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I. Kopsalis

Publications and source records attributed to I. Kopsalis.

3 recordsLinked to original sources

Summary of quality control (QC) of ATLAS18 production ITk strip sensors

To address the demanding operational requirements of the High-Luminosity upgrade of the Large Hadron Collider (HL-LHC), the ATLAS experiment is replacing its current Inner Detector with a new all-silicon Inner Tracker (ITk). The ITk will feature an active area of 165 m2, with its outer tracking layers populated by approximately 18,000 ATLAS18 n+-in-p silicon strip sensors. The silicon sensors, available in eight geometries tailored to two barrel and six endcap types, respectively, are designed to tolerate fluences of up to 1.6 x 10^15 neq/cm2 and ionizing doses of 66 Mrad. A comprehensive, multi-year Quality Control (QC) program is underway across multiple international institutes to evaluate these ITk strip sensors for mechanical and electrical conformity. The QC process includes IV/CV characterization, full strip tests, long-term current stability monitoring, visual inspection, and metrology tests. To manage the high throughput of about 500 sensors per month, the collaboration has implemented standardized test procedures, software packages for data monitoring and integrity checks, unified data formats, and automated analysis tools. The standardization ensures consistent pass/fail evaluation and centralized data handling that enables effective identification of trends and anomalies at all sites during the production. This contribution presents an overview of the ITk strip sensor production and QC framework, along with key findings throughout the whole production, such as charge-up of sensors, stability of the leakage currents, nonrecoverable IV breakdown, and low inter-strip isolation within wafers. It provides insights into sensor yield, quality trends, and reviews specific case studies, such as p-stop doping non-uniformity. Over 91% of the production, totaling over 590 batches, were tested and accepted. Six batches were rejected. These account for 2.8% of the total tested sensors.

physics.ins-det

Determination of the p-spray profile for n+p silicon sensors using a MOSFET

The standard technique to electrically isolate the $n^+$ implants of segmented silicon sensors fabricated on high-ohmic $p$-type silicon are $p^+$-implants. Although the knowledge of the $p^+$-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a $p^+$-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with $\approx 3.5 \times 10^{12}$ cm$^{-2}$ of boron and $\langle 1 0 0 \, \rangle$ crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between $3.5 \times 10^{12}$ cm$^{-3}$ and $2 \times 10^{15}$ cm$^{-3}$ for the MOSFET with $p^+$-implant, is determined down to a distance of a fraction of a $μ$m from the Si-SiO$_2$ interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed.

physics.ins-det

The influence of edge effects on the determination of the doping profile of silicon pad diodes

Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different areas, the planar and the edge contributions to the diode capacitance are determined separately. It is shown that the doping concentration derived from the capacitance-voltage measurements with and without edge corrections differ significantly. After the edge correction, the bulk doping of the pad diodes is found to be uniform within +/- 1.5%. The voltage dependence of the edge capacitance is compared to the predictions of two simple models.

physics.ins-det