arXiv subjects

I. J. Maasilta

Publications and source records attributed to I. J. Maasilta.

31 records · Page 2Linked to original sources

arXiv2007

Maximizing phonon thermal conductance for ballistic membranes

At low temperatures, phonon scattering can become so weak that phonon transport becomes ballistic. We calculate the ballistic phonon conductance G for membranes using elasticity theory, considering the transition from three to two dimensions. We discuss the temperature and thickness dependence and especially concentrate on the issue of material parameters. For all membrane thicknesses, the best conductors have, counter-intuitively, the lowest speed of sound.

cond-mat.mes-hall↗

arXiv2007

Influence of Phonon dimensionality on Electron Energy Relaxation

We studied experimentally the role of phonon dimensionality on electron-phonon (e-p) interaction in thin copper wires evaporated either on suspended silicon nitride membranes or on bulk substrates, at sub-Kelvin temperatures. The power emitted from electrons to phonons was measured using sensitive normal metal-insulator-superconductor (NIS) tunnel junction thermometers. Membrane thicknesses ranging from 30 nm to 750 nm were used to clearly see the onset of the effects of two-dimensional (2D) phonon system. We observed for the first time that a 2D phonon spectrum clearly changes the temperature dependence and strength of the e-p scattering rate, with the interaction becoming stronger at the lowest temperatures below $\sim$ 0.5 K for the 30 nm membranes.

cond-mat.mes-hall↗

arXiv2007

Reentrant stability of superconducting films

We propose a mechanism responsible for the abrupt vanishing of the dendritic flux instability found in many superconducting films when an increasing magnetic field is applied. The onset of flux avalanches and the subsequent reentrance of stability in NbN films was investigated using magneto-optical imaging, and the threshold fields were measured as functions of critical current density, $j_c$. The results are explained with excellent quantitative agreement by a thermomagnetic model published recently, Phys. Rev. B73, 014512 (2006), showing that the reentrant stability is a direct consequence of a monotonously decreasing $j_c$ versus field.

cond-mat.supr-con↗

arXiv2007

Optimal operation of transition-edge sensors on ballistic membranes

We calculate the operating parameters of a transition edge sensor that is mounted on a thin dielectric membrane with the assumption that the phononic heat transport in the membrane is ballistic. Our treatment uses the correct phonon modes from elasticity theory (Lamb-modes), and spans the transition from 3D to 2D behavior. The phonon cooling power and conductance have a global minimum as function of membrane thickness, which leads to an optimal value for the membrane thickness with respect to noise equivalent power at a fixed operating temperature. The energy resolution of a calorimeter will not be affected strongly, but, somewhat counterintuitively, the effective time constant can be reduced by decreasing the membrane thickness in the 2D limit.

cond-mat.mes-hall↗

arXiv2006

Influence of temperature gradients on tunnel junction thermometry below 1 K: cooling and electron-phonon coupling

We have studied thermal gradients in thin Cu and AlMn wires, both experimentally and theoretically. In the experiments, the wires were Joule heated non-uniformly at sub-Kelvin temperatures, and the resulting temperature gradients were measured using normal metal-insulator-superconducting tunnel junctions. The data clearly shows that even in reasonably well conducting thin wires with a short ($\sim 10 μ$m) non-heated portion, significant temperature differences can form. In most cases, the measurements agree well with a model which includes electron-phonon interaction and electronic thermal conductivity by the Wiedemann-Franz law.

cond-mat.mes-hall↗

arXiv2006

Complete stabilization and improvement of the characteristics of tunnel junctions by thermal annealing

We have observed that submicron sized Al--AlO{$_x$}--Al tunnel junctions can be stabilized completely by annealing them in vacuum at temperatures between $350^{\circ}$C and $450^{\circ}$C. In addition, low temperature characterization of the samples after the annealing treatment showed a marked improvement of the tunneling characteristics due to disappearance of unwanted resonances in the current. Charging energy, tunneling resistance, barrier thickness and height all increase after the treatment. The superconducting gap is not affected, but supercurrent is reduced in accordance with the increase of tunneling resistance.

cond-mat.mes-hall↗

arXiv2006

Electron energy relaxation by phonons in the Kondo condensate

We have used normal metal-insulator-superconductor tunnel junctions as thermometers at sub-Kelvin temperatures to study the electron-phonon (e-p) interaction in thin Aluminum films doped with Manganese, as a function of Manganese concentration. Mn in Al is known to be a Kondo impurity with extremely high Kondo temperature $T_K \sim$ 500 K, thus our results probe the e-p coupling in the fully spin compensated, unitary limit. The temperature dependence of the e-p interaction is consistent with the existing theory for disordered metals, however full theory including the Kondo effect has not been worked out yet. The strength of the interaction decreases with increasing Manganese concentration, providing a means to improve sensitivity of detectors and efficiency of solid state coolers.

cond-mat.mes-hall↗

arXiv2005

Observation of disorder-induced weakening of electron-phonon interaction in thin noble metal films

We have used symmetric normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry in the temperature range 50 - 700 mK. By Joule heating the electron gas and measuring the electron temperature, we show that the electron-phonon (e-p) scattering rate in the simplest noble metal disordered thin films (Cu,Au) follows a $T^4$ temperature dependence, leading to a stronger decoupling of the electron gas from the lattice at the lowest temperatures. This power law is indicative e-p coupling mediated by vibrating disorder, in contrast to the previously observed $T^3$ and $T^2$ laws.

cond-mat.mes-hall↗

arXiv2004

Direct measurement of the electron-phonon relaxation rate in thin copper films

We have used normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry at sub-Kelvin temperatures. With the help of these thermometers, we have developed an ac-technique to measure the electron-phonon (e-p) scattering rate directly, without any other material or geometry dependent parameters, based on overheating the electron gas. The technique is based on Joule heating the electrons in the frequency range DC-10 MHz, and measuring the electron temperature in DC. Because of the nonlinearity of the electron-phonon coupling with respect to temperature, even the DC response will be affected, when the heating frequency reaches the natural cut-off determined by the e-p scattering rate. Results on thin Cu films show a $T^{4}$ behavior for the scattering rate, in agreement with indirect measurement of similar samples and numerical modeling of the non-linear response.

cond-mat.mes-hall↗

arXiv2004

Electron-phonon interaction in thin copper and gold films

We have studied the electron-phonon (e-p) interaction in thin Cu and Au films at sub-Kelvin temperatures with the help of the hot electron effect, using symmetric normal metal-insulator-superconductor tunnel junction pairs as thermometers. By Joule heating the electron gas and measuring the electron and the lattice temperatures simultaneously, we show that the electron-phonon scattering rate follows a $T^{4}$ temperature dependence in both metals. The result is in accordance with the theory of e-p scattering in disordered films with vibrating boudaries and impurities, in contrast to the $T^{3}$-law expected for pure samples, and $T^{2}$-law for static disorder.

cond-mat.mes-hall↗

arXiv2003

Direct observation of micron-scale ordered structure in a two-dimensional electron system

We have applied a novel scanned probe method to directly resolve the interior structure of a GaAs/AlGaAs two-dimensional electron system in a tunneling geometry. We find that the application of a perpendicular magnetic field can induce surprising density modulations that are not static as a function of the field. Near six and four filled Landau levels, stripe-like structures emerge with a characteristic wave length ~2 microns. Present theories do not account for ordered density modulations on this length scale.

cond-mat.mes-hall↗

arXiv2002

Tunneling images of a 2D electron system in a quantizing magnetic field

We have applied a scanning probe method, Subsurface Charge Accumulation (SCA) imaging, to resolve the local structure of the interior of a semiconductor two-dimensional electron system (2DES) in a tunneling geometry. Near magnetic fields corresponding to integer Landau level filling, submicron scale spatial structure in the out-of-phase component of the tunneling signal becomes visible. In the images presented here, the structure repeats itself when the filling factor is changed from nu=6 to nu=7. Therefore, we believe the images reflect small modulations in the 2DES density caused by the disorder in the sample.

cond-mat.mes-hall↗

arXiv1997

Energetics of Quantum Antidot States in Quantum Hall Regime

We report experiments on the energy structure of antidot-bound states. By measuring resonant tunneling line widths as function of temperature, we determine the coupling to the remote global gate voltage and find that the effects of interelectron interaction dominate. Within a simple model, we also determine the energy spacing of the antidot bound states, self consistent edge electric field, and edge excitation drift velocity.

cond-mat.mes-hall↗