arXiv subjects

Hongshi Li

Publications and source records attributed to Hongshi Li.

7 recordsLinked to original sources

arXiv2022

Efficient Extraction of Hot Carriers in Perovskite Quantum Dot through Building State Coupled Complex

Utilizing hot carriers is the crucial approach for solar cell to exceed the thermodynamic detailed balance limit, yet effective extraction of hot carriers in absorber materials via most commonly used semiconductor acceptors has been a challenge in both materials and photophysics research for many years. Herein, we build series of CsPbI3 quantum dot and fullerene derivative systems to explore the decisive factors of this process and have for the first time realized efficient hot carrier extraction in these systems (maximum extraction efficiency ~ 84%). We find building the systems as state-coupled complexes creates new carrier transport channels at about 0.22 eV above CsPbI3 quantum dot bandgap, which facilitates highly efficient HC extraction. Our research directly visualizes the inner connection of molecule interaction and ultrafast hot carrier extraction. The knowledge and strategy gained here are of universal meaning, taking an important step forward true hot carrier photovoltaics.

physics.app-ph↗

arXiv2021

Determination of spin-orbit torques by thickness-dependent spin-orbit torque FMR measurement

Current induced spin-orbit torques (SOTs) in Fe/Pt bilayers have been investigated utilizing the spin-orbit torque ferromagnetic resonance (SOT-FMR) measurement. Characterization of thin films with different thicknesses indicates existence of a sizable field-like spin-orbit torque competing with the Oersted field induced torque (Oersted torque). The field-like torque is neglected in the standard SOT-FMR method and the presence of a strong field-like torque makes estimation of the spin Hall angle (SHA) problematic. Also, it is challenging to differentiate the field-like torque from the Oersted torque in a radiofrequency measurement. Based on the thickness dependence of field-like torque, anti-damping torque, and Oersted torque, the thickness-dependent SOT-FMR measurement is proposed as a more reliable, self-calibrated approach for characterization of spin-orbit torques.

physics.app-ph↗

arXiv2021

Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

We show that a surface acoustic wave (SAW) applied across the terminals of a magnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel and antiparallel resistances of the MTJ, with the latter decreasing much more than the former. This results in a decrease of the tunneling magnetoresistance (TMR) ratio. The coercivities of the free and fixed layer of the MTJ, however, are not affected significantly, suggesting that the SAW does not cause large-angle magnetization rotation in the magnetic layers through the inverse magnetostriction (Villari) effect at the power levels used. This study sheds light on the dynamical behavior of an MTJ under periodic compressive and tensile strain.

cond-mat.mes-hall↗

arXiv2021

Large field-like torque in amorphous Ru2Sn3 originated from the intrinsic spin Hall effect

We investigated temperature dependent current driven spin-orbit torques in magnetron sputtered Ru2Sn3 (4 and 10 nm) /Co20Fe60B20 (5 nm) layered structures with in-plane magnetic anisotropy. The room temperature damping-like and field-like spin torque efficiencies of the amorphous Ru2Sn3 films were measured to be 0.14 +- 0.008 (0.07 +- 0.012) and -0.03 +- 0.006 (-0.20 +- 0.009), for the 4 (10 nm) films respectively, by utilizing the second harmonic Hall technique. The large field-like torque in the relatively thicker Ru2Sn3 (10 nm) thin film is unique compared to the traditional spin Hall materials interfaced with thick magnetic layers with in-plane magnetic anisotropy which typically have dominant damping-like and negligible field-like torques. Additionally, the observed room temperature field-like torque efficiency in Ru2Sn3 (10 nm)/CoFeB (5 nm) is up to three times larger than the damping-like torque (-0.20 +- 0.009 and 0.07 +- 0.012, respectively) and thirty times larger at 50 K (-0.29 +- 0.014 and 0.009 +- 0.017, respectively). The temperature dependence of the field-like torques show dominant contributions from the intrinsic spin Hall effect while the damping-like torques show dominate contributions from the extrinsic spin Hall effects, skew scattering and side jump. Through macro-spin calculations, we found that including field-like torques on the order or larger than the damping-like torque can reduce the switching critical current and decrease magnetization procession for a perpendicular ferromagnetic layer.

cond-mat.mes-hall↗

arXiv2019

Exploiting Electrical Transients to Reveal Charge Loss Mechanism of Junction Solar Cells

Electrical transients enabled by optical excitation and electric detection provide a distinctive opportunity to study the charge transport, recombination and even the hysteresis of a solar cell in a much wider time window ranging from nanoseconds to seconds. However, controversies on how to exploit these investigations to unravel the charge loss mechanism of the cell have been ongoing. Herein, a new methodology of quantifying the charge loss within the bulk absorber or at the interfaces and the defect properties of junction solar cells has been proposed after the conventional tail-state framework is firstly demonstrated to be unreasonable. This methodology has been successfully applied in the study of commercialized silicon and emerging Cu2ZnSn(S, Se)4 and perovskite solar cells herein and should be universal to other photovoltaic device systems with similar structures. Overall, this work provides an alluring route for comprehensive investigation of dynamic physics processes and charge loss mechanism of junction solar cells and possesses potential applications for other optoelectronic devices.

physics.app-ph↗

arXiv2017

Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current density reported in a bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of growth of the films on silicon substrate, successful growth and switching of a perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of BixSe(1-x) topological insulator (TI) material as a spin-current generator in SOT-based memory and logic devices.

cond-mat.mes-hall↗

arXiv2015

Evaluation of Spin Waves and Ferromagnetic Resonance Contribution to the Spin Pumping in Ta/CoFeB Structure

The spin waves and ferromagnetic resonance (FMR) contribution to the spin pumping signal is studied in the Ta/CoFeB interface under different excitation bias fields. Ferromagnetic resonance is excited utilizing a coplanar waveguide and a microwave generator. Using a narrow waveguide of about 3 μm, magnetostatic surface spin waves with large wavevector (k) of about 0.81 μm^-1 are excited. A large k value results in dissociation of spin waves and FMR frequencies according to the surface spin wave dispersion relation. Spin waves and FMR contribution to the spin pumping are calculated based on the area under the Lorentzian curve fitting over experimental results. It is found that the FMR over spin waves contribution is about 1 at large bias fields in Ta/CoFeB structure. Based on our spin pumping results, we propose a method to characterize the spin wave decay constant which is found to be about 5.5 μm in the Ta/CoFeB structure at a bias field of 600 Oe.

cond-mat.mes-hall↗