arXiv subjects

Hwayong Noh

Publications and source records attributed to Hwayong Noh.

7 recordsLinked to original sources

arXiv2026

Observation of Macroscopic Nonlocal Voltage at Room Temperature

Electrons in conductors suffer frequent scatterings with defects and phonons, and the diffusive macroscopic behaviors are determined by an external electric field through Ohms law. If electrons are no longer diffusive, the Ohmic description collapses. In devices composed of thin chalcogenides and YBa2Cu3O7, we observe a transition from an Ohmic conductor to a nonlocal conductor below a certain temperature. The nonlocal conductor is characterized by significant nonlocal voltages (~0.1 V) across macroscopic regions (~1 mm) that are conventionally considered to be equipotential. Nonlinear responses are an additional characteristic. Negative local resistances in a vicinal geometry support macroscopic hydrodynamic flow as the underlying mechanism, implying electron momentum conservation over incredibly long distances. This new conduction state, observable at room temperature, opens the field of nonlocal electronics and low-dissipation applications.

cond-mat.str-el↗

arXiv2009

Anomalous Corrections to Hall Resistivity of Spin-Polarized Two-Dimensional Holes in a GaAs/AlGaAs Heterostructure

Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The anomalous negative corrections increase with the perpendicular magnetization of the two-dimensional hole system. We attribute this to the anomalous Hall effect of spin-polarized carriers in a nonmagnetic system. The anomalous corrections to the conductivity exhibit non-monotonic dependence on the magnetic field.

cond-mat.mes-hall↗

arXiv2004

Magnetic Field Induced Insulating Phases at Large $r_s$

Exploring a backgated low density two-dimensional hole sample in the large $r_s$ regime we found a surprisingly rich phase diagram. At the highest densities, beside the $ν=1/3$, 2/3, and 2/5 fractional quantum Hall states, we observe both of the previously reported high field insulating and reentrant insulating phases. As the density is lowered, the reentrant insulating phase initially strengthens, then it unexpectedly starts weakening until it completely dissapears. At the lowest densities the terminal quantum Hall state moves from $ν=1/3$ to $ν=1$. The intricate behavior of the insulating phases can be explained by a non-monotonic melting line in the $ν$-$r_s$ phase space.

cond-mat.mes-hall↗

arXiv2003

In-Plane Magnetodrag between Dilute Two-Dimensional Systems

We performed in-plane magnetodrag measurements on dilute double layer two-dimensional hole systems, at in-plane magnetic fields that suppress the apparent metallic behavior, and to fields well above those required to fully spin polarize the system. When compared to the single layer magnetoresistance, the magnetodrag exhibits exactly the same qualitative behavior. In addition, we have found that the enhancement to the drag from the in-plane field exhibits a strong maximum when both layer densities are matched.

cond-mat.str-el↗

arXiv2003

Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than $e^{2}/h$. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

cond-mat.mes-hall↗

arXiv2002

Interaction Corrections to Two-Dimensional Hole Transport in Large $r_{s}$ Limit

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter $F_{0}^σ$ determined from the experiment, however, decreases with increasing $r_{s}$ for $r_{s}\agt22$, a behavior unexpected from existing theoretical calculations valid for small $r_{s}$.

cond-mat.mes-hall↗

arXiv2002

Frictional Drag between Two Dilute Two-Dimensional Hole Layers

We report drag measurements on dilute double layer two-dimensional hole systems in the regime of r_s=19~39. We observed a strong enhancement of the drag over the simple Boltzmann calculations of Coulomb interaction, and deviations from the T^2 dependence which cannot be explained by phonon-mediated, plasmon-enhanced, or disorder-related processes. We suggest that this deviation results from interaction effects in the dilute regime.

cond-mat.mes-hall↗