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Exciton/free-carrier plasma in GaN-based quantum wells: Scattering and screening

M. E. Portnoi·I. Galbraith
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Abstract

The degree of ionisation of a two-dimensional electron-hole plasma is calculated in the low-density (Boltzmann) limit. The electron-hole interaction is considered for all states: optically active and inactive, bound and unbound. The theory is applied to exciton/free-carrier plasma in GaN-based quantum wells at room temperature.

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M. E. Portnoi, I. Galbraith. 2001-11-20. Exciton/free-carrier plasma in GaN-based quantum wells: Scattering and screening. https://doi.org/10.1002/1521-396x(200101)183%3A1%3C87%3A%3Aaid-pssa87%3E3.0.co%3B2-o

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