arXiv subjects

Huali Yang

Publications and source records attributed to Huali Yang.

7 recordsLinked to original sources

arXiv2026

Surface Functionalization Enables Two-Dimensional Altermagnetism and Giant Tunnel Magnetoresistance

Two-dimensional (2D) altermagnets (AMs) are highly desirable for ultrafast, stray-field-free spintronics because they combine compensated magnetic order and momentum-dependent spin splitting with the scalability, tunability, and interface compatibility of atomically thin materials. However, practical 2D AMs remain scarce. Rather than relying solely on the search for intrinsic 2D AMs, an appealing route is to transform known 2D antiferromagnets (AFMs) into AMs through symmetry engineering. Here, we propose surface functionalization as a symmetry-guided, nonvolatile chemical switch for realizing this AFM-to-AM transformation. By breaking inversion and out-of-plane mirror symmetries while preserving the rotation symmetry connecting opposite-spin sublattices, single-sided functionalization lifts spin degeneracy and induces altermagnetic spin splitting. Using monolayer FeSe as a representative platform, first-principles calculations show that hydrogenation, oxidation, and fluorination convert spin-degenerate antiferromagnetic FeSe into a d-wave AM with pronounced momentum-dependent spin splitting. At the device level, our transport simulations reveal that the functionalized FeSe monolayer magnetic tunnel junctions exhibit giant tunnel magnetoresistance (TMR) up to $1.87\times10^3\%$, originating from momentum-selective spin filtering between parallel and antiparallel N\'eel-vector configurations. The strong dependence of TMR on functionalization geometry further demonstrates that surface chemistry provides an effective control knob for altermagnetic transport. Our work establishes a symmetry-to-chemistry-to-device strategy for engineering 2D AMs and developing high-performance altermagnetic spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Piezomagnetic Switching of Nonvolatile Antiferromagnetic States

Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of antiferromagnetic states remains a key challenge [2, 3]. Here, we propose a piezomagnetic writing scheme in triangular Mn3Ir-based memory cells, with readout achieved via the exchange bias effect. Our approach enables deterministic and nonvolatile switching of the antiferromagnetic states, which exhibit exceptional robustness against external perturbations. The switching mechanism is ascribed to piezomagnetic effect of Mn3Ir combined with the interfacial Dzyaloshinskii-Moriya interaction at the antiferromagnet-ferromagnet interface. This scheme overcomes the speed limitations imposed by conventional isothermal methods based on isothermal crystallization mechanism [4]. Our findings highlight the potential of piezomagnetic effects in designing advanced spintronic devices, providing an efficient pathway for manipulating antiferromagnetic states and developing energy-efficient memory technology.

cond-mat.mtrl-sci↗

arXiv2025

Large unconventional anomalous Hall effect far above room temperature in epitaxial Fe$_3$Ga$_4$ films

Noncoplanar spin textures usually exhibit a finite scalar spin chirality (SSC) that can generate effective magnetic fields and lead to additional contributions to the Hall effect, namely topological or unconventional anomalous Hall effect (UAHE). Unlike topological spin textures (e.g., magnetic skyrmions), materials that exhibit fluctuation-driven SSC and UAHE are rare. So far, their realization has been limited to either low temperatures or high magnetic fields, both of which are unfavorable for practical applications. Identifying new materials that exhibit UAHE in a low magnetic field at room temperature is therefore essential. Here, we report the discovery of a large UAHE far above room temperature in epitaxial Fe$_3$Ga$_4$ films, where the fluctuation-driven SSC stems from the field-induced transverse-conical-spiral phase. Considering their epitaxial nature and the large UAHE stabilized at room temperature in a low magnetic field, Fe$_3$Ga$_4$ films represent an exciting, albeit rare, case of a promising candidate material for spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Giant domain wall anomalous Hall effect in an antiferromagnet

Generally, the dissipationless Hall effect in solids requires time-reversal symmetry breaking (TRSB), where TRSB induced by external magnetic field results in ordinary Hall effect, while TRSB caused by spontaneous magnetization gives rise to anomalous Hall effect (AHE) which scales with the net magnetization. The AHE is therefore not expected in antiferromagnets with vanishing small magnetization. However, large AHE was recently observed in certain antiferromagnets with noncolinear spin structure and nonvanishing Berry curvature. Here, we report another origin of AHE in a layered antiferromagnet EuAl2Si2, namely the domain wall (DW) skew scattering with Weyl points near the Fermi level, in experiments for the first time. Interestingly, the DWs form a unique periodic stripe structure with controllable periodicity by external magnetic field, which decreases nearly monotonically from 975 nm at 0 T to 232 nm at 4 T. Electrons incident on DW with topological bound states experience strong asymmetric scattering, leading to a giant AHE, with the DW Hall conductivity (DWHC) at 2 K and 1.2 T reaching a record value of ~ 1,5100 S cm-1 among bulk systems and being two orders of magnitude larger than the intrinsic anomalous Hall conductivity. The observation not only sets a new paradigm for exploration of large anomalous Hall effect, but also provides potential applications in spintronic devices.

cond-mat.str-el↗

arXiv2023

Ultra-conformable Liquid Metal Particle Monolayer on Air/water Interface for Substrate-free E-tattoo

Gallium-based liquid metal is getting increased attention in conformal flexible electronics for its high electrical conductivity, intrinsic deformability and biocompatibility. A series of flexible devices are developed based on the micro-particles of liquid metal. But it is still challenging to fabricate conformal liquid metal film with a large area and high uniformity. Interfacial self-assembly is a competitive candidate method. Traditional interfacial self-assembly methods have difficulties assembling liquid metal particles because the floating state of the high-density microparticles could be easily disturbed by gravity. Here, we realized the multi-size universal self-assembly (MUS) for liquid metal particles with various diameters (0~500μm). By introducing a simple z-axis undisturbed interfacial material releasing strategy, the interference of gravitational energy on the stability of floating particles is avoided. Benefits from this, the ultra-conformable monolayer film, with large area (>100 cm2) and high floating yield (50%~90%), can be fabricated by liquid metal particles. Furthermore, the monolayer can be conformally transferred to any interesting complex surface such as human skin and plant leaf, to fabricate substrate-free flexible devices. Without interference from the mechanical response of traditional substrate, the liquid metal e-tattoo is more user-friendly and can realize feel-less continuous monitoring.

physics.app-ph↗

arXiv2021

Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor

Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal anisotropic magnetoresistance effect in an antiferromagnetic binary compound with layered structure rare-earth dichalcogenide EuTe2. The AMR reaches 40000%, which is 4 orders of magnitude larger than that in conventional antiferromagnetic alloys. Combined magnetization, resistivity, and theoretical analysis reveal that the colossal AMR effect is attributed to a novel mechanism of vector-field tunable band structure, rather than the conventional spin-orbit coupling mechanism. Moreover, it is revealed that the strong hybridization between orbitals of Eu-layer with localized spin and Te-layer with itinerant carriers is extremely important for the large AMR effect. Our results suggest a new direction towards exploring AFM materials with prominent magnetotransport properties, which creates an unprecedented opportunity for AFM spintronics applications.

cond-mat.mtrl-sci↗

arXiv2015

Multi-Fields Modulation of Physical Properties of Oxide Thin Films

Oxide thin films exhibit versatile physical properties such as magnetism, ferroelectricity, piezoelectricity, metal-insulator transition (MIT), multiferroicity, colossal magnetoresistivity, switchable resistivity, etc. More importantly, the exhibited multifunctionality could be tuned by various external fields, which has enabled demonstration of novel electronic devices. In this article, recent studies of the multi-fields modulation of physical properties in oxide thin films have been reviewed. Some of the key issues and prospects about this field are also addressed.

cond-mat.mtrl-sci↗