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Huaqing Huang

Publications and source records attributed to Huaqing Huang.

At least 55 records · Page 3Linked to original sources

Quantum Spin Hall Effect and Spin Bott Index in a Quasicrystal Lattice

Despite the rapid progresses in the field of quantum spin Hall (QSH) effect, most of the QSH systems studied up to now are based on crystalline materials. Here we propose that the QSH effect can be realized in quasicrystal lattices (QLs). We show that the electronic topology of aperiodic and amorphous insulators can be characterized by a spin Bott index $B_s$. The nontrivial QSH state in a QL is identified by a nonzero spin Bott index $B_s=1$, associated with robust edge states and quantized conductance. We also map out a topological phase diagram in which the QSH state lies in between a normal insulator and a weak metal phase due to the unique wavefunctions of QLs. Our findings not only provide a better understanding of electronic properties of quasicrystals but also extend the search of QSH phase to aperiodic and amorphous materials that are experimentally feasible.

cond-mat.mes-hall↗

Observation of Topological Surface State in High Temperature Superconductor MgB2

The hunt for the benchmark topological superconductor (TSc) has been an extremely active research subject in condensed matter research, with quite a few candidates identified or proposed. However, low transition temperatures (Tc) and/or strong sensitivity to disorder and dopant levels in known TSc candidates have greatly hampered progress in this field. Here, we use Angle-resolved Photoemission Spectroscopy (ARPES) to show the presence of Dirac Nodal Lines (DNLs) and the corresponding topological surface states (TSS's) on the [010] faces of the Tc=39K s-wave BCS superconductor MgB2. Not only is this nearly triple the current record of superconducting Tc among all candidate TSc's, but the nature of these DNL states should make them highly tolerant against disorder and inadvertent doping variations. This makes MgB2 a promising high temperature platform for the study of topological superconductivity.

cond-mat.supr-con↗

Alloy engineering of topological semimetal phase transition in MgTa$_{2-x}$Nb$_x$N$_3$

Dirac, triple-point and Weyl fermions represent three topological semimetal phases, characterized with a descending degree of band degeneracy, which have been realized separately in specific crystalline materials with different lattice symmetries. Here we demonstrate an alloy engineering approach to realize all three types of fermions in one single material system of MgTa$_{2-x}$Nb$_x$N$_3$. Based on symmetry analysis and first-principles calculations, we map out a phase diagram of topological order in the parameter space of alloy concentration and crystalline symmetry, where the intrinsic MgTa$_2$N$_3$ with the highest symmetry hosts the Dirac semimetal phase which transforms into the triple-point and then the Weyl semimetal phase with the increasing Nb concentration that lowers the crystalline symmetries. Therefore, alloy engineering affords a unique approach for experimental investigation of topological transitions of semimetallic phases manifesting different fermionic behaviors.

cond-mat.mtrl-sci↗

Ubiquitous Ideal Spin-Orbit Coupling in a Screw Dislocation in Semiconductors

We theoretically demonstrate that screw dislocation (SD), a 1D topological defect widely present in semiconductors, exhibits ubiquitously a new form of spin-orbit coupling (SOC) effect. Differing from the widely known conventional 2D Rashba-Dresselhaus (RD) SOC effect that typically exists at surfaces/interfaces, the deep-level nature of SD-SOC states in semiconductors readily makes it an ideal SOC. Remarkably, the spin texture of 1D SD-SOC, pertaining to the inherent symmetry of SD, exhibits a significantly higher degree of spin coherency than the 2D RD-SOC. Moreover, the 1D SD-SOC can be tuned by ionicity in compound semiconductors to ideally suppress spin relaxation, as demonstrated by comparative first-principles calculations of SDs in Si/Ge, GaAs, and SiC. Our findings therefore open a new door to manipulating spin transport in semiconductors by taking advantage of an otherwise detrimental topological defect.

cond-mat.mtrl-sci↗

Li doping kagome spin liquid compounds

Herbertsmithite and Zn-doped barlowite are two compounds for experimental realization of twodimensional gapped kagome spin liquid. Theoretically, it has been proposed that charge doping a quantum spin liquid gives rise to exotic metallic states, such as high-temperature superconductivity. However, one recent experiment about herbertsmithite with successful Li-doping shows surprisingly the insulating state even under the heavy doped scenario, which can hardly be explained by many-body physics. Using first-principles calculation, we performed a comprehensive study about the Li intercalated doping effect of these two compounds. For the Li-doped herbertsmithite, we identified the optimized Li position at the Cl-(OH)$_3$-Cl pentahedron site instead of previously speculated Cl-(OH)$_3$ tetrahedral site. With the increase of Li doping concentration, the saturation magnetization decreases linearly due to the charge transfer from Li to Cu ions. Moreover, we found that Li forms chemical bonds with the nearby (OH)$^-$ and Cl$^-$ ions, which lowers the surrounding chemical potential and traps the electron, as evidenced by the localized charge distribution, explaining the insulating behavior measured experimentally. Though with different structure from herbertsmithite, Zn-doped Barlowite shows the same features upon Li doping. We conclude that Li doping this family of kagome spin liquid cannot realize exotic metallic states, other methods should be further explored, such as element substitution with different valence electrons.

cond-mat.str-el↗

Black Hole Horizon in a Type-III Dirac Semimetal Zn$_2$In$_2$S$_5$

Recently, realizing new fermions, such as type-I and type-II Dirac/Weyl fermions in condensed matter systems, has attracted considerable attention. Here we show that the transition state from type-I to type-II Dirac fermions can be viewed as a type-III Dirac fermion, which exhibits unique characteristics, including a Dirac-line Fermi surface with nontrivial topological invariant and critical chiral anomaly effect, distinct from previously known Dirac semimetals. Most importantly, we discover Zn$_2$In$_2$S$_5$ is a type-III Dirac semimetal material, characterized with a pair of Dirac points in the bulk and Fermi arcs on the surface. We further propose a solid-state realization of the black-hole-horizon analogue in inhomogeneous Zn$_2$In$_2$S$_5$ to simulate black hole evaporation with high Hawking temperature. We envision that our findings will stimulate researchers to study novel physics of type-III Dirac fermions, as well as astronomical problems in a condensed matter analogue.

cond-mat.mes-hall↗

Experimental evidence of type-II Dirac fermions in PtSe2

Topological semimetals have attracted extensive research interests for realizing condensed matter physics counterparts of three-dimensional Dirac and Weyl fermions, which were originally introduced in high energy physics. Recently it has been proposed that type-II Dirac semimetal can host a new type of Dirac fermions which break Lorentz invariance and therefore does not have counterpart in high energy physics. Here we report the electronic structure of high quality PtSe$_2$ crystals to provide direct evidence for the existence of three-dimensional type-II Dirac fermions. A comparison of the crystal, vibrational and electronic structure to a sister compound PtTe$_2$ is also discussed. Our work provides an important platform for exploring the novel quantum phenomena in the PtSe$_2$ class of type-II Dirac semimetals.

cond-mat.mtrl-sci↗

Tensile Strained Gray Tin: a New Dirac Semimetal for Observing Negative Magnetoresistance with Shubnikov-de-Haas Oscillation

The extremely stringent requirement on material quality has hindered the investigation and potential applications of exotic chiral magnetic effect in Dirac semimetals. Here, we propose that gray tin is a perfect candidate for observing the chiral anomaly effect and Shubnikov-de-Haas (SdH) oscillation at relatively low magnetic field. Based on effective $k.p$ analysis and first-principles calculations, we discover that gray tin becomes a Dirac semimetal under tensile uniaxial strain, in contrast to a topological insulator under compressive uniaxial strain as known before. In this newly found Dirac semimetal state, two Dirac points which are tunable by tensile [001] strains, lie in the $k_z$ axis and Fermi arcs appear in the (100) surface. Duo the low carrier concentration and high mobility of gray tin, a large chiral anomaly induced negative magnetoresistance and a strong SdH oscillation are anticipated in this half of strain spectrum. Comparing to other Dirac semimetals, the proposed Dirac semimetal state in the nontoxic elemental gray tin can be more easily manipulated and accurately controlled. We envision that gray tin provides a perfect platform for strain engineering of chiral magnetic effects by sweeping through the strain spectrum from positive to negative and vice versa.

cond-mat.mtrl-sci↗

Type-II Dirac fermions in the PtSe$_2$ class of transition metal dichalcogenides

Recently, a new "type-II" Weyl fermion, which exhibits exotic phenomena such as angle-dependent chiral anomaly, was discovered in a new phase of matter where electron and hole pockets contact at isolated Weyl points. [Nature \textbf{527}, 495 (2015)] This raises an interesting question whether its counterpart, i.e., type-II \textit{Dirac} fermion, exists in real materials. Here, we predict the existence of symmetry-protected type-II Dirac fermions in a class of transition metal dichalcogenide materials. Our first-principles calculations on PtSe$_2$ reveal its bulk type-II Dirac fermions which are characterized by strongly tilted Dirac cones, novel surface states, and exotic doping-driven Lifshitz transition. Our results show that the existence of type-II Dirac fermions in PtSe$_2$-type materials is closely related to its structural $P\bar{3}m1$ symmetry, which provides useful guidance for the experimental realization of type-II Dirac fermions and intriguing physical properties distinct from those of the standard Dirac fermions known before.

cond-mat.mtrl-sci↗

Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2

Weyl semimetal is a new quantum state of matter [1-12] hosting the condensed matter physics counterpart of relativisticWeyl fermion [13] originally introduced in high energy physics. The Weyl semimetal realized in the TaAs class features multiple Fermi arcs arising from topological surface states [10, 11, 14-16] and exhibits novel quantum phenomena, e.g., chiral anomaly induced negative mag-netoresistance [17-19] and possibly emergent supersymmetry [20]. Recently it was proposed theoretically that a new type (type-II) of Weyl fermion [21], which does not have counterpart in high energy physics due to the breaking of Lorentz invariance, can emerge as topologically-protected touching between electron and hole pockets. Here, we report direct spectroscopic evidence of topological Fermi arcs in the predicted type-II Weyl semimetal MoTe2 [22-24]. The topological surface states are confirmed by directly observing the surface states using bulk-and surface-sensitive angle-resolved photoemission spectroscopy (ARPES), and the quasi-particle interference (QPI) pattern between the two putative Fermi arcs in scanning tunneling microscopy (STM). Our work establishes MoTe2 as the first experimental realization of type-II Weyl semimetal, and opens up new opportunities for probing novel phenomena such as exotic magneto-transport [21] in type-II Weyl semimetals.

cond-mat.mes-hall↗

Electronic properties of SnTe-class topological crystalline insulator materials

The rise of topological insulators in recent years has broken new ground both in the conceptual cognition of condensed matter physics and the promising revolution of the electronic devices. It also stimulates the explorations of more topological states of matter. Topological crystalline insulator is a new topological phase, which combines the electronic topology and crystal symmetry together. In this article, we review the recent progress in the studies of SnTe-class topological crystalline insulator materials. Starting from the topological identifications in the aspects of the bulk topology, surface states calculations and experimental observations, we present the electronic properties of topological crystalline insulators under various perturbations, including native defect, chemical doping, strain, and thickness-dependent confinement effects, and then discuss their unique quantum transport properties, such as valley-selective filtering and helicity-resolved functionalities for Dirac fermions. The rich properties and high tunability make SnTe-class materials promising candidates for novel quantum devices.

cond-mat.mtrl-sci↗

Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$

Topological semimetals have recently attracted extensive research interests as host materials to condensed matter physics counterparts of Dirac and Weyl fermions originally proposed in high energy physics. These fermions with linear dispersions near the Dirac or Weyl points obey Lorentz invariance, and the chiral anomaly leads to novel quantum phenomena such as negative magnetoresistance. The Lorentz invariance is, however, not necessarily respected in condensed matter physics, and thus Lorentz-violating type-II Dirac fermions with strongly tilted cones can be realized in topological semimetals. Here, we report the first experimental evidence of type-II Dirac fermions in bulk stoichiometric PtTe$_2$ single crystal. Angle-resolved photoemission spectroscopy (ARPES) measurements and first-principles calculations reveal a pair of strongly tilted Dirac cones along the $Γ$-A direction under the symmetry protection, confirming PtTe$_2$ as a type-II Dirac semimetal. The realization of type-II Dirac fermions opens a new door for exotic physical properties distinguished from type-I Dirac fermions in condensed matter materials.

cond-mat.mtrl-sci↗

Topological nodal-line semimetals in alkaline-earth stannides, germanides and silicides

Based on first-principles calculations and an effective Hamiltonian analysis, we systematically investigate the electronic and topological properties of alkaline-earth compounds $AX_2$ ($A$=Ca, Sr, Ba; $X$=Si, Ge, Sn). Taking BaSn$_2$ as an example, we find that when spin-orbit coupling is ignored, these materials are three-dimensional topological nodal-line semimetals characterized by a snake-like nodal loop in three-dimensional momentum space. Drumhead-like surface states emerge either inside or outside the loop circle on the (001) surface depending on surface termination, while complicated double-drumhead-like surface states appear on the (010) surface. When spin-orbit coupling is included, the nodal line is gapped and the system becomes a topological insulator with Z$_2$ topological invariants (1;001). Since spin-orbit coupling effects are weak in light elements, the nodal-line semimetal phase is expected to be achievable in some alkaline-earth germanides and silicides.

cond-mat.mtrl-sci↗

Direct observation of local Rashba spin polarization and spin-layer locking in centrosymmetric monolayer PtSe$_2$

The generally accepted view that spin polarization is induced by the asymmetry of the global crystal space group has limited the search for spintronics [1] materials to non-centrosymmetric materials. Recently it has been suggested that spin polarization originates fundamentally from local atomic site asymmetries [2], and therefore centrosymmetric materials may exhibit previously overlooked spin polarizations. Here by using spin- and angle-resolved photoemission spectroscopy (spin-ARPES), we report helical spin texture induced by local Rashba effect (R-2) in centrosymmetric monolayer PtSe$_2$ film. First-principles calculations and effective analytical model support the spin-layer locking picture: in contrast to the spin splitting in conventional Rashba effect (R-1), the opposite spin polarizations induced by R-2 are degenerate in energy while spatially separated in the top and bottom Se layers. These results not only enrich our understanding of spin polarization physics, but also may find applications in electrically tunable spintronics.

cond-mat.mtrl-sci↗

Theory of the Dirac Half Metal and Quantum Anomalous Hall Effect in Mn Intercalated Epitaxial Graphene

The prospect of a Dirac half metal, a material which is characterized by a bandstructure with a gap in one spin channel but a Dirac cone in the other, is of both fundamental interest and a natural candidate for use in spin-polarized current applications. However, while the possibility of such a material has been reported based on model calculations[H. Ishizuka and Y. Motome, Phys. Rev. Lett. 109, 237207 (2012)], it remains unclear what material system might realize such an exotic state. Using first-principles calculations, we show that the experimentally accessible Mn intercalated epitaxial graphene on SiC(0001) transits to a Dirac half metal when the coverage is > 1/3 monolayer. This transition results from an orbital-selective breaking of quasi-2D inversion symmetry, leading to symmetry breaking in a single spin channel which is robust against randomness in the distribution of Mn intercalates. Furthermore, the inclusion of spin-orbit interaction naturally drives the system into the quantum anomalous Hall (QAH) state. Our results thus not only demonstrate the practicality of realizing the Dirac half metal beyond a toy model but also open up a new avenue to the realization of the QAH effect.

cond-mat.str-el↗

Emergence of a Chern-insulating state from a semi-Dirac dispersion

A Chern insulator (quantum anomalous Hall insulator) phase is demonstrated to exist in a typical semi-Dirac system, the TiO2/VO2 heterostructure. By combining first-principles calculations with Wannier-based tight-binding model, we calculate the Berry curvature distribution, finding a Chern number of -2 for the valence bands, and demonstrate the existence of gapless chiral edge states, ensuring quantization of the Hall conductivity to 2e^2/h. A new semi-Dirac model, where each semi-Dirac cone is formed by merging three conventional Dirac points, is proposed to reveal how the nontrivial topology with finite Chern number is compatible with a semi-Dirac electronic spectrum.

cond-mat.mtrl-sci↗

Stable two-dimensional dumbbell stanene: a quantum spin Hall insulator

We predict from first-principles calculations a novel structure of stanene with dumbbell units (DB), and show that it is a two-dimensional topological insulator with inverted band gap which can be tuned by compressive strain. Furthermore, we propose that the boron nitride sheet and reconstructed ($2\times2$) InSb(111) surfaces are ideal substrates for the experimental realization of DB stanene, maintaining its non-trivial topology. Combined with standard semiconductor technologies, such as magnetic doping and electrical gating, the quantum anomalous Hall effect, Chern half metallicity and topological superconductivity can be realized in DB stanene on those substrates. These properties make the two-dimensional supported stanene a good platform for the study of new quantum spin Hall insulator as well as other exotic quantum states of matter.

cond-mat.mes-hall↗

Quantum anomalous Hall phase in (001) double-perovskite monolayers via intersite spin-orbit coupling

Using tight-binding models and first-principles calculations, we demonstrate the possibility to achieve a quantum anomalous Hall (QAH) phase on a two-dimensional square lattice, which can be realized in monolayers of double perovskites. We show that effective intersite spin-orbit coupling between eg orbitals can be induced perturbatively, giving rise to a QAH state. Moreover, the effective spin-orbit coupling can be enhanced by octahedral rotations. Based on first-principles calculations, we propose that this type of QAH state could be realized in La2MnIrO6 monolayers, with the size of the gap as large as 26 meV in the ideal case. We observe that the electronic structure is sensitive to structural distortions, and that an enhanced Hubbard U tends to stabilize the nontrivial gap.

cond-mat.mtrl-sci↗