arXiv subjects

I. Galbraith

Publications and source records attributed to I. Galbraith.

5 recordsLinked to original sources

arXiv2008

Photon emission induced by elastic exciton--carrier scattering in semiconductor quantum wells

We present a study of the elastic exciton--electron ($X-e^-$) and exciton--hole ($X-h$) scattering processes in semiconductor quantum wells, including fermion exchange effects. The balance between the exciton and the free carrier populations within the electron-hole plasma is discussed in terms of ionization degree in the nondegenerate regime. Assuming a two-dimensional Coulomb potential statically screened by the free carrier gas, we apply the variable phase method to obtain the excitonic wavefunctions, which we use to calculate the 1$s$ exciton--free carrier matrix elements that describe the scattering of excitons into the light cone where they can radiatively recombine. The photon emission rates due to the carrier-assisted exciton recombination in semiconductor quantum-wells (QWs) at room temperature and in a low density regime are obtained from Fermi's golden rule, and studied for mid-gap and wide-gap materials. The quantitative comparison of the direct and exchange terms of the scattering matrix elements shows that fermion exchange is the dominant mechanism of the exciton--carrier scattering process. This is confirmed by our analysis of the rates of photon emission induced by electron-assisted and hole-assisted exciton recombinations.

cond-mat.other↗

arXiv2001

Exciton/free-carrier plasma in GaN-based quantum wells: Scattering and screening

The degree of ionisation of a two-dimensional electron-hole plasma is calculated in the low-density (Boltzmann) limit. The electron-hole interaction is considered for all states: optically active and inactive, bound and unbound. The theory is applied to exciton/free-carrier plasma in GaN-based quantum wells at room temperature.

cond-mat.stat-mech↗

arXiv1999

Ionization degree of the electron-hole plasma in semiconductor quantum wells

The degree of ionization of a nondegenerate two-dimensional electron-hole plasma is calculated using the modified law of mass action, which takes into account all bound and unbound states in a screened Coulomb potential. Application of the variable phase method to this potential allows us to treat scattering and bound states on the same footing. Inclusion of the scattering states leads to a strong deviation from the standard law of mass action. A qualitative difference between mid- and wide-gap semiconductors is demonstrated. For wide-gap semiconductors at room temperature, when the bare exciton binding energy is of the order of T, the equilibrium consists of an almost equal mixture of correlated electron-hole pairs and uncorrelated free carriers.

cond-mat.stat-mech↗

arXiv1998

Levinson's theorem and scattering phase shift contributions to the partition function of interacting gases in two dimensions

We consider scattering state contributions to the partition function of a two-dimensional (2D) plasma in addition to the bound-state sum. A partition function continuity requirement is used to provide a statistical mechanical heuristic proof of Levinson's theorem in two dimensions. We show that a proper account of scattering eliminates singularities in thermodynamic properties of the nonideal 2D gas caused by the emergence of additional bound states as the strength of an attractive potential is increased. The bound-state contribution to the partition function of the 2D gas, with a weak short-range attraction between its particles, is found to vanish logarithmically as the binding energy decreases. A consistent treatment of bound and scattering states in a screened Coulomb potential allowed us to calculate the quantum-mechanical second virial coefficient of the dilute 2D electron-hole plasma and to establish the difference between the nearly ideal electron-hole gas in GaAs and the strongly correlated exciton/free-carrier plasma in wide-gap semiconductors such as ZnSe or GaN.

cond-mat.stat-mech↗

arXiv1997

Variable-phase method and Levinson's theorem in two dimensions: Application to a screened Coulomb potential

The variable-phase approach is applied to scattering and bound states in an attractive Coulomb potential, statically screened by a two-dimensional (2D) electron gas. A 2D formulation of Levinson's theorem is used for bound-state counting and a hitherto undiscovered, simple relationship between the screening length and the number of bound states is found. As the screening length is increased, sets of bound states with differing quantum numbers appear degenerately.

cond-mat↗