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arXiv · 1901.09524

Structural, magnetic, and electrical properties of collinear antiferromagnetic heteroepitaxy cubic Mn$_3$Ga thin films

Hyun-Woo Bang·Woosuk Yoo·Chungman Kim·Sunghun Lee·Jiyeong Gu·Yunchang Park·Kyujoon Lee·Myung-Hwa Jung
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Abstract

Although a cubic phase of Mn$_3$Ga with an antiferromagnetic order has been theoretically predicted, it has not been experimentally verified in a bulk or film form. Here, we report the structural, magnetic, and electrical properties of antiferromagnetic cubic Mn$_3$Ga (C-Mn$_3$Ga) thin films, in comparison with ferrimagnetic tetragonal Mn$_3$Ga (T-Mn3Ga). The structural analyses reveal that C-Mn$_3$Ga is hetero-epitaxially grown on MgO substrate with the Cu$_3$Au-type cubic structure, which transforms to T-Mn$_3$Ga as the RF sputtering power increases. The magnetic and magnetotransport data show the antiferromagnetic transition at T$_N$ = 400 K for C-Mn$_3$Ga and the ferrimagnetic transition at T$_C$ = 820 K for T-Mn$_3$Ga. Furthermore, we find that the antiferromagnetic C-Mn$_3$Ga exhibits a higher electrical resistivity than the ferrimagnetic T-Mn$_3$Ga, which can be understood by spin-dependent scattering mechanism.

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Hyun-Woo Bang, Woosuk Yoo, Chungman Kim, Sunghun Lee, Jiyeong Gu, Yunchang Park, Kyujoon Lee, Myung-Hwa Jung. 2019-01-28. Structural, magnetic, and electrical properties of collinear antiferromagnetic heteroepitaxy cubic Mn$_3$Ga thin films. https://doi.org/10.1063/1.5088790

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