throughput screening of the GNoME dataset for topological insulators, as well as precise predictions for 2D valleytronic materials and transition metal dichalcogenide (TMD) heterostructures. This breakthrough eliminates the need for system-specific retraining and costly SOC-DFT calculations, paving the way for rapid discovery of quantum materials.

cond-mat.mtrl-sci↗

Orbital Order Triggered Out-of-Plane Ferroelectricity in Magnetic Transition Metal di-halide Monolayers

Although multiferroics have undergone extensive examination for several decades, the occurrence of ferroelectricity induced by orbital order is only scarcely documented. In this study, we propose the existence of spontaneous ferroelectric states featuring a finite out-of-plane polarization in monolayer compounds of magnetic transition metal di-halides. Our first principles analysis reveals that partially occupied d-orbital states within octahedra exhibit a preference for spatial orbital order within a two-dimensional lattice. The absence of inversion symmetry, arising from orbital order, serves as the driving force introducing additional electric polarization along the out-of-plane direction. Unlike previous reported orbital orders arising from metal states in lattice, the non-colinear ones we studied in this work relate to the transition between two insulator states. The resultant asymmetric Jahn-Teller distortions are accompanied as the consequence producing additional ionic polarization. Importantly, our findings indicate that this mechanism is not confined to a specific material but is a shared characteristic among a series of monolayer transition metal magnetic di-halides, proposing an innovative form of intrinsic two-dimensional multiferroic physics.

cond-mat.mtrl-sci↗

Linear Scaling Calculation of Atomic Forces and Energies with Machine Learning Local Density Matrix

Accurately calculating energies and atomic forces with linear-scaling methods is a crucial approach to accelerating and improving molecular dynamics simulations. In this paper, we introduce HamGNN-DM, a machine learning model designed to predict atomic forces and energies using local density matrices in molecular dynamics simulations. This approach achieves efficient predictions with a time complexity of O(n), making it highly suitable for large-scale systems. Experiments in different systems demonstrate that HamGNN-DM achieves DFT-level precision in predicting the atomic forces in different system sizes, which is vital for the molecular dynamics. Furthermore, this method provides valuable electronic structure information throughout the dynamics and exhibits robust performance.

cond-mat.mtrl-sci↗

Intrinsic breakdown strength: theoretical derivation and first-principles calculations

Intrinsic breakdown strength (F_bd), as the theoretical upper limit of electric field strength that a material can sustain, plays important roles in determining dielectric and safety performance. The well accepted concept is that a larger band gap (E_g) often leads to a larger intrinsic breakdown strength. In this work, we analytically derive a simplified model of F_bd, showing a linear relationship between F_bd and the maximum electron density of states (DOS_max) within the energy range spanning from the conduction band minimum (CBM) to CBM+E_g. Using the Wannier interpolation technique to reduce the cost of calculating the F_bd for various three- and two-dimensional materials, we find that the calculated F_bd did not show any simple relationship with band gap, but it behaves linearly with the DOS_max, consistent with our theoretical derivation. Our work shows that the DOS_max is more fundamental than the band gap value in determining the F_bd, thus providing useful physical insights into the intrinsic dielectric breakdown strength and opening directions for improving high-power devices. The dimensional effects on F_bd has also been revealed that monolayers tend to have larger F_bd due to reduced screening effects.

cond-mat.mtrl-sci↗