Skyrmion phase in MnSi on sapphire grown by a conventional sputtering
Topologically protected chiral skyrmion is an intriguing spin texture, which has attracted much attention because of fundamental research and future spintronic applications. MnSi with the non-centrosymmetric structure is well-known material hosting skyrmion phase. To date, preparation of MnSi crystals has been investigated by using special instruments with ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on sapphire, which is in relatively low vacuum environment of conventional magnetron sputtering. Magnetotransport properties including Hall resistivity measurements allow to confirm the existence of skyrmion phase in MnSi film. Because as-grown MnSi films on sapphire has polycrystalline nature, the emergent features of skyrmion phase are limited and complicated. However, we observed the stable skyrmion phase in a broad range of temperatures and magnetic fields, which is explained by phenomenological scaling analyses of Hall resistivities contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phase, but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.