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I. S. Burmistrov

Publications and source records attributed to I. S. Burmistrov.

At least 91 records · Page 5Linked to original sources

Half-integer quantum Hall effect of disordered Dirac fermions at a topological insulator surface

The unconventional (half-integer) quantum Hall effect for a single species of Dirac fermions is analyzed. We discuss possible experimental measurements of the half-integer Hall conductance $g_{xy}$ of topological insulator surface states and explain how to reconcile Laughlin's flux insertion argument with half-integer $g_{xy}$. Using a vortex state representation of Landau Level wavefunctions, we calculate current density beyond linear response, which is in particular relevant to the topological image monopole effect. As a major result, the field theory describing the localization physics of the quantum Hall effect of a single species of Dirac fermions is derived. In this connection, the issue of (absent) parity anomaly is revisited. The renormalization group flow (RG) and the resulting phase diagram are extensively discussed. Starting values of the RG flow are given by the semiclassical conductivity tensor which is obtained from the Boltzmann transport theory of the anomalous Hall effect.

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Statistics of Spin Fluctuations in Quantum Dots with Ising Exchange

We explore the effect of single-particle level fluctuations on the Stoner instability in a QD with a strong spin-orbit coupling in the framework of the universal Hamiltonian with the Ising exchange interaction. We reduce the problem to studying the statistics of extrema of a certain Gaussian process and demonstrate that, in spite of the randomness of the single-particle levels, the longitudinal spin susceptibility and all its moments diverge simultaneously at the point of the Stoner instability which is determined by the standard criterion involving the mean level spacing only.

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Tunneling into the localized phase near Anderson transitions with Coulomb interaction

We study the tunneling density of states (TDOS) of a disordered electronic system with Coulomb interaction on the insulating side of the Anderson localization transition. The average TDOS shows a critical behavior at high energies, with a crossover to a soft Coulomb gap $Δ$ at low energies. We demonstrate that the single-particle excitations experience a localization transition (which belongs to the noninteracting universality class) at an energy $E=\pm E_c$. The mobility edge $E_c$ scales with the distance $μ_c-μ$ from the interacting critical point according to $E_c\propto (μ_c-μ)^{νz}$, where $ν$ and $z$ are the localization-length and the dynamical critical exponents. Local TDOS shows strong fluctuations and long-range correlations which reflect the multifractality associated with interacting and noninteracting fixed points as well the localization of low-energy excitations.

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Interaction and disorder effects in 3D topological insulator thin films

A theory of combined interference and interaction effects on the diffusive transport properties of 3D topological insulator surface states is developed. We focus on a slab geometry (characteristic for most experiments) and show that interactions between the top and bottom surfaces are important at not too high temperatures. We treat the general case of different surfaces (different carrier densities, uncorrelated disorder, arbitrary dielectric environment, etc.). In order to access the low-energy behavior of the system we renormalize the interacting diffusive sigma model in the one loop approximation. It is shown that intersurface interaction is relevant in the renormalization group (RG) sense and the case of decoupled surfaces is therefore unstable. An analysis of the emerging RG flow yields a rather rich behavior. We discuss realistic experimental scenarios and predict a characteristic non-monotonic temperature dependence of the conductivity. In the infrared (low-temperature) limit, the systems flows into a metallic fixed point. At this point, even initially different surfaces have the same transport properties. Investigating topological effects, we present a local expression of the $\mathbb Z_2$ theta term in the sigma model by first deriving the Wess-Zumino-Witten theory for class DIII by means of non-abelian bosonization and then breaking the symmetry down to AII. This allows us to study a response of the system to an external electromagnetic field. Further, we discuss the difference between the system of Dirac fermions on the top and bottom surfaces of a topological insulator slab and its non-topological counterpart in a double-well structure with strong spin-orbit interaction.

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Multifractality at Anderson transitions with Coulomb interaction

We explore mesoscopic fluctuations and correlations of the local density of states (LDOS) near localization transition in a disordered interacting electronic system. It is shown that the LDOS multifractality survives in the presence of Coulomb interaction. We calculate the spectrum of multifractal dimensions in $2+ε$ spatial dimensions and show that it differs from that in the absence of interaction. The multifractal character of fluctuations and correlations of the LDOS can be studied experimentally by scanning tunneling microscopy of two-dimensional and three-dimensional disordered structures.

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An Exact Solution for Spin and Charge Correlations in Quantum Dots: The Effect of Level Fluctuations and Zeeman Splitting

The inclusion of charging and spin-exchange interactions within the Universal Hamiltonian description of quantum dots is challenging as it leads to a non-Abelian action. Here we present an exact analytical solution of the probem, in particular, in the vicinity of the Stoner instabilty. We calculate the tunneling density of states and the spin susceptibility. We demonstrate that near the Stoner instability the spin susceptibility follows a Curie law with an effective spin. The latter depends logarithmically on temperature due to the statistical fluctuations of the single-particle levels. Near the Stoner instability the tunneling density of states exhibits a non-monotonous behavior as function of the tunneling energy, even at temperatures higher than the exchange energy. This is due to ehnanced spin correlations. Our results could be tested in quantum dots made of nearly ferromagnetic materials.

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Co-tunneling current through the two-level quantum dot coupled to magnetic leads: A role of exchange interaction

The co-tunneling current through a two-level doubly occupied quantum dot weakly coupled to ferromagnetic leads is calculated in the Coulomb blockade regime. It is shown that the dependence of the differrential conductance on applied voltage has a stair-case structure with different sets of "stairs" for parallel and anti-parallel configurations of magnetization of the leads. Contributions to the current from elastic and inelastic processes are considered distinctly. It is observed that the interference part of the co-tunneling current involves terms corresponding to inelastic processes. Dependence of the co-tunneling current on the phases of the tunneling amplitudes is studied.

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Enhancement of superconductivity by Anderson localization

Influence of disorder on the temperature of superconducting transition (T_c) is studied within the sigma-model renormalization group framework. Electron-electron interaction in particle-hole and Cooper channels is taken into account and assumed to be short-range. Two-dimensional systems in the weak localization and antilocalization regime, as well as systems near mobility edge are considered. It is shown that in all these regimes the Anderson localization leads to strong enhancement of T_c related to the multifractal character of wave functions.

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Disordered electron liquid in double quantum well heterostructures: Renormalization group analysis and dephasing rate

We report a detailed study of the influence of the electron-electron interaction on physical observables (conductance, etc.) of a disordered electron liquid in double quantum well heterostructure. We find that even in the case of common elastic scattering off electrons in both quantum wells, the asymmetry in the electron-electron interaction across and within quantum wells decouples them at low temperatures. Our results are in quantitative agreement with recent transport experiments on the gated double quantum well Al$_x$Ga$_{1-x}$As/GaAs/Al$_x$Ga$_{1-x}$As heterostructures.

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Wave function multifractality and dephasing at metal-insulator and quantum Hall transitions

We analyze the critical behavior of the dephasing rate induced by short-range electron-electron interaction near an Anderson transition of metal-insulator or quantum Hall type. The corresponding exponent characterizes the scaling of the transition width with temperature. Assuming no spin degeneracy, the critical behavior can be studied by performing the scaling analysis in the vicinity of the non-interacting fixed point, since the latter is stable with respect to the interaction. We combine an analytical treatment (that includes the identification of operators responsible for dephasing in the formalism of the non-linear sigma-model and the corresponding renormalization-group analysis in $2+ε$ dimensions) with numerical simulations on the Chalker-Coddington network model of the quantum Hall transition. Finally, we discuss the current understanding of the Coulomb interaction case and the available experimental data.

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Out-of-Equilibrium Admittance of Single Electron Box Under Strong Coulomb Blockade

We study admittance and energy dissipation in an out-of-equlibrium single electron box. The system consists of a small metallic island coupled to a massive reservoir via single tunneling junction. The potential of electrons in the island is controlled by an additional gate electrode. The energy dissipation is caused by an AC gate voltage. The case of a strong Coulomb blockade is considered. We focus on the regime when electron coherence can be neglected but quantum fluctuations of charge are strong due to Coulomb interaction. We obtain the admittance under the specified conditions. It turns out that the energy dissipation rate can be expressed via charge relaxation resistance and renormalized gate capacitance even out of equilibrium. We suggest the admittance as a tool for a measurement of the bosonic distribution corresponding collective excitations in the system.

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Spin and Charge Correlations in Quantum Dots: An Exact Solution

The inclusion of charging and spin-exchange interactions within the Universal Hamiltonian description of quantum dots is challenging as it leads to a non-Abelian action. Here we present an {\it exact} analytical solution of the probem, in particular, in the vicinity of the Stoner instabilty point. We calculate several observables, including the tunneling density of states (TDOS) and the spin susceptibility. Near the instability point the TDOS exhibits a non-monotonous behavior as function of the tunneling energy, even at temperatures higher than the exchange energy. Our approach is generalizable to a broad set of observables, including the a.c. susceptibility and the absorption spectrum for anisotropic spin interaction. Our results could be tested in nearly ferromagnetic materials.

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The problem of "macroscopic charge quantization" in single-electron devices

In a recent Letter by the authors [I.S. Burmistrov and A.M.M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single electron transistor or SET) display "macroscopic charge quantization" which is completely analogous to the quantum Hall effect observed on very different electron systems. In this investigation we present more detail on these new findings. Based on the Ambegaokar-Eckern-Schoen (AES) theory of the Coulomb blockade we introduce a general response theory that probes the sensitivity of SET to changes in the boundary conditions. This response theory defines a new set of physical observables and we establish the contact with the standard results obtained from ordinary linear response theory. The response parameters generally define the renormalization behavior of the SET in the entire regime from weak coupling with large values of the tunneling conductance all the way down to the strong coupling phase where the system displays the Coulomb blockade. We introduce a general criterion for charge quantization that is analogous to the Thouless criterion for Anderson localization. We present the results of detailed computations on the weak coupling side of the theory, i.e. both perturbative and non-perturbative (instantons). Based on an effective theory in terms of quantum spins we study the quantum critical behavior of the AES model on the strong coupling side. Consequently, a unifying scaling diagram of the SET is obtained. This diagram displays all the super universal topological features of the theta-angle concept that previously arose in the theory of the quantum Hall effect.

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Charge relaxation resistance in the Coulomb blockade problem

We study the dissipation in a system consisting of a small metallic island coupled to a gate electrode and to a massive reservoir via single tunneling junction. The dissipation of energy is caused by a slowly oscillating gate voltage. We compute it in the regimes of weak and strong Coulomb blockade. We focus on the regime of not very low temperatures when electron coherence can be neglected but quantum fluctuations of charge are strong due to Coulomb interaction. The answers assume a particularly transparent form while expressed in terms of specially chosen physical observables. We discovered that the dissipation rate is given by a universal expression in both limiting cases.

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Metal-Insulator Transition in 2D: Experimental Test of the Two-Parameter Scaling

We report a detailed scaling analysis of resistivity ρ(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and general scaling ideas. This enables us to determine the critical electron density, two critical indices, and temperature dependence for the separatrix in the self-consistent manner. In addition, we reconstruct the empirical scaling function describing a two-parameter surface which fits well the ρ(T,n) data.

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Spin-valley interplay in two-dimensional disordered electron liquid

We report the detailed study of the influence of the spin and valley splittings on such physical observables of the two-dimensional disordered electron liquid as resistivity, spin and valley susceptibilities. We explain qualitatively the nonmonotonic dependence of the resistivity with temperature in the presence of a parallel magnetic field. In the presence of either the spin splitting or the valley splitting we predict novel, with two maximum points, temperature dependence of the resistivity.

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Energy relaxation in the spin-polarized disordered electron liquid

The energy relaxation in the spin-polarized disordered electron systems is studied in the diffusive regime. We derived the quantum kinetic equation in which the kernel of electron-electron collision integral explicitly depends on the electron magnetization. As the consequence, the inelastic scattering rate is found to have non-monotonic dependence on the spin polarization of the electron system.

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