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Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs

Hwayong Noh·M. P. Lilly·D. C. Tsui·J. A. Simmons·L. N. Pfeiffer·K. W West
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Abstract

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than $e^{2}/h$. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

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Hwayong Noh, M. P. Lilly, D. C. Tsui, J. A. Simmons, L. N. Pfeiffer, K. W West. 2003-01-16. Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs. https://doi.org/10.1103/physrevb.68.241308

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