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Transport in random quantum dot superlattices

I. Gomez·F. Dominguez-Adame·E. Diez·P. Orellana
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Abstract

We present a novel model to calculate single-electron states in random quantum dot superlattices made of wide-gap semiconductors. The source of disorder comes from the random arrangement of the quantum dots (configurational disorder) as well as spatial inhomogeneities of their shape (morphological disorder). Both types of disorder break translational symmetry and prevent the formation of minibands, as occurs in regimented arrays of quantum dots. The model correctly describes channel mixing and broadening of allowed energy bands due to elastic scattering by disorder.

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I. Gomez, F. Dominguez-Adame, E. Diez, P. Orellana. 2002-03-12. Transport in random quantum dot superlattices. https://doi.org/10.1063/1.1503393

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