arXiv subjects

Huandong Chen

Publications and source records attributed to Huandong Chen.

At least 19 recordsLinked to original sources

arXiv2026

Anti-reflection coatings for highly anisotropic materials in the mid infrared

We develop and optimize thin anti-reflection coatings (ARCs) for highly anisotropic materials in the mid infrared. Unlike conventional ARCs that assume nearly isotropic refractive indices, this work fully integrates the anisotropic nature of materials into the design process. We describe two designs of thin ARCs for highly anisotropic materials: a single form-birefringent layer, and a planar bilayer. We realized the planar bilayer ARC experimentally, demonstrating excellent mid-infrared anti-reflectance across over a broad range of angles for all polarizations.

physics.optics↗

arXiv2026

Advances in electrical contacts to single crystals of emerging materials for transport measurements

Transport measurements that probe electrical resistivity of a material under varying external stimuli, such as temperature, magnetic field, optical illumination, and gate voltage, are among the most important experimental techniques in condensed matter physics. These measurements provide critical insights into the fundamental electronic properties of materials. In recent years, they have facilitated the discovery and exploration of intriguing physical phenomena (e.g., superconductivity and quantum oscillations) and unique device functionalities (e.g., photoresponse and electrostatic gating effects) in various emerging materials, particularly in the form of single crystals. However, unlike large-scale wafers or thin films, newly synthesized single crystals often pose substantial challenges in establishing reliable electrical contacts due to their irregular geometries, limited dimensions, inherent structural characteristics, and potential susceptibility to degradation. In this review, we highlight recent technological advancements in the fabrication of high-quality, lithographically defined multi-terminal electrodes on both exfoliable and non-exfoliable single crystals for transport measurements. Our work provides a practical guide for researchers seeking to select appropriate contact-fabrication strategies tailored to unique characteristics of emerging crystals.

cond-mat.mtrl-sci↗

arXiv2026

Design and fabrication of guiding patterns for topography-based searching of 2D devices for scanning tunneling microscopy measurements

We report the design and fabrication of guiding patterns for topography-based searching of two-dimensional (2D) devices for scanning tunneling microscopy (STM) measurements. Sub-micron geometric coordinate markers were etched into SiO2/Si wafers, serving as both substrates for 2D device integration and guiding maps for sample navigation. Here, we used a monolayer graphene/h-BN device with an active area of smaller than 20 um x 20 um as a model system and demonstrated that the device could be reliably located in STM solely through topographic imaging of the guiding patterns and in situ stage calibration, without reliance on optical viewports or capacitive sensing. Atomically resolved topographic imaging and tunneling spectroscopy were also obtained. Our proposed navigation strategy is fully compatible with standard device fabrication procedures and requires no hardware modification to existing STM setups. As such, it offers a practical alternative for locating miniaturized devices in STM, shedding light on studying emerging quantum phenomena in 2D systems.

cond-mat.str-el↗

arXiv2025

Emergent Atomic Scale Polarisation Vortices in BaTiS3

Topological defects, such as vortices and skyrmions in magnetic and dipolar systems, can give rise to properties that are not observed in typical magnets and dielectrics. Here, we report the discovery of long-range ordered periodic dipole arrays of atomic-scale vortices and antivortices in the unconventional charge-density-wave (CDW) phase of BaTiS3, a quasi-1D chalcogenide. Synchrotron X-ray diffraction (XRD) reveals the presence of a multi-q ordering in BaTiS3 that confines vortex-vortex-antivortex polarisation triplets to the a-b plane with alternating handedness along the c-axis. The multi-q displacive distortions are characterised by three distinctive off-centre TiS6 configurations, whose ratios are independently confirmed by 47/49Ti solid-state nuclear magnetic resonance (SSNMR). Using first-principles calculations and phenomenological modelling, we show that the dipolar vortex unit cell in BaTiS3 arises from the coupling between multiple lattice instabilities arising from flat, soft phonon bands. This mechanism contrasts with classical dipolar textures in ferroelectric heterostructures that emerge from the competition between electrostatic and strain energies. The observation of dipolar vortices in BaTiS3 brings the ultimate scaling limit for real-space dipolar topological structures down to about a nanometre and unveils the intimate connection between crystal symmetry and real-space topology. Our work sets up zero-filling semiconducting materials with competing structural instabilities as a playground for realising and understanding quantum polarisation topologies.

cond-mat.mtrl-sci↗

arXiv2025

A Practical Flake Segmentation and Indexing Pipeline for Automated 2D Material Stacking

A cost-effective and robust image-processing pipeline is presented for the detection and characterization of exfoliated two-dimensional (2D) material flakes in optical microscope images, designed to facilitate automation in van der Waals heterostructure assembly. The system combines shallow machine learning (ML)-based material classification with a precision-first flake detection algorithm driven by edge morphology and color discontinuity. Step edges are resolved when supported by optical contrast, while spurious features such as dust and background texture are reliably rejected. Each identified flake is exported in a structured format that includes centroid coordinates, bounding geometries, average RGB color, and estimated optical thickness, enabling seamless integration into automated pick-up and stacking workflows. The pipeline is hardware-light and operates without the need for deep learning models or nanoscale ground-truth labels, making it practical for scalable front-end wafer processing at a hardware cost of under 30,000 USD. In contrast to prior approaches that focus solely on detection accuracy, the proposed system unifies flake segmentation with indexing, filtering, and blueprint-driven stacking, forming a closed-loop workflow from image acquisition to device planning. Its low annotation requirement and flexible implementation enable rapid deployment across diverse 2D material systems and imaging conditions.

cond-mat.mes-hall↗

arXiv2025

Phase-change materials for volatile threshold resistive switching and neuronal device applications

Volatile threshold resistive switching and neuronal oscillations in phase-change materials, specifically those undergoing metal-to-insulator transitions, offer unique attributes such as fast and low-field volatile switching, tunability, and stochastic dynamics. These characteristics are particularly promising for emulating neuronal behaviors and solving complex computational problems. In this review, we summarize recent advances in the development of volatile resistive switching devices and neuronal oscillators based on three representative materials with coincident electronic and structural phase transitions, at different levels of technological readiness: the well-studied correlated oxide VO2, the charge-density-wave transition metal dichalcogenide 1T-TaS2, and the emerging phase-change chalcogenide perovskite BaTiS3. We discuss progresses from the perspective of materials development and device implementation. Finally, we emphasize the major challenges that must be addressed for practical applications of these phase-change materials and provide our outlook on the future research directions in this rapidly evolving field.

cond-mat.mtrl-sci↗

arXiv2025

Towards Atomic-Scale Control over Structural Modulations in Quasi-1D Chalcogenides for Colossal Optical Anisotropy

Optically anisotropic materials are sought after for tailoring the polarization of light. Recently, colossal optical anisotropy was reported in a quasi-one-dimensional chalcogenide, Sr1.125TiS3. Compared to SrTiS3, the excess Sr in Sr1.125TiS3 leads to periodic structural modulations and introduces additional electrons that undergo charge ordering on select Ti atoms to form a highly polarizable cloud oriented along the c-axis, hence, resulting in the colossolal optical anisotropy. Here, further enhancement of the colossal optical anisotropy to 2.5 in Sr1.143TiS3 is reported through control over the periodicity of the atomic-scale modulations. The role of structural modulations in tuning the optical properties in a series of SrxTiS3 compounds has been investigated using DFT calculations. The structural modulations arise from various stacking sequences of face-sharing TiS6 octahedra and twist-distorted trigonal prisms, and are found to be thermodynamically stable for x larger than 1 but smaller than 1.5. As x increases, an indirect-to-direct band gap transition is predicted for x equal to and larger than 1.143 along with an increased occupancy of Ti-dz2 states. Together, these two factors result in a theoretically predicted maximum birefriengence of 2.5 for Sr1.143TiS3. Single crystals of Sr1.143TiS3 were grown using a molten-salt flux method. Atomic-scale observations using scanning transmission electron microscopy confirm the feasibility of synthesizing SrxTiS3 with varied modulation periodicities. Overall, these findings demonstrate compositonal tunability of optical properties in SrxTiS3 compounds, and potentially in other hexagonal perovskites having structural modulations.

cond-mat.mtrl-sci↗

arXiv2024

Strain-driven stabilization of a room-temperature chiral multiferroic with coupled ferroaxial and ferroelectric order

Noncollinear ferroic materials are sought after as testbeds to explore the intimate connections between topology and symmetry, which result in electronic, optical and magnetic functionalities not observed in collinear ferroic materials. For example, ferroaxial materials have ordered rotational structural distortions that break mirror symmetry and induce chirality. When ferroaxial order is coupled with ferroelectricity arising from a broken inversion symmetry, it offers the prospect of electric-field-control of the ferroaxial distortions and opens up new tunable functionalities. However, chiral multiferroics, especially ones stable at room temperature, are rare. We report the discovery of a strain-stabilized, room-temperature chiral multiferroic phase in single crystals of BaTiS$_3$, a quasi-one-dimensional (1D) hexagonal chalcogenide. Using first-principles calculations, we predict the stabilization of this multiferroic phase having $P6_3$ space group for biaxial tensile strains exceeding 1.5% applied on the basal ab-plane of the room temperature $P6_3cm$ phase of BaTiS$_3$. The chiral multiferroic phase is characterized by rotational distortions of select TiS$_6$ octahedra around the long $c$-axis and polar displacement of Ti atoms along the $c$-axis. We used an innovative approach using focused ion beam milling to make appropriately strained samples of BaTiS$_3$. The ferroaxial and ferroelectric distortions, and their domains in $P6_3$-BaTiS$_3$ were directly resolved using atomic resolution scanning transmission electron microscopy. Landau-based phenomenological modeling predicts a strong coupling between the ferroelectric and the ferroaxial order making $P6_3$-BaTiS$_3$ an attractive test bed for achieving electric-field control of chirality-related phenomena such as circular photo-galvanic current and the Rashba effect.

cond-mat.mtrl-sci↗

arXiv2024

A strategy for fabricating micro-scale freestanding single-crystalline complex oxide device arrays

We present a general fabrication strategy for freestanding single-crystalline complex oxide device arrays via wet chemical etching-based microfabrication processes and epitaxial lift-off. Here, we used 0.5Ba(Zr$_{0.2}$Ti$_{0.8}$)O$_3$-0.5Ba(Zr$_{0.7}$Ti$_{0.3}$)O$_3$ (BCZT) as a model relaxor ferroelectric oxide system and La$_{0.7}$Sr$_{0.3}$MnO$_3$ as the sacrificial layer for demonstration. Arrays of SrRuO$_3$ (SRO) / BCZT / SRO ferroelectric capacitor mesas were first defined and isolated on the growth wafer, and then they were released using epitaxial lift-off with lithography-defined surrounding etching holes, after which the freestanding device arrays were integrated onto a glass substrate. Our proposed strategy sheds light on preparing various freestanding single-crystalline oxide devices and paves the way for their heterogeneous integration onto arbitrary substates.

cond-mat.mtrl-sci↗

arXiv2024

Electrical contacts for high performance optoelectronic devices of BaZrS3 single crystals

Chalcogenide perovskites such as BaZrS3 are promising candidates for next generation optoelectronics such as photodetectors and solar cells. Compared to widely studied polycrystalline thin films, single crystals of BaZrS3 with minimal extended and point defects, are ideal platform to study the material's intrinsic transport properties and to make first-generation optoelectronic devices. However, the surface dielectrics formed on BaZrS3 single crystals due to sulfating or oxidation have led to significant challenges to achieving high quality electrical contacts, and hence, realizing the high-performance optoelectronic devices. Here, we report the development of electrical contact fabrication processes on BaZrS3 single crystals, where various processes were employed to address the surface dielectric issue. Moreover, with optimized electrical contacts fabricated through dry etching, high-performance BaZrS3 photoconductive devices with a low dark current of 0.1 nA at 10 V bias and a fast transient photoresponse with rise and decay time of <0.2 s were demonstrated.

cond-mat.mtrl-sci↗

arXiv2024

Kinetic control of ferroelectricity in ultrathin epitaxial Barium Titanate capacitors

Ferroelectricity is characterized by the presence of spontaneous and switchable macroscopic polarization. Scaling limits of ferroelectricity have been of both fundamental and technological importance, but the probes of ferroelectricity have often been indirect due to confounding factors such as leakage in the direct electrical measurements. Recent interest in low-voltage switching electronic devices squarely puts the focus on ultrathin limits of ferroelectricity in an electronic device form, specifically on the robustness of ferroelectric characteristics such as retention and endurance for practical applications. Here, we illustrate how manipulating the kinetic energy of the plasma plume during pulsed laser deposition can yield ultrathin ferroelectric capacitor heterostructures with high bulk and interface quality, significantly low leakage currents and a broad "growth window". These heterostructures venture into previously unexplored aspects of ferroelectric properties, showcasing ultralow switching voltages ($<$0.3 V), long retention times ($>$10$^{4}$s), and high endurance ($>$10$^{11}$cycles) in 20 nm films of the prototypical perovskite ferroelectric, BaTiO$_{3}$. Our work demonstrates that materials engineering can push the envelope of performance for ferroelectric materials and devices at the ultrathin limit and opens a direct, reliable and scalable pathway to practical applications of ferroelectrics in ultralow voltage switches for logic and memory technologies.

physics.app-ph↗

arXiv2024

A system built for both deterministic transfer processes and contact photolithography

A home-built compact system that functions as both a transfer stage for deterministic transfer processes and a mask aligner for contact photolithography, is constructed. The precision translation sample stage and optical microscope are shared between the two modes. In the transfer mode, assisted by either an adhesive or a heating element, the setup has been used to deterministically transfer freestanding semiconductors, 2D materials, and van der Waals electrodes. When configured in photolithography mode, the proposed instrument has been employed to fabricate various micro-scale patterns and devices, with minimum feature sizes of ~1-2 um achieved. Our prototype instrument provides a feasible solution for preforming high quality deterministic transfer and photolithography processes on one single tool in house.

physics.app-ph↗

arXiv2024

Giant Modulation of Refractive Index from Picoscale Atomic Displacements

Structural disorder has been shown to enhance and modulate magnetic, electrical, dipolar, electrochemical, and mechanical properties of materials. However, the possibility of obtaining novel optical and optoelectronic properties from structural disorder remains an open question. Here, we show unambiguous evidence of disorder in the form of anisotropic, picoscale atomic displacements modulating the refractive index tensor and resulting in the giant optical anisotropy observed in BaTiS$_3$, a quasi-one-dimensional hexagonal chalcogenide. Single crystal X-ray diffraction studies reveal the presence of antipolar displacements of Ti atoms within adjacent TiS$_6$ chains along the c-axis, and three-fold degenerate Ti displacements in the a-b plane. $^{47/49}$Ti solid-state NMR provides additional evidence for those Ti displacements in the form of a three-horned NMR lineshape resulting from a low symmetry local environment around Ti atoms. We used scanning transmission electron microscopy to directly observe the globally disordered Ti a-b plane displacements and find them to be ordered locally over a few unit cells. First-principles calculations show that the Ti a-b plane displacements selectively reduce the refractive index along the ab-plane, while having minimal impact on the refractive index along the chain direction, thus resulting in a giant enhancement in the optical anisotropy. By showing a strong connection between structural disorder with picoscale displacements and the optical response in BaTiS$_3$, this study opens a pathway for designing optical materials with high refractive index and functionalities such as large optical anisotropy and nonlinearity.

cond-mat.mtrl-sci↗

arXiv2024

Molten flux growth of single crystals of quasi-1D hexagonal chalcogenide BaTiS3

BaTiS3, a quasi-1D complex chalcogenide, has gathered considerable scientific and technological interest due to its giant optical anisotropy and electronic phase transitions. However, the synthesis of high-quality BaTiS3 crystals, particularly those featuring crystal sizes of millimeters or larger, remains a challenge. Here, we investigate the growth of BaTiS3 crystals utilizing a molten salt flux of either potassium iodide, or a mixture of barium chloride and barium iodide. The crystals obtained through this method exhibit a substantial increase in volume compared to those synthesized via the chemical vapor transport method, while preserving their intrinsic optical and electronic properties. Our flux growth method provides a promising route towards the production of high-quality, large-scale single crystals of BaTiS3, which will greatly facilitate advanced characterizations of BaTiS3 and its practical applications that require large crystal dimensions. Additionally, our approach offers an alternative synthetic route for other emerging complex chalcogenides.

cond-mat.mtrl-sci↗

arXiv2023

A hybrid pulsed laser deposition approach to grow thin films of chalcogenides

Vapor-pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor-pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, we report a novel approach to grow chalcogenides - hybrid pulsed laser deposition - wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state-of-the-art. The growth method can be broadened to other vapor-pressure mismatched chalcogenides such as selenides and tellurides. Our work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide-based thin film technological applications.

cond-mat.mtrl-sci↗

arXiv2023

Photoconductive Effects in Single Crystals of BaZrS$_3$

Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$.

physics.app-ph↗

arXiv2023

Colossal optical anisotropy from atomic-scale modulations

In modern optics, materials with large birefringence (Δn, where n is the refractive index) are sought after for polarization control (e.g. in wave plates, polarizing beam splitters, etc.), nonlinear optics and quantum optics (e.g. for phase matching and production of entangled photons), micromanipulation, and as a platform for unconventional light-matter coupling, such as Dyakonov-like surface polaritons and hyperbolic phonon polaritons. Layered "van der Waals" materials, with strong intra-layer bonding and weak inter-layer bonding, can feature some of the largest optical anisotropy; however, their use in most optical systems is limited because their optic axis is out of the plane of the layers and the layers are weakly attached, making the anisotropy hard to access. Here, we demonstrate that a bulk crystal with subtle periodic modulations in its structure -- Sr9/8TiS3 -- is transparent and positive-uniaxial, with extraordinary index n_e = 4.5 and ordinary index n_o = 2.4 in the mid- to far-infrared. The excess Sr, compared to stoichiometric SrTiS3, results in the formation of TiS6 trigonal-prismatic units that break the infinite chains of face-shared TiS6 octahedra in SrTiS3 into periodic blocks of five TiS6 octahedral units. The additional electrons introduced by the excess Sr subsequently occupy the TiS6 octahedral blocks to form highly oriented and polarizable electron clouds, which selectively boost the extraordinary index n_e and result in record birefringence (Δn > 2.1 with low loss). The connection between subtle structural modulations and large changes in refractive index suggests new categories of anisotropic materials and also tunable optical materials with large refractive-index modulation and low optical losses.

physics.optics↗

arXiv2023

Charge-density-wave resistive switching and voltage oscillations in ternary chalcogenide BaTiS3

Phase change materials, which show different electrical characteristics across the phase transitions, have attracted considerable research attention for their potential electronic device applications. Materials with metal-to-insulator or charge density wave (CDW) transitions such as VO2 and 1T-TaS2 have demonstrated voltage oscillations due to their robust bi-state resistive switching behavior with some basic neuronal characteristics. BaTiS3 is a small bandgap ternary chalcogenide that has recently reported the emergence CDW order below 245 K. Here, we report on the discovery of DC voltage / current-induced reversible threshold switching in BaTiS3 devices between a CDW phase and a room temperature semiconducting phase. The resistive switching behavior is consistent with a Joule heating scheme and sustained voltage oscillations with a frequency of up to 1 kHz has been demonstrated by leveraging the CDW phase transition and the associated negative differential resistance. Strategies of reducing channel sizes and improving thermal management may further improve the device performance. Our findings establish BaTiS3 as a promising CDW material for future energy-efficient electronics, especially for neuromorphic computing.

cond-mat.mtrl-sci↗