arXiv subjects

I. Gomez

Publications and source records attributed to I. Gomez.

5 recordsLinked to original sources

arXiv2002

Transport through a quantum wire with a side quantum-dot array

A noninteracting quantum-dot array side-coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have found an odd-even parity in the system, whose conductance vanishes for an odd number of quantum dots while becomes $2e^2/h$ for an even number. We established an explicit relation between this odd-even parity, and the positions of the resonances and antiresonances of the conductivity with the spectrum of the isolated QD array

cond-mat.mes-hall↗

arXiv2002

Transport in random quantum dot superlattices

We present a novel model to calculate single-electron states in random quantum dot superlattices made of wide-gap semiconductors. The source of disorder comes from the random arrangement of the quantum dots (configurational disorder) as well as spatial inhomogeneities of their shape (morphological disorder). Both types of disorder break translational symmetry and prevent the formation of minibands, as occurs in regimented arrays of quantum dots. The model correctly describes channel mixing and broadening of allowed energy bands due to elastic scattering by disorder.

cond-mat.mes-hall↗

arXiv2001

Electron scattering on disordered double barrier GaAs-Al$_x$Ga$_{1-x}$As heterostructures

We present a novel model to calculate vertical transport properties such as conductance and current in unintentionally disordered double barrier GaAs-Al$_x$Ga$_{1-x}$As heterostructures. The source of disorder comes from interface roughness at the heterojunctions (lateral disorder) as well as spatial inhomogeneities of the Al mole fraction in the barriers (compositional disorder). Both lateral and compositional disorder break translational symmetry along the lateral direction and therefore electrons can be scattered off the growth direction. The model correctly describe channel mixing due to these elastic scattering events. In particular, for realistic degree of disorder, we have found that the effects of compositional disorder on transport properties are negligible as compared to the effects due to lateral disorder.

cond-mat.dis-nn↗

arXiv2000

Electron states in a one-dimensional random binary alloy

We present a model for alloys of compound semiconductors by introducing a one-dimensional binary random system where impurities are placed in one sublattice while host atoms lie on the other sublattice. The source of disorder is the stochastic fluctuation of the impurity energy from site to site. Although the system is one-dimensional and random, we demonstrate analytical and numerically the existence of extended states in the neighborhood of a given resonant energy, which match that of the host atoms.

cond-mat.dis-nn↗

arXiv1999

Delocalization of states in two component superlattices with correlated disorder

Electron and phonon states in two different models of intentionally disordered superlattices are studied analytically as well as numerically. The localization length is calculated exactly and we found that it diverges for particular energies or frequencies, suggesting the existence of delocalized states for both electrons and phonons. Numerical calculations for the transmission coefficient support the existence of these delocalized states.

cond-mat↗