Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor

Huali Yang; Qing Liu; Zhaoliang Liao; Liang Si; Peiheng Jiang; Xiaolei Liu; Yanfeng Guo; Junjie Yin; Meng Wang; Zhigao Sheng; Yuxin Zhao; Zhiming Wang; Zhicheng Zhong; Run-Wei Li

arXiv · 2103.02818

Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor

Huali Yang·Qing Liu·Zhaoliang Liao·Liang Si·Peiheng Jiang·Xiaolei Liu·Yanfeng Guo·Junjie Yin·Meng Wang·Zhigao Sheng·Yuxin Zhao·Zhiming Wang·Zhicheng Zhong·Run-Wei Li

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Abstract

Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal anisotropic magnetoresistance effect in an antiferromagnetic binary compound with layered structure rare-earth dichalcogenide EuTe2. The AMR reaches 40000%, which is 4 orders of magnitude larger than that in conventional antiferromagnetic alloys. Combined magnetization, resistivity, and theoretical analysis reveal that the colossal AMR effect is attributed to a novel mechanism of vector-field tunable band structure, rather than the conventional spin-orbit coupling mechanism. Moreover, it is revealed that the strong hybridization between orbitals of Eu-layer with localized spin and Te-layer with itinerant carriers is extremely important for the large AMR effect. Our results suggest a new direction towards exploring AFM materials with prominent magnetotransport properties, which creates an unprecedented opportunity for AFM spintronics applications.

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Huali Yang, Qing Liu, Zhaoliang Liao, Liang Si, Peiheng Jiang, Xiaolei Liu, Yanfeng Guo, Junjie Yin, Meng Wang, Zhigao Sheng, Yuxin Zhao, Zhiming Wang, Zhicheng Zhong, Run-Wei Li. 2021-03-04. Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor. https://arxiv.org/abs/2103.02818

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