arXiv subjects

Huaiqiang Wang

Publications and source records attributed to Huaiqiang Wang.

At least 19 recordsLinked to original sources

arXiv2026

Floquet spin-group framework and its application to light-tailored spin splitting in collinear magnets

Altermagnets combine momentum-dependent spin splitting with vanishing net magnetization, opening new opportunities for spintronics. Recent studies have shown that periodic driving by linearly or circularly polarized light, as well as by multicolor light fields, can control spin splitting in altermagnets and conventional antiferromagnets, and can even generate spin splitting patterns absent in equilibrium. Despite this progress, a unified principle connecting the dynamical symmetry of light to the symmetry of spin-split bands remains lacking, limiting the systematic design of light-induced spin structures. Here, by combining the spin group of crystals with the dynamical group of light, we establish a unified Floquet spin group framework for the study of periodically driven collinear magnets with negligible spin-orbit coupling. This framework systematically determines the allowed parity, momentum dependence, and nodal structure of spin splitting under different driving protocols. Guided by this symmetry classification, we show that odd-parity, even-parity, and mixed-parity spin splittings can be switched within the same material by tailoring the driving field. We further uncover higher-order $h$-wave and $k$-wave spin splittings in three-dimensional systems. Our work establishes a unified symmetry framework for light-controlled spin splitting and provides general principles for engineering nonequilibrium spin-band structures in altermagnets and related magnetic materials.

cond-mat.mes-hall↗

arXiv2026

Altermagnetic type-II Multiferroics with Néel-order-locked Electric Polarization

Altermagnetism, an emergent magnetic phase featuring compensated collinear magnetic moments and momentum-dependent spin splittings, has recently garnered widespread interest. A critical issue concerns whether the unconventional spin structures can generate spontaneous electric polarization in altermagnets, thereby achieving type-II multiferroicity. Here, with the combination of symmetry analysis and microscopic theory, we explicitly demonstrate the generation of electric polarization by altermagnetic Néel order, and establish a microscopic mechanism of Néel-order-locked electric polarization in altermagnetic multiferroics.~We further reveal these pronounced magnetoelectric coupling behaviors and classify them into eight distinct categories for two-dimensional altermagnets governed by layer group symmetries. Then we take monolayer MgFe$_2$N$_2$ as a prototypical example of altermagnetic type-II multiferroics by first-principles calculations. We also propose to identify the Néel order and accompanying electric polarization in altermagnetic multiferroics by magneto-optical microscopy. Bridging type-II multiferroics and altermagnets, our work could pave the way for altermagnetic multifunctional spintronics.

cond-mat.mtrl-sci↗

arXiv2026

Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4

The nonlinear Hall effect is a new member of the Hall effect family, which attracts intense research interests, and it is closely related to the quantum geometry of quantum materials. The previous studies primarily concentrate on the second-order and third-order nonlinear Hall effect. However, the experimental study of higher-order nonlinear Hall effect is scarce at present. In this work, we report the observations of the higher odd-order (third-, fifth-, seventh-order) nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4 thin flakes. The higher odd-order nonlinear Hall voltage exhibits a twofold angular dependence and exists only below the Néel temperature. It reaches its maximum near the charge neutral point and decays exponentially as the order of the nonlinear Hall effect increases. Furthermore, such higher odd-order nonlinear Hall effect is observed in both odd- and even-layer samples with comparable magnitudes. Theoretical analysis indicates that the higher odd-order nonlinear Hall effect responses may arise from the Berry curvature multipoles. Our work paves the way for the study of the higher-order nonlinear transport phenomena.

cond-mat.mes-hall↗

arXiv2026

Room-temperature third-order nonlinear anomalous Hall effect in ferromagnetic metal Fe3GaTe2

Berry curvature, as the imaginary component of quantum geometry, plays a crucial role in condensed matter physics. The spatial distribution of Berry curvature can be characterized by its dipole and multipole moments, which can induce the nonlinear anomalous Hall effect (NLAHE). To date, the NLAHE has been demonstrated in various materials, yet reports on room-temperature NLAHE are still limited. In this work, we report the observation of the third-order NLAHE in ferromagnetic metal Fe3GaTe2. The third-order NLAHE shows hysteretic behavior with the variation of magnetic field, where the coercive field is the same as that of the anomalous Hall effect, and the third-order NLAHE remains observable up to the Curie temperature (~350 K). The scaling analysis suggests that the third-order NLAHE may be attributed to the Berry curvature quadrupole. Our work not only provides an approach to study magnetic materials through nonlinear electric transports, but also opens up possibilities for the future development of room-temperature third-order nonlinear electronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Floquet odd-parity collinear magnets

Altermagnets (AMs), recently discovered unconventional magnets distinct from both ferro- and antiferromagnets, have rapidly emerged as a prominent research topic in condensed matter physics. AMs are characterized by alternating collinear magnetic moments with zero net magnetization in real space, and spin splittings with even-parity symmetry in momentum space. However, their counterparts exhibiting odd-parity spin splittings are generally thought to be absent in collinear magnets. Here, we show that such unconventional odd-parity magnets can be induced from collinear antiferromagnets by symmetry engineering. Remarkably, using effective model analysis within Floquet-theory framework, we demonstrate that circularly polarized light irradiation of conventional antiferromagnetic lattices breaks a spin-preserving pseudo-time-reversal symmetry and induces both $p$- and $f$-wave magnets, realizing novel magnetic states dubbed Floquet odd-parity collinear magnets. Moreover, we also uncover light-induced antiferromagnetic Chern insulating states in the $f$-wave magnets. The proposed Floquet odd-parity magnet is confirmed by first-principles calculations of MnPSe$_{3}$ under circularly polarized light. Our work not only proposes a new class of unconventional magnets, but also opens an avenue for light-induced magnetic phenomena in spintronic applications.

cond-mat.mes-hall↗

arXiv2026

Alteraxial Phonons in Collinear Magnets

Axial phonons, carrying angular momentum through rotational lattice vibrations, offer a promising platform for exploring phonon-magnetic coupling effects. However, how the interplay of lattice and magnetism determine the phonon angular momentum (PAM) of axial phonons remains elusive. Here, based on magnetic point group theory, we establish a symmetry framework to classify phonons in collinear magnets (e.g. ferromagnets, antiferromangets, altermagnets) into three distinct categories: ferroaxial, antiferro-nonaxial, and alteraxial phonons, which are distinguished by their different PAM patterns. Beyond the ferroaxial phonons featuring $s$-wave PAM, we reveal a complete series of alteraxial phonons, characterized by higher-order-wave PAM patterns ranging from $p$- to $j$-wave. Notably, alteraxial phonons are not limited to altermagnets, but also emerge in ferromagnets and antiferromagets. Our high-throughput search predicts hundreds of candidate magnetic materials hosting alteraxial phonons. Ab initio calculations on representative magnets further confirm the existence and distinct symmetry-enforced nodal structures of PAM in alteraxial phonons. Our work provides a complete classification for axial phonons in collinear magnetic systems and paves the way for engineering magneto-phononic phenomena.

cond-mat.mtrl-sci↗

arXiv2025

Ab Initio Theory of Phonon Magnetic Moment Induced by Electron-Phonon Coupling in Magnetic Materials

Circularly polarized phonons, characterized by nonzero angular momenta and magnetic moments, have attracted extensive attention. However, a long-standing critical issue in this field is the lack of an approach to accurately calculate phonon magnetic moments resulting from electron-phonon coupling (EPC) in realistic materials. Here, based on the linear response framework, we develop an ab initio theory for calculating EPC-induced magnetic properties of phonons, applicable to both insulating and metallic materials. Our method can precisely calculate phonon Zeeman splittings in magnetic metals with significant EPC, as demonstrated by the remarkable agreement with recent experimental observations of phonon Zeeman splitting in the ferromagnetic Weyl semimetal Co3Sn2S2. In addition, the long-sought magnetic phonon spectra across the entire Brillouin zone are obtained, facilitating the study of magnetic phonon transport and topology. Specifically, by constructing an inertially decoupled lattice model, we propose candidate materials exhibiting intrinsic phonon Chern states with robust unidirectional edge phonon currents. Our work paves the way for investigating novel phonon phenomena in magnetic quantum materials.

cond-mat.mtrl-sci↗

arXiv2025

Switchable axionic magnetoelectric effect via spin-flop transition in topological antiferromagnets

The MnBi$_2$Te$_4$ material family has emerged as a key platform for exploring magnetic topological phases, most notably exemplified by the experimental realization of the axion insulator state. While spin dynamics are known to significantly influence the axion state, a profound understanding of their interplay remains elusive. In this work, we employ an antiferromagnetic spin-chain model to demonstrate that an external magnetic field induces extrinsic perpendicular magnetic anisotropy. We find that an in-plane field stabilizes the antiferromagnetic order, whereas an out-of-plane field destabilizes it and triggers spin-flop transitions. Remarkably, near the surface spin-flop transition in even-layer MnBi$_2$Te$_4$ films, the axion insulator state undergoes a sharp switching behavior accompanied by distinct magnetoelectric responses. Furthermore, we propose that this switchable axionic magnetoelectric effect can be utilized to convert alternating magnetic field signals into measurable square-wave magneto-optical outputs, thereby realizing an axionic analog of a zero-crossing detector. Our findings could open a pathway toward potential applications of axion insulators in next-generation spintronic devices.

cond-mat.mes-hall↗

arXiv2025

Giant Splitting of Folded Dirac Bands in Kekulé-ordered Graphene with Eu Intercalation

Kekulé-ordered graphene on SiC realized by intercalating two-dimensional metal layers offers a versatile platform for exploring intriguing quantum states and phenomena. Here, we achieve the intercalation of $(\mathrm{\sqrt{3}\times\sqrt{3}})\mathit{R}30^\circ$-ordered Eu layer between epitaxial graphene and SiC substrate, realizing a Kekulé graphene with large local magnetic moments of intercalated Eu atoms. Combining angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we revealed that the Kekul{é} order folds the Dirac cones of graphene from the corners to the Brillouin zone center via intervalley scattering, forming the replica Dirac bands with gap opening. More intriguingly, the Dirac fermions in the replica Dirac bands show a strong exchange coupling with the localized magnetic moments of Eu $4f$ orbitals, resulting in a giant splitting of the folded Dirac bands. The observation of strong coupling between Dirac fermions and local magnetic moments of Eu $4f$ electrons via Kekulé order pave a new way for generating Dirac band splitting in graphene, advancing the potential applications of Kekulé-ordered graphene in spintronics, as well as exploring intriguing physical properties and correlation states for quantum technology.

cond-mat.str-el↗

arXiv2025

Amplifying solid-state high harmonic generations with momentum k-gaps in band structure engineering

We propose a novel amplification mechanism for high harmonic generation (HHG) in solids by leveraging bandgap engineering with momentum k-gaps. By constructing a simple diatomic lattice featuring balanced, alternating gain and loss profiles, facilitated by an array of four-level systems, we explore the physics of k-gap-amplified Bloch oscillations in the intraband channel of solid-state HHG. Through numerical simulations, we elucidate the coexistence of amplification and harmonic radiation processes in a solid. Our finding reveals that advanced bandgap engineering can define k-space optical devices - such as Brillouin cavity, Bloch-Zener oscillator and k-gap amplifier - thereby enabling the coherent manipulation of semiconductor radiation and high harmonic generation in both semiconductor superlattices and artificial materials. Furthermore, we analyze the spectrogram and material realizations required for amplifying solid-state HHG. These results underscore the potential of k-gap band structure engineering to advance coherent light sources at extremely short wavelengths.

physics.optics↗

arXiv2024

Electrically tunable high-Chern-number quasiflat bands in twisted antiferromagnetic topological insulators

Isolated flat bands with significantly quenched kinetic energy of electrons could give rise to exotic strongly correlated states from electron-electron interactions. More intriguingly, the interplay between topology and flat bands can further lead to richer physical phenomena, which have attracted much interest. Here, taking advantage of the recently proposed intertwined Dirac states induced from the anisotropic coupling between the top and bottom surface states of an antiferromagnetic topological insulator thin film, we show the emergence of a high-Chern-number (quasi)flat-band state through moiré engineering of the surface states. Remarkably, the flat bands are isolated from other bands and located near the Fermi level. Furthermore, topological phase transitions between trivial and nontrivial flat-band states can be driven by tuning the out-of-plane electric field. Our work not only proposes a new scheme to realize high-Chern-number flat-band states, but also highlights the versatility of the intertwined Dirac-cone states.

cond-mat.mes-hall↗

arXiv2024

Free electron topological bound state induced by light beam with a twisted wavefront

Recent advances in ultrafast electron emission, microscopy, and diffraction have demonstrated a remarkable ability to manipulate free electrons with quantum coherence using light beams. Here, we present a framework for exploring free electron quantum number in ultrafast electron-light interactions. We derive an explicit Jackiw-Rebbi solution for a low-energy free electron wavefunction subjected to a spatiotemporally twisted laser field, resulting in a flying topologically protected bound state with a quantum number of e/2 - termed a "half-electron". This flying bound state is dispersion-free due to its topological nature. We demonstrate the topological confinement and pair generation mechanism of half-electrons in free space, expanding their domain beyond the topological states typically found in solids and photonics. This advancement enhances our understanding of emulating exotic quantum and topological effects with low-energy free electrons.

quant-ph↗

arXiv2024

Symmetry-driven anisotropic coupling effect in antiferromagnetic topological insulator: Mechanism for high-Chern-number quantum anomalous Hall state

Antiferromagnetic (AFM) topological insulators (TIs), which host magnetically gapped Dirac-cone surface states and exhibit many exotic physical phenomena, have attracted great attention. Here, we find that the coupled surface states can be intertwined to give birth to a set of $2n$ unique new Dirac cones, dubbed intertwined Dirac cones, through the anisotropic coupling enforced by crystalline $n$-fold ($n=2, 3, 4, 6$) rotation symmetry $C_{nz}$ in the presence of a $PT$-symmetry breaking potential, for example, an electric field. Interestingly, we also find that the warping effect further drives the intertwined Dirac-cone state into a quantum anomalous Hall phase with a high Chern number ($C=n$). Then, based on first-principles calculations, we have explicitly demonstrated six intertwined Dirac cones and a Chern insulating phase with a high Chern number ($C=3$) in MnBi$_2$Te$_4$$/$(Bi$_2$Te$_3$)$_{\mathrm{m}}/$MnBi$_2$Te$_4$ heterostructures, as well as the $C=2$ and $C=4$ phases in HgS and $α$-Ag$_2$Te films, respectively. This work discovers the intertwined Dirac-cone state in AFM TI thin films, which reveals a mechanism for designing the quantum anomalous Hall state with a high Chern number and also paves a way for studying highly tunable high-Chen-number flat bands of twistronics.

cond-mat.mes-hall↗

arXiv2024

Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor

Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8 μB to 5.1 μB for the ground-state GN at an electric field strength of 3-10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional theory calculations further corroborate our realization of nonvolatile switching of single-atom magnetism, and the switching stability emanates from an energy barrier of 92 meV for atomic relaxation. These results highlight the potential of using endohedral metallofullerenes for high-temperature, high-stability, high-speed, and compact single-atom magnetic data storage.

cond-mat.mtrl-sci↗

arXiv2023

Three-Dirac-fermion approach to unexpected universal gapless surface states of van der Waals magnetic topological insulators

Layered van der Waals (vdW) topological materials, especially the recently discovered MnBi$_2$Te$_4$-family magnetic topological insulators (TIs), have aroused great attention. However, there has been a serious debate about whether the surface states are gapped or gapless for antiferromagnetic (AFM) TI MnBi$_2$Te$_4$, which is crucial to the prospect of various magnetic topological phenomena. Here, a minimal three-Dirac-fermion approach is developed to generally describe topological surface states of nonmagnetic/magnetic vdW TIs under the modulation of the interlayer vdW gap. In particular, this approach is applied to address the controversial issues concerning the surface states of vdW AFM TIs. Remarkably, topologically protected gapless Dirac-cone surface states are found to arise due to a small expansion of the interlayer vdW gap on the surface, when the Chern number equals zero for the surface ferromagnetic layer; while the surface states remain gapped in all other cases. These results are further confirmed by our first-principles calculations on AFM TI MnBi$_2$Te$_4$. The theorectically discovered gapless Dirac-cone states provide a unique mechanism for understanding the puzzle of the experimentally observed gapless surface states in MnBi$_2$Te$_4$. This work also provides a promising way for experiments to realize the intrinsic magnetic quantum anomalous Hall effect in MnBi$_2$Te$_4$ films with a large energy gap.

cond-mat.mes-hall↗

arXiv2023

A Dirac-fermion approach and its application to design high Chern numbers in magnetic topological insulator multilayers

Quantum anomalous Hall (QAH) insulators host topologically protected dissipationless chiral edge states, the number of which is determined by its Chern number. Up to now, the QAH state has been realized in a few magnetic topological insulators, but usually with a low Chern number. Here, we develop a Dirac-fermion approach which is valuable to understand and design high Chern numbers in various multilayers of layered magnetic topological insulators. Based on the Dirac-fermion approach, we demonstrate how to understand and tune high Chern numbers in ferromagentic MnBi$_{2}$Te$_{4}$ films through the van der Waals (vdW) gap modulation. Further, we also employ the Dirac-fermion approach to understand the experimentally observed high Chern numbers and topological phase transition from the Chern number $C=2$ to $C=1$ in the [3QL-(Bi,Sb)$_{1.76}$Cr$_{0.24}$Te$_{3}$]/[4QL-(Bi,Sb)$_{2}$Te$_{3}$] multilayers. Our work provides a powerful tool to design the QAH states with a high Chern number in layered magnetic topological insulator multilayers.

cond-mat.mes-hall↗

arXiv2022

Floquet engineering of magnetic topological insulator MnBi$_2$Te$_4$ films

Floquet engineering is an important way to manipulate the electronic states of condensed matter physics. Recently, the discovery of the magnetic topological insulator MnBi$_2$Te$_4$ and its family provided a valuable platform to study magnetic topological phenomena, such as, the quantum anomalous Hall effect, the axion insulator state and the topological magnetoelectric effect. In this work, based on the effective model and first-principles calculations in combination with the Floquet theory, we reveal that the circularly polarized light (CPL) induces the sign reversal of the Chern number of odd-septuple-layer (SL) MnBi$_2$Te$_4$ thin films. In contrast, the CPL drives the axion insulator state into the quantum anomalous Hall state in even-SL MnBi$_2$Te$_4$ thin films. More interestingly, if the topmost van der Waals gap between the surface layer and the below bulk in MnBi$_2$Te$_4$ films is slightly expanded, a high Chern number $|C|=2$ can be realized under the CPL. Our work demonstrates that the light can induce rich magnetic topological phases in MnBi$_2$Te$_4$ films, which might have potential applications in optoelectronic devices.

cond-mat.mes-hall↗

arXiv2022

Multiple topological nodal structure in LaSb2 with large linear magnetoresistance

Unconventional fermions in the immensely studied topological semimetals are the source for rich exotic topological properties. Here, using symmetry analysis and first-principles calculations, we propose the coexistence of multiple topological nodal structure in LaSb2, including topological nodal surfaces, nodal lines and in particular eightfold degenerate nodal points, which have been scarcely observed in a single material. Further, utilizing high resolution angle-resolved photoemission spectroscopy in combination with Shubnikov-de Haas quantum oscillations measurements, we confirm the existence of nodal surfaces and eightfold degenerate nodal points in LaSb2, and extract the π Berry phase proving the non-trivial electronic band structure topology therein. The intriguing multiple topological nodal structure might play a crucial role in giving rise to the large linear magnetoresistance. Our work renews the insights into the exotic topological phenomena in LaSb2 and its analogous.

cond-mat.str-el↗